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    • 1. 发明授权
    • Magnetron sputtering source enclosed by a mirror-finished metallic cover
    • 磁控溅射源由镜面金属盖包围
    • US06254747B1
    • 2001-07-03
    • US08988071
    • 1997-12-10
    • Akira HoshinoToyoshi UchiyamaKen-ichi TakagiTadashi Yamamoto
    • Akira HoshinoToyoshi UchiyamaKen-ichi TakagiTadashi Yamamoto
    • C23C1434
    • H01J37/321C23C14/358C23C14/564C23C14/568H01J37/3405
    • A sputtering apparatus has a permanent, magnet for forming, in front of a target, a magnetic field for magnetron discharging. The permanent magnet is disposed behind the target and an RF induction discharge coil is disposed in front of the target. The permanent magnet is contained inside an evacuated cathode case which is in the form of a container and which is provided therein with a circulation passage for cooling water. The cathode case and the RF induction discharge coil are enclosed therearound by a metallic cover which has an aperture for emitting sputtered particles. To make an element for a magnetoresistance head, a substrate is transferred from a load lock chamber to a pre-treatment chamber to clean it therein by an etching apparatus. The substrate is then transferred to an ultrahigh vacuum film deposition chamber which is provided therein with a plurality of inductively coupled RF plasma-assisted magnetron sputtering apparatuses which are evacuated to an ultrahigh vacuum. Extremely thin multiple layers of flat non-magnetic layers and magnetic layers are alternately deposited therein on the substrate. The deposition is controlled by opening and closing a shutter which is disposed in a position to prevent splashing of the sputtered particles to the substrate. The substrate is moved to a position of respective sputtering apparatuses inside the film deposition chamber to deposit different kinds of films.
    • 溅射装置具有用于在靶前方形成用于磁控管放电的磁场的永磁体。 永久磁铁设置在目标的后面,RF感应放电线圈设置在目标的前面。 永久磁铁包含在容器形式的抽真空阴极壳体内,其中设置有用于冷却水的循环通道。 阴极壳体和RF感应放电线圈由具有用于发射溅射颗粒的孔的金属盖封装在其周围。 为了制造用于磁阻头的元件,将衬底从负载锁定室转移到预处理室,以通过蚀刻装置将其清洁。 然后将衬底转移到超高真空成膜室,其中设置有多个感应耦合的RF等离子体辅助磁控溅射装置,其被抽真空至超高真空。 非常薄的多层平面非磁性层和磁性层交替沉积在基底上。 通过打开和关闭闸板来控制沉积物,闸板设置在防止溅射的颗粒溅射到基板的位置。 将基板移动到成膜室内的各溅射装置的位置,以沉积不同种类的膜。
    • 5. 发明授权
    • Automatic transmission
    • 自动变速器
    • US06887178B2
    • 2005-05-03
    • US10283284
    • 2002-10-30
    • Terufumi MiyazakiYoshihiro IijimaAtsushi TabataYasuo HojoAkira Hoshino
    • Terufumi MiyazakiYoshihiro IijimaAtsushi TabataYasuo HojoAkira Hoshino
    • F16H3/62F16H3/66
    • F16H3/666F16H2200/0056F16H2200/006F16H2200/201F16H2200/2048F16H2200/2097
    • An automatic transmission includes a first rotating element provided by coupling a sun gear of a second planetary gear set and a carrier of a third planetary gear set to each other, a second rotating element provided by coupling a carrier of the second planetary gear set and a ring gear of the third planetary gear set to each other, a third rotating element provided by a ring gear of the second planetary gear set, and a fourth rotating element provided by a sun gear of the third planetary gear set. The first rotating element and the second rotating element are coupled to a case by first and second brakes, the fourth and first rotating elements are coupled to a ring gear of a first planetary gear set via first and second clutches, the second and first rotating elements are coupled to an input shaft via third and fourth clutches, and the third rotating element is integrally coupled to an output gear, so that the automatic transmission can provide eight forward gear stages by changing a combination of two of the clutches and brakes which are engaged to each other.
    • 一种自动变速器包括通过将第二行星齿轮组的太阳齿轮和第三行星齿轮组的托架彼此联接而提供的第一旋转元件,通过将第二行星齿轮组和第二行星齿轮组的支架联接而设置的第二旋转元件 第三行星齿轮的齿圈彼此组合,由第二行星齿轮组的齿圈提供的第三旋转元件和由第三行星齿轮组的太阳齿轮提供的第四旋转元件。 第一旋转元件和第二旋转元件通过第一和第二制动器联接到壳体,第四和第一旋转元件经由第一和第二离合器联接到第一行星齿轮组的齿圈,第二和第一旋转元件 通过第三和第四离合器联接到输入轴,并且第三旋转元件整体地联接到输出齿轮,使得自动变速器可以通过改变接合的两个离合器和制动器的组合来提供八个前进档位级 对彼此。
    • 6. 发明申请
    • Planetary gear type multistage transmission for vehicle
    • 行星齿轮式多级车辆传动
    • US20050020398A1
    • 2005-01-27
    • US10893922
    • 2004-07-20
    • Atsushi TabataAkira HoshinoTerufumi MiyazakiAtsushi HondaAkiharu AbeHirofumi Ota
    • Atsushi TabataAkira HoshinoTerufumi MiyazakiAtsushi HondaAkiharu AbeHirofumi Ota
    • F16H3/66F16H37/04F16H3/44
    • F16H3/666F16H3/663F16H37/04F16H2200/006F16H2200/0086F16H2200/2007F16H2200/201
    • The transmission 10 is constructed so that, in the first transmission portion 36, the rotation of the input shaft 16 is outputted to the second transmission portion 38 via the first intermediate output path M1 and the second intermediate output path M2 accelerated and rotated with respect to the first intermediate output path M1, and, in the second transmission portion 38, the first rotary element RE1 (S2 and S3) is selectively connected to the first driven gear CG1B via the first clutch C1 and is selectively connected to the second driven gear CG2B via the third clutch C3, the second rotary element RE2 (CA1 and CA2) are selectively connected to the first driven gear CG1B via the second clutch C2 and are selectively connected to the transmission case 12 operating as a non-rotating member via the first brake B1, the third rotary element RE3 (R1, R2 and CA3) is connected to the output gear 28 operating as an output rotating member, the fourth rotary element RE4 (S1) is selectively connected to the transmission case 12 via the second brake B2, and the fifth rotary element RE5 (R3) is selectively connected to the second driven gear CG2B via the fourth clutch C4. A forward multistage transmission can be obtained by engagement operations of the friction engagement devices.
    • 变速器10构造成使得在第一传动部分36中,输入轴16的旋转经由第一中间输出路径M1输出到第二传动部分38,并且第二中间输出路径M2相对于 第一中间输出路径M1和第二传动部38中的第一旋转元件RE1(S2和S3)经由第一离合器C1选择性地连接到第一从动齿轮CG1B,并且选择性地连接到第二从动齿轮CG2B 通过第三离合器C3,第二旋转元件RE2(CA1和CA2)经由第二离合器C2选择性地连接到第一从动齿轮CG1B,并且经由第一制动器选择性地连接到作为非旋转构件操作的变速箱12 如图B1所示,第三旋转元件RE3(R1,R2和CA3)连接到作为输出旋转构件工作的输出齿轮28,第四旋转元件RE4(S1)选择性地连接 经由第二制动器B2连接到变速器壳体12,并且第五旋转元件RE5(R3)经由第四离合器C4选择性地连接到第二从动齿轮CG2B。 可以通过摩擦接合装置的接合操作获得前进的多级变速器。
    • 9. 发明授权
    • Semiconductor device and production method thereof
    • 半导体装置及其制造方法
    • US06342447B1
    • 2002-01-29
    • US09577994
    • 2000-05-25
    • Akira Hoshino
    • Akira Hoshino
    • H01L2144
    • H01L21/76874H01L21/2885H01L21/76843H01L21/76877H01L23/53238H01L2924/0002H01L2924/00
    • An insulation layer 12 is formed on a semiconductor substrate 11 and has a groove 12a for formation of a wiring layer 15 in a predetermined region. A barrier metal is formed on an inner wall of the groove 12a and prevents diffusion of atoms constituting the wiring layer 15, into the insulation layer 12. A seed layer 14 is formed on the barrier metal 13 formed at the bottom of the groove 12a and serves as a kernel of crystal growth when forming the wiring layer 15. The seed layer has crystal orientation of (1 1 1) as a dominant. The wiring layer is formed to bury the groove 12a. Moreover, the wiring layer has crystal orientation of (1 1 1) as a dominant, which suppresses electromigration.
    • 绝缘层12形成在半导体基板11上,并具有用于在预定区域形成布线层15的槽12a。 在槽12a的内壁上形成阻挡金属,并防止构成布线层15的原子扩散到绝缘层12中。种子层14形成在形成于槽12a底部的阻挡金属13上, 在形成布线层15时用作晶体生长的核。种子层具有(111)的晶体取向为主要。 形成布线层以埋置槽12a。 此外,布线层具有(111)的晶体取向作为主导,抑制电迁移。