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1. 发明申请

US20090035945A1 MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US20090035945A1
公开(公告)日：2009-02-05
申请号：US12180514
申请日：2008-07-25
申请人： Kazuyuki FUJII , Minoru Hanazaki , Gen Kawaharada , Masakazu Taki , Mutsumi Tsuda
发明人： Kazuyuki FUJII , Minoru Hanazaki , Gen Kawaharada , Masakazu Taki , Mutsumi Tsuda
IPC分类号： H01L21/30 , C25F5/00
CPC分类号： H01L21/67069 , C23C16/4405 , C23C16/52 , H01J37/32357 , H01J37/32862 , H01J37/32963
摘要： In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.
摘要翻译：在远程等离子体清洗中，由于条件不适合与成膜时不同的等离子体激发，因此难以局部激发等离子体，使用光的方法存在无法避免的检测窗的雾化问题 CVD工艺，不适合大批量生产。为了解决这些问题，本发明的概述是一种半导体集成电路器件的制造方法，其中通过在反应室中使用等离子体激发反应气体来沉积所需的膜的步骤，以及引入在远程等离子体激发室中被激发到反应室中并且在没有等离子体激发的气氛中进行反应室的远程等离子体清洗的清洁气体被重复，其中在反应室中产生局部等离子体或用于抽空反应室的真空系统通过电容耦合型等离子体激发系统，通过监测等离子体的电气特性来检测远程等离子体清洗的终点。

2. 外观设计

USD580437S1 Receiver 有权
标题翻译：接收器
公开(公告)号：USD580437S1
公开(公告)日：2008-11-11
申请号：US29300900
申请日：2008-05-28
申请人： Masaaki Kiyomiya , Kazuyuki Fujii , Yukio Iikura
设计人： Masaaki Kiyomiya , Kazuyuki Fujii , Yukio Iikura

3. 发明申请

US20100087064A1 METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
标题翻译：用于制造半导体集成电路器件的方法和装置
公开(公告)号：US20100087064A1
公开(公告)日：2010-04-08
申请号：US12556027
申请日：2009-09-09
申请人： Kazuyuki FUJII , Toshihiko MINAMI , Hideaki KANAZAWA
发明人： Kazuyuki FUJII , Toshihiko MINAMI , Hideaki KANAZAWA
IPC分类号： H01L21/285
CPC分类号： H01L21/28518 , C23C14/54 , C23C14/564 , H01J37/32935 , H01J37/34 , H01L21/02063 , H01L21/02074 , H01L21/67253 , H01L21/76814 , H01L21/7684 , H01L21/76846
摘要： The present inventors have found that a wafer process of VLSI (Very Large Scale Integration) has the following problem, that is, generation of foreign matters due to moisture from a wafer as a result of degassing when a barrier metal film or a first-level metal interconnect layer is formed by sputtering as a preliminary step for the formation of a tungsten plug in a pre-metal step. To overcome the problem, the present invention provides a manufacturing method of a semiconductor integrated circuit device including, in a plasma process, in-situ monitoring of moisture in a processing chamber by receiving an electromagnetic wave generated from plasma.
摘要翻译：本发明人已经发现，VLSI（超大规模集成）的晶片工艺具有以下问题，即，当阻挡金属膜或第一级别的隔离金属膜或第一级由于脱气而产生由于来自晶片的水分导致的异物通过溅射形成金属互连层，作为在金属前步骤中形成钨丝塞的预备步骤。为了克服这个问题，本发明提供一种半导体集成电路器件的制造方法，其包括在等离子体工艺中，通过接收由等离子体产生的电磁波来对处理室中的水分进行现场监测。

4. 发明授权

US08338298B2 Method and apparatus for manufacturing semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法及装置
公开(公告)号：US08338298B2
公开(公告)日：2012-12-25
申请号：US12556027
申请日：2009-09-09
申请人： Kazuyuki Fujii , Toshihiko Minami , Hideaki Kanazawa
发明人： Kazuyuki Fujii , Toshihiko Minami , Hideaki Kanazawa
IPC分类号： H01L21/285
CPC分类号： H01L21/28518 , C23C14/54 , C23C14/564 , H01J37/32935 , H01J37/34 , H01L21/02063 , H01L21/02074 , H01L21/67253 , H01L21/76814 , H01L21/7684 , H01L21/76846
摘要： The present inventors have found that a wafer process of VLSI (Very Large Scale Integration) has the following problem, that is, generation of foreign matters due to moisture from a wafer as a result of degassing when a barrier metal film or a first-level metal interconnect layer is formed by sputtering as a preliminary step for the formation of a tungsten plug in a pre-metal step. To overcome the problem, the present invention provides a manufacturing method of a semiconductor integrated circuit device including, in a plasma process, in-situ monitoring of moisture in a processing chamber by receiving an electromagnetic wave generated from plasma.
摘要翻译：本发明人已经发现，VLSI（超大规模集成）的晶片工艺具有以下问题，即，当阻挡金属膜或第一级别的隔离金属膜或第一级由于脱气而产生由于来自晶片的水分导致的异物通过溅射形成金属互连层，作为在金属前步骤中形成钨丝塞的预备步骤。为了克服这个问题，本发明提供一种半导体集成电路器件的制造方法，其包括在等离子体工艺中，通过接收由等离子体产生的电磁波来对处理室中的水分进行现场监测。

5. 外观设计

USD580436S1 Transmitter 有权
标题翻译：发射机
公开(公告)号：USD580436S1
公开(公告)日：2008-11-11
申请号：US29300899
申请日：2008-05-28
申请人： Masaaki Kiyomiya , Kazuyuki Fujii , Yukio Iikura
设计人： Masaaki Kiyomiya , Kazuyuki Fujii , Yukio Iikura

6. 发明授权

US06852655B2 Dielectric ceramic 失效
标题翻译：电介质陶瓷
公开(公告)号：US06852655B2
公开(公告)日：2005-02-08
申请号：US10354074
申请日：2003-01-30
申请人： Eiji Kodera , Kazuyuki Fujii , Makoto Baba , Hidetoshi Mizutani , Manabu Sato
发明人： Eiji Kodera , Kazuyuki Fujii , Makoto Baba , Hidetoshi Mizutani , Manabu Sato
IPC分类号： C03C8/04 , C03C8/14 , H05K1/03 , C03C1/00
CPC分类号： C03C8/14 , C03C8/04 , H05K1/0306
摘要： The invention is to offer such a dielectric ceramic enabling to simultaneously sinter with the low resistant conductor of Ag based metals and Cu based metals, having the excellent mechanical strength and exhibiting the excellent dielectric characteristics in the GHz zone. Mixed powders of Si: 20 to 30 weight %, B: 5 to 30 weight %, Al: 20 to 30 weight %, Ca: 10 to 20 weight %, and Zn: 10 to 20 weight % are prepared, melted, and rapidly cooled to produce glass frits. The glass frits are granulated and mixed with gahnite filler and titania filler which are inorganic filler powders. Subsequently, a binder is thrown into the powders to produce a composition of dielectric ceramic, and then is formed, followed by sintering. The mixed powders may contain at least one kind of alkali metal of Li, K and Na.
摘要翻译：本发明提供一种这样的电介质陶瓷，能够与Ag基金属和Cu基金属的低电阻导体同时烧结，具有优异的机械强度并且在GHz区域表现出优异的介电特性。混合粉末Si：20〜30重量％，B：5〜30重量％，Al：20〜30重量％，Ca：10〜20重量％，Zn：10〜20重量％冷却生产玻璃料。将玻璃料与粒状填料和作为无机填料粉末的二氧化钛填料混合。随后，将粘合剂投入到粉末中以产生电介质陶瓷的组合物，然后形成，随后烧结。混合粉末可含有至少一种Li，K和Na的碱金属。

7. 发明授权

US07815958B2 Carotenoids color emulsion preparation 有权
标题翻译：类胡萝卜素彩色乳液制剂
公开(公告)号：US07815958B2
公开(公告)日：2010-10-19
申请号：US11984202
申请日：2007-11-14
申请人： Kazuyuki Fujii , Norihiko Inada
发明人： Kazuyuki Fujii , Norihiko Inada
IPC分类号： A23L1/27
CPC分类号： A61K8/31 , A23L5/44 , A61K8/06 , A61K2800/43 , A61Q19/00
摘要： The present invention provides a carotenoids color preparation which itself has a high emulsion stability, so that there are no problems such as precipitation of an insoluble matter or neck ring formation even when this preparation is used in water-based products. The preparation is obtained by emulsifying a carotenoids color of natural origin, which has an acid value of 10 or less and an acetone-insoluble content of 5 wt % or less when adjusted so that the color value E10%1cm is 2550.
摘要翻译：本发明提供了一种本身具有高乳化稳定性的类胡萝卜素着色剂，即使在将该制剂用于水性产品时也不存在不溶物的沉淀或颈环形成等问题。通过调节天然来源的类胡萝卜素颜色，其值为10以下，丙酮不溶成分为5重量％以下，使得颜色值E10％1cm为2550，可以得到该制剂。

8. 发明授权

US07790478B2 Manufacturing method of semiconductor integrated circuit device 失效
标题翻译：半导体集成电路器件的制造方法
公开(公告)号：US07790478B2
公开(公告)日：2010-09-07
申请号：US12180514
申请日：2008-07-25
申请人： Kazuyuki Fujii , Minoru Hanazaki , Gen Kawaharada , Masakazu Taki , Mutsumi Tsuda
发明人： Kazuyuki Fujii , Minoru Hanazaki , Gen Kawaharada , Masakazu Taki , Mutsumi Tsuda
IPC分类号： H01L21/66
CPC分类号： H01L21/67069 , C23C16/4405 , C23C16/52 , H01J37/32357 , H01J37/32862 , H01J37/32963
摘要： In remote plasma cleaning, it is difficult to locally excite a plasma because the condition is not suitable for plasma excitation different from that at the time of film formation and a method using light has a problem of fogginess of a detection window that cannot be avoided in a CVD process and is not suitable for a mass production process. In order to solve these problems, the outline of the present invention is a manufacturing method of a semiconductor integrated circuit device in which a step of depositing a desired film by exciting a reaction gas using a plasma in a reaction chamber and a step of introducing a cleaning gas excited in a remote plasma excitation chamber into the reaction chamber and performing remote plasma cleaning of the reaction chamber in an atmosphere without plasma excitation are repeated, wherein a local plasma is generated in the reaction chamber or a vacuum system for evacuating the reaction chamber by a plasma excitation system of capacitively coupled type and the end point of the remote plasma cleaning is detected by monitoring the electrical characteristic of the plasma.
摘要翻译：在远程等离子体清洗中，由于条件不适合与成膜时不同的等离子体激发，因此难以局部激发等离子体，使用光的方法存在无法避免的检测窗的雾化问题 CVD工艺，不适合大批量生产。为了解决这些问题，本发明的概述是一种半导体集成电路器件的制造方法，其中通过在反应室中使用等离子体激发反应气体来沉积所需的膜的步骤，以及引入在远程等离子体激发室中被激发到反应室中并且在没有等离子体激发的气氛中进行反应室的远程等离子体清洗的清洁气体被重复，其中在反应室中产生局部等离子体或用于抽空反应室的真空系统通过电容耦合型等离子体激发系统，通过监测等离子体的电气特性来检测远程等离子体清洗的终点。

9. 发明授权

US06213852B1 Polishing apparatus and method of manufacturing a semiconductor device using the same 失效
标题翻译：抛光装置及其制造方法
公开(公告)号：US06213852B1
公开(公告)日：2001-04-10
申请号：US09350920
申请日：1999-07-12
申请人： Kazuyuki Fujii , Takanori Sasaki , Mahito Sawada , Kouichiro Tsutahara
发明人： Kazuyuki Fujii , Takanori Sasaki , Mahito Sawada , Kouichiro Tsutahara
IPC分类号： B24B2900
CPC分类号： B24B37/04 , B24B57/02
摘要： A method of manufacturing a semiconductor device using a polishing apparatus is provided. A top ring holding a wafer is arranged on a pad. A polishing chemical liquid supply line for supplying a polishing chemical liquid is arranged above the pad in a direction ahead of rotation with respect to the top ring. Around the center of rotation of the pad, a partition plate having a columnar side surface is arranged. Above the pad on a side which goes away from the top ring when the pad is rotated, a polishing chemical liquid draining mechanism is arranged extending continuously from the partition plate to the outer periphery of the pad. Accordingly, a polishing apparatus is obtained by which the amount of polishing of the surface to be polished of the semiconductor substrate is stabilized and generation of microscratches on the surface to be polished can be suppressed.
摘要翻译：提供了使用抛光装置制造半导体器件的方法。保持晶片的顶环布置在垫上。用于供给研磨用化学液的研磨用药液供给配线相对于上述环设置在相对于上述旋转方向的方向上。围绕垫的旋转中心，布置有具有柱状侧表面的隔板。在衬垫旋转时离开顶环的一侧的衬垫上方，抛光化学液排放机构被布置成从隔板连续延伸到衬垫的外周。因此，可以获得能够稳定半导体基板的被研磨面的研磨量并且能够抑制待研磨面的微细化的研磨装置。

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