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    • 1. 发明申请
    • CMP belt stretch compensation apparatus and methods for using the same
    • CMP带拉伸补偿装置及其使用方法
    • US20040224610A1
    • 2004-11-11
    • US10864031
    • 2004-06-08
    • Lam Research Corp.
    • Yehiel GotkisDavid WeiAleksander Owzarz
    • B24B049/00
    • B24B37/04B24B21/04B24B21/20
    • An apparatus for reducing non-uniform stretch of a belt used in the CMP system is disclosed. The belt that may be used with the apparatus extends between a first roller and a second roller to define a belt loop with an inner surface and an outer surface to be used for CMP. The apparatus includes a compensating roller that has a first end and a second end where the first end and second end extends a width of the belt. The first end and the second end have a first diameter. The center of the roller has a second diameter that is less than the first diameter. The compensating roller has a symmetrically tapered shape that extends between each of the first end and second end to the center. The compensating roller is positioned inside of the belt loop, and is applied to the inner surface of the belt loop to reduce non-uniform stretch of the belt.
    • 公开了一种用于减小在CMP系统中使用的带的不均匀拉伸的装置。 可以与该装置一起使用的带在第一辊和第二辊之间延伸以限定具有用于CMP的内表面和外表面的带环。 该装置包括补偿辊,该补偿辊具有第一端和第二端,其中第一端和第二端延伸带的宽度。 第一端和第二端具有第一直径。 辊的中心具有小于第一直径的第二直径。 补偿辊具有对称渐缩的形状,其在第一端和第二端的每一端之间延伸到中心。 补偿辊位于皮带环的内侧,并被施加到皮带环的内表面以减少皮带的不均匀拉伸。
    • 2. 发明申请
    • METHOD AND APPARATUS FOR METROLOGICAL PROCESS CONTROL IMPLEMENTING COMPLIMENTARY SENSORS
    • 方法和装置实施综合传感器的方法过程控制
    • US20040119468A1
    • 2004-06-24
    • US10328884
    • 2002-12-23
    • LAM RESEARCH CORP.
    • Yehiel GotkisRodney KistlerAleksander OwczarzDavid HemkerNicolas J. Bright
    • G01B007/06G01R033/12
    • H01L22/26
    • A method for detecting a thickness of a layer of a wafer is provided. The method includes defining a particular radius of a wafer carrier configured to engage the wafer to be processed. The method also includes providing a plurality of sensors configured to create a set of complementary sensors. Further included in the method is distributing the plurality of sensors along the particular radius within the wafer carrier such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.
    • 提供了一种用于检测晶片层的厚度的方法。 该方法包括限定配置成接合要处理的晶片的晶片载体的特定半径。 该方法还包括提供配置成创建一组互补传感器的多个传感器。 该方法还包括沿着晶片载体内的特定半径分布多个传感器,使得多个传感器中的每个传感器与相邻的传感器相位相同角度。 该方法还包括测量由多个传感器产生的信号。 还包括对由多个传感器产生的信号进行平均以产生组合信号。 平均化被配置为从组合信号去除噪声,使得组合信号能够被相关联以识别层的厚度。