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1. 发明授权

US06403925B1 System and method for thermal processing of a semiconductor substrate 失效
标题翻译：半导体衬底的热处理系统和方法
公开(公告)号：US06403925B1
公开(公告)日：2002-06-11
申请号：US09695899
申请日：2000-10-25
申请人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
发明人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
IPC分类号： C23C1600
CPC分类号： C23C16/4411 , C23C16/46 , C23C16/466 , C30B25/10 , C30B31/12
摘要： A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. A vacuum region is preferably provided between the heated block and the insulating material as well as between the insulating material and the chamber wall. Heat transfer across the vacuum regions is primarily achieved by radiation, while heat transfer through the insulating material is achieved by conduction. The wafer is placed on or near the heated block within the vacuum cavity for heating by conduction and radiation. The rate of heating may be controlled by varying pressure across a range of very low pressures.
摘要翻译：相对于传统的灯加热系统，使用具有大热质量的稳定的热源的半导体衬底处理系统和方法。选择系统尺寸和处理参数以向晶片提供实质的热通量，同时最小化对周围环境（特别是从热源和晶片的边缘）的热损失。热源提供晶片温度均匀性分布，在低压下在温度范围内具有低的方差。电阻加热块基本封闭在用于加热晶片的绝缘真空腔内。优选地，在加热块和绝缘材料之间以及绝缘材料和室壁之间设置真空区域。通过真空区域的热传递主要通过辐射来实现，而通过绝缘材料的传热通过传导实现。将晶片放置在真空腔内的加热块上或附近，以通过传导和辐射进行加热。加热速率可以通过在非常低的压力范围内变化的压力来控制。

2. 发明授权

US06200634B1 Thermal processing system with supplemental resistive heater and shielded optical pyrometry 有权
标题翻译：具有补充电阻加热器和屏蔽光学高温计的热处理系统
公开(公告)号：US06200634B1
公开(公告)日：2001-03-13
申请号：US09133844
申请日：1998-08-14
申请人： Kristian E. Johnsgard , James McDiarmid
发明人： Kristian E. Johnsgard , James McDiarmid
IPC分类号： C23C1600
CPC分类号： H01L21/67248 , C23C16/481 , G01J5/0003 , H01L21/67115
摘要： System and method for determining thermal characteristics, such as temperature, temperature uniformity and emissivity, during thermal processing using shielded pyrometry. The surface of a semiconductor substrate is shielded to prevent interference from extrinsic light from radiant heating sources and to form an effective black-body cavity. An optical sensor is positioned to sense emitted light in the cavity for pyrometry. The effective emissivity of the cavity approaches unity independent of the semiconductor substrate material which simplifies temperature calculation. The shield may be used to prevent undesired backside deposition. Multiple sensors may be used to detect temperature differences across the substrate and in response heaters may be adjusted to enhance temperature uniformity.
摘要翻译：在使用屏蔽高温测量的热处理期间确定热特性的温度，温度均匀性和发射率的系统和方法。屏蔽半导体衬底的表面以防止来自辐射加热源的外在光的干扰并形成有效的黑体腔。定位光学传感器以感测空腔中的发射光用于高温测量。空腔的有效发射率与简化温度计算的半导体衬底材料无关，达到单位。屏蔽可用于防止不希望的背面沉积。可以使用多个传感器来检测穿过基底的温差，并且可以调节加热器以提高温度均匀性。

3. 发明授权

US06301434B1 Apparatus and method for CVD and thermal processing of semiconductor substrates 失效
标题翻译：用于半导体衬底的CVD和热处理的装置和方法
公开(公告)号：US06301434B1
公开(公告)日：2001-10-09
申请号：US09274815
申请日：1999-03-22
申请人： James McDiarmid , Kristian E. Johnsgard , Steven E. Parks , Mark W. Johnsgard
发明人： James McDiarmid , Kristian E. Johnsgard , Steven E. Parks , Mark W. Johnsgard
IPC分类号： F26B1900
CPC分类号： H01L21/67115 , C23C16/4404 , C23C16/481 , C23C16/488
摘要： A thermal processing system and method for processing a semiconductor substrate. A lamp system radiates through a window to heat the substrate. A dual gas manifold provides purge gas through a top showerhead to prevent deposits on the window and provides gas through a lower showerhead to deposit a material on the substrate. A thin support and a radiative cavity with thin radiation shields is used to support and insulate the substrate. A peripheral heater also heats the edges to enhance uniformity. An opaque quartz liner is used to reduce contaminants and undesired deposits and simplify cleaning.
摘要翻译：一种用于处理半导体衬底的热处理系统和方法。灯系统通过窗口辐射以加热基板。双气体歧管通过顶部淋浴头提供净化气体，以防止窗户上的沉积物，并通过下部喷头提供气体以将材料沉积在基底上。使用薄支撑和具有薄辐射屏蔽的辐射腔来支撑和绝缘基板。外围加热器还加热边缘以增强均匀性。使用不透明的石英衬垫来减少污染物和不期望的沉积物并简化清洁。

4. 发明授权

US5242501A Susceptor in chemical vapor deposition reactors 失效
标题翻译：化学气相沉积反应器中的受体
公开(公告)号：US5242501A
公开(公告)日：1993-09-07
申请号：US376950
申请日：1989-07-07
申请人： James McDiarmid
发明人： James McDiarmid
IPC分类号： C23C16/458 , C30B25/12
CPC分类号： C30B25/12 , C23C16/4583
摘要： An improved chemical reactor of the type for depositing a layer of material epitaxially onto a wafer of single crystalline silicon is disclosed. The reactor has a susceptor for supporting each wafer in a cavity of the susceptor with the cavity being curvilinearly shaped. Cavities of a particular shape and dimensions is particularly effective in reducing dislocations in the deposited epitaxial layer.
摘要翻译：公开了一种改进的用于将外延材料层沉积在单晶硅晶片上的类型的化学反应器。该反应器具有一个基座，用于支撑基座的空腔中的每个晶片，其空腔是曲线形的。特定形状和尺寸的凹穴在减少沉积的外延层中的位错中特别有效。

5. 发明申请

US20080092812A1 Methods and Apparatuses for Depositing Uniform Layers 审中-公开
标题翻译：沉积均匀层的方法和装置
公开(公告)号：US20080092812A1
公开(公告)日：2008-04-24
申请号：US11628925
申请日：2005-06-10
申请人： James McDiarmid , Ronald Colvin , John Rose , Earl Samuels
发明人： James McDiarmid , Ronald Colvin , John Rose , Earl Samuels
IPC分类号： C23C16/52 , H01L21/36
CPC分类号： H01L21/67017
摘要： An apparatus including a process chamber and a gas flow control system for depositing layers having uniform properties on substrates.
摘要翻译：一种包括处理室和气体流量控制系统的装置，用于在基板上沉积具有均匀性质的层。

6. 发明授权

US5830277A Thermal processing system with supplemental resistive heater and shielded optical pyrometry 失效
标题翻译：具有补充电阻加热器和屏蔽光学高温计的热处理系统
公开(公告)号：US5830277A
公开(公告)日：1998-11-03
申请号：US451789
申请日：1995-05-26
申请人： Kristian E. Johnsgard , James McDiarmid
发明人： Kristian E. Johnsgard , James McDiarmid
IPC分类号： C23C16/48 , G01J5/00 , H01L21/00 , C23C16/00 , F27B5/14 , F27D11/00
CPC分类号： H01L21/67248 , C23C16/481 , G01J5/0003 , H01L21/67115
摘要： System and method for determining thermal characteristics, such as temperature, temperature uniformity and emissivity, during thermal processing using shielded pyrometry. The surface of a semiconductor substrate is shielded to prevent interference from extrinsic light from radiant heating sources and to form an effective black-body cavity. An optical sensor is positioned to sense emitted light in the cavity for pyrometry. The effective emissivity of the cavity approaches unity independent of the semiconductor substrate material which simplifies temperature calculation. The shield may be used to prevent undesired backside deposition. Multiple sensors may be used to detect temperature differences across the substrate and in response heaters may be adjusted to enhance temperature uniformity.
摘要翻译：在使用屏蔽高温测量的热处理期间确定热特性的温度，温度均匀性和发射率的系统和方法。屏蔽半导体衬底的表面以防止来自辐射加热源的外在光的干扰并形成有效的黑体腔。定位光学传感器以感测空腔中的发射光用于高温测量。空腔的有效发射率与简化温度计算的半导体衬底材料无关，达到单位。屏蔽可用于防止不希望的背面沉积。可以使用多个传感器来检测穿过基底的温差，并且可以调节加热器以提高温度均匀性。

7. 发明授权

US06399921B1 System and method for thermal processing of a semiconductor substrate 失效
标题翻译：半导体衬底的热处理系统和方法
公开(公告)号：US06399921B1
公开(公告)日：2002-06-04
申请号：US09490741
申请日：2000-01-25
申请人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
发明人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
IPC分类号： A21B100
CPC分类号： C23C16/4411 , C23C16/46 , C23C16/466 , C30B25/10 , C30B31/12 , H01L21/67109 , H01L21/687
摘要： A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. Insulating walls comprising a reflective material, such as polished tungsten, encapsulated within an inert insulating material such as quartz, may be used to provide insulation. The isothermal nature of the processing region may be enhanced by using multiple layers of insulating walls, actively heated insulating walls or a conductive gas to enhance heat transfer to the semiconductor substrate. A semiconductor substrate may be heated and cooled in stages in the processing system to avoid slip. Proximity, conductive gases and cooling gases may be used to increase or decrease the level of heating in stages.
摘要翻译：相对于传统的灯加热系统，使用具有大热质量的稳定的热源的半导体衬底处理系统和方法。选择系统尺寸和处理参数以向晶片提供实质的热通量，同时最小化对周围环境（特别是从热源和晶片的边缘）的热损失。热源提供晶片温度均匀性分布，在低压下在温度范围内具有低的方差。电阻加热块基本封闭在用于加热晶片的绝缘真空腔内。可以使用包含诸如抛光的钨的反射材料的绝缘壁，其包封在诸如石英的惰性绝缘材料内，以提供绝缘。可以通过使用多层绝缘壁，主动加热的绝缘壁或导电气体来增强对半导体衬底的热传递来增强处理区域的等温性质。半导体衬底可以在处理系统中分阶段加热和冷却以避免滑动。靠近，导电气体和冷却气体可用于逐级增加或降低加热水平。

8. 发明授权

US4823735A Reflector apparatus for chemical vapor deposition reactors 失效
标题翻译：化学气相沉积反应器反射装置
公开(公告)号：US4823735A
公开(公告)日：1989-04-25
申请号：US48716
申请日：1987-05-12
申请人： Marlowe A. Pichel , James McDiarmid , Glenn A. Pfefferkorn , Roger P. Cory
发明人： Marlowe A. Pichel , James McDiarmid , Glenn A. Pfefferkorn , Roger P. Cory
IPC分类号： C23C16/24 , C23C16/44 , C23C16/48 , C30B25/10 , H01L21/205 , C23C16/00
CPC分类号： C30B25/105 , C23C16/481
摘要： A reflector apparatus with multiple reflecting facets for chemical vapor deposition reactors. For vertical and barrel reactors, the facets are annular and fit around the bell-jar shaped process enclosure. The facets may be adjusted by orienting or curving the reflecting facet surfaces so that the radiant energy from the reactor susceptor may be reflected back to the susceptor and wafers as desired for uniform heating of the processed semiconductor wafers.

9. 发明授权

US06172337B2 System and method for thermal processing of a semiconductor substrate 有权
标题翻译：半导体衬底的热处理系统和方法
公开(公告)号：US06172337B2
公开(公告)日：2001-01-09
申请号：US09349523
申请日：1999-07-08
申请人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
发明人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
IPC分类号： C23C1600
CPC分类号： C23C16/4411 , C23C16/46 , C23C16/466 , C30B25/10 , C30B31/12
摘要： A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. A vacuum region is preferably provided between the heated block and the insulating material as well as between the insulating material and the chamber wall. Heat transfer across the vacuum regions is primarily achieved by radiation, while heat transfer through the insulating material is achieved by conduction. The wafer is placed on or near the heated block within the vacuum cavity for heating by conduction and radiation. The rate of heating may be controlled by varying pressure across a range of very low pressures.
摘要翻译：相对于传统的灯加热系统，使用具有大热质量的稳定的热源的半导体衬底处理系统和方法。选择系统尺寸和处理参数以向晶片提供实质的热通量，同时最小化对周围环境（特别是从热源和晶片的边缘）的热损失。热源提供晶片温度均匀性分布，在低压下在温度范围内具有低的方差。电阻加热块基本封闭在用于加热晶片的绝缘真空腔内。优选地，在加热块和绝缘材料之间以及绝缘材料和室壁之间设置真空区域。通过真空区域的热传递主要通过辐射来实现，而通过绝缘材料的传热通过传导实现。将晶片放置在真空腔内的加热块上或附近，以通过传导和辐射进行加热。加热速率可以通过在非常低的压力范围内变化的压力来控制。

10. 发明授权

US6046439A System and method for thermal processing of a semiconductor substrate 失效
标题翻译：半导体衬底的热处理系统和方法
公开(公告)号：US6046439A
公开(公告)日：2000-04-04
申请号：US876788
申请日：1997-06-16
申请人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
发明人： Kristian E. Johnsgard , Brad S. Mattson , James McDiarmid , Vladimir J. Zeitlin
IPC分类号： C23C16/46 , C30B25/10 , C30B31/12 , H01L21/00 , H01L21/687 , H05B3/68
CPC分类号： C23C16/4411 , C23C16/46 , C23C16/466 , C30B25/10 , C30B31/12 , H01L21/67109 , H01L21/687
摘要： A semiconductor substrate processing system and method using a stable heating source with a large thermal mass relative to conventional lamp heated systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the wafer while minimizing heat loss to the surrounding environment (particularly from the edges of the heat source and wafer). The heat source provides a wafer temperature uniformity profile that has a low variance across temperature ranges at low pressures. A resistively heated block is substantially enclosed within an insulated vacuum cavity used to heat the wafer. Insulating walls comprising a reflective material, such as polished tungsten, encapsulated within an inert insulating material, such as quartz, may be used to provide insulation. The isothermal nature of the processing region may be enhanced by using multiple layers of insulating walls, actively heated insulating walls or a conductive gas to enhance heat transfer to the semiconductor substrate. A semiconductor substrate may be heated and cooled in stages in the processing system to avoid slip. Proximity, conductive gases and cooling gases may be used to increase or decrease the level of heating in stages.
摘要翻译：相对于传统的灯加热系统，使用具有大热质量的稳定的热源的半导体衬底处理系统和方法。选择系统尺寸和处理参数以向晶片提供实质的热通量，同时最小化对周围环境（特别是从热源和晶片的边缘）的热损失。热源提供晶片温度均匀性分布，在低压下在温度范围内具有低的方差。电阻加热块基本封闭在用于加热晶片的绝缘真空腔内。可以使用包含诸如石英在惰性绝缘材料中的反射材料（例如抛光的钨）的绝缘壁来提供绝缘。可以通过使用多层绝缘壁，主动加热的绝缘壁或导电气体来增强对半导体衬底的热传递来增强处理区域的等温性质。半导体衬底可以在处理系统中分阶段加热和冷却以避免滑动。靠近，导电气体和冷却气体可用于逐级增加或降低加热水平。

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