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1. 发明申请

US20030000775A1 Lift pin actuating mechanism for semiconductor processing chamber 失效
标题翻译：用于半导体处理室的提升销致动机构
公开(公告)号：US20030000775A1
公开(公告)日：2003-01-02
申请号：US09895441
申请日：2001-06-29
申请人： Applied Materials, Inc.
发明人： Joseph Yudovsky , Salvador P. Umotoy
IPC分类号： B65G001/00
CPC分类号： H01L21/67748 , H01L21/68742 , Y10S414/135
摘要： A set of lift pins defines a storage location for a substrate in a substrate processing chamber. Each lift pin has an actuating mechanism including a translating mechanism that translates vertical actuation into horizontal motion. The actuating mechanism may include a base, a mechanism adapted to raise and lower the base, and a lever pivotally mounted on the base. The lift pin may be fixedly mounted on the lever. A stop may be adjacent the base and adapted to engage the lever to pivot the lever as the base is lowered.
摘要翻译：一组提升销限定了衬底处理室中的衬底的存储位置。每个提升销具有致动机构，其包括将垂直致动转换成水平运动的平移机构。致动机构可以包括基座，适于升高和降低基座的机构，以及枢转地安装在基座上的杠杆。提升销可以固定地安装在杠杆上。止挡件可以邻近基座并且适于接合杠杆以在基座降低时枢转杠杆。

2. 发明申请

US20030172872A1 Apparatus for cyclical deposition of thin films 有权
标题翻译：用于薄膜循环沉积的装置
公开(公告)号：US20030172872A1
公开(公告)日：2003-09-18
申请号：US10352257
申请日：2003-01-27
申请人： APPLIED MATERIALS, INC.
发明人： Randhir P.S. Thakur , Alfred W. Mak , Ming Xi , Walter Benjamin Glenn , Ahmad A. Khan , Ayad A. Al-Shaikh , Avgerinos V. Gelatos , Salvador P. Umotoy
IPC分类号： C23C016/00
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/452 , C23C16/45536 , C23C16/45565 , C23C16/45582 , H01J37/32009 , H01J37/32091 , H01J37/3244 , H01J37/32834 , H01L21/6719
摘要： An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases into a reaction region of the chamber.
摘要翻译：一种用于在半导体衬底上循环沉积薄膜的装置，包括具有气体分配系统的处理室，该气体分配系统具有用于处理气体的独立路径，以及与将所述工艺气体计量到所述室的反应区域的阀的操作同步的排气系统。

3. 发明申请

US20010050053A1 Gate valve for an integrated temperature controlled exhaust and cold trap assembly 审中-公开
标题翻译：用于集成温度控制的排气和冷阱组件的闸阀
公开(公告)号：US20010050053A1
公开(公告)日：2001-12-13
申请号：US09740045
申请日：2000-12-19
申请人： Applied Materials, Inc.
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
IPC分类号： C23C016/00 , F16K001/00
CPC分类号： B01D8/00 , C23C16/4412 , Y10S55/15 , Y10S55/30
摘要： A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.
摘要翻译：具有冷阱能力的温度控制排气组件。排气组件的一个实施例包括允许独立的多区域闭环温度控制的多加热器设计。另一个实施例包括紧凑的多阀单体设计，其包括用于简化闭环温度控制的单个加热器。冷阱包含一个加热器，用于在陷阱入口进行温度控制，以尽量减少不必要的沉积物。一个实施例还包括多级冷阱和颗粒捕集器。作为可拆卸单元，该冷阱在吸附的可冷凝物的处理和处理中提供了额外的安全性。

4. 发明申请

US20030010451A1 Lid assembly for a processing system to facilitate sequential deposition techniques 有权
标题翻译：用于处理系统的盖组件以便顺序沉积技术
公开(公告)号：US20030010451A1
公开(公告)日：2003-01-16
申请号：US10016300
申请日：2001-12-12
申请人： Applied Materials, Inc.
发明人： Gwo-Chuan Tzu , Salvador P. Umotoy
IPC分类号： C23F001/00 , C23C016/00
CPC分类号： C23C16/45544 , C23C16/455 , C23C16/45512 , C23C16/45525 , C23C16/45538 , C23C16/45561 , C23C16/50 , H01L21/67017
摘要： A lid assembly for a semiconductor processing system is provided. The lid assembly generally includes a lid having a gas manifold mounted on a first side and a baffle plate mounted on a second side. The gas manifold is configured to deliver a plurality of gases to a plenum defined between the baffle plate and the lid. The gases are mixed within a recess formed in the baffle plate before exiting into the processing system through a singular passage.
摘要翻译：提供了一种用于半导体处理系统的盖组件。盖组件通常包括具有安装在第一侧上的气体歧管和安装在第二侧上的挡板的盖。气体歧管被配置为将多个气体输送到限定在挡板和盖之间的增压室。气体在形成在挡板中的凹槽内混合，然后通过单一通道离开加工系统。

5. 发明申请

US20010004879A1 Integrated temperature controlled exhaust and cold trap assembly 有权
公开(公告)号：US20010004879A1
公开(公告)日：2001-06-28
申请号：US09740120
申请日：2000-12-19
申请人： Applied Materials, Inc.
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Russell C. Ellwanger , Ronald L. Rose , Joel Huston , James Jin-Long Chen
IPC分类号： C23C016/00
CPC分类号： B01D8/00 , C23C16/4412 , Y10S55/15 , Y10S55/30
摘要： A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.

6. 发明申请

US20030140857A1 Apparatus and method for low pressure CVD deposition of tungsten and tungsten nitride 审中-公开
标题翻译：用于钨和氮化钨的低压CVD沉积的装置和方法
公开(公告)号：US20030140857A1
公开(公告)日：2003-07-31
申请号：US10058670
申请日：2002-01-28
申请人： Applied Materials, Inc.
发明人： Salvador P. Umotoy , Lawrence Chung-Lai Lei , Ling Chen , Anzhong Chang , Seshadri Ganguli
IPC分类号： C23C016/00
CPC分类号： C23C16/45563 , C23C16/16 , C23C16/448 , C23C16/45582
摘要： In accordance with an embodiment of the invention, a processing chamber is configured to carry out chemical vapor deposition (CVD). An ampoule vaporizer is fastened to the chamber, and is configured to convert a fluorine-free tungsten-containing solid compound to vapor delivered to the chamber for use in the CVD. In one embodiment, the solid compound is tungsten hexacarbonyl (W(CO)6). In another embodiment, a mass flow controller is fastened to the chamber, and is configured to receive the vapor from the ampoule vaporizer, regulate the flow of the vapor, and deliver the vapor to the chamber. In yet another embodiment, the chamber includes a funnel-shaped dispersion plate configured to receive a gas mixture and direct the gas mixture toward a surface of the wafer in a substantially uniform manner.
摘要翻译：根据本发明的实施例，处理室被配置为执行化学气相沉积（CVD）。安瓿蒸发器被固定到室，并且被配置为将无氟含钨固体化合物转化成输送到室中用于CVD中的蒸气。在一个实施方案中，固体化合物是六羰基钨（W（CO）6）。在另一个实施例中，质量流量控制器被紧固到腔室，并且被配置为从安瓿蒸发器接收蒸气，调节蒸汽的流动并将蒸气输送到腔室。在另一个实施例中，腔室包括漏斗形分散板，其配置成接收气体混合物并以基本均匀的方式将气体混合物引向晶片的表面。

7. 发明申请

US20030136520A1 Ceramic substrate support 有权
标题翻译：陶瓷基板支撑
公开(公告)号：US20030136520A1
公开(公告)日：2003-07-24
申请号：US10055634
申请日：2002-01-22
申请人： Applied Materials, Inc.
发明人： Joseph Yudovsky , Salvador P. Umotoy , Shamouil Shamouilian , Ron Rose , Rita Dukes , Xiaoxiong Yuan
IPC分类号： C23F001/02 , C23C016/00
CPC分类号： C23C16/45521 , C23C16/4581 , C23C16/4586 , H01J2237/2001 , H01L21/67092
摘要： A substrate support assembly for supporting a substrate during processing is provided. In one embodiment, a support assembly includes a ceramic body having an embedded heating element and a base plate. The base plate and the ceramic body define a channel therebetween adapted to supply purge gas to a perimeter of a substrate disposed on the support assembly. The base plate is fastened to the body by brazing, adhering, fastening, press fitting or by mating engaging portions of a retention device such as a bayonet fitting.
摘要翻译：提供了一种用于在处理期间支撑基板的基板支撑组件。在一个实施例中，支撑组件包括具有嵌入式加热元件和基板的陶瓷体。基板和陶瓷体在它们之间限定了一个通道，用于将净化气体供应到设置在支撑组件上的基板的周边。基板通过钎焊，粘合，紧固，压配合或通过配合诸如卡口配件的保持装置的接合部分而紧固到主体。

8. 发明申请

US20030124842A1 Dual-gas delivery system for chemical vapor deposition processes 审中-公开
标题翻译：用于化学气相沉积工艺的双气体输送系统
公开(公告)号：US20030124842A1
公开(公告)日：2003-07-03
申请号：US10033544
申请日：2001-12-27
申请人： APPLIED MATERIALS, INC.
发明人： Mark M. Hytros , Truc T. Tran , Salvador P. Umotoy , Lawrence Chung-Lai Lei , Avgerinos Gelatos , Tong Zhang
IPC分类号： C23F001/00 , C23C016/00 , H01L021/306 , H01L021/44
CPC分类号： C23C16/45574 , C23C16/34 , C23C16/45514 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/5096 , C23C16/56 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76856
摘要： Embodiments of the present invention generally relate to an apparatus and method for delivering two separate gas flows to a processing region. One embodiment of a substrate processing chamber adapted to deliver two separate gas flows to a processing region comprises a substrate support having a substrate receiving surface and a showerhead disposed over the substrate receiving surface. The showerhead includes a first passageway having a plurality of first passageway holes and a second passageway having a plurality of second passageway holes. The first passageway is adapted to deliver a first gas flow through the first passageway holes to the substrate receiving surface. The second passageway is adapted to deliver a second gas flow through the second passageway holes to the substrate receiving surface. The substrate processing chamber further includes a plasma power source. The plasma power source may be in electrical communication with the showerhead or with the substrate support to generate a plasma from gases between the showerhead and the substrate support. One embodiment of a method of delivering two separate gas flows to a processing region comprises performing one or more of processes from the group including forming a titanium layer by plasma enhanced chemical vapor deposition, forming a passivation layer by a nitrogen plasma treatment of a titanium layer, forming a composite titanium/titanium nitride layer by an alternating plasma enhanced chemical vapor deposition and a nitrogen plasma treatment, forming a titanium nitride layer by thermal chemical vapor deposition, and plasma treating a titanium nitride layer.
摘要翻译：本发明的实施例一般涉及用于将两个单独的气流输送到处理区域的装置和方法。适于将两个单独的气流输送到处理区域的衬底处理室的一个实施例包括具有衬底接收表面的衬底支撑件和设置在衬底接收表面上的喷头。喷头包括具有多个第一通道孔的第一通道和具有多个第二通道孔的第二通道。第一通道适于将第一气流通过第一通道孔传送到基板接收表面。第二通道适于将第二气流通过第二通道孔传送到基板接收表面。基板处理室还包括等离子体电源。等离子体动力源可以与喷头或衬底支撑件电连通以从喷头和衬底支撑件之间的气体产生等离子体。将两个单独的气流输送到处理区域的方法的一个实施例包括执行包括通过等离子体增强化学气相沉积形成钛层的一个或多个工艺，通过钛层的氮等离子体处理形成钝化层通过交替等离子体增强化学气相沉积和氮等离子体处理形成复合钛/氮化钛层，通过热化学气相沉积形成氮化钛层，以及等离子体处理氮化钛层。

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