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1. 发明授权

US12009180B2 Plasma processing apparatus 有权
公开(公告)号：US12009180B2
公开(公告)日：2024-06-11
申请号：US17435509
申请日：2020-08-27
申请人： Hitachi High-Tech Corporation
发明人： Norihiko Ikeda , Kazuya Yamada
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J37/32128 , H01J37/32146 , H01J37/32201 , H01J37/32293 , H01J37/32311 , H01J2237/3343
摘要： A plasma processing apparatus includes: a processing chamber; a first radio frequency power supply configured to supply a first radio frequency power; a second radio frequency power supply configured to supply a second radio frequency power; and a control device configured to, when the first radio frequency power is modulated by a first waveform having a first period and a second period adjacent to the first period, and the second radio frequency power supply is modulated by a second waveform having a period A and a period B, control the second radio frequency power supply such that each second radio frequency power in the period A is supplied in the first period and the second period, in which an amplitude in the second period is smaller than an amplitude in the first period, and an amplitude in the period A is larger than an amplitude in the period B.

2. 发明授权

US09972476B2 Film forming device, film forming method, and film forming program 有权
公开(公告)号：US09972476B2
公开(公告)日：2018-05-15
申请号：US14862722
申请日：2015-09-23
申请人： BROTHER KOGYO KABUSHIKI KAISHA , NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
发明人： Kazunari Taki , Kentaro Shinoda , Hideki Kanada , Hiroyuki Kousaka , Yasuyuki Takaoka
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/511 , C23C16/52 , H05H1/46 , C23C16/26
CPC分类号： H01J37/32293 , C23C16/26 , C23C16/511 , C23C16/52 , H01J37/32266 , H01J2237/3321 , H05H1/46 , H05H2001/463
摘要： A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes.

3. 发明申请

US20160032450A1 METHOD FOR A DIAMOND VAPOR DEPOSITION 审中-公开
标题翻译：金刚石蒸气沉积方法
公开(公告)号：US20160032450A1
公开(公告)日：2016-02-04
申请号：US14779488
申请日：2014-02-25
申请人： NEOCOAT SA
发明人： David Rats , Christophe Provent
IPC分类号： C23C16/27 , B81C1/00 , H01L21/02 , H01J37/32 , C01B31/06
CPC分类号： C23C16/274 , B81C1/00373 , C01B32/25 , C23C16/045 , C23C16/511 , H01J37/32192 , H01J37/32201 , H01J37/32293 , H01J37/32403 , H01J37/32678 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01L21/02115 , H01L21/02274
摘要： The present invention relates to a method for depositing nanocrystalline diamond using a diamond vapor deposition facility which includes: a vacuum reactor including a reaction chamber connected to a vacuum source; a plurality of plasma sources arranged along a matrix that is at least two-dimensional in the reaction chamber; and a substrate holder arranged in the reactor, said method being characterized in that the deposition is carried out at a temperature of 100 to 500° C.
摘要翻译：本发明涉及使用金刚石气相沉积设备沉积纳米晶金刚石的方法，该方法包括：真空反应器，包括连接到真空源的反应室; 沿反应室中至少二维的矩阵排列的多个等离子体源; 以及布置在反应器中的衬底保持器，所述方法的特征在于沉积在100-500℃的温度下进行。

4. 发明申请

US20160013023A1 FILM FORMING DEVICE, FILM FORMING METHOD, AND FILM FORMING PROGRAM 有权
标题翻译：电影制作装置，电影制作方法和电影制作程序
公开(公告)号：US20160013023A1
公开(公告)日：2016-01-14
申请号：US14862722
申请日：2015-09-23
申请人： BROTHER KOGYO KABUSHIKI KAISHA , NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
发明人： Kazunari TAKI , Kentaro SHINODA , Hideki KANADA , Hiroyuki KOUSAKA , Yasuyuki TAKAOKA
IPC分类号： H01J37/32 , C23C16/511 , C23C16/52 , C23C16/26
CPC分类号： H01J37/32293 , C23C16/26 , C23C16/511 , C23C16/52 , H01J37/32266 , H01J2237/3321 , H05H1/46 , H05H2001/463
摘要： A film forming device includes: a microwave supplying unit configured to supply microwaves for generating plasma along a treatment surface of a conductive workpiece; a negative voltage applying unit configured to apply to the workpiece a negative bias voltage for expanding a sheath layer thickness along the treatment surface of the workpiece, and a controller configured to control the microwave supplying unit and the negative voltage applying unit, wherein the microwave supplying unit has a microwave transmitting window configured to propagate the supplied microwaves to the expanded sheath layer, wherein the controller is configured to control the microwave supplying unit and the negative voltage applying unit while supplying of the microwaves so that a sheath thickness of the sheath layer changes
摘要翻译：一种成膜装置，包括：微波供应单元，被配置为沿导电工件的处理表面供应用于产生等离子体的微波; 负电压施加单元，被配置为向工件施加用于沿着工件的处理表面扩展鞘层厚度的负偏压，以及控制器，其被配置为控制微波供给单元和负电压施加单元，其中，微波供应单元具有微波传输窗口，其被配置为将所提供的微波传播到扩展的鞘层，其中控制器被配置为在供应微波的同时控制微波供应单元和负电压施加单元，使得鞘层的护套厚度改变

5. 发明申请

US20140283747A1 PLASMA PROCESSING APPARATUS AND SHOWER PLATE 有权
标题翻译：等离子体加工设备和淋浴板
公开(公告)号：US20140283747A1
公开(公告)日：2014-09-25
申请号：US14219360
申请日：2014-03-19
申请人： Tokyo Electron Limited
发明人： Shigeru Kasai , Taro Ikeda , Yutaka Fujino
IPC分类号： C23C16/44 , B05B1/00
CPC分类号： C23C16/4401 , B05B1/005 , B05B1/14 , C23C16/452 , H01J37/32192 , H01J37/32293 , H01J37/3244
摘要： A plasma processing apparatus including a processing vessel 10 in which a plasma process is performed and a plasma generation antenna 20 having a shower plate 100 which supplies a first gas and a second gas into the processing vessel 10, performs the plasma process on a substrate with plasma generated by a surface wave formed on a surface of the shower plate 100 through a supply of a microwave. The shower plate 100 has multiple gas holes 133 configured to supply the first gas into the processing vessel 10 and multiple supply nozzles 160 configured to supply the second gas into the processing vessel 10, and the supply nozzles 160 are protruded vertically downwards from a bottom surface of the shower plate 100 and are provided at different positions from the gas holes 133.
摘要翻译：一种等离子体处理装置，包括其中执行等离子体处理的处理容器10和具有向处理容器10供应第一气体和第二气体的喷淋板100的等离子体生成天线20，在基板上进行等离子体处理由通过微波供给在淋浴板100的表面上形成的表面波产生的等离子体。淋浴板100具有多个气孔133，其被配置为将第一气体供应到处理容器10中，并且多个供给喷嘴160构造成将第二气体供应到处理容器10中，并且供给喷嘴160从底表面垂直向下突出并且设置在与气孔133不同的位置。

6. 发明申请

US20130187544A1 METHOD AND APPARATUS FOR GENERATING PLASMA PULSES 有权
标题翻译：用于产生等离子体脉冲的方法和装置
公开(公告)号：US20130187544A1
公开(公告)日：2013-07-25
申请号：US13746784
申请日：2013-01-22
申请人： Forschungsverbund Berlin e.V.
发明人： Roland GESCHE
IPC分类号： H05H1/46
CPC分类号： H01J37/32293 , H01J37/3222 , H01J2237/327 , H05H1/46 , H05H1/48
摘要： A method for generating plasma pulses in which at least two sources are furnished with at least one time function, wherein each of the at least two sources radiates an electromagnetic field generated by one of the time functions, and the at least one time function and the at least two sources cooperate in such a manner that at least one predetermined field strength is realized sequentially in a temporal succession in at least two predetermined space-time points. An alternative method provides at least one source and at least one reflection element for realizing the predetermined field strength. The apparatus for generating plasma pulses comprises at least two sources and at least one data processing device or at least one source, at least one reflection element and at least one data processing device and is configured in such a manner that a method for generating plasma pulses can be executed.
摘要翻译：一种用于产生等离子体脉冲的方法，其中至少两个源具有至少一个时间函数，其中所述至少两个源中的每个源辐射由所述时间函数之一产生的电磁场，并且所述至少一个时间函数和至少两个源以这样的方式协作，使得在至少两个预定时空点中以时间依次顺序地实现至少一个预定场强。替代方法提供至少一个源和至少一个用于实现预定场强的反射元件。用于产生等离子体脉冲的装置包括至少两个源和至少一个数据处理装置或至少一个源，至少一个反射元件和至少一个数据处理装置，并且被配置为使得产生等离子体脉冲的方法可以执行。

7. 发明申请

US20120299671A1 ELECTROMAGNETIC-RADIATION POWER-SUPPLY MECHANISM AND MICROWAVE INTRODUCTION MECHANISM 有权
标题翻译：电磁辐射供电机制与微波介绍机理
公开(公告)号：US20120299671A1
公开(公告)日：2012-11-29
申请号：US13551122
申请日：2012-07-17
申请人： Taro IKEDA , Yuki OSADA , Shigeru KASAI
发明人： Taro IKEDA , Yuki OSADA , Shigeru KASAI
IPC分类号： H01P1/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211 , H01J37/3222 , H01J37/32229 , H01J37/32293 , H01J37/32311 , H01Q15/0006 , H05H2001/4622 , H05H2001/463
摘要： An electromagnetic-radiation power-supply mechanism includes a microwave power introduction port provided on the side of the coaxial waveguide, a power line being connected to the microwave power introduction port; and a power supply antenna for radiating the electromagnetic wave power into the waveguide, the power supply antenna being connected to the power line. The power supply antenna includes an antenna body having a first pole connected to the power line and a second pole connected to an inner conductor of the waveguide; and a ring-shaped reflection portion extending from opposite sides of the antenna body.
摘要翻译：电磁辐射供电机构包括设置在同轴波导一侧的微波功率引入口，与微波功率引入口连接的电力线; 以及用于将电磁波功率辐射到波导中的电源天线，电源天线连接到电力线。电源天线包括天线体，其具有连接到电力线的第一极和连接到波导的内部导体的第二极; 以及从天线体的相对侧延伸的环状的反射部。

8. 发明授权

US5266364A Method and apparatus for controlling plasma processing 失效
标题翻译：用于控制等离子体处理的方法和装置
公开(公告)号：US5266364A
公开(公告)日：1993-11-30
申请号：US745328
申请日：1991-08-15
申请人： Hitoshi Tamura , Tamotsu Shimizu
发明人： Hitoshi Tamura , Tamotsu Shimizu
IPC分类号： H05H1/18 , C23C14/34 , C23C16/50 , C23C16/511 , C23C16/52 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , B05D3/06 , C23C16/00
CPC分类号： H01J37/32293 , H01J37/32192 , H01J37/32266
摘要： A method and apparatus for controlling plasma generated utilizing microwaves and a magnetic field. Microwaves including right and left circularly polarized waves are generated and introduced into a processing chamber and a ratio of the right circularly polarized waves to the left circularly polarized waves is controlled to enable control of at least one of an electron temperature and a density distribution for plasma processing.

9. 发明授权

US12046453B2 Plasma processing apparatus 有权
公开(公告)号：US12046453B2
公开(公告)日：2024-07-23
申请号：US17018532
申请日：2020-09-11
申请人： TOKYO ELECTRON LIMITED
发明人： Taro Ikeda , Atsushi Kubo , Eiki Kamata , Nobuhiko Yamamoto
IPC分类号： H01J37/32 , C23C16/511 , C23C16/52 , H01L21/67
CPC分类号： H01J37/3222 , C23C16/52 , H01J37/32266 , H01J37/32311 , H01L21/67288 , C23C16/511 , H01J37/32201 , H01J37/32229 , H01J37/32293 , H01J37/3244 , H01J37/32715 , H01J2237/202
摘要： A plasma processing apparatus includes: a processing container; a substrate holder disposed within the processing container and configured to hold a substrate thereon; a dielectric window disposed below the substrate holder; and a plurality of phased array antennas disposed below the dielectric window and configured to irradiate a plurality of electromagnetic waves.

10. 发明申请

US20180090301A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
公开(公告)号：US20180090301A1
公开(公告)日：2018-03-29
申请号：US15573156
申请日：2016-05-10
申请人： Tokyo Electron Limited
发明人： Shinji Kubota
IPC分类号： H01J37/32
CPC分类号： H01J37/32302 , H01J37/32201 , H01J37/32293 , H01J37/3299
摘要： A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered around a predetermined center frequency; and a plasma generating unit configured to generate plasma within the processing vessel by using the carrier wave group.

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