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1. 发明授权

US06599816B2 Method of manufacturing silicon epitaxial wafer 有权
标题翻译：制造硅外延片的方法
公开(公告)号：US06599816B2
公开(公告)日：2003-07-29
申请号：US09800514
申请日：2001-03-08
申请人： Kouji Sueoka , Masanori Akatsuka , Yasuo Koike
发明人： Kouji Sueoka , Masanori Akatsuka , Yasuo Koike
IPC分类号： H01L21322
CPC分类号： C30B29/06 , C30B25/02 , H01L21/3225
摘要： A method is designed to manufacture a silicon epitaxial wafer exhibiting sufficient gettering capability from the initial stage of the device process. Specifically, the method is to manufacture the silicon wafer with a nitrogen concentration of at least 1×1012 atoms/cm3 and an oxygen concentration of 10˜18×1017 atoms/cm3 by annealing at a temperature of 800˜1,100° C. after epitaxial growth treatment, satisfying the following equation (a), t≧33−((T−800)/100) (a) wherein T(° C.) is temperature, and t(hr) is time, thereby manufacturing a high yield semiconductor device.
摘要翻译：设计一种方法来制造从器件工艺的初始阶段显示出足够的吸杂能力的硅外延晶片。具体地说，该方法是通过在外延生长处理后在800〜1100℃的温度退火，制造氮浓度为至少1×10 12原子/ cm 3，氧浓度为10〜18×10 17原子/ cm 3的硅晶片，满足其中T（℃）为温度，t（hr）为时间，由此制造高产率半导体器件。

2. 发明授权

US06641888B2 Silicon single crystal, silicon wafer, and epitaxial wafer. 有权
标题翻译：硅单晶，硅晶片和外延晶片。
公开(公告)号：US06641888B2
公开(公告)日：2003-11-04
申请号：US10055340
申请日：2002-01-25
申请人： Eiichi Asayama , Masataka Horai , Shigeru Umeno , Shinsuke Sadamitsu , Yasuo Koike , Kouji Sueoka , Hisashi Katahama
发明人： Eiichi Asayama , Masataka Horai , Shigeru Umeno , Shinsuke Sadamitsu , Yasuo Koike , Kouji Sueoka , Hisashi Katahama
IPC分类号： C30B2906
CPC分类号： C30B15/00 , C30B29/06 , Y10T428/21
摘要： There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013 atoms/cm3 or more, or with nitrogen doping at a concentration of 1×1012 atoms/cm3 and carbon doping at a concentration of 0.1×1016−5×1016 atoms/cm3 and/or boron doping at a concentration of 1×1017 atoms/cm3 or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment.
摘要翻译：提供了具有适合于大规模集成器件的足够的吸气效应的硅单晶，硅晶片和外延晶片。适用于外延晶片的硅单晶以1×10 13原子/ cm 3或更高的浓度氮掺杂或以1×10 12原子/ cm 3的浓度氮掺杂生长并且以0.1×10 16〜10×10 16原子/ cm 3的浓度进行碳掺杂和/或以1×10 17个/ cm 3以上的浓度掺杂的硼。通过从硅单晶切片制造硅晶片，并且在硅晶片的表面上生长外延层以制造外延晶片。本发明提供了一种用于大规模集成器件的外延晶片，其在器件活性区域中没有缺陷，并且具有优异的吸气效应，而没有外部或内在的吸气处理。

3. 发明授权

US07582357B2 Silicon semiconductor substrate 有权
标题翻译：硅半导体衬底
公开(公告)号：US07582357B2
公开(公告)日：2009-09-01
申请号：US11583856
申请日：2006-10-20
申请人： Yasuo Koike
发明人： Yasuo Koike
IPC分类号： B32B9/04 , B32B13/04 , C30B1/00 , C30B3/00
CPC分类号： C30B15/00 , C30B29/06
摘要： The present invention can provide a silicon semiconductor substrate used for and epitaxial wafer, in which uniform and high-level gettering ability is obtained irrespective of slicing positions from a silicon single crystal while generation of epitaxial defects can be suppressed, by doping carbon or carbon along with nitrogen during a pulling process of a CZ method or by performing appropriate heat treatment prior to the epitaxial process. Therefore, a crystal production yield can remarkably be improved because a permissible upper limit (concentration margin) of an oxygen concentration which is restricted by formation of a ring-shaped OSF region can be higher and also an excellent gettering ability is exhibited, while allowing an epitaxial wafer to be produced wherein epitaxial defects attributable to substrate crystal defects are not formed.
摘要翻译：本发明可以提供用于和外延晶片的硅半导体衬底，其中不管来自硅单晶的切片位置如何，均可获得均匀和高水平的吸杂能力，同时可以通过将碳或碳沿着掺杂方式掺杂而产生外延缺陷在CZ方法的拉制过程中用氮气或在外延过程之前进行适当的热处理。因此，由于通过形成环状OSF区域而限制的氧浓度的允许上限（浓度裕度）可以更高，并且还显示出优异的吸气能力，因此可以显着提高晶体产率，同时允许外延晶片，其中不会形成归因于衬底晶体缺陷的外延缺陷。

4. 发明授权

US07160385B2 Silicon wafer and method for manufacturing the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US07160385B2
公开(公告)日：2007-01-09
申请号：US10368359
申请日：2003-02-20
申请人： Yasuo Koike
发明人： Yasuo Koike
IPC分类号： C30B1/05
CPC分类号： H01L21/3225
摘要： A silicon wafer and a method for manufacturing the same are provided, wherein the silicon wafer has no crystal defects in the vicinity of the surface and provides excellent gettering efficiency in the process of manufacturing devices without IG treatment. The oxygen concentration and the carbon concentration are controlled respectively within a range of 11×1017–17×1017 atoms/cm3 (OLD ASTM) and within a range of 1×1016–15×1016 atoms/cm3 (NEW ASTM). A denuded zone having no crystal defects due to the existence of oxygen is formed on the surface and in the vicinity thereof, and oxygen precipitates are formed at a density of 1×104–5×106 counts/cm2, when a heat treatment is carried out at a temperature of 500–1000° C. for 1 to 24 hours. In the method for manufacturing the silicon wafer, moreover, the silicon wafer having the oxygen and carbon concentrations as controlled above is heat-treated at a temperature of 1100° C.–1380° C. for 1 to 10 hours. The control of the oxygen and carbon concentrations in the growth of a single crystal with CZ method allows a desired density of oxygen precipitates to be attained in the process of manufacturing devices and thereby sufficient gettering efficiency to be obtained.
摘要翻译：提供硅晶片及其制造方法，其中，硅晶片在表面附近没有晶体缺陷，并且在不进行IG处理的器件的制造工艺中提供优异的吸杂效率。氧浓度和碳浓度分别控制在11×10 17 -17×10 17原子/ cm 3（OLD ASTM）的范围内，并且在 1×10 16 -15×16 16原子/ cm 3（新ASTM）的范围。在表面及其附近形成由于存在氧而没有晶体缺陷的剥离区，并且以1×4×5×10 -6的密度形成氧析出物，当在500-1000℃的温度下进行热处理1至24小时时，SUP>计数/ cm 2。此外，在制造硅晶片的方法中，将具有上述控制的氧和碳浓度的硅晶片在1100℃-1380℃的温度下进行1〜10小时的热处理。利用CZ方法控制单晶生长中的氧和碳浓度允许在制造装置的过程中获得所需的氧沉淀物密度，从而获得足够的吸气效率。

5. 发明授权

US5357096A Line tracing method and line tracing apparatus 失效
标题翻译：线追踪方法和线追踪装置
公开(公告)号：US5357096A
公开(公告)日：1994-10-18
申请号：US38697
申请日：1993-03-29
申请人： Yasuo Koike , Tokuji Tanaka
发明人： Yasuo Koike , Tokuji Tanaka
IPC分类号： B23K7/00 , B23K10/00 , B23K26/08 , B23Q35/128 , G06F17/16 , G06T1/00
CPC分类号： B23Q35/128
摘要： A FIG. 1 is taken by a camera having optical/electrical elements arrayed in matrix, signals of pixels of the picture taken by the camera 2 are converted into binary data in a binary circuit 11, and the binary data is temporarily stored in a binary data storage device 12. The reference point 0 is determined on the edge of the figure, and plural coaxial circle scanning lines A, B about the reference point 0 which differs from each other in radius are set. In arithmetic circuit 15, coordinate data of pixels on the circle scanning lines A, B is operated. In the detector 16, binary data of the pixels on the circle scanning lines A, B is detected. In the decision circuit 17, the vectors from the reference point 0 to the detected pixels on the circle scanning lines A, N, and the vector angle between the obtained vectors is operated. A speed signal according to the vector angle is generated for driving the first and second drive 7, 8.
摘要翻译：图 1由具有以矩阵排列的光/电元件的相机拍摄，由相机2拍摄的图像的像素的信号在二进制电路11中被转换为二进制数据，并且二进制数据被临时存储在二进制数据存储装置在图的边缘上确定参考点0，并且设置围绕半径彼此不同的参考点0的多个同轴圆扫描线A，B。在算术电路15中，操作圆扫描线A，B上的像素的坐标数据。在检测器16中，检测圆扫描线A，B上的像素的二进制数据。在判定电路17中，操作从参考点0到圆扫描线A，N上的检测像素和所获得的矢量之间的向量角度的矢量。产生用于驱动第一和第二驱动器7,8的根据矢量角度的速度信号。

6. 发明授权

US08601901B2 Telescopic steering column apparatus 有权
标题翻译：伸缩式转向柱装置
公开(公告)号：US08601901B2
公开(公告)日：2013-12-10
申请号：US12675214
申请日：2009-06-05
申请人： Toru Ishii , Yasuo Koike
发明人： Toru Ishii , Yasuo Koike
IPC分类号： B62D1/18
CPC分类号： B62D1/184
摘要： To realize a practical structure capable of increasing the number of frictional engagement sections between members that are relatively displaced in response to adjustment of a front-rear position of a steering wheel, in a portion of a front end section of an outer column 11b that opposes to an intermediate section of an adjustment bolt 17a, there is formed a slit 33 that is long in the axial direction of this outer column 11b, and in a portion of the intermediate section of the adjustment bolt 17a that opposes to this outer column 11b, there is provided a pressing member 37, this pressing member 37 pressing the outer circumferential surface of the outer column 11b radially inward, with the rotation of the adjustment bolt 17a, and when fixing the front-rear position, with the rotation of the adjustment bolt 17a, a pair of supporting plate sections 23, which constitute a nipping (fixed) bracket 22a, nipping a nipped (movable) bracket 24a, and at the same time, the pressing member 37 bringing the inner circumferential surface of the outer column 11b and the outer circumferential surface of an inner column 12b into frictional engagement.
摘要翻译：为了实现能够增加响应于方向盘的前后位置的调整而相对移位的构件之间的摩擦接合部的数量的实用结构，在与外部柱11b相对的外柱11b的前端部的一部分在调节螺栓17a的中间部分形成有沿该外柱11b的轴向长的狭缝33，在调节螺栓17a的与该外柱11b相对的部分中，设置有按压构件37，该按压构件37随着调节螺栓17a的旋转而径向向内挤压外柱11b的外周面，并且当固定前后位置时，随着调节螺栓的旋转 17a，一对支撑板部23，其构成夹持（固定）支架22a，夹持夹持（可移动）支架24a，同时压紧构件37bri 使外柱11b的内圆周表面和内柱12b的外周表面成为摩擦接合。

7. 发明授权

US08411263B2 Method of evaluating silicon wafer and method of manufacturing silicon wafer 有权
标题翻译：硅晶片评估方法及硅晶片制造方法
公开(公告)号：US08411263B2
公开(公告)日：2013-04-02
申请号：US13459776
申请日：2012-04-30
申请人： Shin Uchino , Masataka Hourai , Yasuo Koike , Ryuji Ohno
发明人： Shin Uchino , Masataka Hourai , Yasuo Koike , Ryuji Ohno
IPC分类号： G01N21/94
CPC分类号： G01N21/6489 , G01N21/6456 , H01L22/12
摘要： A method of evaluating a silicon wafer includes obtaining first surface distribution information indicating an surface distribution of photoluminescence intensity on a surface of a silicon wafer; after obtaining the first surface distribution information, subjecting the silicon wafer to a thermal oxidation treatment, and then obtaining second surface distribution information indicating an surface distribution of photoluminescence intensity on the surface of the silicon wafer; obtaining difference information for the first surface distribution information and third surface distribution information, with the third surface distribution information having been obtained by correcting the second surface distribution information with a correction coefficient of less than 1; and based on the difference information obtained, evaluating an evaluation item selected from the group consisting of absence or presence of oxygen precipitates and surface distribution of oxygen precipitates in the silicon wafer being evaluated.
摘要翻译：评估硅晶片的方法包括：获得表示硅晶片表面上的光致发光强度的表面分布的第一表面分布信息; 在获得第一表面分布信息之后，对硅晶片进行热氧化处理，然后获得指示在硅晶片表面上的光致发光强度的表面分布的第二表面分布信息; 获得第一表面分布信息和第三表面分布信息的差异信息，其中第三表面分布信息是通过校正小于1的校正系数的第二表面分布信息而获得的; 并且基于获得的差异信息，评估从由硅沉积物的不存在或存在以及硅晶片中的氧沉淀物的表面分布组成的组中评估的评价项目。

8. 发明申请

US20120191645A1 INFORMATION PROCESSING APPARATUS AND DATABASE SYSTEM 审中-公开
标题翻译：信息处理设备和数据库系统
公开(公告)号：US20120191645A1
公开(公告)日：2012-07-26
申请号：US13331133
申请日：2011-12-20
申请人： Yasuo Koike , Daisuke Shimabayashi , Kenji Iino
发明人： Yasuo Koike , Daisuke Shimabayashi , Kenji Iino
IPC分类号： G06F17/30 , G06F9/46
CPC分类号： G06F11/2097 , G06F11/2028 , G06F11/2038 , G06F16/2379
摘要： An information processing apparatus includes an execution response unit that executes an operation command and sends results of the execution to a process execution apparatus, a first result update unit that, upon receiving a determination command when the information processing apparatus is operating normally, updates the information processing apparatus with the results of the execution sent by the execution response unit and that transmits the results of the execution to copy apparatuses, a second result update unit that, upon receiving the determination command when operation of the information processing apparatus is abnormal, transmits an abnormality notification to the copy apparatuses, and a determination transmission unit that, upon being notified of the update using the results of the execution from the copy apparatuses that have received the results of the execution transmitted from the first result update unit, notifies the process execution apparatus of the determination of the operation command.
摘要翻译：一种信息处理装置，包括执行响应单元，执行操作命令并将执行结果发送给处理执行装置;第一结果更新单元，当信息处理装置正常运行时，在接收到确定命令时，更新信息处理装置，具有执行响应单元发送的执行结果，并将执行结果发送到复制装置;第二结果更新单元，当信息处理装置的操作异常时，在接收到确定命令时，发送一个对复制装置的异常通知，以及确定发送单元，在从接收到从第一结果更新单元发送的执行结果的复制装置中使用执行结果通知了更新后，通知处理执行测定仪器o f操作命令。

9. 发明申请

US20070101925A1 Silicon wafer and method for manufacturing the same 有权
标题翻译：硅晶片及其制造方法
公开(公告)号：US20070101925A1
公开(公告)日：2007-05-10
申请号：US11643841
申请日：2006-12-22
申请人： Yasuo Koike
发明人： Yasuo Koike
IPC分类号： H01L21/322
CPC分类号： H01L21/3225
摘要： A silicon wafer and a method for manufacturing the same are provided, wherein the silicon wafer has no crystal defects in the vicinity of the surface and provides excellent gettering efficiency in the process of manufacturing devices without IG treatment. The oxygen concentration and the carbon concentration are controlled respectively within a range of 11×1017-17×1017 atoms/cm3 (OLD ASTM) and within a range of 1×1016-15×1016 atoms/cm3 (NEW ASTM). A denuded zone having no crystal defects due to the existence of oxygen is formed on the surface and in the vicinity thereof, and oxygen precipitates are formed at a density of 1×104-5×106 counts/cm2, when a heat treatment is carried out at a temperature of 500-1000° C. for 1 to 24 hours. In the method for manufacturing the silicon wafer, moreover, the silicon wafer having the oxygen and carbon concentrations as controlled above is heat-treated at a temperature of 1100° C-1380° C for 1 to 10 hours. The control of the oxygen and carbon concentrations in the growth of a single crystal with CZ method allows a desired density of oxygen precipitates to be attained in the process of manufacturing devices and thereby sufficient gettering efficiency to be obtained.
摘要翻译：提供硅晶片及其制造方法，其中，硅晶片在表面附近没有晶体缺陷，并且在不进行IG处理的器件的制造工艺中提供优异的吸杂效率。氧浓度和碳浓度分别控制在11×10 17 -17×10 17原子/ cm 3（OLD ASTM）的范围内，并且在 1×10 16 -15×16 16原子/ cm 3（新ASTM）的范围。在表面及其附近形成由于存在氧而没有晶体缺陷的剥离区，并且以1×4×5×10 -6的密度形成氧析出物，当在500-1000℃的温度下进行热处理1至24小时时，SUP>计数/ cm 2。此外，在制造硅晶片的方法中，将具有上述控制的氧和碳浓度的硅晶片在1100℃-1380℃的温度下进行1〜10小时的热处理。利用CZ方法控制单晶生长中的氧和碳浓度允许在制造装置的过程中获得所需的氧沉淀物密度，从而获得足够的吸气效率。

10. 发明申请

US20070068311A1 Steering apparatus 审中-公开
标题翻译：转向装置
公开(公告)号：US20070068311A1
公开(公告)日：2007-03-29
申请号：US11516569
申请日：2006-09-07
申请人： Mitsuo Shimoda , Tomoyuki Tsunoda , Yasuo Koike
发明人： Mitsuo Shimoda , Tomoyuki Tsunoda , Yasuo Koike
IPC分类号： B62D1/18
CPC分类号： B62D1/195 , B62D1/184
摘要： There is provided a steering apparatus having a vehicle-body-mounted bracket mountable in a vehicle body, a steering shaft to which a steering wheel is attached, a column which is supported by the vehicle-body-mounted bracket so that a tilt position thereof is adjustable, rotatably supports the steering shaft and a clamp unit that clamps the column to the vehicle-body-mounted bracket through a tilt friction plate at a desired tilt position and a connection member connecting the tilt friction plate with the vehicle-body-mounted bracket. When an impact force, whose magnitude is equal to or more than a predetermined value, acts at a collision, connection of the tilt friction plate to the vehicle-body-mounted bracket is canceled, so that the column moves together with the tilt friction plate in a tilt direction relative to the vehicle-body-mounted bracket.
摘要翻译：提供了一种转向装置，其具有可安装在车体中的车体安装的支架，安装方向盘的转向轴，由车身安装的支架支撑的柱，使得其倾斜位置可调节，可转动地支撑转向轴和夹紧单元，该夹紧单元通过倾斜摩擦板将所述柱固定到车身安装的支架上，并将所述倾斜摩擦板与车身安装托架。当冲击力等于或大于预定值的冲击力作用在碰撞时，倾斜摩擦板与车身安装支架的连接被取消，使得柱与倾斜摩擦片一起移动相对于车身安装的支架倾斜。

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