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1. 发明申请

US20030140857A1 Apparatus and method for low pressure CVD deposition of tungsten and tungsten nitride 审中-公开
标题翻译：用于钨和氮化钨的低压CVD沉积的装置和方法
公开(公告)号：US20030140857A1
公开(公告)日：2003-07-31
申请号：US10058670
申请日：2002-01-28
申请人： Applied Materials, Inc.
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Ling Chen , Anzhong Chang , Seshadri Ganguli
IPC分类号： C23C016/00
CPC分类号： C23C16/45563 , C23C16/16 , C23C16/448 , C23C16/45582
摘要： In accordance with an embodiment of the invention, a processing chamber is configured to carry out chemical vapor deposition (CVD). An ampoule vaporizer is fastened to the chamber, and is configured to convert a fluorine-free tungsten-containing solid compound to vapor delivered to the chamber for use in the CVD. In one embodiment, the solid compound is tungsten hexacarbonyl (W(CO)6). In another embodiment, a mass flow controller is fastened to the chamber, and is configured to receive the vapor from the ampoule vaporizer, regulate the flow of the vapor, and deliver the vapor to the chamber. In yet another embodiment, the chamber includes a funnel-shaped dispersion plate configured to receive a gas mixture and direct the gas mixture toward a surface of the wafer in a substantially uniform manner.
摘要翻译：根据本发明的实施例，处理室被配置为执行化学气相沉积（CVD）。安瓿蒸发器被固定到室，并且被配置为将无氟含钨固体化合物转化成输送到室中用于CVD中的蒸气。在一个实施方案中，固体化合物是六羰基钨（W（CO）6）。在另一个实施例中，质量流量控制器被紧固到腔室，并且被配置为从安瓿蒸发器接收蒸气，调节蒸汽的流动并将蒸气输送到腔室。在另一个实施例中，腔室包括漏斗形分散板，其配置成接收气体混合物并以基本均匀的方式将气体混合物引向晶片的表面。

2. 发明申请

US20040026255A1 Insoluble anode loop in copper electrodeposition cell for interconnect formation 审中-公开
标题翻译：用于互连形成的铜电沉积池中的不溶性阳极环
公开(公告)号：US20040026255A1
公开(公告)日：2004-02-12
申请号：US10358781
申请日：2003-02-04
申请人： Applied Materials, Inc
发明人： Nicolay Y. Kovarsky , Dmitry Lubomirsky , Anzhong Chang , Yezdi N. Dordi , Michael X. Yang
IPC分类号： C25D017/00 , C25D003/38
CPC分类号： H01L21/2885 , C25D7/123 , C25D21/18 , C25D21/22
摘要： Embodiments of the invention generally provide a method and apparatus for plating a metal on a substrate. The electrochemical plating system generally includes a plating cell having an anolyte compartment and a catholyte compartment, the anolyte compartment having an insoluble anode and an anolyte therein. The catholyte compartment generally includes a substrate support member and a catholyte therein. In addition, the plating cell generally includes an ion-exchange membrane disposed between the anolyte compartment and the catholyte compartment and a pump in fluid communication with the anolyte compartment, the pump configured to provide an anolyte to the anolyte compartment having a linear velocity of between about 0.5 cm/sec to about 50 cm/sec. The method generally includes supplying an anolyte solution to an anolyte compartment disposed in a plating cell having an anolyte compartment and a catholyte compartment. The anolyte solution generally passes through the anolyte compartment at a linear velocity of between about 0.5 cm/sec to about 50 cm/sec. The method further includes plating a metal onto the substrate with a catholyte solution disposed in a catholyte compartment of the plating cell, the catholyte compartment and the anolyte compartment separated by an ion-exchange membrane, removing used anolyte solution from the plating cell and passing at least a portion of the used anolyte solution through a correction device including at least one of copper oxide, copper hydroxide and combinations thereof.
摘要翻译：本发明的实施例通常提供一种用于在基底上电镀金属的方法和装置。电化学电镀系统通常包括具有阳极电解液室和阴极电解液隔室的电镀槽，阳极电解液室具有不溶性阳极和阳极电解液。阴极电解液隔室通常在其中包括基板支撑构件和阴极电解液。此外，电镀槽通常包括设置在阳极电解液室和阴极电解液室之间的离子交换膜和与阳极电解液室流体连通的泵，所述泵被配置为向阳极电解液室提供线性速度介于约0.5cm / sec至约50cm / sec。该方法通常包括将阳极电解液供应到设置在具有阳极电解液室和阴极电解液室的电镀槽中的阳极电解液室。阳极电解液通常以约0.5cm / sec至约50cm / sec的线速度穿过阳极电解液室。该方法还包括用设置在电镀池的阴极电解液室中的阴极电解液，阴离子电解质隔室和由离子交换膜隔开的阳极电解液室将金属电镀到基板上，从电镀槽中除去使用的阳极电解液并通过通过包括氧化铜，氢氧化铜及其组合中的至少一种的校正装置的至少一部分所使用的阳极电解液。

3. 发明申请

US20030017268A1 .METHOD OF CVD TITANIUM NITRIDE FILM DEPOSITION FOR INCREASED TITANIUM NITRIDE FILM UNIFORMITY 审中-公开
标题翻译： CVD氮化钛薄膜沉积法提高氮化钛膜的均匀性
公开(公告)号：US20030017268A1
公开(公告)日：2003-01-23
申请号：US09908999
申请日：2001-07-18
申请人： Applied Materials, Inc.
发明人： Jianhua Hu , Hanh D. Nguyen , Steve H. Chiao , Xiaoxiong Yuan , Anzhong Chang , Hongbee Teoh , Avgerinos Gelatos
IPC分类号： C23C016/00
CPC分类号： C23C16/45565 , C23C16/34 , C23C16/4412 , C23C16/45502 , C23C16/45574
摘要： In one aspect of the present invention there is provided a method of improving the uniformity of a titanium nitride film, comprising the steps of introducing TiCl4 gas to a chemical vapor deposition chamber from the center of a chamber lid wherein said chamber lid has a blocker plate; introducing NH3 gas to the chemical vapor deposition chamber simultaneously from both the center and edge of the chamber lid thereby distributing the TiCl4 gas and the NH3 gas uniformly across a surface of a wafer; and depositing a titanium nitride film by chemical vapor deposition onto the surface of the wafer where the uniform distribution of the TiCl4 gas and the NH3 gas yields a titanium nitride film with improved uniformity. The chamber is provided with two pumping channels positioned on either side of the chamber.
摘要翻译：在本发明的一个方面，提供了一种提高氮化钛膜的均匀性的方法，包括以下步骤：将TiCl 4气体从室盖的中心引入化学气相沉积室，其中所述室盖具有阻挡板 ; 从室盖的中心和边缘同时将NH 3气体引入化学气相沉积室，从而将TiCl 4气体和NH 3气体均匀地分布在晶片的表面上; 以及通过化学气相沉积将氮化钛膜沉积到晶片的表面上，其中TiCl 4气体和NH 3气体的均匀分布产生具有改进的均匀性的氮化钛膜。腔室设置有位于腔室两侧的两个泵送通道。

4. 发明申请

US20030019428A1 Chemical vapor deposition chamber 审中-公开
标题翻译：化学气相沉积室
公开(公告)号：US20030019428A1
公开(公告)日：2003-01-30
申请号：US10134206
申请日：2002-04-26
申请人： APPLIED MATERIALS, INC.
发明人： Vincent W. Ku , Anzhong Chang , Anh N. Nguyen , Ming Xi , Xiaoxiong Yuan , Juan B. Tuscano JR. , Lawrence C. Lei , Seshadri Ganguli , Michael Yang , Chen-An Chen , Ling Chen
IPC分类号： C23C016/00 , C23F001/00 , H01L021/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45512
摘要： A processing chamber is adapted to perform a deposition process on a substrate. The chamber includes a pedestal adapted to hold a substrate during deposition and a gas mixing and distribution assembly mounted above the pedestal. The gas mixing and distribution assembly includes a face plate, a dispersion plate mounted above the face plate, and a mixing fixture mounted above the dispersion plate. The face plate is adapted to present an emissivity invariant configuration to the pedestal. The mixing fixture includes a mixing chamber to which a process gas is flowed and an outer chamber surrounding the mixing chamber. The processing chamber further includes an enclosure and a liner installed inside the enclosure and surrounding the pedestal. The liner defines a gap between the liner and the enclosure. The gap has a minimum width adjacent an exhaust port and a maximum width at a point that is diametrically opposite the exhaust port.
摘要翻译：处理室适于在基板上执行沉积处理。腔室包括适于在沉积期间保持基底的基座和安装在基座上方的气体混合和分配组件。气体混合分配组件包括面板，安装在面板上方的分散板和安装在分散板上方的混合夹具。面板适于向基座呈现发射率不变构型。混合夹具包括处理气体流过的混合室和围绕混合室的外室。处理室还包括外壳和安装在外壳内并围绕基座的衬垫。衬套限定了衬套和外壳之间的间隙。该间隙具有邻近排气口的最小宽度和在与排气口径向相反的点处的最大宽度。

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