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1. 发明授权

US06254747B1 Magnetron sputtering source enclosed by a mirror-finished metallic cover 失效
标题翻译：磁控溅射源由镜面金属盖包围
公开(公告)号：US06254747B1
公开(公告)日：2001-07-03
申请号：US08988071
申请日：1997-12-10
申请人： Akira Hoshino , Toyoshi Uchiyama , Ken-ichi Takagi , Tadashi Yamamoto
发明人： Akira Hoshino , Toyoshi Uchiyama , Ken-ichi Takagi , Tadashi Yamamoto
IPC分类号： C23C1434
CPC分类号： H01J37/321 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/3405
摘要： A sputtering apparatus has a permanent, magnet for forming, in front of a target, a magnetic field for magnetron discharging. The permanent magnet is disposed behind the target and an RF induction discharge coil is disposed in front of the target. The permanent magnet is contained inside an evacuated cathode case which is in the form of a container and which is provided therein with a circulation passage for cooling water. The cathode case and the RF induction discharge coil are enclosed therearound by a metallic cover which has an aperture for emitting sputtered particles. To make an element for a magnetoresistance head, a substrate is transferred from a load lock chamber to a pre-treatment chamber to clean it therein by an etching apparatus. The substrate is then transferred to an ultrahigh vacuum film deposition chamber which is provided therein with a plurality of inductively coupled RF plasma-assisted magnetron sputtering apparatuses which are evacuated to an ultrahigh vacuum. Extremely thin multiple layers of flat non-magnetic layers and magnetic layers are alternately deposited therein on the substrate. The deposition is controlled by opening and closing a shutter which is disposed in a position to prevent splashing of the sputtered particles to the substrate. The substrate is moved to a position of respective sputtering apparatuses inside the film deposition chamber to deposit different kinds of films.
摘要翻译：溅射装置具有用于在靶前方形成用于磁控管放电的磁场的永磁体。永久磁铁设置在目标的后面，RF感应放电线圈设置在目标的前面。永久磁铁包含在容器形式的抽真空阴极壳体内，其中设置有用于冷却水的循环通道。阴极壳体和RF感应放电线圈由具有用于发射溅射颗粒的孔的金属盖封装在其周围。为了制造用于磁阻头的元件，将衬底从负载锁定室转移到预处理室，以通过蚀刻装置将其清洁。然后将衬底转移到超高真空成膜室，其中设置有多个感应耦合的RF等离子体辅助磁控溅射装置，其被抽真空至超高真空。非常薄的多层平面非磁性层和磁性层交替沉积在基底上。通过打开和关闭闸板来控制沉积物，闸板设置在防止溅射的颗粒溅射到基板的位置。将基板移动到成膜室内的各溅射装置的位置，以沉积不同种类的膜。

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