专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09715992B2 Integrated optical and charged particle inspection apparatus 有权
公开(公告)号：US09715992B2
公开(公告)日：2017-07-25
申请号：US14390095
申请日：2013-04-02
申请人： DELMIC B.V. , Jacob Pieter Hoogenboom , Pieter Kruit , Nalan M. SC Liv , Aernout Christiaan Zonnevylle
发明人： Jacob Pieter Hoogenboom , Pieter Kruit , Nalan Liv , Aernout Christiaan Zonnevylle
IPC分类号： H01J37/22 , G01C21/32 , H01J37/28 , G01C21/34
CPC分类号： H01J37/222 , G01C21/32 , G01C21/3484 , H01J37/22 , H01J37/226 , H01J37/228 , H01J37/28 , H01J2237/221 , H01J2237/226 , H01J2237/24475 , H01J2237/2806
摘要： An apparatus for inspecting a sample, is equipped with a charged particle column for producing a focused beam of charged particles to observe or modify the sample, and an optical microscope to observe a region of interest on the sample as is observed by the charged particle beam or vice versa. The apparatus is accommodated with a processing unit adapted and equipped to represent an image as generated with the column and an image as generated with the microscope. The unit is further adapted to perform an alignment procedure mutually correlating a region of interest in one of the images, wherein the alignment procedure involves detecting a change in the optical image as caused by the charged particle beam.

2. 发明授权

US08325321B2 Lithography system, method of heat dissipation and frame 有权
标题翻译：平版印刷系统，散热方法和框架
公开(公告)号：US08325321B2
公开(公告)日：2012-12-04
申请号：US11880833
申请日：2007-07-24
申请人： Pieter Kruit , Michel Pieter Dansberg , Marco Jan-Jaco Wieland
发明人： Pieter Kruit , Michel Pieter Dansberg , Marco Jan-Jaco Wieland
IPC分类号： F28D15/00 , G03B27/42 , G03B27/52 , G03B27/58 , G03B27/62
CPC分类号： G03F7/70875
摘要： The present invention relates to a lithography system for projecting an image or an image pattern on to a target such as a wafer. Energy that is accumulated in the target by the projection of the image or image pattern is removed from said target, such that expansion by local and/or overall heating is limited to a relevant pre-defined value, and wherein such heat removal is realised by the use of a phase transition in a heat absorbing material that is brought into thermal contact with said target. As a further elaboration, such material may be applied in combination with a further material having a superior coefficient of heat transport, and may be incorporated in an emulsion comprising a material having a superior coefficient of heat transfer. Said material may e.g. be adhered to a bottom face of the target, and may also be included in a frame.
摘要翻译：本发明涉及用于将图像或图像图案投影到诸如晶片的靶上的光刻系统。通过图像或图像图案的投影而累积在目标物中的能量从所述目标去除，使得通过局部和/或整体加热的膨胀被限制到相关的预定义值，并且其中这种除热由在与所述靶导致热接触的吸热材料中使用相变。作为进一步的阐述，这种材料可以与具有优异传热系数的另外的材料结合使用，并且可以结合在包含具有优良传热系数的材料的乳液中。所述材料可以例如粘附到目标的底面，并且也可以包括在框架中。

3. 发明申请

US20120211677A1 MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM 有权
标题翻译：多束光束粒子光学系统
公开(公告)号：US20120211677A1
公开(公告)日：2012-08-23
申请号：US13461594
申请日：2012-05-01
申请人： Pieter Kruit , Yanxia Zhang , Matijn J. Van Bruggen , Stijn Willem Herman Karel Steenbrink
发明人： Pieter Kruit , Yanxia Zhang , Matijn J. Van Bruggen , Stijn Willem Herman Karel Steenbrink
IPC分类号： G21K5/10
CPC分类号： H01J37/12 , H01J37/153 , H01J2237/04924 , H01J2237/1205 , H01J2237/121 , H01J2237/317
摘要： The invention relates to a multiple beam charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. In further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total.
摘要翻译：本发明涉及一种多束带电粒子光学系统，其包括具有至少一个具有孔的电极的静电透镜结构，其中由所述孔处的所述电极实现的透镜场的有效尺寸最小化。该系统可以包括发散的带电粒子束部分，其中包括透镜结构。透镜的物理尺寸最终变小，特别是小于1mm，更特别地小于几十微米。在进一步的阐述中，透镜与限流孔结合，相对于所述结构的透镜对准，所述透镜中由所述电流限制孔影响的虚拟孔位于最小化像差总数的最佳位置。

4. 发明授权

US07710009B2 System, method and apparatus for multi-beam lithography including a dispenser cathode for homogeneous electron emission 有权
标题翻译：用于多光束光刻的系统，方法和装置，包括用于均匀电子发射的分配器阴极
公开(公告)号：US07710009B2
公开(公告)日：2010-05-04
申请号：US11650310
申请日：2007-01-05
申请人： Stijn Willem Herman Karel Steenbrink , Pieter Kruit
发明人： Stijn Willem Herman Karel Steenbrink , Pieter Kruit
IPC分类号： H01J19/14 , H01J1/20 , H01J1/14 , H01J1/28
CPC分类号： H01J37/065 , B82Y10/00 , B82Y40/00 , H01J1/28 , H01J37/3177 , H01J2237/3175 , H01J2237/31754 , H01J2237/31774
摘要： A dispenser cathode which comprises an emission surface, a reservoir for material releasing, when heated, work-function-lowering particles, and at least one passage for allowing diffusion of work-function-lowering particles from said reservoir to said emission surface, said emission surface comprising at least one emission area and at least one non-emission area covered with emission-suppressing material and surrounding each emission area, said non-emission area comprising at least one passage connecting said reservoir with said non-emission area and debouching within a diffusion length distance from an emission area for allowing diffusion of work-function-lowering particles from said reservoir to said emission area.
摘要翻译：分配器阴极，其包括排放表面，用于材料释放的储存器，当被加热时，功能降低颗粒和至少一个通道，用于允许功能降低颗粒从所述储存器扩散到所述发射表面，所述发射表面包括至少一个发射区域和至少一个覆盖有发射抑制材料并且围绕每个发射区域的非发射区域，所述非发射区域包括将所述储层与所述非发射区域连接的至少一个通道，并在从放射区域的扩散长度距离，用于允许功能降低颗粒从所述储存器扩散到所述发射区域。

5. 发明申请

US20090212229A1 PROJECTION LENS ARRANGEMENT 有权
标题翻译：投影镜头布置
公开(公告)号：US20090212229A1
公开(公告)日：2009-08-27
申请号：US12393049
申请日：2009-02-26
申请人： Marco Jan Jaco WIELAND , Bert Jan KAMPHERBEEK , Alexander Hendrik VAN VEEN , Pieter KRUIT , Stijn Willem Herman Karel STEENBRINK
发明人： Marco Jan Jaco WIELAND , Bert Jan KAMPHERBEEK , Alexander Hendrik VAN VEEN , Pieter KRUIT , Stijn Willem Herman Karel STEENBRINK
IPC分类号： H01J3/14 , G01J1/00 , A61N5/00
CPC分类号： H01J37/12 , B82Y10/00 , B82Y40/00 , H01J37/3007 , H01J37/3177 , H01J2237/0435 , H01J2237/1205 , H01J2237/121 , H01J2237/151
摘要： A charged particle multi-beamlet system for exposing a target using a plurality of beamlets. The system comprises a first plate having a plurality of holes formed in it, with a plurality of electrostatic projection lens systems formed at the location of each hole so that each electron beamlet passes through a corresponding projection lens system. The holes have sufficiently uniform placement and dimensions to enable focusing of the beamlets onto the surface of the target using a common control voltage. Preferably the electrostatic projection lens systems are controlled by a common electrical signal to focus the electron beamlets on the surface without correction of the focus or path of individual electron beamlets.
摘要翻译：一种用于使用多个子束曝光目标的带电粒子多子束系统。该系统包括在其中形成有多个孔的第一板，形成在每个孔的位置处的多个静电投影透镜系统，使得每个电子束通过相应的投影透镜系统。这些孔具有足够均匀的放置和尺寸以使得能够使用公共控制电压将子束聚焦到靶的表面上。优选地，静电投影透镜系统由公共电信号控制，以将电子束聚焦在表面上，而无需校正各个电子束的聚焦或路径。

6. 发明申请

US20090065711A1 Charged particle beam exposure system 有权
标题翻译：带电粒子束曝光系统
公开(公告)号：US20090065711A1
公开(公告)日：2009-03-12
申请号：US12288877
申请日：2008-10-24
申请人： Pieter Kruit
发明人： Pieter Kruit
IPC分类号： H01J49/00
CPC分类号： H01J37/06 , B82Y10/00 , B82Y40/00 , H01J37/1474 , H01J37/3177 , H01J2237/06316
摘要： A charged particle beam exposure apparatus for transferring a pattern onto a surface of a target, comprising a beam generator comprising a plurality of n changed particle sources, substantially in one plane, each source adapted for generating a charged particle beam, a first aperture array, comprising a plurality of groups of apertures, each group of apertures aligned with one source, for splitting each beam up into a plurality of beamlets m, thus resulting in a total of n×m beamlets, and a deflector array, comprising a plurality of groups of deflectors, each group of deflectors aligned with one source and one group of apertures, each deflector in a group aligned with an aperture of the corresponding group, and each group of deflectors operable for asserting a collimating influence on its corresponding beam.
摘要翻译：一种用于将图案转印到目标表面上的带电粒子束曝光装置，包括基本上在一个平面中的多个n个改变的粒子源的束发生器，每个源适于产生带电粒子束，第一孔径阵列，包括多组孔，每组孔与一个源对准，用于将每个束分成多个子束m，从而导致总共n×m个子束，以及包括多组偏转器的偏转器阵列每组导向器与一个源和一组孔对齐，每个偏转器与组对应的组中的每个偏转器对准，并且每组偏转器可操作以对其对应的光束确定准直影响。

7. 发明申请

US20080073588A1 Lithography system and projection method 有权
标题翻译：光刻系统和投影方法
公开(公告)号：US20080073588A1
公开(公告)日：2008-03-27
申请号：US11716452
申请日：2007-03-09
申请人： Pieter Kruit , Remco Jager , Stijn Willem Steenbrink , Marco Wieland
发明人： Pieter Kruit , Remco Jager , Stijn Willem Steenbrink , Marco Wieland
IPC分类号： H01J37/08
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , G03F7/70291 , G03F7/70383 , G03F7/70508 , H01J37/3026 , H01J37/3174 , H01J2237/31764 , H01J2237/31766 , H01J2237/31771 , H01L21/67282
摘要： The present invention relates a probe forming lithography system for generating an pattern on to a target surface such as a wafer, using a black and white writing strategy, i.e. writing or not writing a grid cell, thereby dividing said pattern over a grid comprising grid cells, said pattern comprising features of a size larger than that of a grid cell, in each of which cells said probe is switched “on” or “off, wherein a probe on said target covers a significantly larger surface area than a grid cell, and wherein within a feature a position dependent distribution of black and white writings is effected within the range of the probe size as well as to a method upon which such system may be based.
摘要翻译：本发明涉及一种探针形成光刻系统，用于使用黑白写入策略（即写入或不写入网格单元）在诸如晶片的目标表面上产生图案，从而在包含网格单元的网格上划分所述图案所述图案包括尺寸大于网格单元的尺寸的特征，在每个单元中，所述探针被切换为“开”或“关”，其中所述目标上的探针覆盖比网格单元大得多的表面积，以及其中在特征内，在探针大小的范围以及这种系统可以基于的方法上实现黑白写入的位置相关分布。

8. 发明申请

US20070262263A1 Particle-optical apparatus equipped with a gas ion source 有权
标题翻译：配备气体离子源的粒子光学仪器
公开(公告)号：US20070262263A1
公开(公告)日：2007-11-15
申请号：US11709303
申请日：2007-02-21
申请人： Pieter Kruit , Vipin Tondare
发明人： Pieter Kruit , Vipin Tondare
IPC分类号： H01J27/02
CPC分类号： H01J27/205 , H01J37/08 , H01J2237/0807 , H01J2237/082
摘要： The invention relates to an electron impact gas ion with high brightness and low energy spread. This high brightness is achieved by injecting electrons in a small ionization volume (from less than 1 μm to several tens of micrometers in size) from one side and extracting ions from the other. The electrons injected are produced by a high brightness electron source, such as a field emitter or a Schottky emitter. In one embodiment of the invention the required high electron density in the ionization volume is realized by placing a field emitter close to the ionization volume (e.g. 30 μm), without optics between source and ionization volume. In another embodiment of the invention the source is imaged onto a MEMS structure. Two small diaphragms of e.g. 50 nm are spaced e.g. 1 μm apart. The electrons enter through one of these diaphragms, while the ions leave the ionization volume through the other one. The two diaphragms are manufactured by e.g. drilling with an ion beam, resulting in two small and well aligned diaphragms.
摘要翻译：本发明涉及具有高亮度和低能量扩散的电子冲击气体离子。这种高亮度通过从一侧注入小的电离体积（从小于1μm到数十微米的尺寸）并从另一侧提取离子来实现。注入的电子通过高亮度电子源产生，例如场发射体或肖特基发射极。在本发明的一个实施方案中，离子化体积中所需的高电子密度通过将场致发射体放置在电离体积（例如30mum）附近，而不需要源和电离体积之间的光学元件来实现。在本发明的另一个实施例中，源被成像到MEMS结构上。两个小的隔膜。 50nm间隔开。 1 mum。电子通过这些隔膜中的一个进入，而离子离开离子化体积通过另一个。两个隔膜由例如，用离子束进行钻孔，产生两个小且良好对准的膜片。

9. 发明授权

US07215070B2 System, method and apparatus for multi-beam lithography including a dispenser cathode for homogeneous electron emission 失效
标题翻译：用于多光束光刻的系统，方法和装置，包括用于均匀电子发射的分配器阴极
公开(公告)号：US07215070B2
公开(公告)日：2007-05-08
申请号：US10778787
申请日：2004-02-13
申请人： Stijn Willem Herman Karel Steenbrink , Pieter Kruit
发明人： Stijn Willem Herman Karel Steenbrink , Pieter Kruit
IPC分类号： H01J19/14 , H01J1/20 , H01J1/14 , H01J1/28
CPC分类号： H01J37/065 , B82Y10/00 , B82Y40/00 , H01J1/28 , H01J37/3177 , H01J2237/3175 , H01J2237/31754 , H01J2237/31774
摘要： A dispenser cathode which comprises an emission surface, a reservoir for material releasing, when heated, work-function-lowering particles, and at least one passage for allowing diffusion of work-function-lowering particles from said reservoir to said emission surface, said emission surface comprising at least one emission area and at least one non-emission area covered with emission-suppressing material and surrounding each emission area, said non-emission area comprising at least one passage connecting said reservoir with said non-emission area and debouching within a diffusion length distance from an emission area for allowing diffusion of work-function-lowering particles from said reservoir to said emission area.
摘要翻译：分配器阴极，其包括排放表面，用于材料释放的储存器，当被加热时，功能降低颗粒和至少一个通道，用于允许功能降低颗粒从所述储存器扩散到所述发射表面，所述发射表面包括至少一个发射区域和至少一个覆盖有发射抑制材料并且围绕每个发射区域的非发射区域，所述非发射区域包括将所述储层与所述非发射区域连接的至少一个通道，并在从放射区域的扩散长度距离，用于允许功能降低颗粒从所述储存器扩散到所述发射区域。

10. 发明申请

US20070057204A1 Lithography system, sensor and measuring method 有权
标题翻译：光刻系统，传感器和测量方法
公开(公告)号：US20070057204A1
公开(公告)日：2007-03-15
申请号：US11521705
申请日：2006-09-14
申请人： Pieter Kruit , Erwin Slot , Tijs Teepen , Marco Jan Wieland , Stijn Willem Karel Steenbrink
发明人： Pieter Kruit , Erwin Slot , Tijs Teepen , Marco Jan Wieland , Stijn Willem Karel Steenbrink
IPC分类号： G21K5/10
CPC分类号： H01J37/3177 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/2443 , H01J2237/2446 , H01J2237/30433 , H01J2237/31757
摘要： Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.
摘要翻译：用于测量带电粒子束系统的大量带电粒子束的特性的光刻系统，传感器和方法，特别是直接写入光刻系统，其中通过使用转换器元件将带电粒子束转换成光束，使用与所述转换器元件成一直线的一系列光敏检测器，例如二极管，CCD或CMOS器件，用于检测所述光束，用所述光束曝光之后，从所述检测器电子地读出所得到的信号，利用所述信号确定一个或多个光束特性的值，从而使用自动电子计算器，以及电子地调整带电粒子系统，以便校正超出所有或多个所述带电粒子束的规格范围值，每一个用于一个或多个属性，基于所述计算的属性值。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式