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1. 发明授权

US07795589B2 Infrared sensor and method of calibrating the same 有权
标题翻译：红外传感器及其校准方法
公开(公告)号：US07795589B2
公开(公告)日：2010-09-14
申请号：US12175304
申请日：2008-07-17
申请人： Seth Prejean , Miguel Santana, Jr. , Ronald M. Potok
发明人： Seth Prejean , Miguel Santana, Jr. , Ronald M. Potok
IPC分类号： G01J5/02
CPC分类号： G12B13/00
摘要： A method includes determining a transmission of a transmissive window and a transmission of a transmissive fluid. In addition, an infrared emission of the transmissive window is determined along with an infrared emission of the transmissive fluid for at least one temperature. In a system that has an infrared sensor and an optical pathway to the infrared sensor, the transmissive window and the transmissive fluid are placed in the optical pathway. A semiconductor chip is placed in the optical pathway proximate the transmissive fluid. Radiation from the optical pathway is measured with the infrared sensor. An emissivity of the semiconductor chip is determined using the measured radiation and the determined transmissions and emissions of the transmissive window and the transmissive fluid.
摘要翻译：一种方法包括确定透射窗的透射和透射流体的透射。此外，透射窗的红外发射与至少一个温度的透射流体的红外发射一起确定。在具有红外传感器和到红外传感器的光路的系统中，透射窗和透射流体被放置在光路中。将半导体芯片放置在靠近透射流体的光学路径中。用红外线传感器测量光路径的辐射。使用所测量的辐射和所确定的透射窗和透射流体的透射和发射来确定半导体芯片的发射率。

2. 发明授权

US07272010B1 Thermally conductive integrated circuit mounting structures 有权
标题翻译：导热集成电路安装结构
公开(公告)号：US07272010B1
公开(公告)日：2007-09-18
申请号：US11338033
申请日：2006-01-24
申请人： Miguel Santana, Jr. , Michael Bruce , Thomas Chu , Rama R. Goruganthu , Robert Powell
发明人： Miguel Santana, Jr. , Michael Bruce , Thomas Chu , Rama R. Goruganthu , Robert Powell
IPC分类号： H05K7/20
CPC分类号： H01L23/3675 , B82Y10/00 , H01L23/055 , H01L23/145 , H01L23/373 , H01L24/48 , H01L2224/16 , H01L2224/45014 , H01L2224/48091 , H01L2224/48227 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15312 , H01L2924/16152 , H01L2924/16195 , H01L2924/19041 , Y10S977/833 , H01L2924/00 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Various devices for mounting circuit devices and methods of making the same are provided. In aspect, a device is provided that includes a member for holding an integrated circuit. The member contains a first plurality of carbon nanotubes to enhance the thermal conductivity thereof. At least one conductor member projects from the member. In another aspect, a method of fabricating an interface for an electronic component is provided that includes forming a member containing a first plurality of carbon nanotubes and forming at least one conductor on the member.
摘要翻译：提供了用于安装电路装置的各种装置及其制造方法。在一方面，提供一种包括用于保持集成电路的部件的装置。该构件包含第一多个碳纳米管以增强其导热性。至少有一个导体成员从该成员突出。在另一方面，提供一种制造电子部件的界面的方法，其包括形成包含第一多个碳纳米管并在所述部件上形成至少一个导体的部件。

3. 发明授权

US06507044B1 Position-selective and material-selective silicon etching to form measurement structures for semiconductor fabrication 失效
标题翻译：位置选择性和材料选择性硅蚀刻，以形成用于半导体制造的测量结构
公开(公告)号：US06507044B1
公开(公告)日：2003-01-14
申请号：US09277024
申请日：1999-03-25
申请人： Miguel Santana, Jr. , Markangelo S. D'Souza
发明人： Miguel Santana, Jr. , Markangelo S. D'Souza
IPC分类号： H01L2358
CPC分类号： H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A method for position-selective and material-selective etching of silicon, and examination structures formed using the method, are presented. A semiconductor topography is exposed to an electron beam in the presence of xenon difluoride (XeF2) gas. The beam is scanned over a portion of the semiconductor topography, and silicon portions of the topography contacted by the electron beam and the XeF2 gas are etched. Non-silicon portions, such as dielectrics, metals, and/or metal silicides, are not believed to be etched. Shorter exposure times may be used to remove polycrystalline silicon portions of a topography, while leaving monocrystalline silicon portions intact. Removal of silicon and non-silicon portions of the topography by other means may be used to expose silicon portions of the topography. The electron beam controlled etching recited herein may be used alone or combined with such removal by other means to form examination structures for use in evaluation of semiconductor manufacturing techniques.
摘要翻译：提出了一种用于硅的位置选择和材料选择性蚀刻的方法，以及使用该方法形成的检查结构。半导体形貌在二氟化氙（XeF 2）气体存在下暴露于电子束。在半导体拓扑的一部分上扫描光束，并且蚀刻与电子束和XeF 2气体接触的形貌的硅部分。不认为非硅部分，例如电介质，金属和/或金属硅化物被蚀刻。较短的曝光时间可用于去除形貌的多晶硅部分，同时保留单晶硅部分。通过其他方法去除地形的硅和非硅部分可以用于暴露地形的硅部分。本文所述的电子束控制蚀刻可以单独使用或通过其它方式与这种去除组合使用，以形成用于评估半导体制造技术的检查结构。

4. 发明授权

US07022976B1 Dynamically adjustable probe tips 有权
标题翻译：动态调节探头
公开(公告)号：US07022976B1
公开(公告)日：2006-04-04
申请号：US10405295
申请日：2003-04-02
申请人： Miguel Santana, Jr. , Robert Powell
发明人： Miguel Santana, Jr. , Robert Powell
IPC分类号： B23Q17/09 , G01N19/02 , G01B5/28
CPC分类号： G01Q60/30 , G01Q70/06
摘要： Various probe systems and probes are provided. In one aspect, a probe is provided that includes a base and a first member coupled to the base. The first member has a first tip for probing a circuit device. A first actuator is coupled to the first member for moving the first member relative to the base. Electrical and/or topographical probing is possible.
摘要翻译：提供了各种探头系统和探头。在一个方面，提供了一种探针，其包括底座和联接到底座的第一构件。第一个成员具有探测电路设备的第一个提示。第一致动器联接到第一构件，用于相对于基座移动第一构件。电气和/或地形探测是可能的。

5. 发明授权

US06800933B1 Integrated circuit cooling device 有权
标题翻译：集成电路冷却装置
公开(公告)号：US06800933B1
公开(公告)日：2004-10-05
申请号：US09840019
申请日：2001-04-23
申请人： Charles R. Mathews , Miguel Santana, Jr. , Alfredo Herrera
发明人： Charles R. Mathews , Miguel Santana, Jr. , Alfredo Herrera
IPC分类号： H01L2334
CPC分类号： H01L35/34 , H01L23/38 , H01L2924/0002 , Y10S257/93 , H01L2924/00
摘要： Various embodiments of a semiconductor-on-insulator substrate incorporating a Peltier effect heat transfer device and methods of fabricating the same are provided. In one aspect, a circuit device is provided that includes an insulating substrate, a semiconductor structure positioned on the insulating substrate and a Peltier effect heat transfer device coupled to the insulating substrate to transfer heat between the semiconductor structure and the insulating substrate.
摘要翻译：提供了包含珀尔帖效应传热装置的绝缘体上半导体衬底的各种实施例及其制造方法。一方面，提供了一种电路装置，其包括绝缘基板，位于绝缘基板上的半导体结构和耦合到该绝缘基板的珀尔帖效应传热装置，以在半导体结构和绝缘基板之间传递热量。

6. 发明授权

US06780664B1 Nanotube tip for atomic force microscope 失效
标题翻译：纳米管尖端用于原子力显微镜
公开(公告)号：US06780664B1
公开(公告)日：2004-08-24
申请号：US10324327
申请日：2002-12-20
申请人： Rama R. Goruganthu , Michael R. Bruce , Thomas Chu , Miguel Santana, Jr. , Robert Powell
发明人： Rama R. Goruganthu , Michael R. Bruce , Thomas Chu , Miguel Santana, Jr. , Robert Powell
IPC分类号： H01L2100
CPC分类号： G01Q70/12 , Y10S438/903 , Y10S977/876
摘要： Various microscopy probes and methods of fabricating the same are provided. In one aspect, a method of fabricating a microscopy probe is provided that includes providing a member and forming a first film on the member. The first film fosters growth of carbon nanotubes when exposed to a carbon-containing compound. A second film is formed on the first film. The second film has an opening therein that exposes a portion of the first film. A carbon nanotube is formed on the exposed portion of the first film.
摘要翻译：提供了各种显微镜探针及其制造方法。一方面，提供一种制造显微镜探针的方法，其包括提供构件并在构件上形成第一膜。当暴露于含碳化合物时，第一种膜促进碳纳米管的生长。在第一膜上形成第二膜。第二膜在其中具有露出第一膜的一部分的开口。在第一膜的暴露部分上形成碳纳米管。

7. 发明申请

US20100012828A1 Infrared Sensor and Method of Calibrating the Same 有权
标题翻译：红外传感器及其校准方法
公开(公告)号：US20100012828A1
公开(公告)日：2010-01-21
申请号：US12175304
申请日：2008-07-17
申请人： Seth Prejean , Miguel Santana, JR. , Ronald M. Potok
发明人： Seth Prejean , Miguel Santana, JR. , Ronald M. Potok
IPC分类号： G12B13/00
CPC分类号： G12B13/00
摘要： An infrared sensor system and a method of calibrating the system are disclosed. In one aspect, a method includes determining a transmission of a transmissive window and a transmission of a transmissive fluid. In addition, an infrared emission of the transmissive window is determined along with an infrared emission of the transmissive fluid for at least one temperature. In a system that has an infrared sensor and an optical pathway to the infrared sensor, the transmissive window and the transmissive fluid are placed in the optical pathway. A semiconductor chip is placed in the optical pathway proximate the transmissive fluid. Radiation from the optical pathway is measured with the infrared sensor. An emissivity of the semiconductor chip is determined using the measured radiation and the determined transmissions and emissions of the transmissive window and the transmissive fluid.
摘要翻译：公开了一种红外传感器系统和校准系统的方法。一方面，一种方法包括确定透射窗的透射和透射流体的透射。此外，透射窗的红外发射与至少一个温度的透射流体的红外发射一起确定。在具有红外传感器和到红外传感器的光路的系统中，透射窗和透射流体被放置在光路中。将半导体芯片放置在靠近透射流体的光学路径中。用红外线传感器测量光路径的辐射。使用所测量的辐射和所确定的透射窗和透射流体的透射和发射来确定半导体芯片的发射率。

8. 发明授权

US06994584B1 Thermally conductive integrated circuit mounting structures 有权
标题翻译：导热集成电路安装结构
公开(公告)号：US06994584B1
公开(公告)日：2006-02-07
申请号：US10231560
申请日：2002-08-30
申请人： Miguel Santana, Jr. , Michael Bruce , Thomas Chu , Rama R. Goruganthu , Robert Powell
发明人： Miguel Santana, Jr. , Michael Bruce , Thomas Chu , Rama R. Goruganthu , Robert Powell
IPC分类号： H01R13/00
CPC分类号： H01L23/3675 , B82Y10/00 , H01L23/055 , H01L23/145 , H01L23/373 , H01L24/48 , H01L2224/16 , H01L2224/45014 , H01L2224/48091 , H01L2224/48227 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/15312 , H01L2924/16152 , H01L2924/16195 , H01L2924/19041 , Y10S977/833 , H01L2924/00 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： Various devices for mounting circuit devices and methods of making the same are provided. In aspect, a device is provided that includes a member for holding an integrated circuit. The member contains a first plurality of carbon nanotubes to enhance the thermal conductivity thereof. At least one conductor member projects from the member. In another aspect, a method of fabricating an interface for an electronic component is provided that includes forming a member containing a first plurality of carbon nanotubes and forming at least one conductor on the member.
摘要翻译：提供了用于安装电路装置的各种装置及其制造方法。在一方面，提供一种包括用于保持集成电路的部件的装置。该构件包含第一多个碳纳米管以增强其导热性。至少有一个导体成员从该成员突出。在另一方面，提供一种制造电子部件的界面的方法，其包括形成包含第一多个碳纳米管并在所述部件上形成至少一个导体的部件。

9. 发明授权

US06828809B1 Photon detection enhancement of superconducting hot-electron photodetectors 失效
标题翻译：超导热电子探测器的光子检测增强
公开(公告)号：US06828809B1
公开(公告)日：2004-12-07
申请号：US10324324
申请日：2002-12-20
申请人： Michael R. Bruce , Robert Powell , Brennan Davis , Rama Goruganthu , Thomas Chu , Miguel Santana, Jr.
发明人： Michael R. Bruce , Robert Powell , Brennan Davis , Rama Goruganthu , Thomas Chu , Miguel Santana, Jr.
IPC分类号： G01R31302
CPC分类号： G01R31/308
摘要： Various methods of hot-electron imaging a workpiece are provided. In one aspect, a method of examining a workpiece is provided that includes directing a first photon at a photodetector at a first known time and stimulating a circuit device of the workpiece at a second known time to produce a condition in the circuit device conducive to photon emission. At least one photon emitted by the circuit device in response to the stimulation is detected. The first photon increases the quantum efficiency of the photodetector in detecting the at least one photon. The detection of the at least one photon relative to the first known time and the second known time is time correlated to temporally distinguish the first photon and the at least one photon and to temporally correlate the stimulation of the circuit device to the detection of the at least one photon.
摘要翻译：提供了对工件进行热电子成像的各种方法。在一个方面，提供了一种检查工件的方法，其包括在第一已知时间引导光电检测器处的第一光子并在第二已知时间刺激工件的电路装置，以产生有利于光子的电路器件中的状态排放。检测由电路装置响应于刺激而发射的至少一个光子。在检测至少一个光子时，第一光子增加了光电检测器的量子效率。相对于第一已知时间和第二已知时间的至少一个光子的检测是时间相关的，以便在时间上区分第一光子和至少一个光子，并且将电路装置的刺激与at 至少一个光子。

10. 发明授权

US5549786A Highly selective, highly uniform plasma etch process for spin-on glass 失效
标题翻译：用于旋涂玻璃的高选择性，高度均匀的等离子体蚀刻工艺
公开(公告)号：US5549786A
公开(公告)日：1996-08-27
申请号：US520758
申请日：1995-08-29
申请人： Stephen A. Jones , Shyam G. Garg , James F. Buller , Miguel Santana, Jr.
发明人： Stephen A. Jones , Shyam G. Garg , James F. Buller , Miguel Santana, Jr.
IPC分类号： H01L21/311 , H01L21/00
CPC分类号： H01L21/31116
摘要： An SOG plasma etch process is presented which is optimized for selectivity to PECVD silicon nitride. The present process also produces a uniform etch across the exposed surface of a semiconductor wafer. The etch process finds utility in dielectric-SOG-dielectric structures used as passivation layers. Silicon nitride is deposited using a PECVD technique to form the dielectric layers. By etching SOG at a faster rate than the rate at which it etches PECVD silicon nitride, the SOG plasma etch process removes enough of the SOG layer to prevent delamination problems associated with SOG layers interposed between dielectric layers without significantly reducing the thickness of the first dielectric layer. SOG remains only in troughs between closely-spaced interconnects and adjacent to the vertical steps between widely-spaced interconnects. Flow rates of He, CHF.sub.3, and N.sub.2 gases are established through a reaction chamber of a plasma etch system. The method includes pre-stabilizing steps, followed by an etch step, which is then followed by a post-stabilizing step and a particle removal or by-product flush step.
摘要翻译：提出了针对PECVD氮化硅的选择性优化的SOG等离子体蚀刻工艺。本方法还在半导体晶片的暴露表面上产生均匀蚀刻。蚀刻工艺在用作钝化层的介电SOG介电结构中发挥作用。使用PECVD技术沉积氮化硅以形成电介质层。通过以比其蚀刻PECVD氮化硅的速率更快的速率蚀刻SOG，SOG等离子体蚀刻工艺去除足够的SOG层，以防止与介于介电层之间的SOG层相关的分层问题，而不显着地减小第一电介质的厚度层。 SOG仅保留在紧密间隔的互连之间的槽中，并且与广泛间隔的互连之间的垂直台阶相邻。通过等离子体蚀刻系统的反应室建立He，CHF 3和N 2气体的流速。该方法包括预稳定步骤，随后是蚀刻步骤，然后进行后稳定化步骤和颗粒去除或副产物冲洗步骤。

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