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1. 发明授权

US10541115B2 Plasma processing apparatus 有权
公开(公告)号：US10541115B2
公开(公告)日：2020-01-21
申请号：US13363427
申请日：2012-02-01
申请人： Yusaku Sakka , Ryoji Nishio , Tadayoshi Kawaguchi
发明人： Yusaku Sakka , Ryoji Nishio , Tadayoshi Kawaguchi
IPC分类号： H01J37/32
摘要： In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.

2. 发明申请

US20130160949A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20130160949A1
公开(公告)日：2013-06-27
申请号：US13570471
申请日：2012-08-09
申请人： Yusaku SAKKA , Ryoji NISHIO , Tadayoshi KAWAGUCHI
发明人： Yusaku SAKKA , Ryoji NISHIO , Tadayoshi KAWAGUCHI
IPC分类号： H01L21/3065
CPC分类号： H01J37/32119 , H01J37/321 , H01J37/32651
摘要： A plasma processing apparatus which includes a plasma processing chamber for plasma-processing a sample, an induction antenna disposed outside the plasma processing chamber, a radio-frequency power supply for supplying radio-frequency power to the induction antenna, and a unit for controlling electrostatic capacity including a Faraday shield capacitively coupled with plasma and a dielectric window allowing an induction magnetic field to transmit into the plasma processing chamber is provided; electrostatic capacity between the Faraday shield and the dielectric window at a center portion and electrostatic capacity between the Faraday shield and the dielectric window at an edge portion are controlled.
摘要翻译：一种等离子体处理装置，包括用于等离子体处理样品的等离子体处理室，设置在等离子体处理室外部的感应天线，向感应天线提供高频电力的射频电源以及用于控制静电的单元提供了包括与等离子体电容耦合的法拉第屏蔽的容量和允许感应磁场传输到等离子体处理室的介电窗口; 控制法拉第屏蔽和中心部分的电介质窗之间的静电容量以及法拉第屏蔽和边缘部分的电介质窗之间的静电电容。

3. 发明申请

US20130087288A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20130087288A1
公开(公告)日：2013-04-11
申请号：US13363427
申请日：2012-02-01
申请人： Yusaku SAKKA , Ryoji Nishio , Tadayoshi Kawaguchi
发明人： Yusaku SAKKA , Ryoji Nishio , Tadayoshi Kawaguchi
IPC分类号： H01L21/3065
CPC分类号： H01J37/3211 , H01J37/32651
摘要： In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.
摘要翻译：在能够调整感应线圈的供电部的感应磁场分布的等离子体处理装置中，校正试样上的等离子体分布，对试样施加均匀的等离子体处理，对样品进行等离子体处理，电介质窗形成真空处理室的上表面，将气体导入真空处理室的气体引入部，设置在真空处理室中并且放置有试样的试样台，上述设置的感应线圈电介质窗口和向感应线圈提供高频电力的射频电源。等离子体处理装置包括布置在感应线圈下方的扁平导体。感应线圈包括交叉供电部。导体布置在供电部分的下方。

4. 发明申请

US20110108194A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20110108194A1
公开(公告)日：2011-05-12
申请号：US12694363
申请日：2010-01-27
申请人： Ken YOSHIOKA , Motohiko Yoshigai , Ryoji Nishio , Tadayoshi Kawaguchi
发明人： Ken YOSHIOKA , Motohiko Yoshigai , Ryoji Nishio , Tadayoshi Kawaguchi
IPC分类号： C23F1/08 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/321 , H01J37/3211
摘要： The invention provides a plasma processing apparatus in which ring-like conductors 8a and 8b are arranged closed to and along an induction antenna 1 composed of an inner circumference coil 1a and an outer circumference coil 1b. Ring-like conductors 8a and 8b are each characterized in that the radius from the center of the apparatus and the cross-sectional shape of the conductor body varies along the circumferential angle of the coils. Since the mutual inductances between the ring-like conductors 8a and 8b and the induction antenna 1 and between the ring-like conductors 8a and 8b and the plasma along the circumferential position are controlled, it becomes possible to compensate for the coil currents varied along the circumference of the coils of the induction antenna 1, and to improve the non-uniformity in the circumferential direction of the current in the generated plasma.
摘要翻译：本发明提供一种等离子体处理装置，其中环状导体8a和8b布置在由内周线圈1a和外周线圈1b构成的感应天线1的附近。环形导体8a和8b的特征在于，从设备中心的半径和导体主体的横截面形状沿线圈的圆周角度变化。由于控制环状导体8a，8b与感应天线1之间以及环状导体8a，8b与周边位置之间的等离子体之间的互感，因此能够补偿沿着感应天线1的线圈的周长，并且提高所产生的等离子体中的电流的圆周方向的不均匀性。

5. 发明申请

US20080236744A1 Plasma etching equipment 审中-公开
标题翻译：等离子体蚀刻设备
公开(公告)号：US20080236744A1
公开(公告)日：2008-10-02
申请号：US11896293
申请日：2007-08-30
申请人： Muneo Furuse , Shingo Kimura , Tadayoshi Kawaguchi
发明人： Muneo Furuse , Shingo Kimura , Tadayoshi Kawaguchi
IPC分类号： H01L21/306
CPC分类号： H01J37/32477 , H01J37/32623
摘要： To provide a plasma processing equipment that can reduce the particles or contamination in a sample by suppressing the occurrence of an abnormal electric discharge during processing. The plasma processing equipment that employs a plasma process using a halogen-based gas in fabricating a semiconductor device, wherein a plasma sprayed coating film is applied to a surface of a well, such as a wall in a processing chamber, which plasma is in constant with, and wherein a conductor is incorporated into a material of this plasma sprayed coating film, thereby making the plasma sprayed coating film conductive.
摘要翻译：提供能够通过抑制处理时的异常放电的发生而能够减少样品中的颗粒或污染的等离子体处理设备。在制造半导体器件中采用基于卤素气体的等离子体处理设备的等离子体处理设备，其中将等离子体喷涂的涂膜施加到诸如处理室中的壁的表面，该等离子体处于恒定的状态并且其中将导体结合到该等离子体喷涂涂膜的材料中，从而使等离子体喷涂涂膜成为导电性。

6. 发明授权

US06914207B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US06914207B2
公开(公告)日：2005-07-05
申请号：US10688991
申请日：2003-10-21
申请人： Tadayoshi Kawaguchi , Tadamitsu Kanekiyo , Akihiko Mitsuda , Takeshi Shimada , Saburou Kanai
发明人： Tadayoshi Kawaguchi , Tadamitsu Kanekiyo , Akihiko Mitsuda , Takeshi Shimada , Saburou Kanai
IPC分类号： H01J37/32 , B23K9/00
CPC分类号： H01J37/32862 , H01J37/321
摘要： In a plasma processing method which comprises supplying a processing gas to a vacuum vessel forming a plasma production part, producing a plasma using an antenna and a Faraday shield which are provided at outer periphery of the vacuum vessel and to which a high-frequency electric power can be applied, and carrying out the processing, a voltage of at least 500 V is applied to the Faraday shield and a sample which is disposed in the vacuum vessel and which is a nonvolatile material as a material to be etched is etched.
摘要翻译：在等离子体处理方法中，其包括向形成等离子体生产部件的真空容器供给处理气体，使用设置在真空容器的外周的天线和法拉第屏蔽来制造等离子体，并且将高频电力并且进行处理时，向法拉第屏蔽件施加至少500V的电压，并且蚀刻设置在真空容器中并且作为待蚀刻材料的非挥发性材料的样品。

7. 发明申请

US20120267050A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120267050A1
公开(公告)日：2012-10-25
申请号：US13190654
申请日：2011-07-26
申请人： Yusaku SAKKA , Ryoji Nishio , Tadayoshi Kawaguchi
发明人： Yusaku SAKKA , Ryoji Nishio , Tadayoshi Kawaguchi
IPC分类号： H01L21/3065
CPC分类号： H01J37/32119 , H01J37/321 , H01J37/3211
摘要： A uniform plasma processing to a sample is performed by adjusting the distribution of the induced magnetic field in an inductively-coupled-plasma processing apparatus and correcting the plasma distribution on the sample. Between an induction coil and a dielectric window a conductor is provided along the induction coil and side by side with at least a part of the induction coil in its circumferential direction. The conductor is set up at a location where the intensity of the induced magnetic field generated from the induction coil is wished to be weakened and the relationship of Lp≧Lr is satisfied, letting the shortest distance from the induction coil to the surface of the conductor be Lr and letting the shortest distance from the induction coil to the plasma generated directly under the dielectric window be Lp.
摘要翻译：通过调整感应耦合等离子体处理装置中的感应磁场的分布并校正样品上的等离子体分布来对样品进行均匀的等离子体处理。在感应线圈和电介质窗口之间，沿感应线圈设置有导体，与感应线圈的周向的至少一部分并排配置。将导体设置在感应线圈产生的感应磁场的强度要弱的位置，并且满足Lp≥Lr的关系的位置，使从感应线圈到导体表面的最短距离使Lr和从电感窗口直接产生的从感应线圈到等离子体的最短距离为Lp。

8. 发明申请

US20120138229A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20120138229A1
公开(公告)日：2012-06-07
申请号：US13020929
申请日：2011-02-04
申请人： Yusaku SAKKA , Ryoji NISHIO , Tadayoshi KAWAGUCHI
发明人： Yusaku SAKKA , Ryoji NISHIO , Tadayoshi KAWAGUCHI
IPC分类号： C23F1/08
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/32642
摘要： The invention provides a plasma processing apparatus having a means for generating a plasma capable of correcting the eccentricity of the plasma diffused above the wafer caused by magnetic field or by vacuum eccentricity, comprising a vacuum processing chamber in which a sample is processed via plasma, a gas supply means for supplying gas into the vacuum processing chamber, a sample stage disposed within the vacuum processing chamber on which the sample is placed, an induction coil disposed outside the vacuum processing chamber, a radio frequency power supply for supplying radio frequency power to the induction coil, a Faraday shield being capacitively coupled with the plasma, and an eccentricity correction means disposed between the induction coil and a dielectric sealing window constituting an upper surface of the vacuum processing chamber, wherein the eccentricity correction means generates a plasma capable of correcting the eccentricity of the plasma.
摘要翻译：本发明提供了一种等离子体处理装置，其具有用于产生等离子体的装置，其能够校正由磁场或真空偏心引起的在晶片上方扩散的等离子体的偏心，该真空处理室包括通过等离子体处理样品的真空处理室，用于向真空处理室供应气体的气体供给装置，设置在其上放置样品的真空处理室内的样品台，设置在真空处理室外部的感应线圈，向该真空处理室供给射频电力的射频电源感应线圈，与等离子体电容耦合的法拉第屏蔽，以及设置在感应线圈和构成真空处理室的上表面的电介质密封窗之间的偏心校正装置，其中偏心校正装置产生能够校正等离子体的偏心率

9. 发明申请

US20080180030A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080180030A1
公开(公告)日：2008-07-31
申请号：US11680011
申请日：2007-02-28
申请人： Tsutomu Tetsuka , Tadayoshi Kawaguchi
发明人： Tsutomu Tetsuka , Tadayoshi Kawaguchi
IPC分类号： H05H1/00
CPC分类号： H01J37/32467 , H01J37/32495 , H01J37/32522
摘要： A plasma processing apparatus includes a vacuum container, a processing chamber arranged in the vacuum container and supplied with a processing gas, a holding electrode arranged in the processing chamber for holding a sample to be processed, on the upper surface thereof, an electric field supply unit for supplying an electric field and a magnetic field supply unit for supplying a magnetic field to form the plasma in the space above the holding electrode in the processing chamber, and a grounded wall member making up the inner wall, substantially in the shape of a truncated cone, of the processing chamber above the holding electrode.
摘要翻译：一种等离子体处理装置，包括真空容器，设置在真空容器中并供给处理气体的处理室，设置在处理室中用于保持待处理样品的保持电极，其上表面具有电场供给用于提供电场的单元和用于在处理室中的保持电极上方的空间中提供磁场以形成等离子体的磁场供应单元，以及构成内壁的接地壁构件，基本上为处理室的截头锥体在保持电极上方。

10. 发明申请

US20070215278A1 Plasma etching apparatus and method for forming inner wall of plasma processing chamber 审中-公开
标题翻译：等离子体蚀刻装置及等离子体处理室内壁形成方法
公开(公告)号：US20070215278A1
公开(公告)日：2007-09-20
申请号：US11367597
申请日：2006-03-06
申请人： Muneo Furuse , Masanori Kadotani , Katsuji Matano , Tadayoshi Kawaguchi , Masatsugu Arai
发明人： Muneo Furuse , Masanori Kadotani , Katsuji Matano , Tadayoshi Kawaguchi , Masatsugu Arai
IPC分类号： H01L21/306
CPC分类号： H01J37/32504 , H01J37/32477
摘要： A plasma etching apparatus is provided which can prevent corrosion of an aluminum substrate constituting an etching processing chamber or an inside component thereof, thereby avoiding a reduction in productivity due to scattering of a sprayed coating. In the plasma etching apparatus, an anodic oxide film is disposed between a ceramic sprayed coating with excellent resistance to plasma, and the etching processing chamber and the inside component thereof made of aluminum alloy. The anodic oxide film has a thickness of 5 μm or less to have heat resistance.
摘要翻译：提供一种等离子体蚀刻装置，其可以防止构成蚀刻处理室或其内部组分的铝基板的腐蚀，从而避免由于喷涂涂层的飞散而导致的生产率降低。在等离子体蚀刻装置中，阳极氧化膜设置在耐等离子体性优异的陶瓷喷涂涂层之间，蚀刻处理室及其内部由铝合金制成。阳极氧化膜的厚度为5μm以下，具有耐热性。

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