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1. 发明申请

US20120205046A1 TUNABLE GROUND PLANES IN PLASMA CHAMBERS 审中-公开
标题翻译：等离子体燃烧室中的接地平台
公开(公告)号：US20120205046A1
公开(公告)日：2012-08-16
申请号：US13456308
申请日：2012-04-26
申请人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad A. Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad A. Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： H01L21/3065
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/458 , C23C16/4586 , C23C16/503 , C23C16/505 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J37/32541
摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
摘要翻译：提供了一种用于控制等离子体室中的等离子体放电的强度和分布的装置和方法。在一个实施例中，成形电极被嵌入到基板支撑件中以在腔室内提供具有径向和轴向分量的电场。在另一个实施例中，喷头组件的面板电极被隔离器分成区域，使不同的电压能够施加到不同的区域。此外，一个或多个电极可以嵌入在腔室侧壁中。

2. 发明申请

US20090236214A1 TUNABLE GROUND PLANES IN PLASMA CHAMBERS 审中-公开
标题翻译：等离子体燃烧室中的接地平台
公开(公告)号：US20090236214A1
公开(公告)日：2009-09-24
申请号：US12052431
申请日：2008-03-20
申请人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/458 , C23C16/4586 , C23C16/503 , C23C16/505 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J37/32541
摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
摘要翻译：提供了一种用于控制等离子体室中的等离子体放电的强度和分布的装置和方法。在一个实施例中，成形电极嵌入在基板支撑件中以在腔室内提供具有径向和轴向分量的电场。在另一个实施例中，喷头组件的面板电极被隔离器分成区域，使不同的电压能够施加到不同的区域。此外，一个或多个电极可以嵌入在腔室侧壁中。

3. 发明授权

US09337072B2 Apparatus and method for substrate clamping in a plasma chamber 有权
标题翻译：用于在等离子体室中进行基板夹持的装置和方法
公开(公告)号：US09337072B2
公开(公告)日：2016-05-10
申请号：US12950105
申请日：2010-11-19
申请人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
发明人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
IPC分类号： H02N13/00 , H01L21/683 , C23C16/52 , H01J37/32 , H01L21/67
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译：本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的假想阻抗。

4. 发明申请

US20110090613A1 APPARATUS AND METHOD FOR SUBSTRATE CLAMPING IN A PLASMA CHAMBER 有权
标题翻译：用于在等离子体室中衬底夹紧的装置和方法
公开(公告)号：US20110090613A1
公开(公告)日：2011-04-21
申请号：US12950105
申请日：2010-11-19
申请人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
发明人： Ganesh Balasubramanian , Amit Bansal , Eller Y. Juco , Mohamad Ayoub , Hyung-Joon Kim , Karthik Janakiraman , Sudha Rathi , Deenesh Padhi , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad , Anton Baryshnikov , Chiu Chan , Shuang Liu
IPC分类号： H01L21/683 , H01L21/66 , G01R27/02
CPC分类号： H01L21/6831 , C23C16/52 , H01J37/32431 , H01L21/67069 , H01L21/67253
摘要： The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.
摘要翻译：本发明通常提供了用于监测和维持等离子体反应器中的基板的平坦度的方法和装置。本发明的某些实施例提供了一种处理衬底的方法，包括将衬底定位在静电吸盘上，在静电吸盘中的电极与平行于静电吸盘的对置电极之间施加RF功率，将DC偏压施加到静电卡盘中的电极将基板夹在静电卡盘上，并测量静电卡盘的虚拟阻抗。

5. 发明授权

US07094313B2 Universal mid-frequency matching network 失效
标题翻译：通用中频匹配网络
公开(公告)号：US07094313B2
公开(公告)日：2006-08-22
申请号：US10829520
申请日：2004-04-21
申请人： Eller Y. Juco , Visweswaren Sivaramakrishnan , Mario David Silvetti , Talex Sajoto
发明人： Eller Y. Juco , Visweswaren Sivaramakrishnan , Mario David Silvetti , Talex Sajoto
IPC分类号： C23F1/02 , C23C14/00 , C23C16/00
CPC分类号： H01J37/32082 , C23C16/5096 , H01J37/32183
摘要： A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.
摘要翻译：衬底处理系统设置有处理室，交流电压源和阻抗匹配网络。处理室在处理期间保持基板，并且交流电压供应与处理室连接以将能量电容耦合到处理室内形成的等离子体。阻抗匹配网络与交流电源耦合，并具有可变电阻元件和可变无功元件，其状态分别定义阻抗的不同实部和虚部。

6. 发明授权

US09275838B2 Arrangements for manipulating plasma confinement within a plasma processing system and methods thereof 有权
标题翻译：在等离子体处理系统中操纵等离子体约束的布置及其方法
公开(公告)号：US09275838B2
公开(公告)日：2016-03-01
申请号：US12552474
申请日：2009-09-02
申请人： Eller Y. Juco , Neungho Shin , Yunsang Kim , Andrew Bailey
发明人： Eller Y. Juco , Neungho Shin , Yunsang Kim , Andrew Bailey
IPC分类号： H01J37/32
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32541 , H01J37/32568 , H01J37/32706 , H01J2237/334
摘要： An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.
摘要翻译：一种用于在处理室内的等离子体处理期间控制斜面蚀刻速率的装置。该装置包括电源和气体分配系统。该布置还包括下电极，其被配置为至少用于支撑衬底。该布置还包括位于基板上方的顶环电极和位于基板下方的底环电极。该布置还包括耦合到顶环电极并且被配置为至少用于控制流过顶环电极的电流以控制可用于蚀刻衬底顶部边缘的至少一部分的等离子体的第一匹配布置。该装置还包括第二匹配装置，其被配置为控制流过底环电极的电流以控制可用于至少蚀刻至少一部分衬底底边缘的等离子体的量。

7. 发明申请

US20110049101A1 ARRANGEMENTS FOR MANIPULATING PLASMA CONFINEMENT WITHIN A PLASMA PROCESSING SYSTEM AND METHODS THEREOF 有权
标题翻译：用于在等离子体处理系统中操纵等离子体配置的装置及其方法
公开(公告)号：US20110049101A1
公开(公告)日：2011-03-03
申请号：US12552474
申请日：2009-09-02
申请人： Eller Y. Juco , Neungho Shin , Yunsang Kim , Andrew Bailey
发明人： Eller Y. Juco , Neungho Shin , Yunsang Kim , Andrew Bailey
IPC分类号： C23F1/00
CPC分类号： H01J37/32183 , H01J37/32091 , H01J37/32541 , H01J37/32568 , H01J37/32706 , H01J2237/334
摘要： An arrangement for controlling bevel etch rate during plasma processing within a processing chamber. The arrangement includes a power source and a gas distribution system. The arrangement also includes a lower electrode, which is configured at least for supporting a substrate. The arrangement further includes a top ring electrode positioned above the substrate and a bottom ring electrode positioned below the substrate. The arrangement yet also includes a first match arrangement coupled to the top ring electrode and configured at least for controlling current flowing through the top ring electrode to control amount of plasma available for etching at least a part of the substrate top edge. The arrangement yet further includes a second match arrangement configured to control the current flowing through the bottom ring electrode to control amount of plasma available for at least etching at least a part of the substrate bottom edge.
摘要翻译：一种用于在处理室内的等离子体处理期间控制斜面蚀刻速率的装置。该装置包括电源和气体分配系统。该布置还包括下电极，其被配置为至少用于支撑衬底。该布置还包括位于基板上方的顶环电极和位于基板下方的底环电极。该布置还包括耦合到顶环电极并且被配置为至少用于控制流过顶环电极的电流以控制可用于蚀刻衬底顶部边缘的至少一部分的等离子体的第一匹配布置。该装置还包括第二匹配装置，其被配置为控制流过底环电极的电流以控制可用于至少蚀刻至少一部分衬底底边缘的等离子体的量。

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