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1. 发明授权

US06203611B1 Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth 有权
标题翻译：控制半导体晶体的生长自动从锥形生长转变为目标直径生长的方法
公开(公告)号：US06203611B1
公开(公告)日：2001-03-20
申请号：US09421187
申请日：1999-10-19
申请人： Steven L. Kimbel , Robert R. Wyand, III
发明人： Steven L. Kimbel , Robert R. Wyand, III
IPC分类号： C30B1526
CPC分类号： C30B15/20 , C30B15/26 , Y10T117/1004 , Y10T117/1008
摘要： A control method for use with a Czochralski crystal puller. The method includes pulling the growing crystal from the melt at a first target pull rate to grow a taper portion of the crystal and measuring the crystal diameter of the taper. The method also includes estimating a slope of the diameter as a function of a change in crystal diameter relative to time and the first target pull rate. The method further includes predicting a crystal diameter Di at which to initiate body growth from the taper as a function of the estimated slope. By increasing the pull rate to a second target pull rate when the measured crystal diameter reaches the predicted crystal diameter Di, the method controls growth of the crystal for transitioning from taper growth to body growth. The method also determines the second target pull rate as a function of the estimated slope when using a predefined diameter Di at which to initiate growth of the crystal body.
摘要翻译：一种用于Czochralski晶体拉拔器的控制方法。该方法包括以第一目标拉伸速率从熔体中拉伸生长的晶体，以生长晶体的锥形部分并测量锥形的晶体直径。该方法还包括估计作为晶体直径相对于时间的变化和第一目标拉伸速率的函数的直径的斜率。该方法还包括根据估计的斜率预测从锥度开始身体生长的晶体直径Di。当测量的晶体直径达到预测的晶体直径Di时，通过将拉伸速率提高到第二目标拉伸速率，该方法控制晶体从锥形增长转变为身体生长的生长。当使用预定直径Di以引发晶体生长时，该方法还确定第二目标拉拔率作为估计斜率的函数。

2. 发明授权

US06171391B2 Method and system for controlling growth of a silicon crystal 有权
标题翻译：控制硅晶体生长的方法和系统
公开(公告)号：US06171391B2
公开(公告)日：2001-01-09
申请号：US09172546
申请日：1998-10-14
申请人： Robert H. Fuerhoff , Mohsen Banan
发明人： Robert H. Fuerhoff , Mohsen Banan
IPC分类号： C30B1526
CPC分类号： C30B29/06 , C30B15/26 , Y10T117/1004 , Y10T117/1008 , Y10T117/1068
摘要： A method and system for determining melt level and reflector position in a Czochralski single crystal growing apparatus. The crystal growing apparatus has a heated crucible containing a silicon melt from which the crystal is pulled. The crystal growing apparatus also has a reflector positioned within the crucible with a central opening through which the crystal is pulled. A camera generates images of a portion of the reflector and a portion of a reflection of the reflector visible on the top surface of the melt. An image processor processes the images as a function of their pixel values to detect an edge of the reflector and an edge of the reflection in the images. A control circuit determines a distance from the camera to the reflector and a distance from the camera to the reflection based on the relative positions of the detected edges in the images. The control circuit determines at least one parameter representative of a condition of the crystal growing apparatus based on the determined distances and controls the apparatus in response to the determined parameter.
摘要翻译：一种用于确定切克劳斯基单晶生长装置中的熔体水平和反射器位置的方法和系统。晶体生长装置具有含有熔融晶体的硅熔体的加热坩埚。晶体生长装置还具有位于坩埚内的反射器，其具有中心开口，晶体被拉出。相机产生反射器的一部分的图像，并且反射器的反射的一部分在熔体的顶表面上可见。图像处理器根据其像素值处理图像以检测反射器的边缘和图像中的反射的边缘。控制电路基于图像中检测到的边缘的相对位置来确定从相机到反射器的距离以及从相机到反射的距离。控制电路基于所确定的距离来确定表示晶体生长装置的状况的至少一个参数，并根据所确定的参数来控制装置。

3. 发明授权

US06411391B1 Crystal section shape measuring method 有权
标题翻译：水晶截面形状测量方法
公开(公告)号：US06411391B1
公开(公告)日：2002-06-25
申请号：US09429107
申请日：1999-10-28
申请人： Keiichi Takanashi , Kazuo Hiramoto , Tokuji Maeda
发明人： Keiichi Takanashi , Kazuo Hiramoto , Tokuji Maeda
IPC分类号： C30B1526
CPC分类号： C30B15/26
摘要： A method of measuring a crystal section shape of a crystal being pulled from a crystal melt while rotating, including taking an image of the base of the crystal in horizontal and vertical directions with a two-dimensional camera set at an upper oblique position over the crystal; setting at least two horizontal light measuring lines in the image taken by the two-dimensional camera, being arranged in parallel in the vertical direction; detecting pairs of intersection points, at which a fusion ring intersects the two horizontal light measuring lines; transforming a position of each of the intersection points into a position of a point located on a line passing through a crystal center; determining diameters of the crystal based on the transformed positions and on time lags between two intersection points of each of the pairs of intersection points.
摘要翻译：一种测量在旋转时从晶体熔融物中被拉出的晶体的晶体截面形状的方法，包括：将水晶和垂直方向上的晶体基底的图像设置在晶体上方的上倾斜位置上的二维相机 ; 在二维摄像机拍摄的图像中设置至少两个水平光测量线，在垂直方向上平行布置; 检测成对的交点，熔融环与两个水平光测量线相交; 将每个交点的位置变换成位于通过晶体中心的线上的点的位置; 基于变换的位置确定晶体的直径，并且确定每对交点的两个交点之间的时间滞后。

4. 发明授权

US06454851B1 Method for preparing molten silicon melt from polycrystalline silicon charge 失效
标题翻译：从多晶硅电荷制备熔融硅熔体的方法
公开(公告)号：US06454851B1
公开(公告)日：2002-09-24
申请号：US09711198
申请日：2000-11-09
申请人： Robert H. Fuerhoff , Mohsen Banan , John D. Holder
发明人： Robert H. Fuerhoff , Mohsen Banan , John D. Holder
IPC分类号： C30B1526
CPC分类号： C30B15/02
摘要： A method and apparatus for preparing molten silicon melt from polycrystalline silicon in a crystal pulling apparatus entails loading an amount of polycrystalline silicon loaded into the crucible less than a predetermined total amount of polycrystalline silicon to be melted. The crucible is heated to form a partially melted charge in the crucible having an island of unmelted polycrystalline silicon exposed above an upper surface of melted silicon. Granular polycrystalline silicon is fed from a feeder onto the island of unmelted polycrystalline silicon until the predetermined total amount of polycrystalline silicon has been loaded into the crucible. The position of the island relative to the crucible side wall is electronically determined as granular polycrystalline silicon is fed onto the island. The feed rate at which granular polycrystalline silicon is fed from the feeder onto the island of unmelted polycrystalline silicon is controlled in response to the determined position of the island relative to the crucible side wall.
摘要翻译：一种在晶体拉制装置中从多晶硅制备熔融硅熔体的方法和装置包括将少量加载到坩埚中的多晶硅负载量小于预定总量的要融化的多晶硅。坩埚被加热以在坩埚中形成部分熔融的电荷，该坩埚具有暴露在熔融硅的上表面之上的未熔化的多晶硅岛。颗粒状多晶硅从进料器进料到未熔化的多晶硅岛上，直到预定总量的多晶硅已经装载到坩埚中。电子地确定岛相对于坩埚侧壁的位置，因为颗粒状多晶硅被馈送到岛上。响应于相对于坩埚侧壁确定的岛的位置，控制粒状多晶硅从进料器供给到未熔化的多晶硅岛上的进料速率。

5. 发明授权

US06294017B1 Growth of semiconductor single crystals 失效
标题翻译：半导体单晶的生长
公开(公告)号：US06294017B1
公开(公告)日：2001-09-25
申请号：US08020443
申请日：1993-02-22
申请人： Donald Thomas James Hurle , Gordon Charles Joyce , Kathryn Elizabeth McKell
发明人： Donald Thomas James Hurle , Gordon Charles Joyce , Kathryn Elizabeth McKell
IPC分类号： C30B1526
CPC分类号： C30B15/28 , Y10T117/1008 , Y10T117/1032
摘要： A method and apparatus for growing single crystal of GaAs, etc uses the Czochralski techniques. Control of crystal (1) diameter is by a closed loop (9, 10, 24, 7, 6) control of melt (4) temperature in response to crystal weight signals (9) W or dW/dt. The invention injects a test signal St (22, 26) into the control loop and performs a signal processing (21), e.g. cross correlation, on St and crystal weight signal. Peak amplitude of correlation values is related to the growing crystal shape. This is used by comparison with reference values (24) to control the growing-out phase from seed diameter (16) to full diameter of the crystal (1).
摘要翻译：用于生长GaAs单晶的方法和装置等使用Czochralski技术。晶体（1）直径的控制是响应于晶体重量信号（9）W或dW / dt，通过闭环（9,10,24,7,6）控制熔体（4）的温度。本发明将测试信号St（22,26）注入到控制回路中并执行信号处理（21），例如，互相关，St和晶体重量信号。相关值的峰值幅度与晶体形状的增长有关。这通过与参考值（24）进行比较来使用，以控制从种子直径（16）到晶体（1）的全部直径的生长期。

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