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1. 发明授权

US06426280B2 Method for doping spherical semiconductors 失效
标题翻译：球形半导体掺杂方法
公开(公告)号：US06426280B2
公开(公告)日：2002-07-30
申请号：US09769571
申请日：2001-01-25
申请人： Evangellos Vekris , Nainesh J. Patel , Murali Hanabe
发明人： Evangellos Vekris , Nainesh J. Patel , Murali Hanabe
IPC分类号： H01L21225
CPC分类号： H01L21/67109 , H01L21/2225 , H01L21/223 , H01L31/035281 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and doping powder. The semiconductor spheres and dopant powder are then directed to a chamber defined within an enclosure. The chamber maintains a heated, inert atmosphere with which to diffuse the dopant to the semiconductor spheres.
摘要翻译：公开了掺杂晶体的方法。该方法包括用于接收半导体球和掺杂粉末的接收器。然后将半导体球和掺杂剂粉末引导到限定在外壳内的室。该室保持加热的惰性气氛，以使掺杂剂扩散到半导体球体。

2. 发明授权

US06432330B1 Jet system for spherical shape devices 失效
标题翻译：喷射系统用于球形装置
公开(公告)号：US06432330B1
公开(公告)日：2002-08-13
申请号：US09683775
申请日：2002-02-13
申请人： Murali Hanabe , Nainesh J. Patel
发明人： Murali Hanabe , Nainesh J. Patel
IPC分类号： B29B910
CPC分类号： C30B11/00 , C30B29/60
摘要： A system and method for making very small (e.g., 1 millimeter diameter) spherical shaped devices is disclosed. The system includes a supply system for providing predetermined amounts of raw material into a chamber, which is used for melting the raw material. The melted raw material is then provided to a dropper for measuring predetermined amounts of the melted raw material (droplets) and releasing the droplets into a drop tube, where they are cooled and solidified into spherical shaped silicon devices. The system includes a container of silicon powder in which the solidified spherical shaped devices are received from the drop tube, the container including a stirring mechanism for agitating the silicon powder. The system also includes a separating device for separating the powder from the solidified spherical shaped devices after the devices have been received into the container.
摘要翻译：公开了一种制造非常小（例如，1毫米直径）球形装置的系统和方法。该系统包括用于将预定量的原料提供到用于熔化原料的室中的供应系统。然后将熔融的原料提供到用于测量预定量的熔融原料（液滴）的滴管并将液滴释放到滴管中，在其中它们被冷却并固化成球形硅装置。该系统包括硅粉末容器，其中凝固的球形装置从滴管接收，容器包括用于搅拌硅粉末的搅拌机构。该系统还包括一种分离装置，用于在装置已经被容纳到容器中之后将粉末与固化的球形装置分离。

3. 发明授权

US06331477B1 Doping of spherical semiconductors during non-contact processing in the liquid state 失效
标题翻译：在液态的非接触加工过程中掺杂球形半导体
公开(公告)号：US06331477B1
公开(公告)日：2001-12-18
申请号：US09489782
申请日：2000-01-24
申请人： Evangellos Vekris , Nainesh J. Patel , Murali Hanabe
发明人： Evangellos Vekris , Nainesh J. Patel , Murali Hanabe
IPC分类号： H01L2122
CPC分类号： H01L21/2225
摘要： A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and a dopant. The semiconductor spheres are heated to a molten state. The dopant is absorbed by the semiconductor spheres. The semiconductor spheres are cooled to produce doped semiconductor spheres. The method is performed in a non-contact environment.
摘要翻译：公开了掺杂晶体的方法。该方法包括用于接收半导体球和掺杂剂的接收器。将半导体球加热至熔融状态。掺杂剂被半导体球吸收。半导体球体被冷却以产生掺杂的半导体球体。该方法在非接触环境中执行。

4. 发明授权

US06444135B1 Method to make gas permeable shell for MEMS devices with controlled porosity 失效
标题翻译：制造具有受控孔隙率的MEMS器件的透气外壳的方法
公开(公告)号：US06444135B1
公开(公告)日：2002-09-03
申请号：US09688722
申请日：2000-10-16
申请人： Murali Hanabe , Risaku Toda
发明人： Murali Hanabe , Risaku Toda
IPC分类号： B31D300
CPC分类号： B81C1/00198 , B81B2201/0235 , B81B2201/025
摘要： A method and system for making a gas permeable shell in a micro electromechanical systems (MEMS) device is disclosed. The MEMS device is created with an internal sacrificial layer. The device is then coated with a slurry composition which, after drying, is later exposed to a solvent. As a result, the sacrificial layer is removed to produce interconnected voids.
摘要翻译：公开了一种用于在微机电系统（MEMS）装置中制造气体可渗透外壳的方法和系统。 MEMS器件由内部牺牲层制成。然后用浆料组合物涂覆该装置，其在干燥之后稍后暴露于溶剂中。结果，牺牲层被去除以产生互连的空隙。

5. 发明授权

US06383287B1 System and method for performing diffusion on a three-dimensional substrate 失效
标题翻译：在三维基板上进行扩散的系统和方法
公开(公告)号：US06383287B1
公开(公告)日：2002-05-07
申请号：US09672566
申请日：2000-09-28
申请人： Murali Hanabe , Nainesh J. Patel , Michael Perdue
发明人： Murali Hanabe , Nainesh J. Patel , Michael Perdue
IPC分类号： C30B2504
CPC分类号： C30B29/06 , C30B11/00 , C30B29/60 , C30B31/00 , Y10S117/90 , Y10T117/10
摘要： A system and method for performing diffusion on a three-dimensional substrate is provided. The system includes a furnace for providing a doped (e.g., p-type) molten semiconductor material and a dropper for converting the molten semiconductor material into a series of uniformly sized droplets. The droplets are then provided to a first tube where they solidify into a semiconductor crystals. The semiconductor crystals are then heated for a predetermined period of time until an outer layer of the semiconductor crystals is melted. The melted outer layer can then be doped (e.g., n-type) and then allowed to re-solidify. As a result, a plurality of spherical shaped p-n devices is created.
摘要翻译：提供了一种用于在三维基板上进行扩散的系统和方法。该系统包括用于提供掺杂（例如p型）熔融半导体材料的熔炉和用于将熔融半导体材料转化为一系列均匀尺寸的液滴的滴管。然后将液滴提供到第一管，其中它们固化成半导体晶体。然后将半导体晶体加热预定的时间直到半导体晶体的外层熔化。然后可以将熔融的外层掺杂（例如，n型），然后使其再固化。结果，产生了多个球形p-n装置。

6. 发明授权

US06365493B1 Method for antimony and boron doping of spherical semiconductors 失效
标题翻译：锑和硼掺杂球形半导体的方法
公开(公告)号：US06365493B1
公开(公告)日：2002-04-02
申请号：US09490650
申请日：2000-01-24
申请人： Evangellos Vekris , Nainesh J. Patel , Murali Hanabe
发明人： Evangellos Vekris , Nainesh J. Patel , Murali Hanabe
IPC分类号： H01L2138
CPC分类号： H01L29/0657 , H01L21/2255 , H01L21/228
摘要： A method for doping crystals is disclosed. The method includes a receiver for receiving semiconductor spheres and doping powder. The semiconductor spheres and dopant powder are then directed to a chamber defined within an enclosure. The chamber maintains a heated, inert atmosphere with which to diffuse the dopant to the semiconductor spheres.
摘要翻译：公开了掺杂晶体的方法。该方法包括用于接收半导体球和掺杂粉末的接收器。然后将半导体球和掺杂剂粉末引导到限定在外壳内的室。该室保持加热的惰性气氛，以使掺杂剂扩散到半导体球体。

7. 发明授权

US06264742B1 Single crystal processing by in-situ seed injection 失效
标题翻译：通过原位种子注射进行单晶加工
公开(公告)号：US06264742B1
公开(公告)日：2001-07-24
申请号：US09363420
申请日：1999-07-29
申请人： Evangellos Vekris , Nainesh J. Patel , Murali Hanabe
发明人： Evangellos Vekris , Nainesh J. Patel , Murali Hanabe
IPC分类号： C30B900
CPC分类号： C30B30/08 , C30B11/00 , C30B29/60 , Y10S117/90 , Y10T117/10 , Y10T117/1016
摘要： A system and method for processing crystals is disclosed. The system includes a receiver tube for receiving semiconductor granules. The granules are then directed to a chamber defined within an enclosure. The chamber maintains a heated, inert atmosphere with which to melt the semiconductor granules into a molten mass. A nozzle, located at one end of the chamber, creates droplets from the molten mass, which then drop through a long drop tube. As the droplets move through the drop tube, they form spherical shaped semiconductor crystals. The drop tube is heated and the spherical shaped semiconductor crystals may be single crystals. An inductively coupled plasma torch positioned between the nozzle and the drop tube melts the droplets, but leaving a seed in-situ, or the droplets may be melted and a seed injected in-situ. The seed can thereby facilitate crystallization.
摘要翻译：公开了一种用于处理晶体的系统和方法。该系统包括用于接收半导体颗粒的接收管。然后将颗粒引导到限定在外壳内的室。该室保持加热的惰性气氛，以将半导体颗粒熔化成熔融物质。位于腔室一端的喷嘴从熔融物质中产生液滴，然后通过长滴管滴落。当液滴移动通过液滴管时，它们形成球形半导体晶体。滴管被加热，球形半导体晶体可以是单晶。位于喷嘴和滴管之间的电感耦合等离子体焰炬熔化液滴，但是原位留下种子，或者液滴可能被熔化，并且原位注入种子。因此种子可以促进结晶。

8. 发明授权

US6074476A Non-contact processing of crystal materials 失效
标题翻译：晶体材料的非接触加工
公开(公告)号：US6074476A
公开(公告)日：2000-06-13
申请号：US209653
申请日：1998-12-10
申请人： Murali Hanabe , Nainesh J. Patel , Evangellos Vekris
发明人： Murali Hanabe , Nainesh J. Patel , Evangellos Vekris
IPC分类号： C30B11/00 , C30B30/08 , C30B9/00 , C30B29/00
CPC分类号： C30B11/00 , C30B29/60 , C30B30/08 , Y10S117/902 , Y10T117/1024
摘要： A system and method for forming spherical semiconductor crystals is disclosed. The system includes a receiver tube 18 for receiving semiconductor granules 104. The granules are then directed to a chamber 14 defined within an enclosure 20. The chamber maintains a heated, inert atmosphere with which to melt the semiconductor granules into a molten mass. A nozzle, 40, creates droplets from the molten mass, which then drop through a long drop tube 16. As the droplets move through the drop tube, they form spherical shaped semiconductor crystals 112. The drop tube is heated and the spherical shaped semiconductor crystals may be single crystals. An inductively coupled plasma torch positioned between the nozzle and the drop tube melts the droplets, but leaving a seed in-situ. The seed can thereby facilitate crystallization.
摘要翻译：公开了一种用于形成球形半导体晶体的系统和方法。该系统包括用于接收半导体颗粒104的接收管18.然后将颗粒引导到限定在外壳20内的室14中。该室保持加热的惰性气氛，以将半导体颗粒熔化成熔融物质。喷嘴40从熔融物质产生液滴，然后液滴通过长滴管16滴落。当液滴移动通过液滴管时，它们形成球形半导体晶体112.滴管被加热，球形半导体晶体可能是单晶。位于喷嘴和下降管之间的感应耦合等离子体焰炬熔化液滴，但原位留下种子。因此种子可以促进结晶。

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