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1. 发明授权

US07297988B2 Flip chip type nitride semiconductor light emitting device 有权
标题翻译：倒装芯片型氮化物半导体发光器件
公开(公告)号：US07297988B2
公开(公告)日：2007-11-20
申请号：US11319343
申请日：2005-12-28
申请人： Seung Wan Chae , Suk Kil Yoon , Kun Yoo Ko , Hyun Wook Shim , Bong Il Yi
发明人： Seung Wan Chae , Suk Kil Yoon , Kun Yoo Ko , Hyun Wook Shim , Bong Il Yi
IPC分类号： H01L29/22 , H01L33/00
CPC分类号： H01L33/405 , H01L33/32 , H01L33/42
摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.
摘要翻译：本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

2. 发明授权

US07645689B2 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same 失效
标题翻译：具有ESD保护能力的氮化镓系发光器件及其制造方法
公开(公告)号：US07645689B2
公开(公告)日：2010-01-12
申请号：US11812868
申请日：2007-06-22
申请人： Jun Ho Seo , Suk Kil Yoon , Seung Wan Chae
发明人： Jun Ho Seo , Suk Kil Yoon , Seung Wan Chae
IPC分类号： H01L21/20
CPC分类号： H01L33/04 , H01L27/0248 , H01L27/15 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.
摘要翻译：公开了一种氮化镓基发光器件及其制造方法。发光器件包括依次层叠在衬底上的n型GaN基覆盖层，有源层，p型GaN基覆盖层和p侧电极。该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。每个MIM型隧道结包括形成在GaN基覆层上的下金属层，以便接触n型GaN基覆层，形成在下金属层上的绝缘膜和形成的上金属层在绝缘膜上。该器件可防止反向ESD电压，从而可以提高对反向ESD电压的容限，从而提高器件的可靠性。

3. 发明授权

US07319044B2 Nitride semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07319044B2
公开(公告)日：2008-01-15
申请号：US11615863
申请日：2006-12-22
申请人： Young Suk Han , Sung Wook Kim , Suk Kil Yoon
发明人： Young Suk Han , Sung Wook Kim , Suk Kil Yoon
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L33/20 , H01L2224/48091 , H01L2224/48237 , H01L2224/49107 , H01L2924/181 , H01L2933/0016 , H01L2924/00014 , H01L2924/00012
摘要： A nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate, an n-type electrode formed on the electrode region, an activation layer, a p-type nitride semiconductor layer, and a p-type electrode which has a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and a band-shaped extension connected to the bonding pad to extend along a lateral side of the top surface of the p-type nitride semiconductor layer in opposite directions from a connected portion of the extension with the bonding pad.
摘要翻译：氮化物半导体发光器件包括衬底，形成在衬底上的n型氮化物半导体层，并且具有与衬底的顶表面的一个侧面的中心相邻的预定区域的电极区域，形成在电极区上的电极型电极，活化层，p型氮化物半导体层和p型电极，其具有与邻近电极区域的侧面相反的另一侧面的中心附近的接合焊盘，具有来自n型电极的预定空间和连接到接合焊盘的带状延伸部，沿着与p型氮化物半导体层的顶表面的横向侧相反的方向从与延伸部的连接部分接合垫。

4. 发明授权

US07154124B2 Nitride semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07154124B2
公开(公告)日：2006-12-26
申请号：US10859146
申请日：2004-06-03
申请人： Young Suk Han , Sung Wook Kim , Suk Kil Yoon
发明人： Young Suk Han , Sung Wook Kim , Suk Kil Yoon
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L2224/48091 , H01L2224/48237 , H01L2224/49107 , H01L2924/181 , H01L2933/0016 , H01L2924/00014 , H01L2924/00012
摘要： A nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate, an n-type electrode formed on the electrode region, an activation layer, a p-type nitride semiconductor layer, and a p-type electrode which has a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and a band-shaped extension connected to the bonding pad to extend along a lateral side of the top surface of the p-type nitride semiconductor layer in opposite directions from a connected portion of the extension with the bonding pad.
摘要翻译：氮化物半导体发光器件包括衬底，形成在衬底上的n型氮化物半导体层，并且具有与衬底的顶表面的一个侧面的中心相邻的预定区域的电极区域，形成在电极区上的电极型电极，活化层，p型氮化物半导体层和p型电极，其具有与邻近电极区域的侧面相反的另一侧面的中心附近的接合焊盘，具有来自n型电极的预定空间和连接到接合焊盘的带状延伸部，沿着与p型氮化物半导体层的顶表面的横向侧相反的方向从与延伸部的连接部分接合垫。

5. 发明授权

US07301173B2 Group III-nitride light emitting device 有权
标题翻译： III族氮化物发光器件
公开(公告)号：US07301173B2
公开(公告)日：2007-11-27
申请号：US11313967
申请日：2005-12-22
申请人： Hyun Wook Shim , Suk Kil Yoon , Joong Seo Kang , Jong Hak Won
发明人： Hyun Wook Shim , Suk Kil Yoon , Joong Seo Kang , Jong Hak Won
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L33/32 , H01S5/22 , H01S5/305 , H01S5/3213 , H01S5/3216 , H01S5/32341 , H01S2301/173
摘要： The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.
摘要翻译：本发明提供了改善工作电压和静电放电特性的III族氮化物发光器件。 III族氮化物发光器件包括在衬底上依次形成的下n型覆盖层，电流扩展层，上n型覆盖层，有源层和p型覆盖层。电流扩展层包括SiC层。

6. 发明授权

US07250633B2 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same 有权
标题翻译：具有ESD保护能力的氮化镓系发光器件及其制造方法
公开(公告)号：US07250633B2
公开(公告)日：2007-07-31
申请号：US11220844
申请日：2005-09-08
申请人： Jun Ho Seo , Suk Kil Yoon , Seung Wan Chae
发明人： Jun Ho Seo , Suk Kil Yoon , Seung Wan Chae
IPC分类号： H01L27/15
CPC分类号： H01L33/04 , H01L27/0248 , H01L27/15 , H01L33/32 , H01L33/38 , H01L33/44 , H01L2933/0016
摘要： A gallium nitride-based light emitting device, and a method for manufacturing the same are disclosed. The light emitting device comprises an n-type GaN-based clad layer, an active layer, a p-type GaN-based clad layer and a p-side electrode sequentially stacked on a substrate. The device further comprises an n-side electrode formed on one region of the n-type GaN-based clad layer, and two or more MIM type tunnel junctions formed on the other regions of the n-type GaN-based clad layer. Each of the MIM type tunnel junctions comprises a lower metal layer formed on the GaN-based clad layer so as to contact the n-type GaN-based clad layer, an insulating film formed on the lower metal layer, and an upper metal layer formed on the insulating film. The device is protected from reverse ESD voltage, so that tolerance to reverse ESD voltage can be enhanced, thereby improving reliability of the device.
摘要翻译：公开了一种氮化镓基发光器件及其制造方法。发光器件包括依次层叠在衬底上的n型GaN基覆盖层，有源层，p型GaN基覆盖层和p侧电极。该器件还包括形成在n型GaN基覆盖层的一个区域上的n侧电极和形成在n型GaN基覆盖层的其它区域上的两个或更多个MIM型隧道结。每个MIM型隧道结包括形成在GaN基覆层上的下金属层，以便接触n型GaN基覆层，形成在下金属层上的绝缘膜和形成的上金属层在绝缘膜上。该器件可防止反向ESD电压，从而可以提高对反向ESD电压的容限，从而提高器件的可靠性。

7. 发明申请

US20070105261A1 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20070105261A1
公开(公告)日：2007-05-10
申请号：US11615863
申请日：2006-12-22
申请人： Young Suk HAN , Sung Wook KIM , Suk Kil YOON
发明人： Young Suk HAN , Sung Wook KIM , Suk Kil YOON
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L33/20 , H01L2224/48091 , H01L2224/48237 , H01L2224/49107 , H01L2924/181 , H01L2933/0016 , H01L2924/00014 , H01L2924/00012
摘要： Disclosed herein is a nitride semiconductor light emitting device. The nitride semiconductor light emitting device comprises a substrate, an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate, an n-type electrode formed on the electrode region, an activation layer, a p-type nitride semiconductor layer, and a p-type electrode which has a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and a band-shaped extension connected to the bonding pad to extend along a lateral side of the top surface of the p-type nitride semiconductor layer in opposite directions from a connected portion of the extension with the bonding pad.
摘要翻译：这里公开了一种氮化物半导体发光器件。氮化物半导体发光器件包括衬底，形成在衬底上的n型氮化物半导体层，并且设置有与衬底的顶表面的一个侧面的中心相邻的预定区域的电极区域，形成在电极区上的电极型电极，活化层，p型氮化物半导体层和p型电极，其具有与邻近电极区域的侧面相反的另一侧面的中心附近的接合焊盘，具有来自n型电极的预定空间和连接到接合焊盘的带状延伸部，沿着与p型氮化物半导体层的顶表面的横向侧相反的方向从与延伸部的连接部分接合垫。

8. 发明授权

US07183579B2 Gallium nitride (GaN)-based semiconductor light emitting diode and method for manufacturing the same 失效
标题翻译：基于氮化镓（GaN）的半导体发光二极管及其制造方法
公开(公告)号：US07183579B2
公开(公告)日：2007-02-27
申请号：US10811808
申请日：2004-03-30
申请人： Seung Wan Chae , Suk Kil Yoon
发明人： Seung Wan Chae , Suk Kil Yoon
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L33/32 , H01L33/40
摘要： Disclosed are a GaN-based semiconductor light emitting diode and a method for manufacturing the same. The GaN-based semiconductor light emitting diode includes a substrate on which a GaN-based semiconductor material is grown; a lower clad layer formed on the substrate, and made of a first conductive GaN semiconductor material; an active layer formed on a designated portion of the lower clad layer, and made of an undoped GaN semiconductor material; an upper clad layer formed on the active layer, and made of a second conductive GaN semiconductor material; an alloy layer formed on the upper clad layer, and made of an alloy selected from the group consisting of La-based alloys and Ni-based alloys; and an TCO layer formed on the alloy layer. The alloy layer has a high transmittance and forms Ohmic contact, thus reducing a contact resistance.
摘要翻译：公开了一种GaN基半导体发光二极管及其制造方法。 GaN基半导体发光二极管包括其上生长GaN基半导体材料的衬底; 形成在所述基板上并由第一导电GaN半导体材料制成的下包层; 形成在下包层的指定部分上并由未掺杂的GaN半导体材料制成的有源层; 形成在所述有源层上并由第二导电GaN半导体材料制成的上覆层; 合金层，形成在上包层上，由选自由La基合金和Ni基合金组成的组合物制成; 和在合金层上形成的TCO层。合金层具有高透光率，形成欧姆接触，从而降低接触电阻。

9. 发明授权

US07235820B2 Group III-nitride light emitting device 失效
标题翻译： III族氮化物发光器件
公开(公告)号：US07235820B2
公开(公告)日：2007-06-26
申请号：US11315150
申请日：2005-12-23
申请人： Hyun Wook Shim , Suk Kil Yoon , Jae Chul Ro , Seung Wan Chae
发明人： Hyun Wook Shim , Suk Kil Yoon , Jae Chul Ro , Seung Wan Chae
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： The invention provides a group III-nitride light emitting device having improved external quantum efficiency and brightness. The light emitting device comprises an n-type clad layer, an active layer and a p-type clad layer formed in their order. Also, a p-electrode is formed on the p-type clad layer, wherein the p-electrode comprises CuInO2 layer, a transparent conductive oxide layer and a reflective metal layer sequentially formed on the p-type clad layer. The reflective metal layer may be an Ag layer or an Al layer.
摘要翻译：本发明提供了具有改进的外部量子效率和亮度的III族氮化物发光器件。发光器件包括依次形成的n型覆盖层，有源层和p型覆盖层。此外，在p型覆盖层上形成p电极，其中p电极包括CuInO 2层，透明导电氧化物层和顺序地形成在p型上的反射金属层包层反射金属层可以是Ag层或Al层。

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