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1. 发明申请

US20060255391A1 METHOD OF FORMING A RELIABLE HIGH PERFORMANCE CAPACITOR USING AN ISOTROPIC ETCHING PROCESS 审中-公开
标题翻译：使用等压蚀刻工艺形成可靠的高性能电容器的方法
公开(公告)号：US20060255391A1
公开(公告)日：2006-11-16
申请号：US11459595
申请日：2006-07-24
申请人： Seung-Beom KIM , Won-Mo PARK , Yun-Jae LEE , Joon-Mo KWON , Myoung-Hee HAN , Man-Jong YU
发明人： Seung-Beom KIM , Won-Mo PARK , Yun-Jae LEE , Joon-Mo KWON , Myoung-Hee HAN , Man-Jong YU
IPC分类号： H01L29/00 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852
摘要： Disclosed herein is a method of forming a reliable high performance capacitor using an isotropic etching process to optimize the surface area of the lower electrodes while preventing an electrical bridge from forming between the lower electrodes. This method includes multiple sacrificial oxide layers that are formed over a substrate, an insulating layer with contact plugs, and an etch stopping layer. The sacrificial oxide layers are patterned and additionally isotropically etched to form an expanded capacitor hole. An exposed portion of the etch stopping layer is then etched to form a final capacitor hole exposing an upper portion of the contact plug and a portion of the insulating layer adjacent thereto. The semiconductor substrate having the final capacitor hole is cleaned to remove a native oxide film on the exposed upper portion of the contact plug.
摘要翻译：本文公开了一种使用各向同性蚀刻工艺形成可靠的高性能电容器的方法，以优化下电极的表面积同时防止在下电极之间形成电桥。该方法包括在衬底上形成的多个牺牲氧化物层，具有接触插塞的绝缘层和蚀刻停止层。将牺牲氧化物层图案化并另外进行各向同性蚀刻以形成扩大的电容器孔。然后蚀刻停止层的暴露部分以形成露出接触插塞的上部和与其相邻的绝缘层的一部分的最终电容器孔。清洁具有最终电容器孔的半导体衬底以去除接触插塞的暴露的上部上的自然氧化膜。

2. 发明申请

US20080079090A1 Semiconductor device including recessed spherical silicide contact part and method of manufacturing the same 审中-公开
标题翻译：包括凹形球形硅化物接触部件的半导体器件及其制造方法
公开(公告)号：US20080079090A1
公开(公告)日：2008-04-03
申请号：US11900772
申请日：2007-09-13
申请人： Hong-kyu Hwang , Dae-ik Kim , Seung-beom Kim
发明人： Hong-kyu Hwang , Dae-ik Kim , Seung-beom Kim
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/76804 , H01L21/76834 , H01L21/76889 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and fabrication method thereof protect an overgrown metal silicide layer from external damage. The semiconductor device includes: isolation regions formed on a substrate; source/drain regions in the substrate between the isolation regions; a first interlayer insulating film on the substrate, the isolation regions and the source/drain regions; contact pads vertically penetrating the first interlayer insulating film and electrically connected to the source/drain regions; a second interlayer insulating film on the first interlayer insulating film and the contact pads; a metal silicide region selectively formed on the contact pads at a vertical position that is lower than an upper surface of the first interlayer insulating film; and a contact plug vertically penetrating the second interlayer insulating film and electrically connected to the metal silicide region.
摘要翻译：一种半导体器件及其制造方法，其保护过度生长的金属硅化物层免受外部损坏。半导体器件包括：形成在衬底上的隔离区; 在隔离区之间的衬底中的源/漏区; 衬底上的第一层间绝缘膜，隔离区和源极/漏极区; 垂直穿过第一层间绝缘膜并电连接到源极/漏极区的接触焊盘; 在第一层间绝缘膜和接触焊盘上的第二层间绝缘膜; 选择性地形成在所述接触焊盘上的垂直位置处的金属硅化物区域，所述垂直位置比所述第一层间绝缘膜的上表面低; 以及垂直贯穿第二层间绝缘膜并与金属硅化物区电连接的接触插塞。

3. 发明申请

US20100241985A1 Providing Virtual Keyboard 审中-公开
标题翻译：提供虚拟键盘
公开(公告)号：US20100241985A1
公开(公告)日：2010-09-23
申请号：US12729002
申请日：2010-03-22
申请人： Seung Beom Kim , Jong Woong Lee
发明人： Seung Beom Kim , Jong Woong Lee
IPC分类号： G06F3/048
CPC分类号： G06F3/04886
摘要： Apparatus and methods are described for providing a virtual keyboard. In one aspect, an apparatus for providing a virtual keyboard to be displayed on a touch screen is described. The apparatus includes a memory unit that includes a data repository to store data comprising at least one virtual keyboard configuration information to configure at least one corresponding virtual keyboard. The apparatus includes a processing module to select from the data stored in the data repository a given virtual keyboard configuration information to select a corresponding virtual keyboard to configure; configure the selected virtual keyboard to have a fan-like shape with multiple keys of the virtual keyboard arranged along an outline of an arc in a fan-shaped region based on the selected virtual keyboard configuration information; and instruct a touch screen module to display the configured virtual keyboard on a display region of a touch screen.
摘要翻译：描述了用于提供虚拟键盘的装置和方法。在一个方面，描述了一种用于提供要在触摸屏上显示的虚拟键盘的装置。该装置包括存储器单元，其包括数据存储库，用于存储包括至少一个虚拟键盘配置信息的数据，以配置至少一个对应的虚拟键盘。该装置包括处理模块，用于从存储在数据存储库中的数据中选择给定的虚拟键盘配置信息，以选择相应的虚拟键盘进行配置; 基于所选择的虚拟键盘配置信息，将所选择的虚拟键盘配置为具有扇形形状，其中沿着弧形轮廓排列的虚拟键盘的多个键布置在扇形区域中; 并且指示触摸屏模块在触摸屏的显示区域上显示配置的虚拟键盘。

4. 发明申请

US20110116483A1 TCP DATA THROUGHOUT ENHANCEMENT FOR WLAN CLIENTS ON A WIRELESS LAN ROUTER 审中-公开
标题翻译： TCP数据通过无线LAN路由器上的WLAN客户端增强
公开(公告)号：US20110116483A1
公开(公告)日：2011-05-19
申请号：US12618628
申请日：2009-11-13
申请人： Yong Sang Lee , Seung Beom Kim
发明人： Yong Sang Lee , Seung Beom Kim
IPC分类号： H04W40/00
CPC分类号： H04L69/16 , H04L1/1887 , H04L69/163 , H04L2001/0097 , H04W80/06
摘要： A server may be bypassed in the context of retransmitting data packets, when such data packets are missing or lost due to interference or some other network error. Decreased throughput and other disadvantages associated with data packet retransmission are avoided by negating the need to transmit retransmission request packets to the server and retransmitting a missing/lost data packet from the server. Instead, retransmission request packets may be sent to a router, and the router may respond by directly retransmitting the missing/lost data packet to the client, where prior to retransmitting the missing/lost data packet, it is determined whether the data packet is a Transport Control Protocol or User Datagram Protocol packet, and proceeding with the retransmitting only if the data packets is a Transport Control Protocol packet.
摘要翻译：当这种数据包由于干扰或某些其他网络错误而丢失或丢失时，可能会在重发数据包的上下文中绕过服务器。通过否定向服务器发送重传请求分组的需要并从服务器重传丢失/丢失的数据分组来避免与数据分组重传相关联的吞吐量和其他缺点的降低。相反，重传请求分组可以被发送到路由器，并且路由器可以通过直接重传丢失/丢失的数据分组给客户机来进行响应，其中在重传丢失/丢失的数据分组之前，确定数据分组是否是传输控制协议或用户数据报协议分组，并且仅当数据分组是传输控制协议分组时才进行重传。

5. 发明授权

US07101769B2 Method of forming a reliable high performance capacitor using an isotropic etching process 有权
标题翻译：使用各向同性蚀刻工艺形成可靠的高性能电容器的方法
公开(公告)号：US07101769B2
公开(公告)日：2006-09-05
申请号：US10776546
申请日：2004-02-10
申请人： Seung-Beom Kim , Won-Mo Park , Yun-Jae Lee , Joon-Mo Kwon , Myoung-Hee Han , Man-Jong Yu
发明人： Seung-Beom Kim , Won-Mo Park , Yun-Jae Lee , Joon-Mo Kwon , Myoung-Hee Han , Man-Jong Yu
IPC分类号： H01L21/20
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852
摘要： Disclosed herein is a method of forming a reliable high performance capacitor using an isotropic etching process to optimize the surface area of the lower electrodes while preventing an electrical bridge from forming between the lower electrodes. This method includes multiple sacrificial oxide layers that are formed over a substrate, an insulating layer with contact plugs, and an etch stopping layer. The sacrificial oxide layers are patterned and additionally isotropically etched to form an expanded capacitor hole. An exposed portion of the etch stopping layer is then etched to form a final capacitor hole exposing an upper portion of the contact plug and a portion of the insulating layer adjacent thereto. The semiconductor substrate having the final capacitor hole is cleaned to remove a native oxide film on the exposed upper portion of the contact plug.
摘要翻译：本文公开了一种使用各向同性蚀刻工艺形成可靠的高性能电容器的方法，以优化下电极的表面积，同时防止在下电极之间形成电桥。该方法包括在衬底上形成的多个牺牲氧化物层，具有接触插塞的绝缘层和蚀刻停止层。将牺牲氧化物层图案化并另外进行各向同性蚀刻以形成扩大的电容器孔。然后蚀刻停止层的暴露部分以形成露出接触插塞的上部和与其相邻的绝缘层的一部分的最终电容器孔。清洁具有最终电容器孔的半导体衬底以去除接触插塞的暴露的上部上的自然氧化膜。

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