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1. 发明授权

US08012258B2 Melt surface position monitoring apparatus in silicon single crystal growth process 有权
标题翻译：熔体表面位置监测装置在硅单晶生长过程中
公开(公告)号：US08012258B2
公开(公告)日：2011-09-06
申请号：US11802792
申请日：2007-05-25
申请人： Hiroshi Hayakawa , Tokuji Maeda
发明人： Hiroshi Hayakawa , Tokuji Maeda
IPC分类号： C30B15/00
CPC分类号： C30B15/20 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012 , Y10T117/1024 , Y10T117/1032 , Y10T117/1072
摘要： The liquid surface position of the melt in the crucible in the silicon single crystal growth process utilizing the Czochralski method is monitored using the melt surface position on the occasion of seeding as a reference position and an estimated melt surface position can be calculated according to every situation, so that the distance between the melt and the thermal shield or water-cooling structure can be controlled with high precision. When the estimated melt surface position passes a preset upper limit and approaches the thermal shield, an alarm goes off and, further, when the melt comes into contact with the thermal shield or approaches the water-cooling structure, an alarm goes off if desired and, at the same time, the crucible is forcedly stopped from moving, so that a serious accident such as steam-incurred explosion resulting from the melt coming into contact with the water-cooling structure can be prevented. Accordingly, the apparatus can be widely applied as a melt surface position monitoring apparatus making it possible to safely operate any silicon single crystal growth apparatus utilizing the Czochralski method.
摘要翻译：使用Czochralski方法的硅单晶生长工艺中的坩埚中的熔体的液体表面位置使用在接种时的熔融表面位置作为参考位置进行监测，并且可以根据每种情况计算估计的熔体表面位置，从而可以高精度地控制熔体与热屏蔽或水冷结构之间的距离。当估计的熔体表面位置经过预设的上限并接近热屏蔽时，报警器熄灭，此外，当熔体与热屏蔽接触或接近水冷结构时，如果需要则报警熄灭，同时，坩埚被强制停止移动，从而可以防止熔体与水冷结构接触引起的蒸汽引起的爆炸等严重事故。因此，可以广泛地应用该装置作为熔体表面位置监测装置，使得可以使用Czochralski方法安全地操作任何硅单晶生长装置。

2. 发明授权

US07264674B2 Method for pulling a single crystal 有权
标题翻译：拉单晶的方法
公开(公告)号：US07264674B2
公开(公告)日：2007-09-04
申请号：US10923864
申请日：2004-08-24
申请人： Keiichi Takanashi , Tokuji Maeda , Ken Hamada
发明人： Keiichi Takanashi , Tokuji Maeda , Ken Hamada
IPC分类号： C30B15/20
CPC分类号： C30B15/20 , C30B15/30 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus is used to pull a single crystal, wherein a flow of an inert gas to the single crystal to be grown, a pressure in an apparatus body, and a temperature environment are always kept constant by keeping a melt level at a prescribed position in spite of changes in volume of a quartz crucible between batches and thermal deformation of the quartz crucible, so that high quality single crystals can be pulled. The apparatus has a reference reflector arranged inside an apparatus body, a level position measuring unit to measure an actual level position by detecting a mirror image position of the reference reflector reflected in the melt surface using a one-dimensional CCD camera arranged outside the apparatus body, a crucible ascent speed adjustment value calculating unit to calculate an adjustment value of the crucible ascent speed based on an output from the level position measuring unit, an adjustment value adding unit to add the adjustment value to the crucible ascent speed, and a level position controlling unit to control the level position in the crucible by controlling a motor for crucible lifting based on an output from the adjustment value adding means to control the crucible ascent speed.
摘要翻译：使用一种装置来拉动单晶，其中通过将熔体水平保持在规定位置的熔融水平，使得待生长的单晶的惰性气体流，装置主体中的压力和温度环境总是保持恒定尽管石英坩埚在批次之间的体积变化和石英坩埚的热变形，从而可以拉高品质的单晶。该装置具有布置在装置本体内的参考反射器，水平位置测量单元，用于通过使用布置在装置主体外部的一维CCD照相机检测反射在熔体表面中的参考反射体的镜像位置来测量实际水平位置坩埚上升速度调节值计算单元，用于根据来自水平位置测量单元的输出来计算坩埚上升速度的调节值;调节值添加单元，用于将调节值加到坩埚上升速度;以及水平位置控制单元，通过基于来自调节值相加装置的输出控制坩埚上升的电动机来控制坩埚上升速度来控制坩埚中的液位位置。

3. 发明授权

US06411391B1 Crystal section shape measuring method 有权
标题翻译：水晶截面形状测量方法
公开(公告)号：US06411391B1
公开(公告)日：2002-06-25
申请号：US09429107
申请日：1999-10-28
申请人： Keiichi Takanashi , Kazuo Hiramoto , Tokuji Maeda
发明人： Keiichi Takanashi , Kazuo Hiramoto , Tokuji Maeda
IPC分类号： C30B1526
CPC分类号： C30B15/26
摘要： A method of measuring a crystal section shape of a crystal being pulled from a crystal melt while rotating, including taking an image of the base of the crystal in horizontal and vertical directions with a two-dimensional camera set at an upper oblique position over the crystal; setting at least two horizontal light measuring lines in the image taken by the two-dimensional camera, being arranged in parallel in the vertical direction; detecting pairs of intersection points, at which a fusion ring intersects the two horizontal light measuring lines; transforming a position of each of the intersection points into a position of a point located on a line passing through a crystal center; determining diameters of the crystal based on the transformed positions and on time lags between two intersection points of each of the pairs of intersection points.
摘要翻译：一种测量在旋转时从晶体熔融物中被拉出的晶体的晶体截面形状的方法，包括：将水晶和垂直方向上的晶体基底的图像设置在晶体上方的上倾斜位置上的二维相机 ; 在二维摄像机拍摄的图像中设置至少两个水平光测量线，在垂直方向上平行布置; 检测成对的交点，熔融环与两个水平光测量线相交; 将每个交点的位置变换成位于通过晶体中心的线上的点的位置; 基于变换的位置确定晶体的直径，并且确定每对交点的两个交点之间的时间滞后。

4. 发明授权

US6056819A Method for pulling a single crystal 失效
标题翻译：拉单晶的方法
公开(公告)号：US6056819A
公开(公告)日：2000-05-02
申请号：US52129
申请日：1998-03-31
申请人： Masahiro Ogawa , Toshiyuki Yamamoto , Yoshiyuki Kashiwara , Tokuji Maeda
发明人： Masahiro Ogawa , Toshiyuki Yamamoto , Yoshiyuki Kashiwara , Tokuji Maeda
IPC分类号： C30B15/00 , C30B15/20 , C30B15/26 , C30B29/06 , H01L21/208
CPC分类号： C30B29/06 , C30B15/20 , Y10T117/1004 , Y10T117/1008
摘要： In the pulling of a single crystal, hitherto, it is difficult to reduce the OSF density while the deformation rate is held down within the tolerance, so that it is difficult to improve the quality and productivity. In the present invention, a deviation from a true circle in each part of a single crystal S.sub.n-1 which was pulled in the preceding batch is found and the pulling speed pattern f.sub.pn-1 (L.sub.1) in the preceding batch is updated (f.sub.pn (L.sub.1)) before a single crystal S.sub.n is pulled, in order to pull the single crystal as fast as possible so that the OSF density is small while the deviation is within the tolerance.
摘要翻译：在单晶的拉拔中，迄今为止难以降低OSF密度，同时在公差范围内将变形率降低，难以提高质量和生产率。在本发明中，发现与先前批次中拉出的单晶Sn-1的每个部分中的真圆的偏差，并且更新了上一批中的牵引速度模式fpn-1（L1）（fpn（ L1）），以便尽可能快地拉动单晶，使得OSF密度小，而偏差在容差范围内。

5. 发明授权

US06187090B1 Methods and a device for measuring melt surface temperature within apparatus for pulling a single crystal 有权
标题翻译：用于拉伸单晶的装置内的熔融表面温度测量方法和装置
公开(公告)号：US06187090B1
公开(公告)日：2001-02-13
申请号：US09220685
申请日：1998-12-23
申请人： Tokuji Maeda , Keiichi Takanashi
发明人： Tokuji Maeda , Keiichi Takanashi
IPC分类号： C30B1522
CPC分类号： C30B15/22 , C30B15/26 , Y10T117/1008
摘要： In a conventional method, it is difficult to reject a stray light component with certainty, so that it is difficult to accurately measure the temperature of the melt surface. Since a temperature measuring device and a computing means are expensive, the cost of the measurement tends to be high. Modifications to an existing apparatus for pulling a single crystal are required, which is an inconvenience. In order to solve the above problems, a CCD camera is used for detecting the radiation light luminance distribution of the melt surface, the minimum radiation light luminance Lmin is determined based on the radiation light luminance distribution data measured using the CCD camera, and the temperature TS of the melt surface within an apparatus for pulling a single crystal is computed based on the minimum radiation light luminance Lmin.
摘要翻译：在常规方法中，难以确定地排除杂散光组分，因此难以准确地测量熔体表面的温度。由于温度测量装置和计算装置是昂贵的，所以测量成本趋于高。需要对用于拉出单晶的现有设备进行修改，这是不方便的。为了解决上述问题，使用CCD摄像机来检测熔体表面的照射光亮度分布，基于使用CCD照相机测量的辐射光亮度分布数据来确定最小辐射光亮度Lmin，并且温度基于最小辐射光亮度Lmin计算用于拉出单晶的装置内的熔体表面的TS。

6. 发明申请

US20050022722A1 Method for pulling a single crystal 有权
标题翻译：拉单晶的方法
公开(公告)号：US20050022722A1
公开(公告)日：2005-02-03
申请号：US10923864
申请日：2004-08-24
申请人： Keiichi Takanashi , Tokuji Maeda , Ken Hamada
发明人： Keiichi Takanashi , Tokuji Maeda , Ken Hamada
IPC分类号： C30B15/26 , C30B15/20 , C30B15/30 , C30B29/06 , H01L21/208 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B15/20 , C30B15/30 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus is used to pull a single crystal, wherein a flow of an inert gas to the single crystal to be grown, a pressure in an apparatus body, and a temperature environment are always kept constant by keeping a melt level at a prescribed position in spite of changes in volume of a quartz crucible between batches and thermal deformation of the quartz crucible, so that high quality single crystals can be pulled. The apparatus has a reference reflector arranged inside an apparatus body, a level position measuring unit to measure an actual level position by detecting a mirror image position of the reference reflector reflected in the melt surface using a one-dimensional CCD camera arranged outside the apparatus body, a crucible ascent speed adjustment value calculating unit to calculate an adjustment value of the crucible ascent speed based on an output from the level position measuring unit, an adjustment value adding unit to add the adjustment value to the crucible ascent speed, and a level position controlling unit to control the level position in the crucible by controlling a motor for crucible lifting based on an output from the adjustment value adding means to control the crucible ascent speed.
摘要翻译：使用一种装置来拉动单晶，其中通过将熔体水平保持在规定位置的熔融水平，使得待生长的单晶的惰性气体流，装置主体中的压力和温度环境总是保持恒定尽管石英坩埚在批次之间的体积变化和石英坩埚的热变形，从而可以拉高品质的单晶。该装置具有布置在装置本体内的参考反射器，水平位置测量单元，用于通过使用布置在装置主体外部的一维CCD照相机检测反射在熔体表面中的参考反射体的镜像位置来测量实际水平位置坩埚上升速度调节值计算单元，用于根据来自水平位置测量单元的输出来计算坩埚上升速度的调节值;调节值添加单元，用于将调节值加到坩埚上升速度;以及水平位置控制单元，通过基于来自调节值相加装置的输出控制坩埚上升的电动机来控制坩埚上升速度来控制坩埚中的液位位置。

7. 发明申请

US20070277727A1 Melt surface position monitoring apparatus in silicon single crystal growth process 有权
标题翻译：熔体表面位置监测装置在硅单晶生长过程中
公开(公告)号：US20070277727A1
公开(公告)日：2007-12-06
申请号：US11802792
申请日：2007-05-25
申请人： Hiroshi Hayakawa , Tokuji Maeda
发明人： Hiroshi Hayakawa , Tokuji Maeda
IPC分类号： C30B15/00 , C30B27/02 , C30B23/00
CPC分类号： C30B15/20 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012 , Y10T117/1024 , Y10T117/1032 , Y10T117/1072
摘要： The liquid surface position of the melt in the crucible in the silicon single crystal growth process utilizing the Czochralski method is monitored using the melt surface position on the occasion of seeding as a reference position and an estimated melt surface position can be calculated according to every situation, so that the distance between the melt and the thermal shield or water-cooling structure can be controlled with high precision. When the estimated melt surface position passes a preset upper limit and approaches the thermal shield, an alarm goes off and, further, when the melt comes into contact with the thermal shield or approaches the water-cooling structure, an alarm goes off if desired and, at the same time, the crucible is forcedly stopped from moving, so that a serious accident such as steam-incurred explosion resulting from the melt coming into contact with the water-cooling structure can be prevented. Accordingly, the apparatus can be widely applied as a melt surface position monitoring apparatus making it possible to safely operate any silicon single crystal growth apparatus utilizing the Czochralski method.
摘要翻译：使用Czochralski方法的硅单晶生长工艺中的坩埚中的熔体的液体表面位置使用在接种时的熔融表面位置作为参考位置进行监测，并且可以根据每种情况计算估计的熔体表面位置，从而可以高精度地控制熔体与热屏蔽或水冷结构之间的距离。当估计的熔体表面位置经过预设的上限并接近热屏蔽时，报警器熄灭，此外，当熔体与热屏蔽接触或接近水冷结构时，如果需要则报警熄灭，同时，坩埚被强制停止移动，从而可以防止熔体与水冷结构接触引起的蒸汽引起的爆炸等严重事故。因此，可以广泛地应用该装置作为熔体表面位置监测装置，使得可以使用Czochralski方法安全地操作任何硅单晶生长装置。

8. 发明授权

US06416576B1 Method for producing single crystal 有权
标题翻译：单晶生产方法
公开(公告)号：US06416576B1
公开(公告)日：2002-07-09
申请号：US09864936
申请日：2001-05-25
申请人： Masahiko Mizuta , Tokuji Maeda , Masato Tabuchi
发明人： Masahiko Mizuta , Tokuji Maeda , Masato Tabuchi
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/26
摘要： In pulling a single crystal by CZ method, stable pulling up is carried out in a pulling rate as fast as possible while a crystal deformation is controlled to an aimed value and density of grown-in defects is suppressed to a value below an upper limit value. As an index of deformation of the single crystal from a perfect circle, the aimed value of the crystal deformation is previously determined. The upper limit value of a pulling rate necessary to suppress a defect density to an allowable range is previously calculated from distribution of grown-in defects in the crystal section, the single crystal is pulled up according to a predetermined pulling rate, and then deviation of the achieved value from the aimed value of the crystal deformation in pulling is calculated. The deviation is converted to a correction of the pulling rate. This correction is added to a set value of the pulling rate in the pulling and the result is used as a temporary set value of the pulling rate in the next pulling. The temporary set value is compared with the upper limit value of the above described pulling rate and the smaller value is determined as the pulling rate in the next runs.
摘要翻译：在通过CZ法拉取单晶时，以尽可能快的拉伸速度进行稳定的拉伸，同时将晶体变形控制为目标值，并且将生长的缺陷的密度抑制在低于上限值的值。作为单晶从正圆变形的指标，预先确定晶体变形的目标值。将缺陷密度抑制到容许范围所需的拉拔速度的上限值是从晶体截面中的生长缺陷的分布预先计算出来的，单晶根据规定的拉伸速度被拉起，然后偏离计算从牵引中的晶体变形的目标值得到的值。该偏差被转换为拉动速率的校正。将该校正加到牵引中的拉动速度的设定值，将结果作为下次牵引中的牵引速度的临时设定值。将临时设定值与上述牵引速度的上限值进行比较，并将较小的值确定为下次运行中的牵引速率。

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