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1. 发明授权

US06902622B2 Systems and methods for epitaxially depositing films on a semiconductor substrate 有权
标题翻译：在半导体衬底上外延沉积膜的系统和方法
公开(公告)号：US06902622B2
公开(公告)日：2005-06-07
申请号：US10120186
申请日：2002-04-10
申请人： Kristian E. Johnsgard , David E. Sallows , Daniel L. Messineo , Robert D. Mailho , Mark W. Johnsgard
发明人： Kristian E. Johnsgard , David E. Sallows , Daniel L. Messineo , Robert D. Mailho , Mark W. Johnsgard
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/46 , C30B25/08 , C30B25/14 , H01L21/00 , H01L21/205 , H01L21/687 , C23C16/00
CPC分类号： C23C16/45504 , C23C16/455 , C23C16/45519 , C23C16/45578 , C23C16/4584 , C23C16/46 , C30B25/08 , C30B25/14 , H01L21/67017 , H01L21/6715 , H01L21/68742 , H01L21/68771 , H01L21/68785
摘要： Systems and methods for epitaxial deposition. The reactor includes a hot wall process cavity enclosed by a heater system, a thermal insulation system, and chamber walls. The walls of the process cavity may comprises a material having a substantially similar coefficient thermal expansion as the semiconductor substrate, such as quartz and silicon carbide, and may include an isothermal or near isothermal cavity that may be heated to temperatures as high as 1200 degrees C. Process gases may be injected through a plurality of ports, and are capable of achieving a fine level of distribution control of the gas components, including the film source gas, dopant source gas, and carrier gas. The gas supply system includes additional methods of delivering gas to the process cavity, such as through temperature measurement devices, and through a showerhead.
摘要翻译：用于外延沉积的系统和方法。反应器包括由加热器系统，隔热系统和室壁包围的热壁工艺空腔。工艺空腔的壁可以包括具有与半导体衬底（例如石英和碳化硅）基本相似的系数热膨胀的材料，并且可以包括可被加热到高达1200℃的温度的等温或近等温腔可以通过多个端口注入工艺气体，并且能够实现气体组分（包括膜源气体，掺杂剂源气体和载气）的分布控制的精细水平。气体供应系统包括将气体输送到过程腔的附加方法，例如通过温度测量装置，以及通过喷头。

2. 发明授权

US07176417B2 Apparatuses and methods for resistively heating a thermal processing system 有权
标题翻译：用于电阻加热热处理系统的装置和方法
公开(公告)号：US07176417B2
公开(公告)日：2007-02-13
申请号：US09998801
申请日：2001-11-15
申请人： Kristian E. Johnsgard , Daniel L. Messineo , David E. Sallows
发明人： Kristian E. Johnsgard , Daniel L. Messineo , David E. Sallows
IPC分类号： H05B3/68
CPC分类号： H01L21/67103
摘要： A resistive heater having a doped ceramic heating element embedded either partially or completely within a matrix of undoped ceramic material. The ceramic may be silicon carbide, and the dopant may be nitrogen. Many of the advantages of the present heater stern from the fact that the materials used for the heating elements and the matrix material surrounding those elements have substantially the same coefficient of thermal expansion. In one embodiment, the heater is a monolithic plate that is compact, strong, robust, and low in thermal mass, allowing it to respond quickly to power input variations. The resistive heater may be used in many of the reactors and processing chambers used to fabricate integrated circuits, such as those that deposit epitaxial films, and carry out rapid thermal processing.
摘要翻译：一种具有掺杂的陶瓷加热元件的电阻加热器，其部分或完全嵌入未掺杂陶瓷材料的基体内。陶瓷可以是碳化硅，掺杂剂可以是氮。由于用于加热元件的材料和围绕这些元件的基体材料具有基本上相同的热膨胀系数，所以本发明加热器尾部的许多优点在于，在一个实施例中，加热器是紧凑的，坚固的，坚固的和热质量低的整体板，允许其快速响应于功率输入变化。电阻加热器可以用于许多用于制造集成电路的反应器和处理室，例如沉积外延膜的集成电路，并进行快速热处理。

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