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    • 1. 发明申请
    • METHOD OF SURFACE PROFILE CORRECTION USING GAS CLUSTER ION BEAM
    • 使用气体束离子束的表面轮廓校正方法
    • US20160322266A1
    • 2016-11-03
    • US15142147
    • 2016-04-29
    • TEL Epion Inc.
    • Noel RussellSoo Doo ChaeVincent GizzoJoshua LaRoseNicholas Joy
    • H01L21/66H01L21/3105H01L21/311
    • H01L22/20H01L21/28079H01L21/28088H01L21/31051H01L21/31055H01L21/31116H01L21/32115H01L21/32135H01L22/12
    • A method for correcting a surface profile on a substrate is described. In particular, the method includes receiving a substrate having a heterogeneous layer composed of a first material and a second material, wherein the heterogeneous layer has an initial upper surface exposing the first material and the second material, and defining a first surface profile across the substrate. The method further includes setting a target surface profile for the heterogeneous layer, selectively removing at least a portion of the first material using a gas cluster ion beam (GCIB) etching process, and recessing the first material beneath the second material, and thereafter, selectively removing at least a portion of the second material to achieve a final upper surface exposing the first material and the second material, and defining a second surface profile, wherein the second surface profile is within a pre-determined tolerance of the target surface profile.
    • 描述了用于校正衬底上的表面轮廓的方法。 特别地,该方法包括接收具有由第一材料和第二材料构成的非均质层的基底,其中所述异质层具有暴露第一材料和第二材料的初始上表面,并且限定穿过基底的第一表面轮廓 。 该方法还包括设置异质层的目标表面轮廓,使用气体簇离子束(GCIB)蚀刻工艺选择性地去除第一材料的至少一部分,以及使第二材料下方的第一材料凹陷,然后选择性地 去除所述第二材料的至少一部分以实现暴露所述第一材料和所述第二材料的最终上表面,并且限定第二表面轮廓,其中所述第二表面轮廓在所述目标表面轮廓的预定公差内。