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1. 发明授权

US5534094A Method for fabricating multi-layer thin film structure having a separation layer 失效
标题翻译：具有分离层的多层薄膜结构的制造方法
公开(公告)号：US5534094A
公开(公告)日：1996-07-09
申请号：US314789
申请日：1994-09-29
申请人： Gnanalingam Arjavalingam , Alina Deutsch , Fuad E. Doany , Bruce K. Furman , Donald J. Hunt , Chandrasekhar Narayan , Modest M. Oprysko , Sampath Purushothaman , Vincent Ranieri , Stephen Renick , Jane M. Shaw , Janusz S. Wilczynski , David F. Witman
发明人： Gnanalingam Arjavalingam , Alina Deutsch , Fuad E. Doany , Bruce K. Furman , Donald J. Hunt , Chandrasekhar Narayan , Modest M. Oprysko , Sampath Purushothaman , Vincent Ranieri , Stephen Renick , Jane M. Shaw , Janusz S. Wilczynski , David F. Witman
IPC分类号： B23K26/00 , B32B37/00 , H01L21/68 , H01L23/12 , H01L23/15 , H05K3/00 , H05K3/46 , B32B31/28
CPC分类号： H01L21/6835 , H01L2221/68345 , H01L2221/68359 , H05K3/0011 , H05K3/46 , Y10T156/1158 , Y10T428/12528 , Y10T428/12549 , Y10T428/12569 , Y10T428/12611
摘要： A method and apparatus for releasing a workpiece from a substrate including providing a substrate which is transparent to a predetermined wavelength of electromagnetic radiation; forming, on the substrate, a separation layer which degrades in response to the predetermined radiation; providing the workpiece on the separation layer; and directing the predetermined radiation at the separation layer through the transparent substrate so as to degrade the separation layer and to separate the workpiece from the substrate.
摘要翻译：一种用于从衬底释放工件的方法和装置，包括提供对预定波长的电磁辐射是透明的衬底; 在衬底上形成响应于预定辐射而降解的分离层; 在分离层上提供工件; 并且通过透明基板将分离层处的预定辐射引导，以使分离层退化并将工件与基板分离。

2. 发明授权

US5258236A Multi-layer thin film structure and parallel processing method for fabricating same 失效
标题翻译：多层薄膜结构及其制造方法
公开(公告)号：US5258236A
公开(公告)日：1993-11-02
申请号：US695368
申请日：1991-05-03
申请人： Gnanalingam Arjavalingam , Alina Deutsch , Fuad E. Doany , Bruce K. Furman , Donald J. Hunt , Chandrasekhar Narayan , Modest M. Oprysko , Sampath Purushothaman , Vincent Ranieri , Stephen Renick , Jane M. Shaw , Janusz S. Wilczynski , David F. Witman
发明人： Gnanalingam Arjavalingam , Alina Deutsch , Fuad E. Doany , Bruce K. Furman , Donald J. Hunt , Chandrasekhar Narayan , Modest M. Oprysko , Sampath Purushothaman , Vincent Ranieri , Stephen Renick , Jane M. Shaw , Janusz S. Wilczynski , David F. Witman
IPC分类号： B23K26/00 , B32B37/00 , H01L21/68 , H01L23/12 , H01L23/15 , H05K3/00 , H05K3/46 , B32B15/04 , H01L29/12
CPC分类号： H01L21/6835 , H01L2221/68345 , H01L2221/68359 , H05K3/0011 , H05K3/46 , Y10T156/1158 , Y10T428/12528 , Y10T428/12549 , Y10T428/12569 , Y10T428/12611
摘要： A method and apparatus for releasing a workpiece from a substrate including providing a substrate which is transparent to a predetermined wavelength of electromagnetic radiation; forming, on the substrate, a separation layer which degrades in response to the predetermined radiation; providing the workpiece on the separation layer; and directing the predetermined radiation at the separation layer through the transparent substrate so as to degrade the separation layer and to separate the workpiece from the substrate.
摘要翻译：一种用于从衬底释放工件的方法和装置，包括提供对预定波长的电磁辐射是透明的衬底; 在衬底上形成响应于预定辐射而降解的分离层; 在分离层上提供工件; 并且通过透明基板将分离层处的预定辐射引导，以使分离层退化并将工件与基板分离。

3. 发明授权

US5793836A X-ray mask pellicle 失效
标题翻译： X射线面具防护薄膜
公开(公告)号：US5793836A
公开(公告)日：1998-08-11
申请号：US716657
申请日：1996-09-06
申请人： Juan R. Maldonado , Raul E. Acosta , Marie Angelopoulos , Fuad E. Doany , Chandrasekhar Narayan , Andrew T. S. Pomerene , Jane M. Shaw , Kurt R. Kimmel
发明人： Juan R. Maldonado , Raul E. Acosta , Marie Angelopoulos , Fuad E. Doany , Chandrasekhar Narayan , Andrew T. S. Pomerene , Jane M. Shaw , Kurt R. Kimmel
IPC分类号： G03F1/00 , G03F1/22 , G03F1/62 , G03F1/64 , G03F7/20 , H01L21/027 , H05K1/00
CPC分类号： G03F1/62 , G03F1/22 , G03F1/64 , G03F7/70691
摘要： An X-ray mask pellicle is capable of protecting the X-ray mask from contaminants and the wafer from contact with the X-ray absorber material of the mask. The X-ray mask pellicle is sufficiently thin to allow X-ray exposure at the required mask to wafer gaps yet is sufficiently durable, replaceable, tough and X-ray resistant to be used in X-ray lithography. A thin (organic or inorganic) X-ray mask pellicle to be placed covering the X-ray mask pattern area is fabricated as a thin film and attached to a support ring. A selected area of the pellicle film, tailored to cover the absorber pattern in the X-ray mask, is etched to decrease its thickness to below 2 .mu.m. If the thin film of the pellicle is not itself conductive, a thin conductive film may be coated on both sides. In an alternative embodiment, the separation between the pellicle and the X-ray mask can be achieved by forming the mask with a stepped profile.
摘要翻译： X射线掩模防护薄膜组件能够保护X射线掩模免受污染物和晶片与掩模的X射线吸收材料的接触。 X射线掩模防护薄膜是足够薄的，以允许所需掩模的X射线暴露于晶片间隙，而且在X射线光刻中使用的是足够耐用的，可更换的，坚固的和耐X射线的。将覆盖X射线掩模图案区域的薄（有机或无机）X射线掩模防护薄膜组件制成薄膜并附着在支撑环上。为了覆盖X射线掩模中的吸收体图案而定制的防护薄膜的选定区域被蚀刻以将其厚度减小到低于2μm。如果防护薄膜的薄膜本身不是导电的，则可以在两侧涂覆薄导电膜。在替代实施例中，防护薄膜组件和X射线掩模之间的分离可以通过以阶梯轮廓形成掩模来实现。

4. 发明授权

US5471090A Electronic structures having a joining geometry providing reduced capacitive loading 失效
标题翻译：具有提供降低的电容负载的接合几何形状的电子结构
公开(公告)号：US5471090A
公开(公告)日：1995-11-28
申请号：US28023
申请日：1993-03-08
申请人： Alina Deutsch , David A. Lewis , Chandrasekhar Narayan , Anthony L. Plachy
发明人： Alina Deutsch , David A. Lewis , Chandrasekhar Narayan , Anthony L. Plachy
IPC分类号： H01L23/12 , H01L23/538 , H05K1/00 , H05K1/02 , H05K1/11 , H05K3/46 , H01L23/48 , H01L29/44
CPC分类号： H01L23/5385 , H05K1/0216 , H05K1/111 , H01L2924/0002 , H01L2924/09701 , H01L2924/3011 , H05K1/0289 , H05K2201/0373 , H05K2201/0792 , H05K2201/0939 , H05K2201/09427 , H05K2201/10719 , H05K2203/061 , H05K3/4614 , Y02P70/611
摘要： Electrical interconnection structures are described. The electrical interconnection structures are formed by electrically interconnecting in a stack a plurality of discrete substrates. By using a plurality of discrete substrates, a multilayer dielectric/electrical conductor structure can be fabricated from individual discrete substrates each of which can be tested prior to forming a composite stack so that defects in each discrete substrate can be eliminated before inclusion into the stack. Electrical interconnection between adjacent substrate is provided by an array of contact locations on each surface of the adjacent substrates. Corresponding contacts on adjacent substrates are adapted for mutual electrical engagement. Adjacent contact locations can be thermocompression bonded. To reduce the parasitic capacitance and coupled noise between the contact pads and the electrical conductors within the interior of each discrete substrate, the contact pads on each substrate have elongated shape. The elongated contact pads or lattice pads on adjacent substrates are nonparallel and preferably orthogonal so that the corresponding pads of adjacent substrates electrically interconnect an intersecting area which varies in location along the elongated contact pads as the placement of the adjacent substrates varies in the manufacture.
摘要翻译：描述电互连结构。电互连结构通过在堆叠中电互连而形成，多个分立的衬底。通过使用多个分立的衬底，多层电介质/电导体结构可以由单独的离散衬底制成，每个离散衬底可以在形成复合堆叠之前进行测试，以便在包含在堆叠中之前可以消除每个离散衬底中的缺陷。相邻基板之间的电气互连通过相邻基板的每个表面上的接触位置阵列来提供。相邻基板上的相应触点适于相互电接合。相邻的接触位置可以热压粘合。为了减小接触焊盘和每个离散衬底内部的电导体之间的寄生电容和耦合噪声，每个衬底上的接触焊盘具有细长形状。相邻基板上的细长接触焊盘或网格焊盘是不平行的并且优选地是正交的，使得相邻衬底的相应焊盘在制造中随着相邻衬底的布置变化而沿着细长的接触焊盘将位置变化的相交区域电连接。

5. 发明授权

US5367195A Structure and method for a superbarrier to prevent diffusion between a noble and a non-noble metal 失效
标题翻译：用于防止贵金属和非贵金属之间扩散的超级隔离物的结构和方法
公开(公告)号：US5367195A
公开(公告)日：1994-11-22
申请号：US1524
申请日：1993-01-08
申请人： Giulio DiGiacomo , Jung-Ihl Kim , Chandrasekhar Narayan , Sampath Purushothaman
发明人： Giulio DiGiacomo , Jung-Ihl Kim , Chandrasekhar Narayan , Sampath Purushothaman
IPC分类号： H01L23/12 , H01L21/28 , H01L23/485 , H01L23/498 , H01L23/532 , H01L29/43 , H05K1/09 , H05K3/24 , H05K3/34 , H05K3/38 , H01L23/48 , H01L29/46 , H01L29/62 , H01L29/64
CPC分类号： H01L24/05 , H01L23/49811 , H01L23/49866 , H01L23/532 , H01L24/03 , H01L24/48 , H05K3/244 , H01L2224/04042 , H01L2224/05084 , H01L2224/05124 , H01L2224/05147 , H01L2224/05155 , H01L2224/05157 , H01L2224/05166 , H01L2224/0517 , H01L2224/05172 , H01L2224/05179 , H01L2224/0518 , H01L2224/05181 , H01L2224/05184 , H01L2224/05611 , H01L2224/05644 , H01L2224/05664 , H01L2224/05669 , H01L2224/05673 , H01L2224/48463 , H01L2224/4847 , H01L2224/85201 , H01L2224/85205 , H01L2224/85444 , H01L2224/85815 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/01327 , H01L2924/014 , H01L2924/05042 , H01L2924/09701 , H01L2924/10253 , H01L2924/12042 , H01L2924/15787 , H05K3/388
摘要： This invention relates generally to structure and method for preventing metal diffusion between a noble metal layer and an adjoining non-noble metal layer, and more specifically to new structures and methods for providing a superbarrier structure between copper and an adjoining noble metal layer. This is achieved by sequentially deposited a layer of non-noble metal, a layer of titanium, a layer of molybdenum, and a layer of noble or relatively less noble metal as the interconnecting metallurgy. This invention also relates to an improved multilayer metallurgical pad or metallurgical structure for mating at least a portion of a pin or a connector or a wire to a substrate.
摘要翻译：本发明一般涉及用于防止贵金属层与相邻的非贵金属层之间的金属扩散的结构和方法，更具体地涉及在铜和邻接的贵金属层之间提供超级结构的新结构和方法。这是通过依次沉积一层非贵金属，一层钛，一层钼，以及一层贵重或相对较低贵重金属作为互连冶金而实现的。本发明还涉及用于将销或连接器或电线的至少一部分配合到衬底的改进的多层冶金垫或冶金结构。

6. 发明授权

US5167913A Method of forming an adherent layer of metallurgy on a ceramic substrate 失效
标题翻译：在陶瓷基板上形成冶金粘附层的方法
公开(公告)号：US5167913A
公开(公告)日：1992-12-01
申请号：US813244
申请日：1991-12-23
申请人： John Acocella , Philip L. Flaitz , Raj N. Master , Chandrasekhar Narayan , Sarah H. Knickerbocker , Paul H. Palmateer , Sampath Purushothaman , Srinivasa S. N. Reddy
发明人： John Acocella , Philip L. Flaitz , Raj N. Master , Chandrasekhar Narayan , Sarah H. Knickerbocker , Paul H. Palmateer , Sampath Purushothaman , Srinivasa S. N. Reddy
IPC分类号： H01L21/48 , H05K1/09 , H05K3/12 , H05K3/18 , H05K3/38 , H05K3/46
CPC分类号： H05K3/1291 , H01L21/4846 , H01L21/486 , H05K1/092 , H05K2203/1126 , H05K3/4629 , Y10T428/12528 , Y10T428/12611
摘要： A method of forming an adherent layer of metallurgy on a ceramic substrate which includes the steps of obtaining a ceramic material containing a polymeric binder and copper metallurgy patterns within the ceramic body. In one embodiment of the invention, the ceramic body also contains MgO.Thereafter, a surface layer of metallurgy is formed on the surface of the ceramic body. In one embodiment, the surface layer is nickel and in another embodiment, the surface layer is copper or gold.Then, the ceramic body undergoes a sintering cycle which includes the steps of pyrolysis, binder burnoff and, lastly, densification and, in some cases, crystallization. During densification and crystallization, there is a predetermined steam atmosphere which meets the following requirements: a partial pressure of oxygen less than that necessary to satisfy the equilibrium equation 4Cu+O.sub.2 =2Cu.sub.2 O; and a partial pressure of oxygen less than or equal to that necessary to satisfy the equilibrium equation 2Ni+O.sub.2 =2NiO for nickel in said surface metallurgy.
摘要翻译：一种在陶瓷基板上形成冶金粘附层的方法，包括以下步骤：在陶瓷体内获得含有聚合物粘合剂和铜冶金图案的陶瓷材料。在本发明的一个实施例中，陶瓷体还含有MgO。此后，在陶瓷体的表面上形成表面冶金层。在一个实施方案中，表面层是镍，在另一个实施方案中，表面层是铜或金。然后，陶瓷体经历烧结循环，其包括热解，粘合剂燃烧的步骤，最后是致密化，在某些情况下，结晶。在致密化和结晶过程中，有一个预定的蒸气气氛满足以下要求：氧气分压小于满足平衡方程式4Cu + O2 = 2Cu2O所需的氧分压; 以及小于或等于满足所述表面冶金中镍的平衡方程式2Ni + O2 = 2NiO所需的氧分压。

7. 发明申请

US20060264036A1 Line level air gaps 审中-公开
标题翻译：线路气隙
公开(公告)号：US20060264036A1
公开(公告)日：2006-11-23
申请号：US11491816
申请日：2006-07-24
申请人： Shyng-Tsong Chen , Stefanie Chiras , Matthew Colburn , Tomothy Dalton , Jeffrey Hedrick , Elbert Huang , Kaushik Kumar , Michael Lane , Kelly Malone , Chandrasekhar Narayan , Satyanarayana Nitta , Sampath Purushothaman , Robert Rosenberg , Christy Tyberg , Roy Yu
发明人： Shyng-Tsong Chen , Stefanie Chiras , Matthew Colburn , Tomothy Dalton , Jeffrey Hedrick , Elbert Huang , Kaushik Kumar , Michael Lane , Kelly Malone , Chandrasekhar Narayan , Satyanarayana Nitta , Sampath Purushothaman , Robert Rosenberg , Christy Tyberg , Roy Yu
IPC分类号： H01L21/4763
CPC分类号： H01L21/7682 , H01L21/76829 , H01L23/5222 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.
摘要翻译：在多电平微电子集成电路中，空气包括永久线路电介质，超低K材料通过电介质。在通过清洁热分解除去牺牲材料并通过IC结构中的孔隙率辅助副产物扩散后，将空气供应到线路电平。任选地，空气也包括在通孔级电介质中的孔隙中。通过将空气结合到本发明产生的程度，使层内和层间介电值最小化。

8. 发明授权

US07084479B2 Line level air gaps 失效
公开(公告)号：US07084479B2
公开(公告)日：2006-08-01
申请号：US10731377
申请日：2003-12-08
申请人： Shyng-Tsong Chen , Stefanie Ruth Chiras , Matthew Earl Colburn , Timothy Joseph Dalton , Jeffrey Curtis Hedrick , Elbert Emin Huang , Kaushik Arun Kumar , Michael Wayne Lane , Kelly Malone , Chandrasekhar Narayan , Satyanarayana Venkata Nitta , Sampath Purushothaman , Robert Rosenburg , Christy Sensenich Tyberg , Roy RongQing Yu
发明人： Shyng-Tsong Chen , Stefanie Ruth Chiras , Matthew Earl Colburn , Timothy Joseph Dalton , Jeffrey Curtis Hedrick , Elbert Emin Huang , Kaushik Arun Kumar , Michael Wayne Lane , Kelly Malone , Chandrasekhar Narayan , Satyanarayana Venkata Nitta , Sampath Purushothaman , Robert Rosenburg , Christy Sensenich Tyberg , Roy RongQing Yu
IPC分类号： H01L29/00 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/7682 , H01L21/76829 , H01L23/5222 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.

9. 发明申请

US20050127514A1 Line level air gaps 失效
标题翻译：线路气隙
公开(公告)号：US20050127514A1
公开(公告)日：2005-06-16
申请号：US10731377
申请日：2003-12-08
申请人： Shyng-Tsong Chen , Stefanie Chiras , Matthew Colburn , Timothy Dalton , Jeffrey Hedrick , Elbert Huang , Kaushik Kumar , Michael Lane , Kelly Malone , Chandrasekhar Narayan , Satyanarayana Nitta , Sampath Purushothaman , Robert Rosenberg , Christy Tyberg , Roy Yu
发明人： Shyng-Tsong Chen , Stefanie Chiras , Matthew Colburn , Timothy Dalton , Jeffrey Hedrick , Elbert Huang , Kaushik Kumar , Michael Lane , Kelly Malone , Chandrasekhar Narayan , Satyanarayana Nitta , Sampath Purushothaman , Robert Rosenberg , Christy Tyberg , Roy Yu
IPC分类号： H01L21/768 , H01L23/522 , H01L23/532 , H01L29/40
CPC分类号： H01L21/7682 , H01L21/76829 , H01L23/5222 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.
摘要翻译：在多电平微电子集成电路中，空气包括永久线路电介质，超低K材料通过电介质。在通过清洁热分解除去牺牲材料并通过IC结构中的孔隙率辅助副产物扩散后，将空气供应到线路电平。任选地，空气也包括在通孔级电介质中的孔隙中。通过将空气结合到本发明产生的程度，使层内和层间介电值最小化。

10. 发明申请

US20050023664A1 High density chip carrier with integrated passive devices 有权
标题翻译：具有集成无源器件的高密度芯片载体
公开(公告)号：US20050023664A1
公开(公告)日：2005-02-03
申请号：US10930304
申请日：2004-08-31
申请人： Michael Chudzik , Robert Dennard , Rama Divakaruni , Bruce Kenneth Furman , Rajarao Jammy , Chandrasekhar Narayan , Sampath Purushothaman , Joseph Shepard , Anna Wanda Topol
发明人： Michael Chudzik , Robert Dennard , Rama Divakaruni , Bruce Kenneth Furman , Rajarao Jammy , Chandrasekhar Narayan , Sampath Purushothaman , Joseph Shepard , Anna Wanda Topol
IPC分类号： H01L23/12 , H01L23/50 , H01L25/04 , H01L25/18 , H01L29/40 , H05K1/16 , H05K3/46 , H01L21/44 , H01L23/02 , H01L23/52
CPC分类号： H05K1/162 , H01L23/147 , H01L23/481 , H01L23/49827 , H01L23/50 , H01L2224/16225 , H01L2924/01019 , H01L2924/01055 , H01L2924/01077 , H01L2924/01078 , H01L2924/15311 , H01L2924/157 , H01L2924/30105 , H05K1/167 , H05K3/4602 , H05K2201/09809
摘要： A carrier for a semiconductor component is provided having passive components integrated in its substrate. The passive components include decoupling components, such as capacitors and resistors. A set of connections is integrated to provide a close electrical proximity to the supported components.
摘要翻译：提供了一种用于半导体部件的载体，其具有集成在其基板中的无源部件。无源组件包括去耦组件，例如电容器和电阻器。一组连接被集成以提供与受支持的部件的紧密的电气接近。

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