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1. 发明授权

US09627281B2 Semiconductor chip with thermal interface tape 有权
公开(公告)号：US09627281B2
公开(公告)日：2017-04-18
申请号：US12860256
申请日：2010-08-20
申请人： Seth Prejean , Dales Kent , Ronnie Brandon , Gamal Refai-Ahmed , Michael Z. Su , Michael Bienek , Joseph Siegel , Bryan Black
发明人： Seth Prejean , Dales Kent , Ronnie Brandon , Gamal Refai-Ahmed , Michael Z. Su , Michael Bienek , Joseph Siegel , Bryan Black
IPC分类号： H01L23/58 , H01L21/66 , H01L21/56 , H01L21/683 , H01L25/065 , H01L23/42
CPC分类号： H01L22/20 , H01L21/563 , H01L21/6835 , H01L21/6836 , H01L22/14 , H01L23/42 , H01L25/0657 , H01L2221/68327 , H01L2221/68386 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/81002 , H01L2224/81815 , H01L2224/831 , H01L2225/06513 , H01L2225/06517 , H01L2225/06565 , H01L2924/01019 , H01L2924/01079 , H01L2924/014 , H01L2924/00
摘要： A method of manufacturing is provided that includes applying a thermal interface tape to a side of a semiconductor wafer that includes at least one semiconductor chip. The thermal interface material tape is positioned on the at least one semiconductor chip. The at least one semiconductor chip is singulated from the semiconductor wafer with at least a portion of the thermal interface tape still attached to the semiconductor chip.

2. 发明授权

US07795589B2 Infrared sensor and method of calibrating the same 有权
标题翻译：红外传感器及其校准方法
公开(公告)号：US07795589B2
公开(公告)日：2010-09-14
申请号：US12175304
申请日：2008-07-17
申请人： Seth Prejean , Miguel Santana, Jr. , Ronald M. Potok
发明人： Seth Prejean , Miguel Santana, Jr. , Ronald M. Potok
IPC分类号： G01J5/02
CPC分类号： G12B13/00
摘要： A method includes determining a transmission of a transmissive window and a transmission of a transmissive fluid. In addition, an infrared emission of the transmissive window is determined along with an infrared emission of the transmissive fluid for at least one temperature. In a system that has an infrared sensor and an optical pathway to the infrared sensor, the transmissive window and the transmissive fluid are placed in the optical pathway. A semiconductor chip is placed in the optical pathway proximate the transmissive fluid. Radiation from the optical pathway is measured with the infrared sensor. An emissivity of the semiconductor chip is determined using the measured radiation and the determined transmissions and emissions of the transmissive window and the transmissive fluid.
摘要翻译：一种方法包括确定透射窗的透射和透射流体的透射。此外，透射窗的红外发射与至少一个温度的透射流体的红外发射一起确定。在具有红外传感器和到红外传感器的光路的系统中，透射窗和透射流体被放置在光路中。将半导体芯片放置在靠近透射流体的光学路径中。用红外线传感器测量光路径的辐射。使用所测量的辐射和所确定的透射窗和透射流体的透射和发射来确定半导体芯片的发射率。

3. 发明授权

US09437561B2 Semiconductor chip with redundant thru-silicon-vias 有权
标题翻译：半导体芯片具有冗余的硅通孔
公开(公告)号：US09437561B2
公开(公告)日：2016-09-06
申请号：US12878542
申请日：2010-09-09
申请人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
发明人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
IPC分类号： H01L21/4763 , H01L23/00 , H01L23/48
CPC分类号： H01L25/0657 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/0233 , H01L2224/02331 , H01L2224/0401 , H01L2224/05022 , H01L2224/05095 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05169 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/06181 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/17181 , H01L2225/06548 , H01L2924/00014 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/351 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
摘要翻译：公开了一种具有导电孔的半导体芯片及其制造方法。该方法包括在第一半导体芯片的层中形成第一多个导电通孔。第一多个导电通孔包括第一端和第二端。第一导体焊盘与第一多个导电通孔的第一端欧姆接触形成。

4. 发明申请

US20120043539A1 SEMICONDUCTOR CHIP WITH THERMAL INTERFACE TAPE 有权
标题翻译：带有热接口带的半导体芯片
公开(公告)号：US20120043539A1
公开(公告)日：2012-02-23
申请号：US12860256
申请日：2010-08-20
申请人： Seth Prejean , Dales Kent , Ronnie Brandon , Gamal Refai-Ahmed , Michael Z. Su , Michael Bienek , Joseph Siegel , Bryan Black
发明人： Seth Prejean , Dales Kent , Ronnie Brandon , Gamal Refai-Ahmed , Michael Z. Su , Michael Bienek , Joseph Siegel , Bryan Black
IPC分类号： H01L23/34 , H01L21/66
CPC分类号： H01L22/20 , H01L21/563 , H01L21/6835 , H01L21/6836 , H01L22/14 , H01L23/42 , H01L25/0657 , H01L2221/68327 , H01L2221/68386 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/73253 , H01L2224/81002 , H01L2224/81815 , H01L2224/831 , H01L2225/06513 , H01L2225/06517 , H01L2225/06565 , H01L2924/01019 , H01L2924/01079 , H01L2924/014 , H01L2924/00
摘要： A method of manufacturing is provided that includes applying a thermal interface tape to a side of a semiconductor wafer that includes at least one semiconductor chip. The thermal interface material tape is positioned on the at least one semiconductor chip. The at least one semiconductor chip is singulated from the semiconductor wafer with at least a portion of the thermal interface tape still attached to the semiconductor chip.
摘要翻译：提供了一种制造方法，其包括将热界面带施加到包括至少一个半导体芯片的半导体晶片的侧面。热界面材料带位于至少一个半导体芯片上。至少一个半导体芯片从半导体晶片分离，其中至少一部分热界面带仍然附着到半导体芯片上。

5. 发明申请

US20160365335A1 SEMICONDUCTOR CHIP WITH REDUNDANT THRU-SILICON-VIAS 审中-公开
标题翻译：半导体芯片与冗余硅玻璃
公开(公告)号：US20160365335A1
公开(公告)日：2016-12-15
申请号：US15247259
申请日：2016-08-25
申请人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
发明人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
IPC分类号： H01L25/065 , H01L23/00
CPC分类号： H01L25/0657 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/0233 , H01L2224/02331 , H01L2224/0401 , H01L2224/05022 , H01L2224/05095 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05169 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/06181 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/17181 , H01L2225/06548 , H01L2924/00014 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/351 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
摘要翻译：公开了一种具有导电孔的半导体芯片及其制造方法。该方法包括在第一半导体芯片的层中形成第一多个导电通孔。第一多个导电通孔包括第一端和第二端。第一导体焊盘与第一多个导电通孔的第一端欧姆接触形成。

6. 发明申请

US20120061821A1 SEMICONDUCTOR CHIP WITH REDUNDANT THRU-SILICON-VIAS 有权
标题翻译：半导体芯片与冗余硅玻璃
公开(公告)号：US20120061821A1
公开(公告)日：2012-03-15
申请号：US12878542
申请日：2010-09-09
申请人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
发明人： Bryan Black , Michael Z. Su , Gamal Refai-Ahmed , Joe Siegel , Seth Prejean
IPC分类号： H01L23/498 , H01L23/48 , H01L21/768
CPC分类号： H01L25/0657 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L2224/0233 , H01L2224/02331 , H01L2224/0401 , H01L2224/05022 , H01L2224/05095 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05169 , H01L2224/05567 , H01L2224/0557 , H01L2224/05572 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05669 , H01L2224/06181 , H01L2224/13022 , H01L2224/13025 , H01L2224/131 , H01L2224/17181 , H01L2225/06548 , H01L2924/00014 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/351 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.
摘要翻译：公开了一种具有导电孔的半导体芯片及其制造方法。该方法包括在第一半导体芯片的层中形成第一多个导电通孔。第一多个导电通孔包括第一端和第二端。第一导体焊盘与第一多个导电通孔的第一端欧姆接触形成。

7. 发明申请

US20100012828A1 Infrared Sensor and Method of Calibrating the Same 有权
标题翻译：红外传感器及其校准方法
公开(公告)号：US20100012828A1
公开(公告)日：2010-01-21
申请号：US12175304
申请日：2008-07-17
申请人： Seth Prejean , Miguel Santana, JR. , Ronald M. Potok
发明人： Seth Prejean , Miguel Santana, JR. , Ronald M. Potok
IPC分类号： G12B13/00
CPC分类号： G12B13/00
摘要： An infrared sensor system and a method of calibrating the system are disclosed. In one aspect, a method includes determining a transmission of a transmissive window and a transmission of a transmissive fluid. In addition, an infrared emission of the transmissive window is determined along with an infrared emission of the transmissive fluid for at least one temperature. In a system that has an infrared sensor and an optical pathway to the infrared sensor, the transmissive window and the transmissive fluid are placed in the optical pathway. A semiconductor chip is placed in the optical pathway proximate the transmissive fluid. Radiation from the optical pathway is measured with the infrared sensor. An emissivity of the semiconductor chip is determined using the measured radiation and the determined transmissions and emissions of the transmissive window and the transmissive fluid.
摘要翻译：公开了一种红外传感器系统和校准系统的方法。一方面，一种方法包括确定透射窗的透射和透射流体的透射。此外，透射窗的红外发射与至少一个温度的透射流体的红外发射一起确定。在具有红外传感器和到红外传感器的光路的系统中，透射窗和透射流体被放置在光路中。将半导体芯片放置在靠近透射流体的光学路径中。用红外线传感器测量光路径的辐射。使用所测量的辐射和所确定的透射窗和透射流体的透射和发射来确定半导体芯片的发射率。

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