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1. 发明申请

US20050000410A1 Manufacturing method of high resistivity silicon single crystal 有权
标题翻译：高电阻率硅单晶的制造方法
公开(公告)号：US20050000410A1
公开(公告)日：2005-01-06
申请号：US10828555
申请日：2004-04-21
申请人： Nobumitsu Takase , Hideshi Nishikawa , Makoto Ito , Kouji Sueoka , Shinsuke Sadamitsu
发明人： Nobumitsu Takase , Hideshi Nishikawa , Makoto Ito , Kouji Sueoka , Shinsuke Sadamitsu
IPC分类号： C30B15/00 , C30B29/06 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B29/06 , C30B15/00
摘要： To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high resistivity silicon single crystal in the range of from 100 to 2000 Ω cm with a CZ method. In a case where poly-silicon produced with a Siemens method using trichlorosilane as raw material is used as the silicon raw material, an impurity concentration in the silicon raw material is selected so as to be controlled in the range of from −5 to 50 ppta method in terms of (a donor concentration—an acceptor concentration) and the selected poly-silicon is used. In a case of a MCZ method, the poly-silicon is selected in the range of from −25 to 20 ppta and the selected poly-silicon is used. Instead of the raw material, poly-silicon produced with a Siemens method using monosilane as raw material is used. Alternatively, a silicon crystal manufactured with a CZ method or a MCZ method using poly-silicon raw material is used.
摘要翻译：为了抑制围绕目标值的电阻率的波动，从而在将硅原料熔融以制造范围为100的高电阻率硅单晶的制造方法中稳定地制造具有几乎相同的电阻率值的高电阻率硅单晶到2000欧米加厘米与CZ方法。在使用以三氯硅烷为原料的西门子方法制造的多晶硅作为硅原料的情况下，选择硅原料中的杂质浓度以控制在-5〜50ppta的范围内使用（供体浓度 - 受体浓度）和选择的多晶硅的方法。在MCZ方法的情况下，多晶硅的选择范围为-25〜20ppta，使用所选择的多晶硅。使用以硅烷为原料的西门子法生产的多晶硅代替原料。或者，使用以CZ法制造的硅晶体或使用多晶硅原料的MCZ法。

2. 发明授权

US07397110B2 High resistance silicon wafer and its manufacturing method 有权
标题翻译：高电阻硅晶片及其制造方法
公开(公告)号：US07397110B2
公开(公告)日：2008-07-08
申请号：US10512405
申请日：2003-04-16
申请人： Nobumitsu Takase , Hideshi Nishikawa , Makoto Ito , Koji Sueoka , Shinsuke Sadamitsu
发明人： Nobumitsu Takase , Hideshi Nishikawa , Makoto Ito , Koji Sueoka , Shinsuke Sadamitsu
IPC分类号： H01L29/36 , H01L21/322
CPC分类号： H01L21/3225
摘要： A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is implemented on the side of a device maker. A heat treatment for forming an oxygen precipitate nucleus is performed at 500 to 900° C. for 5 hours or more in a non-oxidizing atmosphere and a heat treatment for growing an oxygen precipitate is performed at 950 to 1050° C. for 10 hours or more on a high-oxygen and carbon-doped high-resistance silicon wafer in which resistivity is 100 Ωcm or more, an oxygen concentration is 14×1017 atoms/cm3 (ASTM F-121, 1979) or more and a carbon concentration is 0.5×1016 atoms/cm3 or more. By these heat treatments, a remaining oxygen concentration in the wafer is controlled to be 12×1017 atoms/cm3 (ASTM F-121, 1979) or less. Thus, there is provided a high-resistance, low-oxygen and high-strength silicon wafer in which resistivity is 100 Ωcm or more and an oxygen precipitate (BMD) having a size of 0.2 μm is formed so as to have high density of 1×104/cm2 or more.
摘要翻译：制造高电阻硅晶片，其中吸收能力，机械强度和经济效率优异，并且在用于形成电路的热处理中有效地防止了氧热供体的产生，该电路在设备制造商。在非氧化性气氛中，在500〜900℃下进行形成氧沉淀核的热处理5小时以上，在950〜1050℃下进行氧沉淀的热处理10小时以上，电阻率为100Ωm以上的高氧和碳掺杂高电阻硅晶片，氧浓度为14×10 17原子/ cm 3（以下） ASTM F-121,1979）或更高，碳浓度为0.5×10 16原子/ cm 3以上。通过这些热处理，将晶片中的剩余氧浓度控制为12×10 17原子/ cm 3（ASTM F-121,1979）或更小。因此，提供了电阻率为100Ωm或更大的高电阻，低氧和高强度硅晶片，并且形成具有0.2μm大小的氧沉淀物（BMD），以便具有高密度的1×10 4/4以上。

3. 发明授权

US07220308B2 Manufacturing method of high resistivity silicon single crystal 有权
标题翻译：高电阻率硅单晶的制造方法
公开(公告)号：US07220308B2
公开(公告)日：2007-05-22
申请号：US10828555
申请日：2004-04-21
申请人： Nobumitsu Takase , Hideshi Nishikawa , Makoto Ito , Koujl Sueoka , Shinsuke Sadamitsu
发明人： Nobumitsu Takase , Hideshi Nishikawa , Makoto Ito , Koujl Sueoka , Shinsuke Sadamitsu
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/00
摘要： To suppress a fluctuation in resistivity around a target value to thereby stably manufacture high resistivity silicon single crystals having almost the same resistivity values in a manufacturing method wherein a silicon raw material is molten to manufacture a high resistivity silicon single crystal in the range of from 100 to 2000 Ω cm with a CZ method. In a case where poly-silicon produced with a Siemens method using trichlorosilane as raw material is used as the silicon raw material, an impurity concentration in the silicon raw material is selected so as to be controlled in the range of from −5 to 50 ppta method in terms of (a donor concentration—an acceptor concentration) and the selected poly-silicon is used. In a case of a MCZ method, the poly-silicon is selected in the range of from −25 to 20 ppta and the selected poly-silicon is used. Instead of the raw material, poly-silicon produced with a Siemens method using monosilane as raw material is used. Alternatively, a silicon crystal manufactured with a CZ method or a MCZ method using poly-silicon raw material is used.
摘要翻译：为了抑制围绕目标值的电阻率的波动，从而在将硅原料熔融以制造范围为100的高电阻率硅单晶的制造方法中稳定地制造具有几乎相同的电阻率值的高电阻率硅单晶到2000欧米加厘米与CZ方法。在使用以三氯硅烷为原料的西门子方法制造的多晶硅作为硅原料的情况下，选择硅原料中的杂质浓度以控制在-5〜50ppta的范围内使用（供体浓度 - 受体浓度）和选择的多晶硅的方法。在MCZ方法的情况下，多晶硅的选择范围为-25〜20ppta，使用所选择的多晶硅。使用以硅烷为原料的西门子法生产的多晶硅代替原料。或者，使用以CZ法制造的硅晶体或使用多晶硅原料的MCZ法。

4. 发明申请

US20050253221A1 High resistance silicon wafer and method for production thereof 有权
标题翻译：高电阻硅晶片及其制造方法
公开(公告)号：US20050253221A1
公开(公告)日：2005-11-17
申请号：US10512405
申请日：2003-04-16
申请人： Nobumitsu Takase , Hideshi Nishikawa , Makoto Ito , Koji Sueoka , Shinsuke Sadamitsu
发明人： Nobumitsu Takase , Hideshi Nishikawa , Makoto Ito , Koji Sueoka , Shinsuke Sadamitsu
IPC分类号： H01L21/26 , H01L21/322 , H01L29/167 , H01L21/22
CPC分类号： H01L21/3225
摘要： A high-resistance silicon wafer is manufactured in which a gettering ability, mechanical strength, and economical efficiency are excellent and an oxygen thermal donor is effectively prevented from being generated in a heat treatment for forming a circuit, which is implemented on the side of a device maker. A heat treatment for forming an oxygen precipitate nucleus is performed at 500 to 900° C. for 5 hours or more in a non-oxidizing atmosphere and a heat treatment for growing an oxygen precipitate is performed at 950 to 1050° C. for 10 hours or more on a high-oxygen and carbon-doped high-resistance silicon wafer in which resistivity is 100 Ωcm or more, an oxygen concentration is 14×1017 atoms/cm3 (ASTM F-121, 1979) or more and a carbon concentration is 0.5×1016 atoms/cm3 or more. By these heat treatments, a remaining oxygen concentration in the wafer is controlled to be 12×1017 atoms/cm3 (ASTM F-121, 1979) or less. Thus, there is provided a high-resistance, low-oxygen and high-strength silicon wafer in which resistivity is 100 Ωcm or more and an oxygen precipitate (BMD) having a size of 0.2 μm is formed so as to have high density of 1×104/cm2 or more.
摘要翻译：制造高电阻硅晶片，其中吸收能力，机械强度和经济效率优异，并且在用于形成电路的热处理中有效地防止了氧热供体的产生，该电路在设备制造商。在非氧化性气氛中，在500〜900℃下进行形成氧沉淀核的热处理5小时以上，在950〜1050℃下进行氧沉淀的热处理10小时以上，电阻率为100Ωm以上的高氧和碳掺杂高电阻硅晶片，氧浓度为14×10 17原子/ cm 3（以下） ASTM F-121,1979）或更高，碳浓度为0.5×10 16原子/ cm 3以上。通过这些热处理，将晶片中的剩余氧浓度控制为12×10 17原子/ cm 3（ASTM F-121,1979）或更小。因此，提供了电阻率为100Ωm或更大的高电阻，低氧和高强度硅晶片，并且形成具有0.2μm大小的氧沉淀物（BMD），以便具有高密度的1×10 4/4以上。

5. 发明授权

US09139276B2 Outboard motor control system 有权
标题翻译：舷外马达控制系统
公开(公告)号：US09139276B2
公开(公告)日：2015-09-22
申请号：US14368810
申请日：2012-05-09
申请人： Makoto Ito
发明人： Makoto Ito
IPC分类号： B63H21/22 , B63H20/12 , B63H5/08 , B63H21/21 , B63H25/02 , B63H20/00 , B63H25/42
CPC分类号： B63H20/12 , B63H5/08 , B63H21/21 , B63H21/265 , B63H25/02 , B63H25/42 , B63H2020/003
摘要： A plurality of outboard motors are mounted to a stern of a watercraft and configured to be steered independently. A target steering angle setting section is configured to set a target steering angle for each of the outboard motors. Actuators are configured to steer the outboard motors such that the steering angle of each of the outboard motors is equal or substantially equal to a target steering angle. An actual steering angle detecting section is configured to detect an actual steering angle of each of the outboard motors. A control section is programmed and configured to control the steering operation of the outboard motors such that, when a steering angle difference defining a difference between the actual steering angles of adjacently arranged outboard motors becomes equal to or larger than a prescribed value, an increase of the steering angle difference is prevented.
摘要翻译：多个舷外马达安装在船舶船尾，并被配置成独立转向。目标转向角设定部被配置为对每个舷外马达设定目标转向角。致动器构造成转向舷外马达，使得每个舷外马达的转向角等于或基本上等于目标转向角。实际的转向角检测部被配置为检测每个舷外马达的实际转向角。控制部被编程和配置为控制舷外马达的转向操作，使得当定义相邻排列的外侧马达的实际转向角之间的差异的转向角差异等于或大于规定值时，增加防止转向角差。

6. 发明授权

US09062315B2 Method for transformation of stramenopile 有权
标题翻译：地幔的转化方法
公开(公告)号：US09062315B2
公开(公告)日：2015-06-23
申请号：US13877225
申请日：2011-09-30
申请人： Keishi Sakaguchi , Rie Hamaguchi , Takanori Matsuda , Makoto Ito , Naoki Nagano , Masahiro Hayashi , Daisuke Honda , Yuji Okita , Shinichi Sugimoto
发明人： Keishi Sakaguchi , Rie Hamaguchi , Takanori Matsuda , Makoto Ito , Naoki Nagano , Masahiro Hayashi , Daisuke Honda , Yuji Okita , Shinichi Sugimoto
IPC分类号： C12N15/79 , C12N15/89 , C12N9/02 , C12N9/10 , C12P7/64 , C12N15/52
CPC分类号： C12N15/79 , C12N9/0071 , C12N9/0083 , C12N9/1029 , C12N15/113 , C12N15/52 , C12N15/895 , C12N2310/11 , C12N2310/14 , C12P7/6409 , C12P7/6427 , C12P7/6472 , C12Y114/19001 , C12Y114/19006 , C12Y203/01119
摘要： To provide a transformation method for producing a stramenopile organism having an improved unsaturated fatty acid production capability by disrupting a gene of the stramenopile organism or inhibiting the expression of the gene in a genetically engineering manner. [Solution] A method for transforming a stramenopile organism, which comprises disrupting a gene of the stramenopile organism or inhibiting the expression of the gene in a genetically engineering manner, and which is characterized in that the stramenopile organism is selected from Thraustochytrium aureum, Parietichytrium sarkarianum, Thraustochytrium roseum and Parietichytrium sp. and the gene to be disrupted or of which the expression is to be inhibited is a gene associated with the biosynthesis of a fatty acid.
摘要翻译：提供通过以遗传工程方式破坏该层状生物体的基因或抑制该基因的表达来生产具有改善的不饱和脂肪酸生产能力的前烧石生物的转化方法。 [解决方案]一种转基因生物的方法，其包括以基因工程方式破坏所述地精生物体的基因或抑制所述基因的表达，其特征在于，所述前列腺生物体选自甲状腺破囊壶菌（Salisochytrium aureum），，鱼（Parietichytrium sarkarianum），玫瑰色胸，和Parietichytrium sp。并且待破坏的基因或其表达被抑制的基因是与脂肪酸的生物合成相关的基因。

7. 发明授权

US08608242B2 Seat structure and vehicle 有权
标题翻译：座椅结构和车辆
公开(公告)号：US08608242B2
公开(公告)日：2013-12-17
申请号：US13547962
申请日：2012-07-12
申请人： Masayuki Yamada , Hideki Kobayashi , Takeshi Tokai , Masaki Mori , Keisuke Onoda , Makoto Ito
发明人： Masayuki Yamada , Hideki Kobayashi , Takeshi Tokai , Masaki Mori , Keisuke Onoda , Makoto Ito
IPC分类号： A47C7/14 , B60N2/02
CPC分类号： B60N2/02 , B60N2/3011 , B60N2/3013 , B60N2/3031 , B60N2/305 , B60N2/3065 , B60N2/309 , B60N2/986
摘要： In a seat, in a state in which tilting of a back main frame around a tilting center is locked by a reclining mechanism, a lower end of a back joint link is turnably joined to a vehicle side. Thus, turning of a first link, a back sub frame and the back joint link is locked, and operation of a back link mechanism is locked. Therefore, a supporting rigidity from rear side of a back side portion can be enhanced by the back link mechanism (the back sub frame), and a crew sitting in the seat can be thoroughly retained.
摘要翻译：在座椅中，在倾斜中心的背部主框架的倾斜由倾斜机构锁定的状态下，后部接头连杆的下端可转动地接合到车辆侧。因此，第一连杆，后副车架和后关节链节的转动被锁定，并且后连杆机构的操作被锁定。因此，通过后连杆机构（后副车架）可以提高从后侧部的后侧的支撑刚性，能够充分地保持坐在座椅中的乘员。

8. 发明申请

US20130316693A1 MOBILE STATION AND TIME ADJUSTMENT METHOD 审中-公开
标题翻译：移动站和时间调整方法
公开(公告)号：US20130316693A1
公开(公告)日：2013-11-28
申请号：US13979264
申请日：2012-02-06
申请人： Makoto Ito , Kazufumi Yunoki , Takehiro Ida
发明人： Makoto Ito , Kazufumi Yunoki , Takehiro Ida
IPC分类号： H04W8/24
CPC分类号： H04W8/245 , G04R20/18
摘要： A mobile station includes a time information reception determining unit configured to determine whether time information is received from a residing network, a table configured to associate networks where the mobile station may reside with time zones for areas where the networks are operated, and a time adjustment unit configured to, in the case where it is not determined by the time information reception determining unit that the time information is received, refer to the table, and perform time adjustment based on the time zone corresponding to the network where the mobile station resides.
摘要翻译：移动站包括：时间信息接收确定单元，被配置为确定是否从驻留网络接收时间信息;被配置为将移动站可能驻留的网络与用于网络操作的区域的时区相关联的表，以及时间调整在未被时间信息接收判定单元判断为接收到时间信息的情况下，参照该表，并且基于与移动站所在的网络对应的时区来进行时间调整。

9. 发明授权

US08356546B2 Holding control valve 有权
标题翻译：保持控制阀
公开(公告)号：US08356546B2
公开(公告)日：2013-01-22
申请号：US12410259
申请日：2009-03-24
申请人： Masahiro Matsuo , Makoto Ito , Noboru Ito
发明人： Masahiro Matsuo , Makoto Ito , Noboru Ito
IPC分类号： F15B11/044 , F15B13/01
CPC分类号： F15B13/01 , F15B11/044 , F15B2211/20538 , F15B2211/30515 , F15B2211/30525 , F15B2211/3111 , F15B2211/329 , F15B2211/635 , F15B2211/7053 , Y10T137/7766
摘要： A holding control valve of the present invention is configured such that: a spool is configured to perform strokes by a piston configured to operate by introduction of pilot pressure and have a larger diameter than the spool; the piston is divided into a pilot piston configured to receive the pilot pressure and a relief operation piston disposed adjacent to the spool to receive pressure of relief oil discharged when a relief valve operates; and the relief oil is introduced to between the pilot piston and the relief operation piston.
摘要翻译：本发明的保持控制阀被构造成：阀芯构造成通过引导引导压力并且具有比阀芯更大的直径的活塞构造成执行行程; 活塞被分成被配置为接收先导压力的先导活塞和邻近阀芯设置的释放操作活塞，以在安全阀操作时接收排出的溢流油的压力; 并且救济油被引导到先导活塞和释放操作活塞之间。

10. 发明申请

US20120274110A1 Seat Structure and Vehicle 有权
标题翻译：座椅结构和车辆
公开(公告)号：US20120274110A1
公开(公告)日：2012-11-01
申请号：US13547962
申请日：2012-07-12
申请人： Masayuki Yamada , Hideki Kobayashi , Takeshi Tokai , Masaki Mori , Keishuke Onoda , Makoto Ito
发明人： Masayuki Yamada , Hideki Kobayashi , Takeshi Tokai , Masaki Mori , Keishuke Onoda , Makoto Ito
IPC分类号： B60N2/02 , A47C7/14
CPC分类号： B60N2/02 , B60N2/3011 , B60N2/3013 , B60N2/3031 , B60N2/305 , B60N2/3065 , B60N2/309 , B60N2/986
摘要： In a seat, in a state in which tilting of a back main frame around a tilting center is locked by a reclining mechanism, a lower end of a back joint link is turnably joined to a vehicle side. Thus, turning of a first link, a back sub frame and the back joint link is locked, and operation of a back link mechanism is locked. Therefore, a supporting rigidity from rear side of a back side portion can be enhanced by the back link mechanism (the back sub frame), and a crew sitting in the seat can be thoroughly retained.
摘要翻译：在座椅中，在倾斜中心的背部主框架的倾斜由倾斜机构锁定的状态下，后部接头连杆的下端可转动地接合到车辆侧。因此，第一连杆，后副车架和后关节链节的转动被锁定，并且后连杆机构的操作被锁定。因此，通过后连杆机构（后副车架）可以提高从后侧部的后侧的支撑刚性，能够充分地保持坐在座椅中的乘员。

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