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1. 发明申请

US20040119468A1 METHOD AND APPARATUS FOR METROLOGICAL PROCESS CONTROL IMPLEMENTING COMPLIMENTARY SENSORS 失效
标题翻译：方法和装置实施综合传感器的方法过程控制
公开(公告)号：US20040119468A1
公开(公告)日：2004-06-24
申请号：US10328884
申请日：2002-12-23
申请人： LAM RESEARCH CORP.
发明人： Yehiel Gotkis , Rodney Kistler , Aleksander Owczarz , David Hemker , Nicolas J. Bright
IPC分类号： G01B007/06 , G01R033/12
CPC分类号： H01L22/26
摘要： A method for detecting a thickness of a layer of a wafer is provided. The method includes defining a particular radius of a wafer carrier configured to engage the wafer to be processed. The method also includes providing a plurality of sensors configured to create a set of complementary sensors. Further included in the method is distributing the plurality of sensors along the particular radius within the wafer carrier such that each sensor of the plurality of sensors is out of phase with an adjacent sensor by a same angle. The method also includes measuring signals generated by the plurality of sensors. Further included is averaging the signals generated by the plurality of sensors so as to generate a combination signal. The averaging is configured to remove noise from the combination signal such that the combination signal is capable of being correlated to identify the thickness of the layer.
摘要翻译：提供了一种用于检测晶片层的厚度的方法。该方法包括限定配置成接合要处理的晶片的晶片载体的特定半径。该方法还包括提供配置成创建一组互补传感器的多个传感器。该方法还包括沿着晶片载体内的特定半径分布多个传感器，使得多个传感器中的每个传感器与相邻的传感器相位相同角度。该方法还包括测量由多个传感器产生的信号。还包括对由多个传感器产生的信号进行平均以产生组合信号。平均化被配置为从组合信号去除噪声，使得组合信号能够被相关联以识别层的厚度。

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