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1. 发明申请

US20200066485A1 Compensated Location Specific Processing Apparatus And Method 审中-公开
公开(公告)号：US20200066485A1
公开(公告)日：2020-02-27
申请号：US16665357
申请日：2019-10-28
申请人： TEL Epion Inc.
发明人： Matthew C. Gwinn , Martin D. Tabat , Kenneth Regan , Allen J. Leith , Michael Graf
IPC分类号： H01J37/304 , H01J37/20 , H01J37/08 , H01J37/147
摘要： An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.

2. 发明申请

US20180197715A1 COMPENSATED LOCATION SPECIFIC PROCESSING APPARATUS AND METHOD 审中-公开
公开(公告)号：US20180197715A1
公开(公告)日：2018-07-12
申请号：US15863732
申请日：2018-01-05
申请人： TEL Epion Inc.
发明人： Matthew C. Gwinn , Martin D. Tabat , Kenneth Regan , Allen J. Leith , Michael Graf
IPC分类号： H01J37/304 , H01J37/20 , H01J37/08 , H01J37/147
摘要： An apparatus and method for processing a workpiece with a beam is described. The apparatus includes a vacuum chamber having a beam-line for forming a particle beam and treating a workpiece with the particle beam, and a scanner for translating the workpiece through the particle beam. The apparatus further includes a scanner control circuit coupled to the scanner, and configured to control a scan property of the scanner, and a beam control circuit coupled to at least one beam-line component, and configured to control the beam flux of the particle beam according to a duty cycle for switching between at least two different states during processing.

3. 发明授权

US09500946B2 Sidewall spacer patterning method using gas cluster ion beam 有权
标题翻译：采用气体簇离子束的侧壁间隔图案化方法
公开(公告)号：US09500946B2
公开(公告)日：2016-11-22
申请号：US14661411
申请日：2015-03-18
申请人： TEL Epion Inc.
发明人： Soo Doo Chae , Youngdon Chang , Il-seok Song , Noel Russell
IPC分类号： H01L21/302 , G03F7/00 , H01L21/308 , C23F4/00
CPC分类号： G03F7/00 , C23F4/00 , G03F7/40 , H01L21/3086
摘要： A method for patterning a substrate is described. The method includes receiving a substrate having a patterned layer, wherein the patterned layer defines a first mandrel pattern, and wherein a first material layer of a first composition is conformally deposited over the first mandrel pattern. The method further includes partially removing the first material layer using a first gas cluster ion beam (GCIB) etching process to expose a top surface of the first mandrel pattern, open a portion of the first material layer at a bottom region adjacent a feature of the first mandrel pattern, and retain a remaining portion of the first material layer on sidewalls of the first mandrel pattern; and selectively removing the first mandrel pattern using one or more etching processes to leave a second mandrel pattern comprising the remaining portion of the first material layer that remained on the sidewalls of the first mandrel pattern.
摘要翻译：描述了用于图案化衬底的方法。该方法包括接收具有图案化层的衬底，其中图案化层限定第一心轴图案，并且其中第一组合物的第一材料层共形沉积在第一心轴图案上。该方法还包括使用第一气体簇离子束（GCIB）蚀刻工艺部分地去除第一材料层，以暴露第一心轴图案的顶表面，在邻近第一心轴图案的特征的底部区域处打开第一材料层的一部分第一心轴图案，并且将第一材料层的剩余部分保持在第一心轴图案的侧壁上; 以及使用一个或多个蚀刻工艺选择性地去除所述第一心轴图案以留下第二心轴图案，所述第二心轴图案包括残留在所述第一心轴图案的侧壁上的所述第一材料层的剩余部分。

4. 发明申请

US20160322266A1 METHOD OF SURFACE PROFILE CORRECTION USING GAS CLUSTER ION BEAM 有权
标题翻译：使用气体束离子束的表面轮廓校正方法
公开(公告)号：US20160322266A1
公开(公告)日：2016-11-03
申请号：US15142147
申请日：2016-04-29
申请人： TEL Epion Inc.
发明人： Noel Russell , Soo Doo Chae , Vincent Gizzo , Joshua LaRose , Nicholas Joy
IPC分类号： H01L21/66 , H01L21/3105 , H01L21/311
CPC分类号： H01L22/20 , H01L21/28079 , H01L21/28088 , H01L21/31051 , H01L21/31055 , H01L21/31116 , H01L21/32115 , H01L21/32135 , H01L22/12
摘要： A method for correcting a surface profile on a substrate is described. In particular, the method includes receiving a substrate having a heterogeneous layer composed of a first material and a second material, wherein the heterogeneous layer has an initial upper surface exposing the first material and the second material, and defining a first surface profile across the substrate. The method further includes setting a target surface profile for the heterogeneous layer, selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile is within a pre-determined tolerance of the target surface profile.
摘要翻译：描述了用于校正衬底上的表面轮廓的方法。特别地，该方法包括接收具有由第一材料和第二材料构成的非均质层的基底，其中所述异质层具有暴露第一材料和第二材料的初始上表面，并且限定穿过基底的第一表面轮廓。该方法还包括设置异质层的目标表面轮廓，使用气体簇离子束（GCIB）蚀刻工艺选择性地去除第一材料的至少一部分，以及使第二材料下方的第一材料凹陷，然后选择性地去除所述第二材料的至少一部分以实现暴露所述第一材料和所述第二材料的最终上表面，并且限定第二表面轮廓，其中所述第二表面轮廓在所述目标表面轮廓的预定公差内。

5. 发明申请

US20130330845A1 GAS CLUSTER ION BEAM PROCESS FOR OPENING CONFORMAL LAYER IN A HIGH ASPECT RATIO CONTACT VIA 有权
标题翻译：用于在高平面比例接触中打开一致性层的气体离子束过程
公开(公告)号：US20130330845A1
公开(公告)日：2013-12-12
申请号：US13841388
申请日：2013-03-15
申请人： TEL EPION INC.
发明人： Christopher K. Olsen , Luis Fernandez
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01J37/32 , H01L21/31111 , H01L21/31116 , H01L21/76802 , H01L21/76831 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A method for patterning a layer at a bottom of a high aspect ratio feature of a substrate is described. The method includes providing the substrate having a first layer with a feature pattern overlying a second layer. The feature pattern is characterized with an initial critical dimension (CD), an initial corner profile, and an aspect ratio of 5:1 or greater. The method further includes etching through at least a portion of the second layer at the bottom of the feature pattern to extend the feature pattern at least partially into the second layer while retaining a final CD within a threshold of the initial CD and a final corner profile within a threshold of the initial corner profile using a gas cluster ion beam (GCIB) etching process.
摘要翻译：描述了用于对基板的高纵横比特征的底部的层进行图案化的方法。该方法包括提供具有覆盖第二层的特征图案的第一层的衬底。特征图案的特征在于初始临界尺寸（CD），初始角形轮廓以及纵横比为5：1或更大。该方法还包括蚀刻穿过特征图案底部的第二层的至少一部分，以将特征图案至少部分地延伸到第二层中，同时将最终的CD保持在初始CD的阈值内，并且最后的角廓线在使用气体簇离子束（GCIB）蚀刻工艺的初始拐角分布的阈值内。

6. 发明申请

US20130309872A1 GAS CLUSTER ION BEAM ETCHING PROCESS FOR ACHIEVING TARGET ETCH PROCESS METRICS FOR MULTIPLE MATERIALS 审中-公开
标题翻译：用于实现多种材料的目标蚀刻过程的气体聚集体离子束蚀刻方法
公开(公告)号：US20130309872A1
公开(公告)日：2013-11-21
申请号：US13950862
申请日：2013-07-25
申请人： TEL Epion Inc.
发明人： Martin D. Tabat , Christopher K. Olsen , Yan Shao , Ruairidh MacCrimmon
IPC分类号： H01L21/306
CPC分类号： H01L21/306 , C23F4/00 , H01L21/3065 , H01L21/31116 , H01L21/31122 , H01L21/31138 , H01L21/32136 , H01L21/32137
摘要： A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics.
摘要翻译：描述了用于进行各种材料的气体簇离子束（GCIB）蚀刻处理的方法和系统。特别地，GCIB蚀刻处理包括设置用于GCIB的GCIB工艺条件的一个或多个GCIB特性以实现一个或多个目标蚀刻工艺度量。

7. 发明授权

US10256095B2 Method for high throughput using beam scan size and beam position in gas cluster ion beam processing system 有权
公开(公告)号：US10256095B2
公开(公告)日：2019-04-09
申请号：US15266639
申请日：2016-09-15
申请人： TEL Epion Inc.
发明人： Soo Doo Chae , Noel Russell , Joshua LaRose , Nicholas Joy , Luis Fernandez , Allen J. Leith , Steven P. Caliendo , Yan Shao , Vincent Lagana-Gizzo
IPC分类号： H01L21/02 , H01L21/66 , G05B19/406 , H01L21/265 , H01L21/263 , H01J37/304
摘要： A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.

8. 发明申请

US20190043766A1 HYBRID CORRECTIVE PROCESSING SYSTEM AND METHOD 审中-公开
公开(公告)号：US20190043766A1
公开(公告)日：2019-02-07
申请号：US16154025
申请日：2018-10-08
申请人： TEL Epion Inc.
发明人： Joshua LaRose , Brian D. Pfeifer , Vincent Lagana-Gizzo , Noel Russell
IPC分类号： H01L21/66 , H01J37/32 , G05B19/418 , H01L21/3065
摘要： A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

9. 发明授权

US09735019B2 Process gas enhancement for beam treatment of a substrate 有权
公开(公告)号：US09735019B2
公开(公告)日：2017-08-15
申请号：US14842416
申请日：2015-09-01
申请人： TEL Epion Inc.
发明人： Michael Graf , Noel Russell , Matthew C. Gwinn , Allen J. Leith
IPC分类号： H01L21/3065 , H01L27/02 , H01J37/305 , H01L21/311 , H01J27/02 , H01L21/3213 , H01J37/317
CPC分类号： H01L21/3065 , H01J27/026 , H01J37/317 , H01J2237/006 , H01J2237/0812 , H01J2237/16 , H01J2237/31732 , H01J2237/3174 , H01L21/31116 , H01L21/32136
摘要： A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.

10. 发明申请

US20170053843A1 HYBRID CORRECTIVE PROCESSING SYSTEM AND METHOD 审中-公开
标题翻译：混合校正处理系统和方法
公开(公告)号：US20170053843A1
公开(公告)日：2017-02-23
申请号：US15242376
申请日：2016-08-19
申请人： TEL Epion Inc.
发明人： Joshua LaRose , Brian D. Pfeifer , Vincent Lagana-Gizzo , Noel Russell
IPC分类号： H01L21/66 , G05B23/02 , G05B19/19 , G05B19/406 , H01J37/32 , H01L21/3065
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/32216 , H01J37/32009 , H01J37/3244 , H01J37/32935 , H01J37/3299 , H01J2237/334 , H01L21/3065 , H01L22/12 , Y02P90/22
摘要： A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.
摘要翻译：描述用于对工件进行校正处理的系统和方法。所述系统和方法包括从第一源接收第一组参数数据，所述第一组在诊断上与微电子工件的至少第一部分相关，以及从不同于诊断相关的第一源的第二源接收第二组参数数据到微电子工件的至少第二部分。此后，产生校正过程，并且通过使用第一组参数数据和第二组参数数据的组合将校正过程应用于目标区域来处理微电子工件的目标区域。

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