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    • 1. 发明授权
    • Photon detection enhancement of superconducting hot-electron photodetectors
    • 超导热电子探测器的光子检测增强
    • US06828809B1
    • 2004-12-07
    • US10324324
    • 2002-12-20
    • Michael R. BruceRobert PowellBrennan DavisRama GoruganthuThomas ChuMiguel Santana, Jr.
    • Michael R. BruceRobert PowellBrennan DavisRama GoruganthuThomas ChuMiguel Santana, Jr.
    • G01R31302
    • G01R31/308
    • Various methods of hot-electron imaging a workpiece are provided. In one aspect, a method of examining a workpiece is provided that includes directing a first photon at a photodetector at a first known time and stimulating a circuit device of the workpiece at a second known time to produce a condition in the circuit device conducive to photon emission. At least one photon emitted by the circuit device in response to the stimulation is detected. The first photon increases the quantum efficiency of the photodetector in detecting the at least one photon. The detection of the at least one photon relative to the first known time and the second known time is time correlated to temporally distinguish the first photon and the at least one photon and to temporally correlate the stimulation of the circuit device to the detection of the at least one photon.
    • 提供了对工件进行热电子成像的各种方法。 在一个方面,提供了一种检查工件的方法,其包括在第一已知时间引导光电检测器处的​​第一光子并在第二已知时间刺激工件的电路装置,以产生有利于光子的电路器件中的状态 排放。 检测由电路装置响应于刺激而发射的至少一个光子。 在检测至少一个光子时,第一光子增加了光电检测器的量子效率。 相对于第一已知时间和第二已知时间的至少一个光子的检测是时间相关的,以便在时间上区分第一光子和至少一个光子,并且将电路装置的刺激与at 至少一个光子。
    • 4. 发明授权
    • Selective back side wet etch
    • 选择性背面湿蚀刻
    • US06428718B1
    • 2002-08-06
    • US09383670
    • 1999-08-26
    • Jeffrey BirdsleyBrennan Davis
    • Jeffrey BirdsleyBrennan Davis
    • H01L21302
    • G01N1/32G01N2033/0095
    • According to an example embodiment, a semiconductor device having a back side and a circuit side opposite the back side is analyzed. The semiconductor device includes bulk silicon in the back side and also includes epitaxial silicon. A wet etch solution comprising aqueous tetramethylammonium hydroxide (TMAHW) is directed at the back side. Using the wet etch solution, the back side is selectively etched and an exposed region is formed. The etching is selective to the bulk silicon. When the etching process encounters the epitaxial silicon, the etch rate slows and is used as an endpoint indicator of the selective etching process. Once the etching process is stopped, the circuitry is accessed via the exposed region.
    • 根据示例性实施例,分析了具有背侧和与背面相反的电路侧的半导体器件。 半导体器件包括背面的体硅,并且还包括外延硅。 包含四甲基氢氧化铵(TMAHW)的湿蚀刻溶液指向背面。 使用湿蚀刻溶液,选择性地蚀刻背面并形成曝光区域。 蚀刻对体硅有选择性。 当蚀刻工艺遇到外延硅时,蚀刻速率减慢并被用作选择性蚀刻工艺的端点指示器。 一旦蚀刻过程停止,电路就通过暴露的区域被访问。