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1. 发明授权

US09500946B2 Sidewall spacer patterning method using gas cluster ion beam 有权
标题翻译：采用气体簇离子束的侧壁间隔图案化方法
公开(公告)号：US09500946B2
公开(公告)日：2016-11-22
申请号：US14661411
申请日：2015-03-18
申请人： TEL Epion Inc.
发明人： Soo Doo Chae , Youngdon Chang , Il-seok Song , Noel Russell
IPC分类号： H01L21/302 , G03F7/00 , H01L21/308 , C23F4/00
CPC分类号： G03F7/00 , C23F4/00 , G03F7/40 , H01L21/3086
摘要： A method for patterning a substrate is described. The method includes receiving a substrate having a patterned layer, wherein the patterned layer defines a first mandrel pattern, and wherein a first material layer of a first composition is conformally deposited over the first mandrel pattern. The method further includes partially removing the first material layer using a first gas cluster ion beam (GCIB) etching process to expose a top surface of the first mandrel pattern, open a portion of the first material layer at a bottom region adjacent a feature of the first mandrel pattern, and retain a remaining portion of the first material layer on sidewalls of the first mandrel pattern; and selectively removing the first mandrel pattern using one or more etching processes to leave a second mandrel pattern comprising the remaining portion of the first material layer that remained on the sidewalls of the first mandrel pattern.
摘要翻译：描述了用于图案化衬底的方法。该方法包括接收具有图案化层的衬底，其中图案化层限定第一心轴图案，并且其中第一组合物的第一材料层共形沉积在第一心轴图案上。该方法还包括使用第一气体簇离子束（GCIB）蚀刻工艺部分地去除第一材料层，以暴露第一心轴图案的顶表面，在邻近第一心轴图案的特征的底部区域处打开第一材料层的一部分第一心轴图案，并且将第一材料层的剩余部分保持在第一心轴图案的侧壁上; 以及使用一个或多个蚀刻工艺选择性地去除所述第一心轴图案以留下第二心轴图案，所述第二心轴图案包括残留在所述第一心轴图案的侧壁上的所述第一材料层的剩余部分。

2. 发明申请

US20160322266A1 METHOD OF SURFACE PROFILE CORRECTION USING GAS CLUSTER ION BEAM 有权
标题翻译：使用气体束离子束的表面轮廓校正方法
公开(公告)号：US20160322266A1
公开(公告)日：2016-11-03
申请号：US15142147
申请日：2016-04-29
申请人： TEL Epion Inc.
发明人： Noel Russell , Soo Doo Chae , Vincent Gizzo , Joshua LaRose , Nicholas Joy
IPC分类号： H01L21/66 , H01L21/3105 , H01L21/311
CPC分类号： H01L22/20 , H01L21/28079 , H01L21/28088 , H01L21/31051 , H01L21/31055 , H01L21/31116 , H01L21/32115 , H01L21/32135 , H01L22/12
摘要： A method for correcting a surface profile on a substrate is described. In particular, the method includes receiving a substrate having a heterogeneous layer composed of a first material and a second material, wherein the heterogeneous layer has an initial upper surface exposing the first material and the second material, and defining a first surface profile across the substrate. The method further includes setting a target surface profile for the heterogeneous layer, selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile is within a pre-determined tolerance of the target surface profile.
摘要翻译：描述了用于校正衬底上的表面轮廓的方法。特别地，该方法包括接收具有由第一材料和第二材料构成的非均质层的基底，其中所述异质层具有暴露第一材料和第二材料的初始上表面，并且限定穿过基底的第一表面轮廓。该方法还包括设置异质层的目标表面轮廓，使用气体簇离子束（GCIB）蚀刻工艺选择性地去除第一材料的至少一部分，以及使第二材料下方的第一材料凹陷，然后选择性地去除所述第二材料的至少一部分以实现暴露所述第一材料和所述第二材料的最终上表面，并且限定第二表面轮廓，其中所述第二表面轮廓在所述目标表面轮廓的预定公差内。

3. 发明授权

US10256095B2 Method for high throughput using beam scan size and beam position in gas cluster ion beam processing system 有权
公开(公告)号：US10256095B2
公开(公告)日：2019-04-09
申请号：US15266639
申请日：2016-09-15
申请人： TEL Epion Inc.
发明人： Soo Doo Chae , Noel Russell , Joshua LaRose , Nicholas Joy , Luis Fernandez , Allen J. Leith , Steven P. Caliendo , Yan Shao , Vincent Lagana-Gizzo
IPC分类号： H01L21/02 , H01L21/66 , G05B19/406 , H01L21/265 , H01L21/263 , H01J37/304
摘要： A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.

4. 发明申请

US20190043766A1 HYBRID CORRECTIVE PROCESSING SYSTEM AND METHOD 审中-公开
公开(公告)号：US20190043766A1
公开(公告)日：2019-02-07
申请号：US16154025
申请日：2018-10-08
申请人： TEL Epion Inc.
发明人： Joshua LaRose , Brian D. Pfeifer , Vincent Lagana-Gizzo , Noel Russell
IPC分类号： H01L21/66 , H01J37/32 , G05B19/418 , H01L21/3065
摘要： A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.

5. 发明授权

US09735019B2 Process gas enhancement for beam treatment of a substrate 有权
公开(公告)号：US09735019B2
公开(公告)日：2017-08-15
申请号：US14842416
申请日：2015-09-01
申请人： TEL Epion Inc.
发明人： Michael Graf , Noel Russell , Matthew C. Gwinn , Allen J. Leith
IPC分类号： H01L21/3065 , H01L27/02 , H01J37/305 , H01L21/311 , H01J27/02 , H01L21/3213 , H01J37/317
CPC分类号： H01L21/3065 , H01J27/026 , H01J37/317 , H01J2237/006 , H01J2237/0812 , H01J2237/16 , H01J2237/31732 , H01J2237/3174 , H01L21/31116 , H01L21/32136
摘要： A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.

6. 发明申请

US20170053843A1 HYBRID CORRECTIVE PROCESSING SYSTEM AND METHOD 审中-公开
标题翻译：混合校正处理系统和方法
公开(公告)号：US20170053843A1
公开(公告)日：2017-02-23
申请号：US15242376
申请日：2016-08-19
申请人： TEL Epion Inc.
发明人： Joshua LaRose , Brian D. Pfeifer , Vincent Lagana-Gizzo , Noel Russell
IPC分类号： H01L21/66 , G05B23/02 , G05B19/19 , G05B19/406 , H01J37/32 , H01L21/3065
CPC分类号： H01L22/20 , G05B19/41875 , G05B2219/32216 , H01J37/32009 , H01J37/3244 , H01J37/32935 , H01J37/3299 , H01J2237/334 , H01L21/3065 , H01L22/12 , Y02P90/22
摘要： A system and method for performing corrective processing of a workpiece is described. The system and method includes receiving a first set of parametric data from a first source that diagnostically relates to at least a first portion of a microelectronic workpiece, and receiving a second set of parametric data from a second source different than the first source that diagnostically relates to at least a second portion of the microelectronic workpiece. Thereafter, a corrective process is generated, and a target region of the microelectronic workpiece is processed by applying the corrective process to the target region using a combination of the first set of parametric data and the second set of parametric data.
摘要翻译：描述用于对工件进行校正处理的系统和方法。所述系统和方法包括从第一源接收第一组参数数据，所述第一组在诊断上与微电子工件的至少第一部分相关，以及从不同于诊断相关的第一源的第二源接收第二组参数数据到微电子工件的至少第二部分。此后，产生校正过程，并且通过使用第一组参数数据和第二组参数数据的组合将校正过程应用于目标区域来处理微电子工件的目标区域。

7. 发明授权

US08709944B2 Method to alter silicide properties using GCIB treatment 有权
公开(公告)号：US08709944B2
公开(公告)日：2014-04-29
申请号：US13888981
申请日：2013-05-07
申请人： TEL Epion Inc.
发明人： Noel Russell , John J. Hautala , John Gumpher
IPC分类号： H01L21/20
CPC分类号： H01L21/28506 , C23C14/02 , C23C14/024 , C23C14/16 , C23C14/5833 , H01J37/08 , H01J37/317 , H01J2237/0812 , H01J2237/3165 , H01L21/02063 , H01L21/28518 , H01L21/3205
摘要： A method of manufacturing a semiconductor device is described. The method comprises performing a gas cluster ion beam (GCIB) pre-treatment and/or post-treatment of at least a portion of a silicon-containing substrate during formation of a silicide region.

8. 发明授权

US09875947B2 Method of surface profile correction using gas cluster ion beam 有权
公开(公告)号：US09875947B2
公开(公告)日：2018-01-23
申请号：US15142147
申请日：2016-04-29
申请人： TEL Epion Inc.
发明人： Noel Russell , Soo Doo Chae , Vincent Gizzo , Joshua LaRose , Nicholas Joy
IPC分类号： H01L21/66 , H01L21/311 , H01L21/28 , H01L21/3105 , H01L21/321 , H01L21/3213
CPC分类号： H01L22/20 , H01L21/28079 , H01L21/28088 , H01L21/31051 , H01L21/31055 , H01L21/31116 , H01L21/32115 , H01L21/32135 , H01L22/12
摘要： A method for correcting a surface profile on a substrate is described. In particular, the method includes receiving a substrate having a heterogeneous layer composed of a first material and a second material, wherein the heterogeneous layer has an initial upper surface exposing the first material and the second material, and defining a first surface profile across the substrate. The method further includes setting a target surface profile for the heterogeneous layer, selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile is within a pre-determined tolerance of the target surface profile.

9. 发明授权

US09502209B2 Multi-step location specific process for substrate edge profile correction for GCIB system 有权
公开(公告)号：US09502209B2
公开(公告)日：2016-11-22
申请号：US14822172
申请日：2015-08-10
申请人： TEL Epion Inc.
发明人： Hongyu H. Yue , Noel Russell , Vincent Gizzo , Joshua LaRose , Steven P. Caliendo
IPC分类号： G21K5/04 , H01J37/20 , H01J37/317 , H01J37/305
CPC分类号： H01J37/20 , H01J37/305 , H01J37/3056 , H01J37/3171 , H01J2237/0812 , H01J2237/202 , H01J2237/30483
摘要： Disclosed are an apparatus, system, and method for scanning a substrate or other workpiece through a gas-cluster ion beam (GCIB), or any other type of ion beam. The workpiece scanning apparatus is configured to receive and hold a substrate for irradiation by the GCIB and to scan it through the GCIB in two directions using two movements: a reciprocating fast-scan movement, and a slow-scan movement. The slow-scan movement is actuated using a servo motor and a belt drive system, the belt drive system being configured to reduce the failure rate of the workpiece scanning apparatus.

10. 发明授权

US09123505B1 Apparatus and methods for implementing predicted systematic error correction in location specific processing 有权
标题翻译：在位置特定处理中实现预测的系统误差校正的装置和方法
公开(公告)号：US09123505B1
公开(公告)日：2015-09-01
申请号：US14492819
申请日：2014-09-22
申请人： TEL Epion Inc.
发明人： Vincent Lagana-Gizzo , Noel Russell , Joshua LaRose , Soo Doo Chae
IPC分类号： H01J37/304 , H01J37/317 , H01J37/30
CPC分类号： H01J37/304 , H01J37/3005 , H01J37/3053 , H01J2237/08 , H01J2237/30455 , H01J2237/3151 , H01J2237/317
摘要： A method of modifying an upper layer of a workpiece using a gas cluster ion beam (GCIB) is described. The method includes collecting parametric data relating to an upper layer of a workpiece, and determining a predicted systematic error response for applying a GCIB to the upper layer to alter an initial profile of a measured attribute by using the parametric data. Additionally, the method includes identifying a target profile of the measured attribute, directing the GCIB toward the upper layer of the workpiece, and spatially modulating an applied property of the GCIB, based at least in part on the predicted systematic error response and the parametric data, as a function of position on the upper layer of the workpiece to achieve the target profile of the measured attribute.
摘要翻译：描述了使用气体簇离子束（GCIB）修饰工件的上层的方法。该方法包括收集与工件的上层相关的参数数据，以及通过使用参数数据确定用于将GCIB应用于上层以改变测量属性的初始简档的预测的系统误差响应。另外，该方法包括至少部分地基于预测的系统误差响应和参数数据来识别所测量的属性的目标轮廓，将GCIB引向工件的上层，以及空间调制GCIB的应用属性，作为工件上层位置的函数，以达到测量属性的目标轮廓。

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