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1. 发明申请

US20130126206A1 APPARATUS AND METHODS FOR IMPROVING RELIABILITY OF RF GROUNDING 有权
标题翻译：改善射频接地可靠性的装置和方法
公开(公告)号：US20130126206A1
公开(公告)日：2013-05-23
申请号：US13302012
申请日：2011-11-22
申请人： Jianhua Zhou , Dale R. Du Bois , Mohamad A. Ayoub , Juan Carlos Rocha-Alvarez
发明人： Jianhua Zhou , Dale R. Du Bois , Mohamad A. Ayoub , Juan Carlos Rocha-Alvarez
IPC分类号： H02G3/04
CPC分类号： H01J37/32091 , H01J37/32577
摘要： Embodiments of the present invention provide an RF conducting rod comprising a hollow portion. Particularly, the RF conducting rod comprises an elongated hollow body having a sidewall enclosing an inner volume, a first solid connector extending from a first end of the elongated hollow body, and a second solid connector extending from a second end of the elongated hollow body. Each of the elongated hollow body, the first solid connector and the second solid connector is formed from an electrically conductive material.
摘要翻译：本发明的实施例提供一种包括中空部分的RF导电棒。特别地，RF导杆包括细长的中空本体，其具有封闭内部容积的侧壁，从细长中空体的第一端延伸的第一固体连接器和从细长中空体的第二端延伸的第二固体连接器。每个细长的中空体，第一固体连接器和第二固体连接器由导电材料形成。

2. 发明授权

US08884524B2 Apparatus and methods for improving reliability of RF grounding 有权
标题翻译：提高射频接地可靠性的装置和方法
公开(公告)号：US08884524B2
公开(公告)日：2014-11-11
申请号：US13302012
申请日：2011-11-22
申请人： Jianhua Zhou , Dale R. Du Bois , Mohamad A. Ayoub , Juan Carlos Rocha-Alvarez
发明人： Jianhua Zhou , Dale R. Du Bois , Mohamad A. Ayoub , Juan Carlos Rocha-Alvarez
IPC分类号： H05B31/26 , H01J37/32
CPC分类号： H01J37/32091 , H01J37/32577
摘要： Embodiments of the present invention provide an RF conducting rod comprising a hollow portion. Particularly, the RF conducting rod comprises an elongated hollow body having a sidewall enclosing an inner volume, a first solid connector extending from a first end of the elongated hollow body, and a second solid connector extending from a second end of the elongated hollow body. Each of the elongated hollow body, the first solid connector and the second solid connector is formed from an electrically conductive material.
摘要翻译：本发明的实施例提供一种包括中空部分的RF导电棒。特别地，RF导杆包括细长的中空本体，其具有封闭内部容积的侧壁，从细长中空体的第一端延伸的第一固体连接器和从细长中空体的第二端延伸的第二固体连接器。每个细长的中空体，第一固体连接器和第二固体连接器由导电材料形成。

3. 发明授权

US08587321B2 System and method for current-based plasma excursion detection 有权
标题翻译：基于电流等离子体偏移检测的系统和方法
公开(公告)号：US08587321B2
公开(公告)日：2013-11-19
申请号：US12890089
申请日：2010-09-24
申请人： Jian J. Chen , Mohamad A. Ayoub
发明人： Jian J. Chen , Mohamad A. Ayoub
IPC分类号： G01R31/14
CPC分类号： H01J37/32935 , H01J37/32183
摘要： A system and method for the detection of plasma excursions, such as arcs, micro-arcs, or other plasma instability, during plasma processing by directly monitoring RF current just prior to reaching an RF power electrode of a plasma processing chamber is provided. The monitored RF current may be converted to an RF voltage and then passed through a succession of analog filters and amplifiers to provide a plasma excursion signal. The plasma excursion signal is compared to a preset value, and at points where the plasma excursion signal exceeds the preset value, an alarm signal is generated. The alarm signal is then fed back into a system controller so that an operator can be alerted and/or the processing system can be shut down. In one embodiment, the RF current amplified and converted to a digital signal for digital filtering and processing. In certain embodiments, multiple processing regions can be monitored by a single detection control unit.
摘要翻译：提供了一种用于在等离子体处理期间通过在到达等离子体处理室的RF功率电极之前直接监视RF电流来检测诸如电弧，微弧或其他等离子体不稳定性的等离子体偏移的系统和方法。监控的RF电流可以转换成RF电压，然后通过一系列模拟滤波器和放大器，以提供等离子体偏移信号。将等离子体偏移信号与预设值进行比较，并且在等离子体偏移信号超过预设值的点处，产生报警信号。然后将报警信号反馈回系统控制器，以便可以警告操作员和/或处理系统被关闭。在一个实施例中，RF电流被放大并转换成用于数字滤波和处理的数字信号。在某些实施例中，多个处理区域可以由单个检测控制单元监视。

4. 发明申请

US20120074951A1 SYSTEM AND METHOD FOR CURRENT-BASED PLASMA EXCURSION DETECTION 有权
标题翻译：基于电流等离子体检测的系统和方法
公开(公告)号：US20120074951A1
公开(公告)日：2012-03-29
申请号：US12890089
申请日：2010-09-24
申请人： Jian J. Chen , Mohamad A. Ayoub
发明人： Jian J. Chen , Mohamad A. Ayoub
IPC分类号： G01R31/14
CPC分类号： H01J37/32935 , H01J37/32183
摘要： A system and method for the detection of plasma excursions, such as arcs, micro-arcs, or other plasma instability, during plasma processing by directly monitoring RF current just prior to reaching an RF power electrode of a plasma processing chamber is provided. The monitored RF current may be converted to an RF voltage and then passed through a succession of analog filters and amplifiers to provide a plasma excursion signal. The plasma excursion signal is compared to a preset value, and at points where the plasma excursion signal exceeds the preset value, an alarm signal is generated. The alarm signal is then fed back into a system controller so that an operator can be alerted and/or the processing system can be shut down. In one embodiment, the RF current amplified and converted to a digital signal for digital filtering and processing. In certain embodiments, multiple processing regions can be monitored by a single detection control unit.
摘要翻译：提供了一种用于在等离子体处理期间通过在到达等离子体处理室的RF功率电极之前直接监视RF电流来检测诸如电弧，微弧或其他等离子体不稳定性的等离子体偏移的系统和方法。监控的RF电流可以转换成RF电压，然后通过一系列模拟滤波器和放大器，以提供等离子体偏移信号。将等离子体偏移信号与预设值进行比较，并且在等离子体偏移信号超过预设值的点处，产生报警信号。然后将报警信号反馈回系统控制器，以便可以警告操作员和/或处理系统被关闭。在一个实施例中，RF电流被放大并转换成用于数字滤波和处理的数字信号。在某些实施例中，多个处理区域可以由单个检测控制单元监视。

5. 发明申请

US20120205046A1 TUNABLE GROUND PLANES IN PLASMA CHAMBERS 审中-公开
标题翻译：等离子体燃烧室中的接地平台
公开(公告)号：US20120205046A1
公开(公告)日：2012-08-16
申请号：US13456308
申请日：2012-04-26
申请人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad A. Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad A. Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： H01L21/3065
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/458 , C23C16/4586 , C23C16/503 , C23C16/505 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J37/32541
摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
摘要翻译：提供了一种用于控制等离子体室中的等离子体放电的强度和分布的装置和方法。在一个实施例中，成形电极被嵌入到基板支撑件中以在腔室内提供具有径向和轴向分量的电场。在另一个实施例中，喷头组件的面板电极被隔离器分成区域，使不同的电压能够施加到不同的区域。此外，一个或多个电极可以嵌入在腔室侧壁中。

6. 发明授权

US10227695B2 Shadow ring for modifying wafer edge and bevel deposition 有权
公开(公告)号：US10227695B2
公开(公告)日：2019-03-12
申请号：US12974365
申请日：2010-12-21
申请人： Dale R. Du Bois , Mohamad A. Ayoub , Robert Kim , Amit Bansal , Mark Fodor , Binh Nguyen , Siu F. Cheng , Hang Yu , Chiu Chan , Ganesh Balasubramanian , Deenesh Padhi , Juan Carlos Rocha
发明人： Dale R. Du Bois , Mohamad A. Ayoub , Robert Kim , Amit Bansal , Mark Fodor , Binh Nguyen , Siu F. Cheng , Hang Yu , Chiu Chan , Ganesh Balasubramanian , Deenesh Padhi , Juan Carlos Rocha
IPC分类号： C23C14/04 , C23C16/04 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/12 , H01J37/32 , H01J37/34 , H01L21/687
摘要： Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.

7. 发明申请

US20160145742A1 TUNABLE GROUND PLANES IN PLASMA CHAMBERS 审中-公开
公开(公告)号：US20160145742A1
公开(公告)日：2016-05-26
申请号：US14552273
申请日：2014-11-24
申请人： Karthik Janakiraman , Thomas NOWAK , Juan Carlos ROCHA-ALVAREZ , Mark FODOR , Dale R. DU BOIS , Amit Kumar BANSAL , Mohamad A. AYOUB , Eller Y. JUCO , Visweswaren SIVARAMAKRISHNAN , Hichem M'SAAD
发明人： Karthik Janakiraman , Thomas NOWAK , Juan Carlos ROCHA-ALVAREZ , Mark FODOR , Dale R. DU BOIS , Amit Kumar BANSAL , Mohamad A. AYOUB , Eller Y. JUCO , Visweswaren SIVARAMAKRISHNAN , Hichem M'SAAD
IPC分类号： C23C16/455 , H01J37/32 , C23C16/503 , C23C16/505 , C23C16/458 , C23C16/44
摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

8. 发明授权

US08778813B2 Confined process volume PECVD chamber 有权
标题翻译：密闭过程体积PECVD室
公开(公告)号：US08778813B2
公开(公告)日：2014-07-15
申请号：US13102846
申请日：2011-05-06
申请人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
发明人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
IPC分类号： H01L21/31 , H01L21/469 , H01L21/00 , H01J37/32 , C23C16/46 , C23C16/509 , H01L21/67 , H01L21/30 , H01L21/42 , C23C16/00 , B05C11/11
CPC分类号： H01L21/6719 , C23C16/46 , C23C16/5096 , H01J37/32495 , H01J37/32568 , H01J37/32651 , H01J37/32715
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.
摘要翻译：提供了一种用于等离子体处理衬底的装置。该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。电极也耦合到电源。衬底支撑件形成有允许很少偏离平行度的刚度。屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。泵送气室位于基板支撑处理位置下方并与其间隔开。

9. 发明申请

US20110294303A1 CONFINED PROCESS VOLUME PECVD CHAMBER 有权
标题翻译：限制过程体积PECVD室
公开(公告)号：US20110294303A1
公开(公告)日：2011-12-01
申请号：US13102846
申请日：2011-05-06
申请人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
发明人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
IPC分类号： C23C16/44 , H01L21/30 , C23C16/509
CPC分类号： H01L21/6719 , C23C16/46 , C23C16/5096 , H01J37/32495 , H01J37/32568 , H01J37/32651 , H01J37/32715
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.
摘要翻译：提供了一种用于等离子体处理衬底的装置。该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。电极也耦合到电源。衬底支撑件形成有允许很少偏离平行度的刚度。屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。泵送气室位于基板支撑处理位置下方并与其间隔开。

10. 发明申请

US20110159211A1 SHADOW RING FOR MODIFYING WAFER EDGE AND BEVEL DEPOSITION 审中-公开
标题翻译：用于修改波浪边缘和水平沉积物的阴影环
公开(公告)号：US20110159211A1
公开(公告)日：2011-06-30
申请号：US12974365
申请日：2010-12-21
申请人： Dale R. Du Bois , Mohamad A. Ayoub , Robert Kim , Amit Bansal , Mark Fodor , Binh Nguyen , Siu F. Cheng , Hang Yu , Chiu Chan , Ganesh Balasubramanian , Deenesh Padhi , Juan Carlos Rocha
发明人： Dale R. Du Bois , Mohamad A. Ayoub , Robert Kim , Amit Bansal , Mark Fodor , Binh Nguyen , Siu F. Cheng , Hang Yu , Chiu Chan , Ganesh Balasubramanian , Deenesh Padhi , Juan Carlos Rocha
IPC分类号： C23C16/00 , B05C11/00
CPC分类号： C23C16/04 , C23C14/04 , C23C14/042 , C23C16/042 , C23C16/4401 , C23C16/45589 , C23C16/4585 , C30B25/12 , H01J37/32642 , H01J37/32651 , H01J37/32715 , H01J37/3441 , H01L21/68721 , H01L21/68735
摘要： Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.
摘要翻译：本发明的实施例设想一种阴影环，其在晶片的边缘上提供增加或减少的和更均匀的沉积。通过从阴影环的顶部和/或底部表面去除材料，可以实现增加的边缘沉积和斜面覆盖。在一个实施例中，通过在底表面上设置凹槽来减小底表面上的材料。通过增加阴影环的材料量，降低了边缘沉积和斜面覆盖。调整晶片边缘处沉积的另一种方法包括增加或减小阴影环的内径。形成阴影环的材料也可以改变以改变晶片边缘处的沉积量。

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