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1. 发明授权

US09707659B2 Method and apparatus for polishing workpiece 有权
公开(公告)号：US09707659B2
公开(公告)日：2017-07-18
申请号：US13976205
申请日：2011-10-19
申请人： Shinichi Ogata , Ryuichi Tanimoto , Keiichi Takanashi
发明人： Shinichi Ogata , Ryuichi Tanimoto , Keiichi Takanashi
IPC分类号： B24B37/005 , B24B37/015 , B24B37/08 , B24B37/14 , B24B49/14
CPC分类号： B24B37/005 , B24B37/015 , B24B37/08 , B24B49/14
摘要： In a polishing method of the present invention, the temperature of a carrier plate is measured, and the amount of polishing removal of a workpiece (workpiece) is accurately controlled based on change in the measured temperature of the carrier plate.

2. 发明授权

US08414701B2 Method for manufacturing silicon single crystal in which a crystallization temperature gradient is controlled 有权
标题翻译：制造结晶温度梯度的硅单晶的制造方法
公开(公告)号：US08414701B2
公开(公告)日：2013-04-09
申请号：US12683515
申请日：2010-01-07
申请人： Keiichi Takanashi
发明人： Keiichi Takanashi
IPC分类号： C30B15/26
CPC分类号： C30B29/06 , C30B15/203 , C30B15/26 , Y10T117/10 , Y10T117/1012 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： In this method for manufacturing a silicon single crystal, when growing the silicon single crystal, in order to control the V/G value with high accuracy so as to yield a desired defect-free region, it is important to conduct the pulling at a constant pulling rate. In the method for pulling a silicon single crystal in the present invention, in order to control the V/G value with high accuracy, the distance Δt between the melt surface of the silicon melt and the heat shielding member that is disposed so as to oppose to and to partially cover this melt surface is continuously measured while pulling (growing) the silicon single crystal.
摘要翻译：在制造硅单晶的方法中，当生长硅单晶时，为了产生期望的无缺陷区域以高精度地控制V / G值，重要的是进行拉伸恒定拉率。在本发明的拉制硅单晶的方法中，为了以高精度控制V / G值，硅熔体的熔融表面与隔热构件之间的距离＆Dgrt，被设置为在拉制（生长）硅单晶的同时连续地测量并且部分地覆盖该熔体表面。

3. 发明申请

US20130017763A1 WAFER POLISHING METHOD 有权
标题翻译：波浪抛光方法
公开(公告)号：US20130017763A1
公开(公告)日：2013-01-17
申请号：US13261294
申请日：2010-11-30
申请人： Kazushige Takaishi , Keiichi Takanashi , Tetsurou Taniguchi , Shinichi Ogata , Shunsuke Mikuriya
发明人： Kazushige Takaishi , Keiichi Takanashi , Tetsurou Taniguchi , Shinichi Ogata , Shunsuke Mikuriya
IPC分类号： B24B37/013
CPC分类号： H01L21/02024 , B24B37/013 , B24B37/042 , B24B37/08
摘要： An object of the present invention is to provide a method of polishing silicon wafers, capable of suppressing generation of undesired sounds from carriers and reducing the thickness variation of the wafers after polished.The method is a wafer polishing method in which wafers 20 are polished by supplying a polishing solution to surfaces 30a of a pair of polishing pads 30 positioned above and below carriers 10 each having a circular hole 11 for retaining the wafers 20, the carriers 10 being thinner than the wafers 20; and sliding the polishing pads 30 relatively to the carriers 10, thereby simultaneously polishing both surfaces of the wafers 20 retained in the carriers 10. The method is characterized in that information sourced from the carriers 10 when a difference between the thickness of the carriers 10 and the thickness of the wafers 20 reaches a predetermined value is detected to calculate the thickness of the wafers 20, thereby terminating polishing.
摘要翻译：本发明的目的是提供一种抛光硅晶片的方法，其能够抑制来自载体的不期望的声音的产生并且减少抛光后的晶片的厚度变化。该方法是晶片抛光方法，其中通过将抛光溶液提供给位于载体10上方和下方的一对抛光垫30的表面30a进行研磨，每个抛光垫具有用于保持晶片20的圆形孔11，载体10为比晶片20薄; 并且相对于载体10滑动抛光垫30，从而同时抛光保留在载体10中的晶片20的两个表面。该方法的特征在于，当载体10的厚度和载体10的厚度之间的差异检测晶片20的厚度达到预定值，以计算晶片20的厚度，从而终止抛光。

4. 发明授权

US06187090B1 Methods and a device for measuring melt surface temperature within apparatus for pulling a single crystal 有权
标题翻译：用于拉伸单晶的装置内的熔融表面温度测量方法和装置
公开(公告)号：US06187090B1
公开(公告)日：2001-02-13
申请号：US09220685
申请日：1998-12-23
申请人： Tokuji Maeda , Keiichi Takanashi
发明人： Tokuji Maeda , Keiichi Takanashi
IPC分类号： C30B1522
CPC分类号： C30B15/22 , C30B15/26 , Y10T117/1008
摘要： In a conventional method, it is difficult to reject a stray light component with certainty, so that it is difficult to accurately measure the temperature of the melt surface. Since a temperature measuring device and a computing means are expensive, the cost of the measurement tends to be high. Modifications to an existing apparatus for pulling a single crystal are required, which is an inconvenience. In order to solve the above problems, a CCD camera is used for detecting the radiation light luminance distribution of the melt surface, the minimum radiation light luminance Lmin is determined based on the radiation light luminance distribution data measured using the CCD camera, and the temperature TS of the melt surface within an apparatus for pulling a single crystal is computed based on the minimum radiation light luminance Lmin.
摘要翻译：在常规方法中，难以确定地排除杂散光组分，因此难以准确地测量熔体表面的温度。由于温度测量装置和计算装置是昂贵的，所以测量成本趋于高。需要对用于拉出单晶的现有设备进行修改，这是不方便的。为了解决上述问题，使用CCD摄像机来检测熔体表面的照射光亮度分布，基于使用CCD照相机测量的辐射光亮度分布数据来确定最小辐射光亮度Lmin，并且温度基于最小辐射光亮度Lmin计算用于拉出单晶的装置内的熔体表面的TS。

5. 发明授权

US08900033B2 Wafer polishing method 有权
标题翻译：晶圆抛光方法
公开(公告)号：US08900033B2
公开(公告)日：2014-12-02
申请号：US13261294
申请日：2010-11-30
申请人： Kazushige Takaishi , Keiichi Takanashi , Tetsurou Taniguchi , Shinichi Ogata , Shunsuke Mikuriya
发明人： Kazushige Takaishi , Keiichi Takanashi , Tetsurou Taniguchi , Shinichi Ogata , Shunsuke Mikuriya
IPC分类号： B24B1/00
CPC分类号： H01L21/02024 , B24B37/013 , B24B37/042 , B24B37/08
摘要： An object of the present invention is to provide a method of polishing silicon wafers, capable of suppressing generation of undesired sounds from carriers and reducing the thickness variation of the wafers after polished.The method is a wafer polishing method in which wafers 20 are polished by supplying a polishing solution to surfaces 30a of a pair of polishing pads 30 positioned above and below carriers 10 each having a circular hole 11 for retaining the wafers 20, the carriers 10 being thinner than the wafers 20; and sliding the polishing pads 30 relatively to the carriers 10, thereby simultaneously polishing both surfaces of the wafers 20 retained in the carriers 10. The method is characterized in that information sourced from the carriers 10 when a difference between the thickness of the carriers 10 and the thickness of the wafers 20 reaches a predetermined value is detected to calculate the thickness of the wafers 20, thereby terminating polishing.
摘要翻译：本发明的目的是提供一种抛光硅晶片的方法，其能够抑制来自载体的不期望的声音的产生并且减少抛光后晶片的厚度变化。该方法是晶片抛光方法，其中通过将抛光溶液提供给位于载体10上方和下方的一对抛光垫30的表面30a进行研磨，每个抛光垫具有用于保持晶片20的圆形孔11，载体10为比晶片20薄; 并且相对于载体10滑动抛光垫30，从而同时抛光保留在载体10中的晶片20的两个表面。该方法的特征在于，当载体10的厚度和载体10的厚度之间的差异检测晶片20的厚度达到预定值，以计算晶片20的厚度，从而终止抛光。

6. 发明授权

US08221545B2 Procedure for in-situ determination of thermal gradients at the crystal growth front 有权
标题翻译：在晶体生长前沿原位测定热梯度的程序
公开(公告)号：US08221545B2
公开(公告)日：2012-07-17
申请号：US12221229
申请日：2008-07-31
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/20
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

7. 发明申请

US20110259260A1 SILICON SINGLE CRYSTAL PULL-UP APPARATUS AND METHOD OF MANUFACTURING SILICON SINGLE CRYSTAL 有权
标题翻译：硅单晶拉丝装置及制造硅单晶的方法
公开(公告)号：US20110259260A1
公开(公告)日：2011-10-27
申请号：US13083768
申请日：2011-04-11
申请人： Keiichi TAKANASHI , Kengo HAYASHI , Yasuhito NARUSHIMA
发明人： Keiichi TAKANASHI , Kengo HAYASHI , Yasuhito NARUSHIMA
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/20 , C30B15/26 , C30B35/00 , Y10T117/1068
摘要： A silicon single crystal pull-up apparatus is provided with a chamber into which an inert gas is introduced; a crucible that supports a silicon melt within the chamber; a heater that heats the silicon melt in the crucible; a lifting device for lifting and lowering the crucible; a thermal radiation shield disposed above the crucible; a cylindrical purging tube that is provided inside the thermal radiation shield so as to straighten the inert gas; a CCD camera that photographs the mirror image of the thermal radiation shield reflected on the liquid surface of the silicon melt through the purging tube; a liquid surface level calculator that calculates the liquid surface level of the silicon melt from the position of the mirror image photographed by the camera; and a conversion table creator that creates a conversion table representing a relationship between the liquid surface level of the silicon melt and the mirror image position obtained. The liquid surface level calculator calculates the liquid surface level based on the conversion table.
摘要翻译：硅单晶上拉装置设置有引入惰性气体的室; 在所述室内支撑硅熔体的坩埚; 加热器，其加热坩埚中的硅熔体; 用于提升和降低坩埚的提升装置; 设置在坩埚上方的热辐射屏蔽; 圆柱形清洗管，设置在热辐射屏蔽内部以使惰性气体变直; CCD摄像机，其通过清洗管照射在硅熔体的液面上反射的热辐射屏蔽的镜像; 液面计算器，用于从由照相机拍摄的镜像位置计算出硅熔体的液面; 以及转换表创建器，其创建表示硅熔体的液面与所获得的镜像位置之间的关系的转换表。液面计算器根据转换表计算液面水平。

8. 发明授权

US07264674B2 Method for pulling a single crystal 有权
标题翻译：拉单晶的方法
公开(公告)号：US07264674B2
公开(公告)日：2007-09-04
申请号：US10923864
申请日：2004-08-24
申请人： Keiichi Takanashi , Tokuji Maeda , Ken Hamada
发明人： Keiichi Takanashi , Tokuji Maeda , Ken Hamada
IPC分类号： C30B15/20
CPC分类号： C30B15/20 , C30B15/30 , Y10T117/1032 , Y10T117/1068 , Y10T117/1072
摘要： An apparatus is used to pull a single crystal, wherein a flow of an inert gas to the single crystal to be grown, a pressure in an apparatus body, and a temperature environment are always kept constant by keeping a melt level at a prescribed position in spite of changes in volume of a quartz crucible between batches and thermal deformation of the quartz crucible, so that high quality single crystals can be pulled. The apparatus has a reference reflector arranged inside an apparatus body, a level position measuring unit to measure an actual level position by detecting a mirror image position of the reference reflector reflected in the melt surface using a one-dimensional CCD camera arranged outside the apparatus body, a crucible ascent speed adjustment value calculating unit to calculate an adjustment value of the crucible ascent speed based on an output from the level position measuring unit, an adjustment value adding unit to add the adjustment value to the crucible ascent speed, and a level position controlling unit to control the level position in the crucible by controlling a motor for crucible lifting based on an output from the adjustment value adding means to control the crucible ascent speed.
摘要翻译：使用一种装置来拉动单晶，其中通过将熔体水平保持在规定位置的熔融水平，使得待生长的单晶的惰性气体流，装置主体中的压力和温度环境总是保持恒定尽管石英坩埚在批次之间的体积变化和石英坩埚的热变形，从而可以拉高品质的单晶。该装置具有布置在装置本体内的参考反射器，水平位置测量单元，用于通过使用布置在装置主体外部的一维CCD照相机检测反射在熔体表面中的参考反射体的镜像位置来测量实际水平位置坩埚上升速度调节值计算单元，用于根据来自水平位置测量单元的输出来计算坩埚上升速度的调节值;调节值添加单元，用于将调节值加到坩埚上升速度;以及水平位置控制单元，通过基于来自调节值相加装置的输出控制坩埚上升的电动机来控制坩埚上升速度来控制坩埚中的液位位置。

9. 发明授权

US06411391B1 Crystal section shape measuring method 有权
标题翻译：水晶截面形状测量方法
公开(公告)号：US06411391B1
公开(公告)日：2002-06-25
申请号：US09429107
申请日：1999-10-28
申请人： Keiichi Takanashi , Kazuo Hiramoto , Tokuji Maeda
发明人： Keiichi Takanashi , Kazuo Hiramoto , Tokuji Maeda
IPC分类号： C30B1526
CPC分类号： C30B15/26
摘要： A method of measuring a crystal section shape of a crystal being pulled from a crystal melt while rotating, including taking an image of the base of the crystal in horizontal and vertical directions with a two-dimensional camera set at an upper oblique position over the crystal; setting at least two horizontal light measuring lines in the image taken by the two-dimensional camera, being arranged in parallel in the vertical direction; detecting pairs of intersection points, at which a fusion ring intersects the two horizontal light measuring lines; transforming a position of each of the intersection points into a position of a point located on a line passing through a crystal center; determining diameters of the crystal based on the transformed positions and on time lags between two intersection points of each of the pairs of intersection points.
摘要翻译：一种测量在旋转时从晶体熔融物中被拉出的晶体的晶体截面形状的方法，包括：将水晶和垂直方向上的晶体基底的图像设置在晶体上方的上倾斜位置上的二维相机 ; 在二维摄像机拍摄的图像中设置至少两个水平光测量线，在垂直方向上平行布置; 检测成对的交点，熔融环与两个水平光测量线相交; 将每个交点的位置变换成位于通过晶体中心的线上的点的位置; 基于变换的位置确定晶体的直径，并且确定每对交点的两个交点之间的时间滞后。

10. 发明授权

US08673075B2 Procedure for in-situ determination of thermal gradients at the crystal growth front 有权
标题翻译：在晶体生长前沿原位测定热梯度的程序
公开(公告)号：US08673075B2
公开(公告)日：2014-03-18
申请号：US13434167
申请日：2012-03-29
申请人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
发明人： Benno Orschel , Andrzej Buczkowski , Joel Kearns , Keiichi Takanashi , Volker Todt
IPC分类号： C30B15/22
CPC分类号： C30B15/22 , C30B15/203 , C30B29/06 , Y10T117/1008 , Y10T117/1024 , Y10T117/1032 , Y10T117/1036 , Y10T117/104 , Y10T117/1044 , Y10T117/1048 , Y10T117/1052 , Y10T117/1056 , Y10T117/106 , Y10T117/1064 , Y10T117/1068 , Y10T117/1072
摘要： A method and apparatus for growing a semiconductor crystal include pulling the semiconductor crystal from melt at a pull speed and modulating the pull speed by combining a periodic pull speed with an average speed. The modulation of the pull speed allows in-situ determination of characteristic temperature gradients in the melt and in the crystal during crystal formation. The temperature gradients may be used to control relevant process parameters that affect morphological stability or intrinsic material properties in the finished crystal such as for instance the target pull speed of the crystal or the melt gap, which determines the thermal gradient in the crystal during growth.
摘要翻译：用于生长半导体晶体的方法和装置包括以拉速从熔体中拉出半导体晶体，并通过组合周期性拉速与平均速度来调制拉速。拉速的调制允许在晶体形成期间原位测定熔体和晶体中的特征温度梯度。温度梯度可用于控制影响成品晶体的形态稳定性或本征材料性质的相关工艺参数，例如晶体的目标拉速或熔体间隙，这决定了生长过程中晶体的热梯度。

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