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1. 发明申请

US20070277727A1 Melt surface position monitoring apparatus in silicon single crystal growth process 有权
标题翻译：熔体表面位置监测装置在硅单晶生长过程中
公开(公告)号：US20070277727A1
公开(公告)日：2007-12-06
申请号：US11802792
申请日：2007-05-25
申请人： Hiroshi Hayakawa , Tokuji Maeda
发明人： Hiroshi Hayakawa , Tokuji Maeda
IPC分类号： C30B15/00 , C30B27/02 , C30B23/00
CPC分类号： C30B15/20 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012 , Y10T117/1024 , Y10T117/1032 , Y10T117/1072
摘要： The liquid surface position of the melt in the crucible in the silicon single crystal growth process utilizing the Czochralski method is monitored using the melt surface position on the occasion of seeding as a reference position and an estimated melt surface position can be calculated according to every situation, so that the distance between the melt and the thermal shield or water-cooling structure can be controlled with high precision. When the estimated melt surface position passes a preset upper limit and approaches the thermal shield, an alarm goes off and, further, when the melt comes into contact with the thermal shield or approaches the water-cooling structure, an alarm goes off if desired and, at the same time, the crucible is forcedly stopped from moving, so that a serious accident such as steam-incurred explosion resulting from the melt coming into contact with the water-cooling structure can be prevented. Accordingly, the apparatus can be widely applied as a melt surface position monitoring apparatus making it possible to safely operate any silicon single crystal growth apparatus utilizing the Czochralski method.
摘要翻译：使用Czochralski方法的硅单晶生长工艺中的坩埚中的熔体的液体表面位置使用在接种时的熔融表面位置作为参考位置进行监测，并且可以根据每种情况计算估计的熔体表面位置，从而可以高精度地控制熔体与热屏蔽或水冷结构之间的距离。当估计的熔体表面位置经过预设的上限并接近热屏蔽时，报警器熄灭，此外，当熔体与热屏蔽接触或接近水冷结构时，如果需要则报警熄灭，同时，坩埚被强制停止移动，从而可以防止熔体与水冷结构接触引起的蒸汽引起的爆炸等严重事故。因此，可以广泛地应用该装置作为熔体表面位置监测装置，使得可以使用Czochralski方法安全地操作任何硅单晶生长装置。

2. 发明授权

US08012258B2 Melt surface position monitoring apparatus in silicon single crystal growth process 有权
标题翻译：熔体表面位置监测装置在硅单晶生长过程中
公开(公告)号：US08012258B2
公开(公告)日：2011-09-06
申请号：US11802792
申请日：2007-05-25
申请人： Hiroshi Hayakawa , Tokuji Maeda
发明人： Hiroshi Hayakawa , Tokuji Maeda
IPC分类号： C30B15/00
CPC分类号： C30B15/20 , C30B29/06 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012 , Y10T117/1024 , Y10T117/1032 , Y10T117/1072
摘要： The liquid surface position of the melt in the crucible in the silicon single crystal growth process utilizing the Czochralski method is monitored using the melt surface position on the occasion of seeding as a reference position and an estimated melt surface position can be calculated according to every situation, so that the distance between the melt and the thermal shield or water-cooling structure can be controlled with high precision. When the estimated melt surface position passes a preset upper limit and approaches the thermal shield, an alarm goes off and, further, when the melt comes into contact with the thermal shield or approaches the water-cooling structure, an alarm goes off if desired and, at the same time, the crucible is forcedly stopped from moving, so that a serious accident such as steam-incurred explosion resulting from the melt coming into contact with the water-cooling structure can be prevented. Accordingly, the apparatus can be widely applied as a melt surface position monitoring apparatus making it possible to safely operate any silicon single crystal growth apparatus utilizing the Czochralski method.
摘要翻译：使用Czochralski方法的硅单晶生长工艺中的坩埚中的熔体的液体表面位置使用在接种时的熔融表面位置作为参考位置进行监测，并且可以根据每种情况计算估计的熔体表面位置，从而可以高精度地控制熔体与热屏蔽或水冷结构之间的距离。当估计的熔体表面位置经过预设的上限并接近热屏蔽时，报警器熄灭，此外，当熔体与热屏蔽接触或接近水冷结构时，如果需要则报警熄灭，同时，坩埚被强制停止移动，从而可以防止熔体与水冷结构接触引起的蒸汽引起的爆炸等严重事故。因此，可以广泛地应用该装置作为熔体表面位置监测装置，使得可以使用Czochralski方法安全地操作任何硅单晶生长装置。

3. 发明申请

US20130330792A1 METHOD FOR PRODUCING CHEMICALS BY CONTINUOUS FERMENTATION 审中-公开
标题翻译：通过连续发酵生产化学品的方法
公开(公告)号：US20130330792A1
公开(公告)日：2013-12-12
申请号：US13976786
申请日：2011-09-15
申请人： Norihiro Takeuchi , Masahiro Henmi , Jihoon Cheon , Masateru Ito , Hiroshi Hayakawa , Makoto Nishida
发明人： Norihiro Takeuchi , Masahiro Henmi , Jihoon Cheon , Masateru Ito , Hiroshi Hayakawa , Makoto Nishida
IPC分类号： C12P7/56
CPC分类号： C12P7/56 , B01D61/025 , B01D65/02 , B01D2311/06 , B01D2311/2642 , B01D2311/2669 , B01D2321/12 , B01D2321/162 , B01D2321/164 , B01D2321/168 , C12M47/10
摘要： A method of producing a chemical by continuous fermentation includes a fermentation step of converting a fermentation feedstock to a fermentation liquid containing a chemical by fermentation on cultivation of a microorganism; a membrane separation step of recovering the chemical as a filtrate by a separation membrane from the fermentation liquid; a concentrating step of obtaining a permeate and a concentrate containing the chemical by a reverse osmosis membrane from the filtrate; and/or a purification step of distilling the filtrate to increase a purity of the chemical, in which, cleaning etc. of the separation membrane in the membrane separation step is preformed by using the permeated liquid from the reverse osmosis membrane in the concentrating step and/or the condensed liquid in the purification step.
摘要翻译：通过连续发酵生产化学品的方法包括发酵步骤，其通过在培养微生物时通过发酵将发酵原料转化成含有化学品的发酵液; 膜分离步骤，通过分离膜从发酵液中回收作为滤液的化学品; 浓缩步骤，从滤液中通过反渗透膜获得含有该化学物质的渗透物和浓缩物; 和/或纯化步骤，蒸馏滤液以提高化学品的纯度，其中通过在浓缩步骤中使用来自反渗透膜的透过液体来进行膜分离步骤中的分离膜的清洗等，以及 /或纯化步骤中的冷凝液体。

4. 发明授权

US08518367B2 Titanium oxide and method of producing the same 有权
标题翻译：氧化钛及其制造方法
公开(公告)号：US08518367B2
公开(公告)日：2013-08-27
申请号：US13130164
申请日：2009-11-12
申请人： Junji Akimoto , Kunimitsu Kataoka , Akemi Kawashima , Hiroshi Hayakawa
发明人： Junji Akimoto , Kunimitsu Kataoka , Akemi Kawashima , Hiroshi Hayakawa
IPC分类号： C01G25/02 , C01G27/02 , C01B6/24 , C01D1/02 , C01G23/00
CPC分类号： C01G23/047 , C01G23/003 , C01G23/005 , C01P2002/72 , C01P2002/77 , C01P2004/03 , C01P2006/40 , H01M4/131 , H01M4/1391 , H01M4/485
摘要： A method of producing a titanium oxide, including the steps of: ion-exchanging a sodium titanium oxide Na2Ti6O13, to synthesize Li2Ti6O13; subjecting Li2Ti6O13 to proton exchange, to give H2Ti6O13; and subjecting H2Ti6O13, as a starting material, to a heat treatment.
摘要翻译：一种氧化钛的制造方法，其特征在于，包括以下工序：离子交换钠二氧化钛Na 2 Ti 6 O 13，合成Li 2 Ti 6 O 13; 使Li2Ti6O13进行质子交换，得到H 2 Ti 6 O 13; 并将作为原料的H 2 Ti 6 O 13进行热处理。

5. 发明申请

US20130080604A1 SYSTEM MANAGEMENT APPARATUS AND SYSTEM MANAGEMENT METHOD 审中-公开
标题翻译：系统管理装置和系统管理方法
公开(公告)号：US20130080604A1
公开(公告)日：2013-03-28
申请号：US13378066
申请日：2011-09-22
申请人： Hiroshi Hayakawa , Takeshi Arisaka , Takaki Kuroda , Takumi Tomita
发明人： Hiroshi Hayakawa , Takeshi Arisaka , Takaki Kuroda , Takumi Tomita
IPC分类号： G06F15/177
CPC分类号： H04L41/022 , H04L41/12
摘要： The present invention is for efficiently managing large numbers of apparatuses using multiple management protocols. A management information acquisition part 1A uses multiple different management protocols P1 and P2 to acquire management information for each of the management protocols from each apparatus 3. Anode configuration information management part 1B identifies apparatus configuration information acquired from the same apparatus of the respective apparatuses 3 by comparing the apparatus configuration information, and collectively manages these multiple pieces of apparatus configuration information as a single piece of apparatus configuration information. A component information management part 1C identifies multiple pieces of component information related to the same component, and manages these identified multiple pieces of component information after associating these pieces information with each other.
摘要翻译：本发明是为了有效地管理使用多种管理协议的大量设备。管理信息获取部1A使用多个不同的管理协议P1和P2从每个装置3获取每个管理协议的管理信息。阳极配置信息管理部分1B识别从各个装置3的相同装置获取的装置配置信息，比较装置配置信息，并将这些多件装置配置信息共同管理为单件装置配置信息。分量信息管理部分1C识别与相同分量相关的多个分量信息，并且在将这些分块信息彼此关联之后管理这些识别的多个分量信息。

6. 发明申请

US20090219599A1 CHANGEABLE APPARATUS FOR SINGLE OR RASTER SCANNING USING POLYGON MIRROR 审中-公开
标题翻译：使用POLYGON MIRROR进行单次扫描和扫描扫描的可变设备
公开(公告)号：US20090219599A1
公开(公告)日：2009-09-03
申请号：US12298341
申请日：2006-05-08
申请人： Hiroshi Hayakawa
发明人： Hiroshi Hayakawa
IPC分类号： G02B26/10
CPC分类号： G02B26/124 , G02B26/101 , G06K7/10613
摘要： A changeable apparatus for scanning a symbol is disclosed wherein by selectively changing the position of a bending mirror (101), different scan patterns are produced. In a preferred embodiment, the different positions of the bending mirror (101) result in a scanning beam (107, 108) being directed off of different polygon scanning mirrors (104, 105) to create the different scanning patterns.
摘要翻译：公开了一种用于扫描符号的可变装置，其中通过选择性地改变弯曲镜（101）的位置，产生不同的扫描图案。在优选实施例中，弯曲镜（101）的不同位置导致扫描光束（107,108）被引导离开不同的多边形扫描镜（104,105）以产生不同的扫描图案。

7. 植物专利

USPP18223P2 Clematis plant ‘Fairy Blue’ 有权
标题翻译：铁线莲植物“仙女蓝”
公开(公告)号：USPP18223P2
公开(公告)日：2007-11-20
申请号：US10367447
申请日：2003-02-14
申请人： Hiroshi Hayakawa
发明人： Hiroshi Hayakawa
IPC分类号： A01H5/00
CPC分类号： A01H5/02
摘要： A new Clematis cultivar which produces attractive violet flowers. This new and distinct variety has shown to be uniform and stable in the resulting generations from asexual propagation.
摘要翻译：一种新的铁线莲品种，产生有吸引力的紫罗兰花。这种新的和独特的品种在无性繁殖的结果中表现出统一和稳定。

8. 发明授权

US07273647B2 Silicon annealed wafer and silicon epitaxial wafer 有权
标题翻译：硅退火晶片和硅外延晶片
公开(公告)号：US07273647B2
公开(公告)日：2007-09-25
申请号：US10809712
申请日：2004-03-26
申请人： Hideshi Nishikawa , Nobumitsu Takase , Kazuyuki Egashira , Hiroshi Hayakawa
发明人： Hideshi Nishikawa , Nobumitsu Takase , Kazuyuki Egashira , Hiroshi Hayakawa
IPC分类号： B32B9/04
CPC分类号： C30B33/00 , C30B29/06 , H01L21/3225 , Y10T428/21
摘要： A silicon annealed wafer having a sufficient thick layer free from COP defects on the surface, and a sufficient uniform BMD density in the inside can be produced by annealing either a base material wafer having nitrogen at a concentration of less than 1×1014 atoms/cm3, COP defects having a size of 0.1 μm or less in the highest frequency of occurrence and no COP defects having a size of 0.2 μm or more, oxygen precipitates at a density of 1×104 counts/cm2 or more, and BMDs (oxygen precipitates), where the ratio of the maximum to the minimum of the BMD density in the radial direction of the wafer is 3 or less, or a base material wafer grown at specific average temperature gradients within specific temperature ranges and specific cooling times for a single crystal at a nitrogen concentration of less than 1×1014 atoms/cm3, employing the Czochralski method. Moreover, a silicon epitaxial wafer having very small defects and a uniform BMD distribution in the inside can be formed by growing an epitaxial layer on the surface of either the first type base material wafer or the second type base material wafer. Both the silicon annealed wafer and the silicon epitaxial wafer greatly reduce the rate of producing defective devices, thereby enabling the device productivity to be enhanced.
摘要翻译：具有在表面上没有COP缺陷的足够厚的厚层的硅退火晶片，并且可以通过退火具有小于1×10 14的浓度的氮的基材晶片来制造内部的足够均匀的BMD密度， / SUP>原子/ cm 3，出现发生频率的大小为0.1μm以下的COP缺陷，没有大小为0.2μm以上的COP缺陷，氧浓度为 1×10 4个/ cm 2以上的BMD（氧沉淀物），其中晶片的径向BMD密度的最大值与最小值之比在特定温度范围内以特定平均温度梯度生长的基材晶片和氮浓度小于1×10 14原子/ cm 2的单晶的比冷却时间为3以下， 3，采用Czochralski法。此外，可以通过在第一类型基材晶片或第二类型基材晶片的表面上生长外延层来形成具有非常小缺陷和均匀的BMD分布的硅外延晶片。硅退火晶片和硅外延晶片都大大降低了制造缺陷器件的速率，从而能够提高器件的生产率。

9. 发明申请

US20070194220A1 Angled CCD image capture device 有权
标题翻译：角度CCD图像捕获装置
公开(公告)号：US20070194220A1
公开(公告)日：2007-08-23
申请号：US11358244
申请日：2006-02-21
申请人： Hiroshi Hayakawa
发明人： Hiroshi Hayakawa
IPC分类号： H01J5/02
CPC分类号： H04N1/00525 , H04N1/195 , H04N2101/00
摘要： A handheld imaging device includes a CCD array or similar detector which is tilted with respect to the incoming light. The tilt permits a narrower handheld device to be manufactured, as the housing need not be as wide as the CCD or similar array.
摘要翻译：手持式成像装置包括相对于入射光倾斜的CCD阵列或类似的检测器。倾斜允许制造更窄的手持装置，因为外壳不需要像CCD或类似阵列一样宽。

10. 发明授权

US6003127A Pipeline processing apparatus for reducing delays in the performance of processing operations 失效
标题翻译：用于减少处理操作性能延迟的管线处理装置
公开(公告)号：US6003127A
公开(公告)日：1999-12-14
申请号：US725709
申请日：1996-10-04
申请人： Hiroshi Hayakawa , Harutsugu Fukumoto , Hiroaki Tanaka
发明人： Hiroshi Hayakawa , Harutsugu Fukumoto , Hiroaki Tanaka
IPC分类号： G06F9/32 , G06F9/38 , G06F9/40
CPC分类号： G06F9/3804 , G06F9/30058 , G06F9/30167
摘要： A pipeline processing apparatus for performing processing operations in a succession of processing cycles, in which each cycle is composed of a succession of stages that include an instruction decoding stage for decoding an instruction associated with the cycle and an execution stage for executing an operation dependent on the instruction, and the processing cycles include a first cycle which starts at a first time and a second cycle that begins at a second time that is after the first time and that overlaps the first cycle in time. The apparatus is constructed and controlled for causing a branch instruction to be decoded in the instruction decoding stage of the first cycle; and for effecting a calculation in the execution stage of the first cycle, dependent on the branch instruction decoded in the instruction decoding stage of the first cycle.
摘要翻译：一种流水线处理装置，用于在一系列处理周期中执行处理操作，其中每个周期由包括用于解码与该周期相关联的指令的指令解码级的一系列级组成，以及用于执行依赖于指令和处理周期包括从第一时间开始的第一周期和从第一次开始的第二个周期开始并且与第一周期重叠的第二周期。该装置被构造和控制，用于使分支指令在第一周期的指令解码阶段被解码; 并且用于在第一周期的执行阶段中进行计算，这取决于在第一周期的指令解码阶段中解码的分支指令。

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