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    • 2. 发明授权
    • High resolution reduction catadioptric relay lens
    • 高分辨率降低反射折射中继镜
    • US5241423A
    • 1993-08-31
    • US738971
    • 1991-08-01
    • George L. ChiuRama N. SinghJanusz S. Wilczynski
    • George L. ChiuRama N. SinghJanusz S. Wilczynski
    • G02B13/00G02B17/08G03F7/20
    • G02B17/0892G02B13/00G02B17/08G03F7/70225G03F7/70791
    • An optical system of a NX reduction catadioptric relay lens having sub-half micron resolution over the ultraviolet band width is described. A spherical mirror with a stop at the mirror is used to work at substantially the desired reduction ratio and the desired high numerical aperture sufficient to provide the desired high resolution. A beam splitting cube with appropriate coatings is used to form an accessible image of an object on an image plane. Refracting correctors in the path of the slow beam incident on the mirror and in the path of the fast beam reflected on the mirror are designed to fix the aberrations of the image formed by the mirror. The beam splitter coatings are chosen in such a way that beams reflected from and transmitted therethrough suffer no net aberration as a result of multiple reflections within the thin film beam splitter coatings and therefore are substantially free of aberration, distortion and apodization which would result from the beam splitting surface in the absence of these coatings.
    • 描述了在紫外线带宽上具有半微米分辨率的NX还原反射折射中继透镜的光学系统。 使用在镜子处具有止动件的球面镜以基本上所需的减小比率和足以提供所需高分辨率的期望的高数值孔径进行工作。 使用具有适当涂层的分束立方体在图像平面上形成物体的可访问图像。 入射在反射镜上的慢光束和在反射镜上反射的快光束的路径中的光束的折射校正器设计成固定由反射镜形成的图像的像差。 选择分束器涂层,使得从薄膜分束器涂层中反射并从其透射的光束不会因薄膜分束器涂层内的多次反射而产生净像差,因此基本上不会产生像差,畸变和变迹 在没有这些涂层的情况下分束表面。
    • 6. 发明授权
    • Alignment system for lithographic proximity printing
    • 光刻邻近印刷对准系统
    • US4595295A
    • 1986-06-17
    • US684432
    • 1984-12-20
    • Janusz S. Wilczynski
    • Janusz S. Wilczynski
    • G03F9/00G01B11/27
    • G03F9/70
    • An alignment system is described for lithographic proximity printing apparatus wherein the wafer and lithographic mask are each individually aligned with a third element. An alignment mask carries an alignment pattern corresponding to an alignment mark on the microcircuit wafer and also carries an alignment pattern corresponding to an alignment mark on the proximity printing mask. In one embodiment, the alignment mask is illuminated from the back side by alignment radiation (which need not be visible light) and the alignment patterns carried by the alignment mask are imaged onto the corresponding wafer and proximity printing mask alignment marks. Since the projected alignment patterns are spatially separated at the alignment mask one of the alignment patterns is conveniently shifted in effective optical position to compensate for the difference in axial position of the wafer and printing mask alignment marks. When a projected alignment pattern image correlates with (i.e., overlays) the corresponding alignment mark, reflected or scattered light leaving the alignment mark is either at a maximum or at a minimum (i.e., an extremum) depending upon the system configuration. A light splitter deflects some of the light coming from each of the alignment marks to individual light intensity monitors, such as photomultipliers. Alignment of the wafer and printing mask has been achieved when both intensity monitors reach the correct extremum simultaneously (or reach the midpoint of the correct extremum if the extremum is not sharp).
    • 描述了用于光刻邻近打印设备的对准系统,其中晶片和光刻掩模各自与第三元件对准。 对准掩模携带对应于微电路晶片上的对准标记的对准图案,并且还携带对应于邻近印刷掩模上的对准标记的对准图案。 在一个实施例中,通过对准辐射(其不需要是可见光)从背面照射对准掩模,并且由对准掩模承载的对准图案被成像到相应的晶片和接近印刷掩模对准标记上。 由于投影的对准图案在对准掩模处空间分离,所以对准图案之一方便地在有效的光学位置移位以补偿晶片的轴向位置和印刷掩模对准标记的差异。 当投影的对准图案图像与对应的对准标记相关(即,重叠)时,取决于系统配置,离开对准标记的反射或散射光处于最大值或最小值(即极值)。 光分离器将来自每个对准标记的一些光偏转到各个光强度监视器,例如光电倍增管。 当两个强度监测器同时达到正确的极值时(或者如果极值不清楚则达到正确极值的中点),已经实现了晶片和印刷掩模的对准。