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    • 3. 发明申请
    • Tilted electrochemical plating cell with constant wafer immersion angle
    • 具有恒定晶片浸入角度的倾斜电化学电镀槽
    • US20040016648A1
    • 2004-01-29
    • US10266477
    • 2002-10-07
    • Applied Materials, Inc.
    • Dmitry LubomirskySaravjeet SinghYezdi N. DordiSheshraj Tulshibagwale
    • C25D017/00
    • C25D17/02C25D7/123C25D17/001C25D21/00
    • A method and apparatus for immersing a substrate for plating operations. The apparatus generally includes a plating cell configured contain a plating solution therein. The plating cell includes at least one fluid basin, a diffusion plate position in a lower portion of the at least one fluid basin, and an anode positioned below the diffusion plate, the anode and the diffusion plate being positioned in parallel orientation with each other and in a tilted orientation with respect to horizontal. The apparatus further includes a head assembly positioned proximate the plating cell, the head assembly including a base member, an actuator positioned at a distal end of the base member, and a substrate support assembly in mechanical communication with the actuator, the substrate support assembly being configured to support a substrate in the at least one fluid basin for processing in an orientation that is generally parallel to the diffusion plate.
    • 一种用于浸渍电镀操作的基板的方法和装置。 该装置通常包括在其中包含电镀液的电镀单元。 所述电镀单元包括至少一个流体池,位于所述至少一个流体槽的下部的扩散板位置和位于所述扩散板下方的阳极,所述阳极和所述扩散板彼此平行取向地定位, 相对于水平方向倾斜。 所述装置还包括位于所述电镀单元附近的头部组件,所述头部组件包括基座构件,位于所述基座构件的远端的致动器以及与所述致动器机械连通的衬底支撑组件,所述衬底支撑组件 被配置为支撑所述至少一个流体池中的基底,用于以大致平行于所述扩散板的取向进行处理。
    • 5. 发明申请
    • Insoluble anode loop in copper electrodeposition cell for interconnect formation
    • 用于互连形成的铜电沉积池中的不溶性阳极环
    • US20040026255A1
    • 2004-02-12
    • US10358781
    • 2003-02-04
    • Applied Materials, Inc
    • Nicolay Y. KovarskyDmitry LubomirskyAnzhong ChangYezdi N. DordiMichael X. Yang
    • C25D017/00C25D003/38
    • H01L21/2885C25D7/123C25D21/18C25D21/22
    • Embodiments of the invention generally provide a method and apparatus for plating a metal on a substrate. The electrochemical plating system generally includes a plating cell having an anolyte compartment and a catholyte compartment, the anolyte compartment having an insoluble anode and an anolyte therein. The catholyte compartment generally includes a substrate support member and a catholyte therein. In addition, the plating cell generally includes an ion-exchange membrane disposed between the anolyte compartment and the catholyte compartment and a pump in fluid communication with the anolyte compartment, the pump configured to provide an anolyte to the anolyte compartment having a linear velocity of between about 0.5 cm/sec to about 50 cm/sec. The method generally includes supplying an anolyte solution to an anolyte compartment disposed in a plating cell having an anolyte compartment and a catholyte compartment. The anolyte solution generally passes through the anolyte compartment at a linear velocity of between about 0.5 cm/sec to about 50 cm/sec. The method further includes plating a metal onto the substrate with a catholyte solution disposed in a catholyte compartment of the plating cell, the catholyte compartment and the anolyte compartment separated by an ion-exchange membrane, removing used anolyte solution from the plating cell and passing at least a portion of the used anolyte solution through a correction device including at least one of copper oxide, copper hydroxide and combinations thereof.
    • 本发明的实施例通常提供一种用于在基底上电镀金属的方法和装置。 电化学电镀系统通常包括具有阳极电解液室和阴极电解液隔室的电镀槽,阳极电解液室具有不溶性阳极和阳极电解液。 阴极电解液隔室通常在其中包括基板支撑构件和阴极电解液。 此外,电镀槽通常包括设置在阳极电解液室和阴极电解液室之间的离子交换膜和与阳极电解液室流体连通的泵,所述泵被配置为向阳极电解液室提供线性速度介于 约0.5cm / sec至约50cm / sec。 该方法通常包括将阳极电解液供应到设置在具有阳极电解液室和阴极电解液室的电镀槽中的阳极电解液室。 阳极电解液通常以约0.5cm / sec至约50cm / sec的线速度穿过阳极电解液室。 该方法还包括用设置在电镀池的阴极电解液室中的阴极电解液,阴离子电解质隔室和由离子交换膜隔开的阳极电解液室将金属电镀到基板上,从电镀槽中除去使用的阳极电解液并通过 通过包括氧化铜,氢氧化铜及其组合中的至少一种的校正装置的至少一部分所使用的阳极电解液。
    • 10. 发明申请
    • Electric contact element for electrochemical deposition system
    • 电接触元件用于电化学沉积系统
    • US20010000396A1
    • 2001-04-26
    • US09730968
    • 2000-12-05
    • Applied Materials Inc.
    • Yezdi N. DordiJoseph J. Stevens
    • C25D005/02C25D017/00
    • C25D17/001C25D7/123C25D17/12H01L21/2885H05K3/241
    • An apparatus and associated method for deposition of metal ions contained in an electrolyte solution to form a metal film primarily on a seed layer formed on at least a first side of a substrate. The substrate has a second side that is opposed the first side and an edge joining the first side and the second side. The apparatus comprises a substrate holder system and an electric contact element. The electric contact element physically contacts one of the second side or the edge of the substrate. In one aspect, the substrate is rotated about its vertical axis when the seed layer of substrate is immersed in the electrolyte solution during the metal film deposition. In another aspect, the substrate is not rotated about its vertical axis when the seed layer on the substrate is immersed in the electrolyte solution during the metal film deposition. In different embodiments, the electric contact element contacts the seed layer on the second side of the substrate, a diffusion barrier layer on the second side of the substrate, or the seed layer on the edge of the substrate.
    • 一种用于沉积包含在电解质溶液中的金属离子的装置和相关方法,以主要形成在形成在基底的至少第一侧上的种子层上形成金属膜。 衬底具有与第一侧相对的第二侧和连接第一侧和第二侧的边缘。 该装置包括基板保持器系统和电接触元件。 电接触元件物理地接触基板的第二面或边缘中的一个。 在一个方面,当在金属膜沉积期间将衬底的晶种层浸入电解质溶液中时,衬底围绕其垂直轴线旋转。 在另一方面,当在金属膜沉积期间当衬底上的晶种层浸入电解质溶液中时,衬底不绕其垂直轴旋转。 在不同的实施例中,电接触元件接触衬底的第二侧上的种子层,在衬底的第二侧上的扩散阻挡层或衬底的边缘上的种子层。