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1. 发明授权

US09583314B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US09583314B2
公开(公告)日：2017-02-28
申请号：US14846739
申请日：2015-09-05
申请人： Hitachi High-Technologies Corporation
发明人： Hitoshi Tamura
IPC分类号： H01J7/24 , H01J37/32 , H01J37/02 , H01P5/103
CPC分类号： H01J37/32229 , H01J37/02 , H01J37/32256 , H01J37/32293 , H01J37/32311 , H01P5/103
摘要： Provided is a plasma processing apparatus including: a circular waveguide connected with a vacuum vessel, and through which a circularly polarized wave of an electric field for plasma formation propagates; a processing chamber which is arranged below the circular waveguide, and in which plasma is formed; a circularly polarized wave generator, which is arranged in the waveguide; a circularly polarized wave adjuster which is connected with the circular waveguide below the circularly polarized wave generator; a circularly polarized wave detector which is below the circularly polarized wave adjuster; and a controller which adjusts an operation of the circularly polarized wave adjuster according to an output from the circularly polarized wave detector, in which the circularly polarized wave adjuster adjusts a length of a protrusion of a dielectric stub into the circular waveguide based on a signal from the controller.
摘要翻译：提供一种等离子体处理装置，包括：与真空容器连接的圆形波导，用于等离子体生成的电场的圆极化波通过该波导传播; 处理室，其设置在所述圆形波导的下方，形成有等离子体; 圆偏振波发生器，布置在波导中; 圆偏振波调节器，与圆偏振波发生器下方的圆形波导连接; 在圆偏振波调节器下面的圆偏振波检测器; 以及根据圆偏振波检测器的输出调节圆偏振波调节器的操作的控制器，其中圆偏振波调节器基于来自圆偏振波检测器的信号将电介质短截线的突起的长度调节到圆形波导中控制器。

2. 发明申请

US20170040145A1 A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：用于制造合成金刚石材料的微波等离子体反应器
公开(公告)号：US20170040145A1
公开(公告)日：2017-02-09
申请号：US15304366
申请日：2015-06-10
申请人： ELEMENT SIX TECHNOLOGIES LIMITED
发明人： JOHN ROBERT BRANDON , IAN FRIEL , MICHAEL ANDREW COOPER , GEOFFREY ALAN SCARSBROOK , BEN LLEWLYN GREEN
IPC分类号： H01J37/32 , C23C16/511 , C30B29/04 , C30B25/10 , C30B25/20 , C23C16/27 , C23C16/458
CPC分类号： H01J37/32201 , C23C16/274 , C23C16/458 , C23C16/511 , C30B25/105 , C30B25/205 , C30B29/04 , H01J37/32192 , H01J37/3222 , H01J37/32247 , H01J37/32284 , H01J37/32293 , H01J37/32302 , H01J37/3244 , H01J37/32715 , H01J2237/3321 , H01J2237/3323
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室，其限定用于支撑具有初级微波谐振模式频率f的初级微波谐振模式的谐振腔; 耦合到等离子体室的多个微波源，用于产生并馈送具有总微波功率Pτ的微波进入等离子体室; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 以及衬底保持器，其设置在所述等离子体室中并且包括用于支撑在其上沉积所述合成金刚石材料的衬底的支撑表面，其中所述多个微波源被配置为耦合所述总微波功率的至少30％ Pτ以初级微波共振模式频率f进入等离子体室，并且其中多个微波源中的至少一些是固态微波源。

3. 发明授权

US06911617B2 Plasma device and plasma generating method 失效
标题翻译：等离子体装置和等离子体生成方法
公开(公告)号：US06911617B2
公开(公告)日：2005-06-28
申请号：US10466306
申请日：2002-01-18
申请人： Nobuo Ishii , Makoto Ando
发明人： Nobuo Ishii , Makoto Ando
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/3222 , H01J37/32192 , H01J37/32293
摘要： A desired component of an electromagnetic field in a slot antenna is selectively taken to be supplied into a vessel for generating a plasma. The angle of inclination of slots (36) relative to the circumferential direction of a radiation surface (31) of the slot antenna (30) is decreased as the position of the slots approaches the periphery of the radiation surface 31 from the center O of the radiation surface.
摘要翻译：选择性地将缝隙天线中的电磁场的期望分量提供到用于产生等离子体的容器中。狭槽天线（30）的辐射表面（31）相对于圆周方向的倾斜角度随着狭缝的位置从辐射面31的中心O接近辐射表面31的周边而减小辐射面。

4. 发明授权

US06444137B1 Method for processing substrates using gaseous silicon scavenger 失效
标题翻译：使用气态硅清除剂处理衬底的方法
公开(公告)号：US06444137B1
公开(公告)日：2002-09-03
申请号：US08673972
申请日：1996-07-01
申请人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel
发明人： Kenneth S. Collins , Chan-Lon Yang , Jerry Yuen-Kui Wong , Jeffrey Marks , Peter R. Keswick , David W. Groechel
IPC分类号： C23F100
CPC分类号： H01J37/32871 , C23C16/402 , C23C16/509 , C23C16/517 , H01F2029/143 , H01J37/32082 , H01J37/32091 , H01J37/321 , H01J37/3211 , H01J37/32146 , H01J37/32165 , H01J37/32174 , H01J37/3222 , H01J37/32293 , H01J37/32458 , H01J37/32522 , H01J37/3266 , H01J37/32688 , H01J37/32706 , H01J2237/334 , H01L21/31116 , H01L21/6831
摘要： A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.
摘要翻译：等离子体反应室使用由RF能量（LF，MF或VHF）驱动的天线，其被感应耦合在反应堆穹顶内。天线在室内产生高密度，低能量的等离子体，用于以高选择性蚀刻覆盖在非含氧层上的含氧层。施加到晶片支撑阴极的辅助RF偏置能量控制阴极护套电压并且独立于密度来控制离子能量。公开了各种磁和电压处理增强技术，以及其它蚀刻工艺，沉积工艺和组合蚀刻/沉积工艺。所公开的发明提供敏感设备的处理而不损坏和不加载，从而提高产量。可以以高选择性实现覆盖非含氧层的含氧层的蚀刻。

5. 发明授权

US5250328A Process and apparatus for plasma CVD coating or plasma treating substrates 失效
标题翻译：等离子体CVD涂层或等离子体处理基板的工艺和装置
公开(公告)号：US5250328A
公开(公告)日：1993-10-05
申请号：US875763
申请日：1992-04-29
申请人： Jurgen Otto
发明人： Jurgen Otto
IPC分类号： C23C16/50 , C23C4/00 , C23C16/511 , H01J37/32 , H01L21/31 , B05D3/06 , B05D3/02
CPC分类号： H01J37/32229 , C23C16/511 , H01J37/32192 , H01J37/32293
摘要： To provide large-surface substrates economically and in a short time, with coatings which are to be more impenetrable and more homogeneous than conventionally produced coatings, a plasma CVD process is employed in which a reaction gas capable of depositing a coating material therefrom flows over the surface to be coated and the reaction gas is excited into a band-shaped plasma by microwaves fed from two microwave feeds, in a device comprising end walls (2, 3) and a waveguide (1) with a square cross-section in which two standing waves polarized perpendicular to one another are excited and are shifted relative to one another by one-quarter wavelength, the coupling of the microwaves to the plasma being performed by a lengthwise slit (6) made in one of the edges of waveguide (1), with two crossed microwave polarizers (4, 5) being positioned in waveguide (1), such that each polarizer can be penetrated by the microwaves from the feed (7, 8) adjacent thereto and cannot be penetrated by the microwaves from the feed (7, 8) not proximate thereto, with the distance between an end wall (2, 3 ) and the polarizer (4, 5) proximate thereto being selected so as to form standing waves.
摘要翻译：为了在经济上和短时间内提供大表面基材，使用比常规制备的涂层更难以穿透和更均匀的涂层，采用等离子体CVD方法，其中能够沉积涂层材料的反应气体流过待包被的表面，并且通过从两个微波进料馈送的微波将反应气体激发到带状等离子体中，在包括端壁（2,3）和具有正方形横截面的波导（1）的装置中，其中两个被相互垂直偏振的驻波被激发并且相对于彼此相移四分之一波长，微波与等离子体的耦合由在波导（1）的一个边缘中制成的纵向狭缝（6）进行，，两个交叉的微波偏振器（4,5）位于波导（1）中，使得每个偏振器可以被来自与其相邻的进给（7,8）的微波穿透，并且不能被mi 来自不靠近其的进料（7,8）的开口，其中选择端壁（2,3）和邻近其的偏振器（4,5）之间的距离以形成驻波。

6. 发明授权

US5111111A Method and apparatus for coupling a microwave source in an electron cyclotron resonance system 失效
标题翻译：用于在电子回旋共振系统中耦合微波源的方法和装置
公开(公告)号：US5111111A
公开(公告)日：1992-05-05
申请号：US589078
申请日：1990-09-27
申请人： James E. Stevens , Joseph L. Cecchi , Patrick L. Colestock
发明人： James E. Stevens , Joseph L. Cecchi , Patrick L. Colestock
IPC分类号： H01J37/32 , H05H7/02
CPC分类号： H01J37/32238 , H01J37/32192 , H01J37/32284 , H01J37/32293 , H01J37/32678 , H05H7/02
摘要： A microwave source is coupled to an electron cyclotron resonance (ECR) system by circularly polarizing the microwave energy from the source in an angular direction with cooperates with the ECR system's magnetic field to produce electron cyclotron resonance, and coupling the circularly polarized microwave energy to the plasma using a quarter wave vacuum window transformer having a dielectric constant which matches the impedance of the circularly polarized microwave energy to the impedance of the plasma. The impedance matching transformer is preferably a vacuum window of the ECR chamber having quarter wave thickness and the appropriate dielectric constant. For high density plasmas in a standard ECR system of 6 cm radius an alumina window 0.98 cm thick procides optimum coupling. The reflected power from the plasma is thereby minimized to provide a dense plasma for the ECR tool while reducing or eliminating the need for manual external tuners for the microwave source.
摘要翻译：微波源耦合到电子回旋共振（ECR）系统，通过与ECR系统的磁场配合来使来自源的微波能量在角度方向上圆偏振以产生电子回旋共振，并将圆偏振的微波能量耦合到使用具有与圆偏振微波能量的阻抗匹配等离子体的阻抗的介电常数的四分之一波真空窗变压器的等离子体。阻抗匹配变压器优选地是具有四分之一波长厚度和适当介电常数的ECR室的真空窗。对于6厘米半径的标准ECR系统中的高密度等离子体，氧化铝窗口0.98厘米厚可以实现最佳耦合。因此，来自等离子体的反射功率被最小化以为ECR工具提供致密的等离子体，同时减少或消除对用于微波源的手动外部调谐器的需要。

7. 发明授权

US4877509A Semiconductor wafer treating apparatus utilizing a plasma 失效
标题翻译：利用等离子体的半导体晶片处理装置
公开(公告)号：US4877509A
公开(公告)日：1989-10-31
申请号：US269688
申请日：1988-11-10
申请人： Toshiaki Ogawa , Nobuo Fujiwara , Kenji Kawai , Teruo Shibano , Hiroshi Morita , Kyusaku Nishioka
发明人： Toshiaki Ogawa , Nobuo Fujiwara , Kenji Kawai , Teruo Shibano , Hiroshi Morita , Kyusaku Nishioka
IPC分类号： H01L21/302 , C23C16/511 , H01J37/32 , H01L21/205 , H01L21/3065 , H01L21/31
CPC分类号： H01J37/32293 , C23C16/511 , H01J37/32192 , H01J37/32678
摘要： An apparatus for treating semiconductor wafers utilizing a plasma generated by electron cyclotron resonance (ECR) is disclosed in which a microwave is supplied to a plasma generating chamber via a rectangular waveguide, a rectangular-to-circular microwave converter, and a circular polarization converter. The polarization converter may comprise a phase shift plate of a dielectric material or an electrically conductive material disposed in a circular waveguide in the form of a metallic cylinder. The polarization converter transforms a circular TE.sub.11 mode microwave supplied from the rectangular-to-circular microwave converter to a circularly polarized one by rotating the direction of the electric field of the microwave in the TE.sub.11 mode one complete turn in one period of the microwave. Thus, the electric field strength of the microwave supplied to the plasma generating chamber is averaged over the time along the circumferential direction in the plasma generating chamber to make the density of plasma generation therein spatially uniform. The spatially uniformly distributed plasma generated in the plasma generating chamber is conveyed to the wafer in the wafer treating chamber to effect a treatment of the wafer.
摘要翻译：公开了一种利用电子回旋共振（ECR）产生的等离子体处理半导体晶片的装置，其中通过矩形波导，矩形到圆形微波转换器和圆偏振转换器将微波提供给等离子体发生室。偏振转换器可以包括介电材料的相移板或设置在金属圆筒形状的圆形波导中的导电材料。在微波的一个周期内，通过在TE11模式一周内旋转微波的电场方向，将由矩形到圆形的微波转换器提供的循环TE11模式的微波变换成圆偏振的微波。因此，供给到等离子体发生室的微波的电场强度在等离子体发生室中沿着圆周方向的时间平均化，使得其中等离子体产生的密度在空间上均匀。在等离子体发生室中产生的空间均匀分布的等离子体被输送到晶片处理室中的晶片，以对晶片进行处理。

8. 发明授权

US09972476B2 Film forming device, film forming method, and film forming program 有权
公开(公告)号：US09972476B2
公开(公告)日：2018-05-15
申请号：US14862722
申请日：2015-09-23
申请人： BROTHER KOGYO KABUSHIKI KAISHA , NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
发明人： Kazunari Taki , Kentaro Shinoda , Hideki Kanada , Hiroyuki Kousaka , Yasuyuki Takaoka
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/511 , C23C16/52 , H05H1/46 , C23C16/26
CPC分类号： H01J37/32293 , C23C16/26 , C23C16/511 , C23C16/52 , H01J37/32266 , H01J2237/3321 , H05H1/46 , H05H2001/463
摘要： A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes.

9. 发明申请

US20160032450A1 METHOD FOR A DIAMOND VAPOR DEPOSITION 审中-公开
标题翻译：金刚石蒸气沉积方法
公开(公告)号：US20160032450A1
公开(公告)日：2016-02-04
申请号：US14779488
申请日：2014-02-25
申请人： NEOCOAT SA
发明人： David Rats , Christophe Provent
IPC分类号： C23C16/27 , B81C1/00 , H01L21/02 , H01J37/32 , C01B31/06
CPC分类号： C23C16/274 , B81C1/00373 , C01B32/25 , C23C16/045 , C23C16/511 , H01J37/32192 , H01J37/32201 , H01J37/32293 , H01J37/32403 , H01J37/32678 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01L21/02115 , H01L21/02274
摘要： The present invention relates to a method for depositing nanocrystalline diamond using a diamond vapor deposition facility which includes: a vacuum reactor including a reaction chamber connected to a vacuum source; a plurality of plasma sources arranged along a matrix that is at least two-dimensional in the reaction chamber; and a substrate holder arranged in the reactor, said method being characterized in that the deposition is carried out at a temperature of 100 to 500° C.
摘要翻译：本发明涉及使用金刚石气相沉积设备沉积纳米晶金刚石的方法，该方法包括：真空反应器，包括连接到真空源的反应室; 沿反应室中至少二维的矩阵排列的多个等离子体源; 以及布置在反应器中的衬底保持器，所述方法的特征在于沉积在100-500℃的温度下进行。

10. 发明申请

US20160013023A1 FILM FORMING DEVICE, FILM FORMING METHOD, AND FILM FORMING PROGRAM 有权
标题翻译：电影制作装置，电影制作方法和电影制作程序
公开(公告)号：US20160013023A1
公开(公告)日：2016-01-14
申请号：US14862722
申请日：2015-09-23
申请人： BROTHER KOGYO KABUSHIKI KAISHA , NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
发明人： Kazunari TAKI , Kentaro SHINODA , Hideki KANADA , Hiroyuki KOUSAKA , Yasuyuki TAKAOKA
IPC分类号： H01J37/32 , C23C16/511 , C23C16/52 , C23C16/26
CPC分类号： H01J37/32293 , C23C16/26 , C23C16/511 , C23C16/52 , H01J37/32266 , H01J2237/3321 , H05H1/46 , H05H2001/463
摘要： A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes
摘要翻译：一种成膜装置，包括：微波供应单元，被配置为沿导电工件的处理表面供应用于产生等离子体的微波; 负电压施加单元，被配置为向工件施加用于沿着工件的处理表面扩展鞘层厚度的负偏压，以及控制器，其被配置为控制微波供给单元和负电压施加单元，其中，微波供应单元具有微波传输窗口，其被配置为将所提供的微波传播到扩展的鞘层，其中控制器被配置为在供应微波的同时控制微波供应单元和负电压施加单元，使得鞘层的护套厚度改变

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