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1. 发明申请

US20040224610A1 CMP belt stretch compensation apparatus and methods for using the same 失效
标题翻译： CMP带拉伸补偿装置及其使用方法
公开(公告)号：US20040224610A1
公开(公告)日：2004-11-11
申请号：US10864031
申请日：2004-06-08
申请人： Lam Research Corp.
发明人： Yehiel Gotkis , David Wei , Aleksander Owzarz
IPC分类号： B24B049/00
CPC分类号： B24B37/04 , B24B21/04 , B24B21/20
摘要： An apparatus for reducing non-uniform stretch of a belt used in the CMP system is disclosed. The belt that may be used with the apparatus extends between a first roller and a second roller to define a belt loop with an inner surface and an outer surface to be used for CMP. The apparatus includes a compensating roller that has a first end and a second end where the first end and second end extends a width of the belt. The first end and the second end have a first diameter. The center of the roller has a second diameter that is less than the first diameter. The compensating roller has a symmetrically tapered shape that extends between each of the first end and second end to the center. The compensating roller is positioned inside of the belt loop, and is applied to the inner surface of the belt loop to reduce non-uniform stretch of the belt.
摘要翻译：公开了一种用于减小在CMP系统中使用的带的不均匀拉伸的装置。可以与该装置一起使用的带在第一辊和第二辊之间延伸以限定具有用于CMP的内表面和外表面的带环。该装置包括补偿辊，该补偿辊具有第一端和第二端，其中第一端和第二端延伸带的宽度。第一端和第二端具有第一直径。辊的中心具有小于第一直径的第二直径。补偿辊具有对称渐缩的形状，其在第一端和第二端的每一端之间延伸到中心。补偿辊位于皮带环的内侧，并被施加到皮带环的内表面以减少皮带的不均匀拉伸。

2. 发明申请

US20040119468A1 METHOD AND APPARATUS FOR METROLOGICAL PROCESS CONTROL IMPLEMENTING COMPLIMENTARY SENSORS 失效
标题翻译：方法和装置实施综合传感器的方法过程控制
公开(公告)号：US20040119468A1
公开(公告)日：2004-06-24
申请号：US10328884
申请日：2002-12-23
申请人： LAM RESEARCH CORP.
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
IPC分类号： G01B007/06 , G01R033/12
CPC分类号： H01L22/26
摘要： A method for detecting a thickness of a layer of a wafer is provided. The method includes defining a particular radius of a wafer carrier configured to engage the wafer to be processed. The method also includes providing a plurality of sensors configured to create a set of complementary sensors. Further included in the method is distributing the plurality of sensors along the particular radius within the wafer carrier such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.
摘要翻译：提供了一种用于检测晶片层的厚度的方法。该方法包括限定配置成接合要处理的晶片的晶片载体的特定半径。该方法还包括提供配置成创建一组互补传感器的多个传感器。该方法还包括沿着晶片载体内的特定半径分布多个传感器，使得多个传感器中的每个传感器与相邻的传感器相位相同角度。该方法还包括测量由多个传感器产生的信号。还包括对由多个传感器产生的信号进行平均以产生组合信号。平均化被配置为从组合信号去除噪声，使得组合信号能够被相关联以识别层的厚度。

3. 发明申请

US20040060581A1 Vertical proximity processor 失效
标题翻译：垂直接近处理器
公开(公告)号：US20040060581A1
公开(公告)日：2004-04-01
申请号：US10404270
申请日：2003-03-31
申请人： Lam Research Corp.
发明人： James P. Garcia , Mike Ravkin , Carl Woods , Fred C. Redeker , John de Larios
IPC分类号： B08B003/00
CPC分类号： C25D5/22 , B08B3/04 , C25D17/001 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/68707 , Y10S134/902
摘要： A method for processing a substrate is provided which includes generating a fluid meniscus on the surface of the vertically oriented substrate, and moving the fluid meniscus over the surface of the vertically oriented substrate to process the surface of the substrate.
摘要翻译：提供了一种用于处理衬底的方法，其包括在垂直取向的衬底的表面上产生流体弯月面，并且使流体弯月面在垂直取向衬底的表面上移动以处理衬底的表面。

4. 发明申请

US20040016895A1 IN-SITU DETECTION OF THIN-METAL INTERFACE USING OPTICAL INTERFERENCE VIA A DYNAMICALLY UPDATED REFERENCE 失效
标题翻译：使用光学干涉进行的金属界面的现场检测通过动态更新的参考
公开(公告)号：US20040016895A1
公开(公告)日：2004-01-29
申请号：US09976442
申请日：2001-10-12
申请人： LAM Research Corp.
发明人： Sundar Amartur
IPC分类号： G01V008/00
CPC分类号： B24B49/04 , B24B37/013 , B24B49/12
摘要： An invention for detecting an endpoint during a chemical mechanical polishing (CMP) process is provided. A reflected spectrum data sample is received that corresponds to a plurality of spectrums of light reflected from an illuminated portion of the surface of a wafer. The reflected spectrum data sample is normalized using a normalization reference comprising a first reflected spectrum data sample obtained earlier during the CMP process. In addition, the normalization reference is updated during the process using a second reflected spectrum data sample obtained earlier during the CMP process. The second reflected spectrum data sample is obtained after the first reflected spectrum data sample. In this manner, an endpoint is determined based on optical interference occurring in the reflected spectrum data.
摘要翻译：提供了一种用于在化学机械抛光（CMP）工艺期间检测端点的发明。接收对应于从晶片的表面的照射部分反射的多个光谱的反射光谱数据样本。使用包括在CMP过程中较早获得的第一反射光谱数据样本的归一化参考来对反射光谱数据样本进行归一化。另外，使用在CMP工艺中较早获得的第二反射光谱数据样本，在该过程期间更新归一化参考。在第一反射光谱数据样本之后获得第二反射光谱数据样本。以这种方式，基于在反射光谱数据中发生的光学干涉来确定端点。

5. 发明申请

US20040002291A1 Partial-membrane carrier head 失效
标题翻译：部分膜载体头
公开(公告)号：US20040002291A1
公开(公告)日：2004-01-01
申请号：US10186888
申请日：2002-06-28
申请人： LAM Research Corp.
发明人： Peter Renteln
IPC分类号： B24B001/00 , B24B007/19
CPC分类号： B24B37/30 , B24B21/04
摘要： An invention is provided for a carrier head that includes a metal plate having an opening formed in a central location. The metal plate has a wafer side, which faces the backside of a wafer during a CMP operation, and a non-wafer side. Positioned above the non-wafer side of the metal plate, and located above the opening in the metal plate, is a bladder or membrane. To facilitate uniformity during polishing, an inflating pressure is applied to the bladder, or membrane, that is substantially equivalent to a polishing pressure utilized during the CMP operation. To facilitate transporting the wafer, a vacuum can be applied to the opening in the metal plate to adhere the wafer to the carrier head. Further, to release the wafer from the carrier head, the bladder, or membrane, can be inflated such that it protrudes through the opening in the metal plate.
摘要翻译：本发明提供一种载体头，其包括金属板，该金属板具有形成在中心位置的开口。金属板在CMP操作期间具有面向晶片的背面的晶片侧和非晶片侧。位于金属板的非晶片侧上方并且位于金属板的开口上方的是气囊或膜。为了促进抛光过程中的均匀性，对囊或膜施加充气压力，其基本上等于在CMP操作期间使用的抛光压力。为了便于输送晶片，可以向金属板中的开口施加真空以将晶片粘附到载体头上。此外，为了从载体头部释放晶片，可以将囊或膜膨胀，使得其突出穿过金属板中的开口。

6. 发明申请

US20030124856A1 Methods and apparatus for conditioning and temperature control of a processing surface 失效
公开(公告)号：US20030124856A1
公开(公告)日：2003-07-03
申请号：US10041027
申请日：2001-12-28
申请人： LAM RESEARCH CORP.
发明人： Emil A. Kneer
IPC分类号： H01L021/461 , H01L021/302
CPC分类号： B24B53/017 , B24B21/04 , B24B49/14 , B24B53/047 , H01L21/30625
摘要： Methods and apparatus for controlling the temperature of a process surface and for conditioning of a process surface are provided. In one example, a temperature controller is described within a CMP system. The CMP system has a first roller and a second roller and a linear belt circulating around the first and second rollers. The linear belt has a width that spans between a first edge and a second edge. The temperature controller includes an array of thermal elements. Each of the thermal elements of the array is independently controlled. The array of thermal elements is positioned between the first roller and the second roller and configured to contact a back surface of the linear belt. The array of thermal elements extends between the first edge and the second edge of the linear belt width.

7. 发明申请

US20020184720A1 Integrated substrate processing system 有权
标题翻译：集成基板处理系统
公开(公告)号：US20020184720A1
公开(公告)日：2002-12-12
申请号：US10211714
申请日：2002-08-01
申请人： Lam Research Corp.
发明人： David T. Frost , Oliver David Jones , Mike Wallis
IPC分类号： B08B007/04
CPC分类号： H01L21/67178 , H01L21/67028 , H01L21/67046 , H01L21/67057 , H01L21/67207 , H01L21/67745 , Y10S134/902
摘要： A system and methods for substrate preparation are provided. In one example, a wafer processing system includes a system enclosure that contains wafer processing apparatus within an isolated wafer processing environment. The wafer processing apparatus include a pair of immersion tanks in the lower front region of the system with a pair of wafer pickers behind the immersion tanks to extract wafers from the tanks. In the rear of the system, a pair of brush boxes are located in a lower region with a pair of dryer units positioned above the brush boxes. A robot arm is positioned between the pair of immersion tanks and the pair of brush boxes in a middle region of the system, and is configured to transition wafers between the processing apparatus. A pair of output shelves holding output cassettes is positioned over the immersion tanks. The output cassettes receive clean wafers after processing. In another example, a method for preparing a substrate is provided. The method includes the batch processing of substrates through substrate processing apparatus arranged within a substrate processing system.
摘要翻译：提供了一种用于底物制备的系统和方法。在一个示例中，晶片处理系统包括在隔离晶片处理环境内包含晶片处理装置的系统外壳。晶片处理装置包括在系统的下前部区域中的一对浸没池，在浸没池之后具有一对晶片拾取器，以从罐中提取晶片。在系统的后部，一对刷盒位于下部区域中，一对干燥器单元位于刷盒的上方。机器人臂位于系统的中间区域中的一对浸入池和一对刷盒之间，并且被配置为在处理装置之间转移晶片。保持输出盒的一对输出架被放置在浸没池的上方。输出盒在处理后接收干净的晶圆。在另一个实例中，提供了制备衬底的方法。该方法包括通过设置在基板处理系统内的基板处理装置批量处理基板。

8. 发明申请

US20020070371A1 Methods of implementing a single shaft, dual cradle vacuum slot valve 有权
标题翻译：实现单轴双座真空槽阀的方法
公开(公告)号：US20020070371A1
公开(公告)日：2002-06-13
申请号：US10059923
申请日：2002-01-28
申请人： Lam Research Corp.
发明人： Tony R. Kroeker , Gregory A. Tomasch
IPC分类号： B65G001/00 , F16K003/00
CPC分类号： F16K51/02 , F16K3/188 , Y10T137/0514
摘要： A single slot valve shaft is in a vacuum body between adjacent vacuum chambers, such as a process module and a transport module. Separate valves are provided on the single shaft actuator for each of two valve body slots, each body slot being closed or opened according to the position of the single shaft. The separate valves allow a vacuum condition to be maintained in the transport module while an adjacent process module is open to the atmosphere for servicing. The single shaft allows access to an open valve for servicing the open valve by way of stops that limit drive travel and hold the valve in an open, but not vertically-spaced, position relative to a respective slot. The open valve is easily reached by a gloved hand of a service worker. The single shaft is mounted on a first cradle, and the first cradle is mounted on a second cradle. Two separate shaft drives move the two cradles to position the single shaft to locate the valves between the slots to open one slot and close the other slot. Another separate shaft drive moves the single shaft vertically down from the open position and away from the slots to expose seal surfaces around the slots for cleaning.
摘要翻译：单个槽阀轴位于相邻真空室之间的真空体内，例如处理模块和运输模块。在单个轴致动器上为两个阀体槽中的每一个设置单独的阀，每个主体槽根据单个轴的位置关闭或打开。单独的阀允许在运输模块中保持真空状态，而相邻的处理模块对大气开放以进行维修。单个轴允许进入打开的阀门，以便通过限制驱动行程的止动件来维修打开的阀，并且将阀保持在相对于相应的槽的打开但不垂直间隔的位置。打开的阀门很容易通过服务人员的戴手套的手来到达。单个轴安装在第一个支架上，第一个支架安装在第二个支架上。两个单独的轴驱动器移动两个支架以定位单个轴以将阀定位在槽之间以打开一个槽并关闭另一个槽。另一个单独的轴驱动器将单个轴从打开位置垂直向下移动并远离槽，以暴露槽周围的密封表面以进行清洁。

9. 发明申请

US20040235399A1 Method using active retainer rings for improving edge performance in CMP applications 失效
标题翻译：使用主动保持环的方法，以改善CMP应用中的边缘性能
公开(公告)号：US20040235399A1
公开(公告)日：2004-11-25
申请号：US10874415
申请日：2004-06-22
申请人： LAM Research Corp.
发明人： Alek Owczarz , John Boyd , Rod Kistler
IPC分类号： B24B001/00
CPC分类号： B24B37/32 , B24B21/04
摘要： An invention improves edge performance in chemical mechanical polishing processes. A method operation provides a wafer head above a wafer. The wafer head includes a first active retaining ring capable of extension and retraction. Another operation provides a polishing belt below the wafer head, and provides below the polishing belt a platen having a second active retaining ring capable of extension and retraction. Another operation controls positions of the first active retaining ring and the second active retaining ring to provide positional control for the polishing belt, thus adjusting and controlling the removal rate at the edge of the wafer.
摘要翻译：一种发明改善了化学机械抛光工艺中的边缘性能。方法操作在晶片上方提供晶片头。晶片头包括能够延伸和缩回的第一主动保持环。另一个操作提供在晶片头下方的抛光带，并且在抛光带的下方提供具有能够延伸和缩回的第二主动保持环的压板。另一个操作控制第一主动保持环和第二主动保持环的位置，以提供抛光带的位置控制，从而调节和控制晶片边缘的去除速率。

10. 发明申请

US20040178060A1 Apparatus and method for depositing and planarizing thin films of semiconductor wafers 失效
标题翻译：用于沉积和平坦化半导体晶片的薄膜的装置和方法
公开(公告)号：US20040178060A1
公开(公告)日：2004-09-16
申请号：US10607611
申请日：2003-06-27
申请人： Lam Research Corp.
发明人： Mike Ravkin , John Boyd , Yezdi N. Dordi , Fred C. Redeker , John M. de Larios
IPC分类号： C25D017/00
CPC分类号： C25D17/10 , C25D5/026 , C25D5/22 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： An electroplating apparatus for depositing a metallic layer on a surface of a wafer is provided. In one example, a proximity head capable of being electrically charged as an anode is placed in close proximity to the surface of the wafer. A plating fluid is provided between the wafer and the proximity head to create localized metallic plating.
摘要翻译：提供了一种用于在晶片的表面上沉积金属层的电镀设备。在一个示例中，能够被充电作为阳极的接近头放置在紧邻晶片表面的位置。在晶片和邻近头之间提供电镀液以产生局部金属电镀。

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