专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050000410A1 Manufacturing method of high resistivity silicon single crystal 有权
标题翻译：高电阻率硅单晶的制造方法
公开(公告)号：US20050000410A1
公开(公告)日：2005-01-06
申请号：US10828555
申请日：2004-04-21
申请人： Nobumitsu Takase , Hideshi Nishikawa , Makoto Ito , Kouji Sueoka , Shinsuke Sadamitsu
发明人： Nobumitsu Takase , Hideshi Nishikawa , Makoto Ito , Kouji Sueoka , Shinsuke Sadamitsu
IPC分类号： C30B15/00 , C30B29/06 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/06 , C30B15/00
摘要： To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high resistivity silicon single crystal in the range of from 100 to 2000 Ω cm with a CZ method. In a case where poly-silicon produced with a Siemens method using trichlorosilane as raw material is used as the silicon raw material, an impurity concentration in the silicon raw material is selected so as to be controlled in the range of from −5 to 50 ppta method in terms of (a donor concentration—an acceptor concentration) and the selected poly-silicon is used. In a case of a MCZ method, the poly-silicon is selected in the range of from −25 to 20 ppta and the selected poly-silicon is used. Instead of the raw material, poly-silicon produced with a Siemens method using monosilane as raw material is used. Alternatively, a silicon crystal manufactured with a CZ method or a MCZ method using poly-silicon raw material is used.
摘要翻译：为了抑制围绕目标值的电阻率的波动，从而在将硅原料熔融以制造范围为100的高电阻率硅单晶的制造方法中稳定地制造具有几乎相同的电阻率值的高电阻率硅单晶到2000欧米加厘米与CZ方法。在使用以三氯硅烷为原料的西门子方法制造的多晶硅作为硅原料的情况下，选择硅原料中的杂质浓度以控制在-5〜50ppta的范围内使用（供体浓度 - 受体浓度）和选择的多晶硅的方法。在MCZ方法的情况下，多晶硅的选择范围为-25〜20ppta，使用所选择的多晶硅。使用以硅烷为原料的西门子法生产的多晶硅代替原料。或者，使用以CZ法制造的硅晶体或使用多晶硅原料的MCZ法。

2. 发明授权

US06641888B2 Silicon single crystal, silicon wafer, and epitaxial wafer. 有权
标题翻译：硅单晶，硅晶片和外延晶片。
公开(公告)号：US06641888B2
公开(公告)日：2003-11-04
申请号：US10055340
申请日：2002-01-25
申请人： Eiichi Asayama , Masataka Horai , Shigeru Umeno , Shinsuke Sadamitsu , Yasuo Koike , Kouji Sueoka , Hisashi Katahama
发明人： Eiichi Asayama , Masataka Horai , Shigeru Umeno , Shinsuke Sadamitsu , Yasuo Koike , Kouji Sueoka , Hisashi Katahama
IPC分类号： C30B2906
CPC分类号： C30B15/00 , C30B29/06 , Y10T428/21
摘要： There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016−5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment.
摘要翻译：提供了具有适合于大规模集成器件的足够的吸气效应的硅单晶，硅晶片和外延晶片。适用于外延晶片的硅单晶以1×10 13原子/ cm 3或更高的浓度氮掺杂或以1×10 12原子/ cm 3的浓度氮掺杂生长并且以0.1×10 16〜10×10 16原子/ cm 3的浓度进行碳掺杂和/或以1×10 17个/ cm 3以上的浓度掺杂的硼。通过从硅单晶切片制造硅晶片，并且在硅晶片的表面上生长外延层以制造外延晶片。本发明提供了一种用于大规模集成器件的外延晶片，其在器件活性区域中没有缺陷，并且具有优异的吸气效应，而没有外部或内在的吸气处理。

3. 发明授权

US06599816B2 Method of manufacturing silicon epitaxial wafer 有权
标题翻译：制造硅外延片的方法
公开(公告)号：US06599816B2
公开(公告)日：2003-07-29
申请号：US09800514
申请日：2001-03-08
申请人： Kouji Sueoka , Masanori Akatsuka , Yasuo Koike
发明人： Kouji Sueoka , Masanori Akatsuka , Yasuo Koike
IPC分类号： H01L21322
CPC分类号： C30B29/06 , C30B25/02 , H01L21/3225
摘要： A method is designed to manufacture a silicon epitaxial wafer exhibiting sufficient gettering capability from the initial stage of the device process. Specifically, the method is to manufacture the silicon wafer with a nitrogen concentration of at least 1×1012 atoms/cm3 and an oxygen concentration of 10˜18×1017 atoms/cm3 by annealing at a temperature of 800˜1,100° C. after epitaxial growth treatment, satisfying the following equation (a), t≧33−((T−800)/100) (a) wherein T(° C.) is temperature, and t(hr) is time, thereby manufacturing a high yield semiconductor device.
摘要翻译：设计一种方法来制造从器件工艺的初始阶段显示出足够的吸杂能力的硅外延晶片。具体地说，该方法是通过在外延生长处理后在800〜1100℃的温度退火，制造氮浓度为至少1×10 12原子/ cm 3，氧浓度为10〜18×10 17原子/ cm 3的硅晶片，满足其中T（℃）为温度，t（hr）为时间，由此制造高产率半导体器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式