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1. 发明授权

US5324684A Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure 失效
标题翻译：在减压下在冷壁辐射加热的反应器中气相掺杂半导体材料
公开(公告)号：US5324684A
公开(公告)日：1994-06-28
申请号：US843361
申请日：1992-02-25
申请人： Ahmad Kermani , Kristian E. Johnsgard , Carl Galewski
发明人： Ahmad Kermani , Kristian E. Johnsgard , Carl Galewski
IPC分类号： H01L21/00 , H01L21/22 , H01L21/225 , H01L21/3215 , H01L21/20
CPC分类号： H01L21/67167 , H01L21/2254 , H01L21/32155 , H01L21/67207 , Y10S148/03 , Y10S148/035 , Y10S438/923
摘要： A technique for doping silicon material or other semiconductors uses gas phase dopant sources under reduced pressure in a radiantly heated, cold-wall reactor. The technique is applied to the automated integrated circuit manufacturing techniques being adopted in modern fabrication facilities. The method includes placing a substrate comprising semiconductor material on a thermally isolated support structure in a reduced pressure, cold-wall reaction chamber; radiantly heating the substrate within the reaction chamber to a controlled temperature; flowing a gas phase source of dopant at controlled pressure and concentration in contact with the substrate so that the dopant is absorbed by the substrate, and annealing the substrate. The substrate may be first coated with a layer of polycrystalline semiconductor, and then gas phase doping as described above may be applied to the polycrystalline layer.
摘要翻译：用于掺杂硅材料或其他半导体的技术在辐射加热的冷壁反应器中在减压下使用气相掺杂剂源。该技术应用于现代制造设备中采用的自动化集成电路制造技术。该方法包括将包含半导体材料的衬底放置在减压的冷壁反应室中的热隔离支撑结构上; 将反应室内的衬底辐射加热至受控温度; 在控制的压力和浓度下与衬底接触地流动掺杂剂的气相源，使得掺杂剂被衬底吸收，并使衬底退火。可以首先用多晶半导体层涂覆衬底，然后可以将如上所述的气相掺杂施加到多晶层。

2. 发明授权

US06403925B1 System and method for thermal processing of a semiconductor substrate 失效
标题翻译：半导体衬底的热处理系统和方法
公开(公告)号：US06403925B1
公开(公告)日：2002-06-11
申请号：US09695899
申请日：2000-10-25
申请人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
发明人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
IPC分类号： C23C1600
CPC分类号： C23C16/4411 , C23C16/46 , C23C16/466 , C30B25/10 , C30B31/12
摘要： A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. A vacuum region is preferably provided between the heated block and the insulating material as well as between the insulating material and the chamber wall. Heat transfer across the vacuum regions is primarily achieved by radiation, while heat transfer through the insulating material is achieved by conduction. The wafer is placed on or near the heated block within the vacuum cavity for heating by conduction and radiation. The rate of heating may be controlled by varying pressure across a range of very low pressures.
摘要翻译：相对于传统的灯加热系统，使用具有大热质量的稳定的热源的半导体衬底处理系统和方法。选择系统尺寸和处理参数以向晶片提供实质的热通量，同时最小化对周围环境（特别是从热源和晶片的边缘）的热损失。热源提供晶片温度均匀性分布，在低压下在温度范围内具有低的方差。电阻加热块基本封闭在用于加热晶片的绝缘真空腔内。优选地，在加热块和绝缘材料之间以及绝缘材料和室壁之间设置真空区域。通过真空区域的热传递主要通过辐射来实现，而通过绝缘材料的传热通过传导实现。将晶片放置在真空腔内的加热块上或附近，以通过传导和辐射进行加热。加热速率可以通过在非常低的压力范围内变化的压力来控制。

3. 发明授权

US06200634B1 Thermal processing system with supplemental resistive heater and shielded optical pyrometry 有权
标题翻译：具有补充电阻加热器和屏蔽光学高温计的热处理系统
公开(公告)号：US06200634B1
公开(公告)日：2001-03-13
申请号：US09133844
申请日：1998-08-14
申请人： Kristian E. Johnsgard , James McDiarmid
发明人： Kristian E. Johnsgard , James McDiarmid
IPC分类号： C23C1600
CPC分类号： H01L21/67248 , C23C16/481 , G01J5/0003 , H01L21/67115
摘要： System and method for determining thermal characteristics, such as temperature, temperature uniformity and emissivity, during thermal processing using shielded pyrometry. The surface of a semiconductor substrate is shielded to prevent interference from extrinsic light from radiant heating sources and to form an effective black-body cavity. An optical sensor is positioned to sense emitted light in the cavity for pyrometry. The effective emissivity of the cavity approaches unity independent of the semiconductor substrate material which simplifies temperature calculation. The shield may be used to prevent undesired backside deposition. Multiple sensors may be used to detect temperature differences across the substrate and in response heaters may be adjusted to enhance temperature uniformity.
摘要翻译：在使用屏蔽高温测量的热处理期间确定热特性的温度，温度均匀性和发射率的系统和方法。屏蔽半导体衬底的表面以防止来自辐射加热源的外在光的干扰并形成有效的黑体腔。定位光学传感器以感测空腔中的发射光用于高温测量。空腔的有效发射率与简化温度计算的半导体衬底材料无关，达到单位。屏蔽可用于防止不希望的背面沉积。可以使用多个传感器来检测穿过基底的温差，并且可以调节加热器以提高温度均匀性。

4. 发明授权

US5830277A Thermal processing system with supplemental resistive heater and shielded optical pyrometry 失效
标题翻译：具有补充电阻加热器和屏蔽光学高温计的热处理系统
公开(公告)号：US5830277A
公开(公告)日：1998-11-03
申请号：US451789
申请日：1995-05-26
申请人： Kristian E. Johnsgard , James McDiarmid
发明人： Kristian E. Johnsgard , James McDiarmid
IPC分类号： C23C16/48 , G01J5/00 , H01L21/00 , C23C16/00 , F27B5/14 , F27D11/00
CPC分类号： H01L21/67248 , C23C16/481 , G01J5/0003 , H01L21/67115
摘要： System and method for determining thermal characteristics, such as temperature, temperature uniformity and emissivity, during thermal processing using shielded pyrometry. The surface of a semiconductor substrate is shielded to prevent interference from extrinsic light from radiant heating sources and to form an effective black-body cavity. An optical sensor is positioned to sense emitted light in the cavity for pyrometry. The effective emissivity of the cavity approaches unity independent of the semiconductor substrate material which simplifies temperature calculation. The shield may be used to prevent undesired backside deposition. Multiple sensors may be used to detect temperature differences across the substrate and in response heaters may be adjusted to enhance temperature uniformity.
摘要翻译：在使用屏蔽高温测量的热处理期间确定热特性的温度，温度均匀性和发射率的系统和方法。屏蔽半导体衬底的表面以防止来自辐射加热源的外在光的干扰并形成有效的黑体腔。定位光学传感器以感测空腔中的发射光用于高温测量。空腔的有效发射率与简化温度计算的半导体衬底材料无关，达到单位。屏蔽可用于防止不希望的背面沉积。可以使用多个传感器来检测穿过基底的温差，并且可以调节加热器以提高温度均匀性。

5. 发明授权

US06342691B1 Apparatus and method for thermal processing of semiconductor substrates 失效
标题翻译：半导体衬底的热处理装置和方法
公开(公告)号：US06342691B1
公开(公告)日：2002-01-29
申请号：US09439833
申请日：1999-11-12
申请人： Kristian E. Johnsgard , Jean-François Daviet , James A. Givens , Stephen E. Savas , Brad S. Mattson , Ashur J. Atanos
发明人： Kristian E. Johnsgard , Jean-François Daviet , James A. Givens , Stephen E. Savas , Brad S. Mattson , Ashur J. Atanos
IPC分类号： F27B514
CPC分类号： H01L21/67115 , C30B31/12
摘要： A semiconductor substrate processing system and method of using a stable heating source with a large thermal mass relative to conventional lamp heating systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the substrate while reducing the potential of heat loss to the surrounding environment, particularly from the edges of the heat source and substrate. Aspects of the present invention include a dual resistive heater system comprising a base or primary heater, surrounded by a peripheral or edge heater. The impedance of the edge heater may be substantially matched to that of the primary heater such that a single power supply may be used to supply power to both heaters. Both resistive heaters deliver heat to a heated block, and the heaters and heated block are substantially enclosed within an insulated cavity. The walls of the insulated cavity may include multiple layers of insulation, and these layers may be substantially concentrically arranged. The innermost layers may comprise silicon carbide coated graphite; the outer layers may comprise opaque quartz. An embodiment of the invention includes a vacuum spool having a large conduction pathway for exhausting gases from the region of the chamber containing the resistive heaters, and a small conduction pathway for removing gases from other regions of the chamber. Temperature measurement sensors include thermocouples and optical pyrometers, with the advantage that a thermocouple may be used to calibrate an optical pyrometer in situ. An insulating shutter may be used to insulate the port through which substrates are inserted into the insulated and heated cavity. Support posts and gas injectors may include ports for optical pyrometers.
摘要翻译：相对于传统的灯加热系统，半导体衬底处理系统和使用具有大热质量的稳定的热源的方法。选择系统尺寸和处理参数以向基板提供实质的热通量，同时减少对周围环境，特别是从热源和基板的边缘的热损失的潜力。本发明的方面包括双电阻加热器系统，其包括被周边或边缘加热器包围的基座或主加热器。边缘加热器的阻抗可以与初级加热器的阻抗基本匹配，使得单个电源可以用于向两个加热器供电。两个电阻加热器将热量传递到加热块，并且加热器和加热块基本上封闭在绝缘腔内。绝缘腔的壁可以包括多层绝缘体，并且这些层可以基本上同心地布置。最内层可包括碳化硅涂覆的石墨; 外层可以包括不透明的石英。本发明的实施例包括具有用于从包含电阻加热器的室的区域排出气体的大的传导路径的真空阀芯，以及用于从腔室的其它区域去除气体的小的传导路径。温度测量传感器包括热电偶和光学高温计，其优点是热电偶可用于原位校准光学高温计。可以使用绝缘快门来将通过哪个基板插入绝缘和加热腔的端口绝缘。支撑柱和气体注入器可以包括用于光学高温计的端口。

6. 发明授权

US06301434B1 Apparatus and method for CVD and thermal processing of semiconductor substrates 失效
标题翻译：用于半导体衬底的CVD和热处理的装置和方法
公开(公告)号：US06301434B1
公开(公告)日：2001-10-09
申请号：US09274815
申请日：1999-03-22
申请人： James McDiarmid , Kristian E. Johnsgard , Steven E. Parks , Mark W. Johnsgard
发明人： James McDiarmid , Kristian E. Johnsgard , Steven E. Parks , Mark W. Johnsgard
IPC分类号： F26B1900
CPC分类号： H01L21/67115 , C23C16/4404 , C23C16/481 , C23C16/488
摘要： A thermal processing system and method for processing a semiconductor substrate. A lamp system radiates through a window to heat the substrate. A dual gas manifold provides purge gas through a top showerhead to prevent deposits on the window and provides gas through a lower showerhead to deposit a material on the substrate. A thin support and a radiative cavity with thin radiation shields is used to support and insulate the substrate. A peripheral heater also heats the edges to enhance uniformity. An opaque quartz liner is used to reduce contaminants and undesired deposits and simplify cleaning.
摘要翻译：一种用于处理半导体衬底的热处理系统和方法。灯系统通过窗口辐射以加热基板。双气体歧管通过顶部淋浴头提供净化气体，以防止窗户上的沉积物，并通过下部喷头提供气体以将材料沉积在基底上。使用薄支撑和具有薄辐射屏蔽的辐射腔来支撑和绝缘基板。外围加热器还加热边缘以增强均匀性。使用不透明的石英衬垫来减少污染物和不期望的沉积物并简化清洁。

7. 发明授权

US07176417B2 Apparatuses and methods for resistively heating a thermal processing system 有权
标题翻译：用于电阻加热热处理系统的装置和方法
公开(公告)号：US07176417B2
公开(公告)日：2007-02-13
申请号：US09998801
申请日：2001-11-15
申请人： Kristian E. Johnsgard , Daniel L. Messineo , David E. Sallows
发明人： Kristian E. Johnsgard , Daniel L. Messineo , David E. Sallows
IPC分类号： H05B3/68
CPC分类号： H01L21/67103
摘要： A resistive heater having a doped ceramic heating element embedded either partially or completely within a matrix of undoped ceramic material. The ceramic may be silicon carbide, and the dopant may be nitrogen. Many of the advantages of the present heater stern from the fact that the materials used for the heating elements and the matrix material surrounding those elements have substantially the same coefficient of thermal expansion. In one embodiment, the heater is a monolithic plate that is compact, strong, robust, and low in thermal mass, allowing it to respond quickly to power input variations. The resistive heater may be used in many of the reactors and processing chambers used to fabricate integrated circuits, such as those that deposit epitaxial films, and carry out rapid thermal processing.
摘要翻译：一种具有掺杂的陶瓷加热元件的电阻加热器，其部分或完全嵌入未掺杂陶瓷材料的基体内。陶瓷可以是碳化硅，掺杂剂可以是氮。由于用于加热元件的材料和围绕这些元件的基体材料具有基本上相同的热膨胀系数，所以本发明加热器尾部的许多优点在于，在一个实施例中，加热器是紧凑的，坚固的，坚固的和热质量低的整体板，允许其快速响应于功率输入变化。电阻加热器可以用于许多用于制造集成电路的反应器和处理室，例如沉积外延膜的集成电路，并进行快速热处理。

8. 发明授权

US06902622B2 Systems and methods for epitaxially depositing films on a semiconductor substrate 有权
标题翻译：在半导体衬底上外延沉积膜的系统和方法
公开(公告)号：US06902622B2
公开(公告)日：2005-06-07
申请号：US10120186
申请日：2002-04-10
申请人： Kristian E. Johnsgard , David E. Sallows , Daniel L. Messineo , Robert D. Mailho , Mark W. Johnsgard
发明人： Kristian E. Johnsgard , David E. Sallows , Daniel L. Messineo , Robert D. Mailho , Mark W. Johnsgard
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C30B25/08 , C30B25/14 , H01L21/00 , H01L21/205 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45504 , C23C16/455 , C23C16/45519 , C23C16/45578 , C23C16/4584 , C23C16/46 , C30B25/08 , C30B25/14 , H01L21/67017 , H01L21/6715 , H01L21/68742 , H01L21/68771 , H01L21/68785
摘要： Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead.
摘要翻译：用于外延沉积的系统和方法。反应器包括由加热器系统，隔热系统和室壁包围的热壁工艺空腔。工艺空腔的壁可以包括具有与半导体衬底（例如石英和碳化硅）基本相似的系数热膨胀的材料，并且可以包括可被加热到高达1200℃的温度的等温或近等温腔可以通过多个端口注入工艺气体，并且能够实现气体组分（包括膜源气体，掺杂剂源气体和载气）的分布控制的精细水平。气体供应系统包括将气体输送到过程腔的附加方法，例如通过温度测量装置，以及通过喷头。

9. 发明授权

US06399921B1 System and method for thermal processing of a semiconductor substrate 失效
标题翻译：半导体衬底的热处理系统和方法
公开(公告)号：US06399921B1
公开(公告)日：2002-06-04
申请号：US09490741
申请日：2000-01-25
申请人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
发明人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
IPC分类号： A21B100
CPC分类号： C23C16/4411 , C23C16/46 , C23C16/466 , C30B25/10 , C30B31/12 , H01L21/67109 , H01L21/687
摘要： A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. Insulating walls comprising a reflective material, such as polished tungsten, encapsulated within an inert insulating material such as quartz, may be used to provide insulation. The isothermal nature of the processing region may be enhanced by using multiple layers of insulating walls, actively heated insulating walls or a conductive gas to enhance heat transfer to the semiconductor substrate. A semiconductor substrate may be heated and cooled in stages in the processing system to avoid slip. Proximity, conductive gases and cooling gases may be used to increase or decrease the level of heating in stages.
摘要翻译：相对于传统的灯加热系统，使用具有大热质量的稳定的热源的半导体衬底处理系统和方法。选择系统尺寸和处理参数以向晶片提供实质的热通量，同时最小化对周围环境（特别是从热源和晶片的边缘）的热损失。热源提供晶片温度均匀性分布，在低压下在温度范围内具有低的方差。电阻加热块基本封闭在用于加热晶片的绝缘真空腔内。可以使用包含诸如抛光的钨的反射材料的绝缘壁，其包封在诸如石英的惰性绝缘材料内，以提供绝缘。可以通过使用多层绝缘壁，主动加热的绝缘壁或导电气体来增强对半导体衬底的热传递来增强处理区域的等温性质。半导体衬底可以在处理系统中分阶段加热和冷却以避免滑动。靠近，导电气体和冷却气体可用于逐级增加或降低加热水平。

10. 发明授权

US06436796B1 Systems and methods for epitaxial processing of a semiconductor substrate 有权
标题翻译：用于半导体衬底的外延处理的系统和方法
公开(公告)号：US06436796B1
公开(公告)日：2002-08-20
申请号：US09495402
申请日：2000-01-31
申请人： Robert D. Mailho , Mark J. O'Hara , Glenn A. Pfefferkorn , Gary Lee Evans , Kristian E. Johnsgard
发明人： Robert D. Mailho , Mark J. O'Hara , Glenn A. Pfefferkorn , Gary Lee Evans , Kristian E. Johnsgard
IPC分类号： H01L2120
CPC分类号： H01L21/67115 , C23C16/46 , C30B25/10
摘要： A thermal processing system and method for processing a semiconductor substrate. An inductor couples energy to a susceptor, wherein the spacing between the inductor and the susceptor is configured for the steady-state portions of a CVD epitaxial deposition process. The temperature uniformity of the susceptor is improved during the transient portions of the process, the heat ramp-up and cool down, by varying the distance of separation between the inductor and the susceptor. Temperature non-uniformities are a common cause of slip. Additional aspects of the invention provide for improved thermal shielding of the edges and top surface of the susceptor. Thicker susceptors also improve temperature uniformity.
摘要翻译：一种用于处理半导体衬底的热处理系统和方法。电感器将能量耦合到基座，其中电感器和基座之间的间隔被配置用于CVD外延沉积工艺的稳态部分。通过改变电感器和基座之间的间隔距离，可以在过程的瞬态部分，加热和冷却过程中改善感受体的温度均匀性。温度不均匀是滑动的常见原因。本发明的另外的方面提供了对基座的边缘和顶表面的改进的热屏蔽。较厚的感受体也可改善温度均匀性。

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