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1. 发明授权

US07781248B2 Method of manufacturing nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured using the method 有权
标题翻译：使用该方法制造氮化物半导体发光器件和氮化物半导体发光器件的方法
公开(公告)号：US07781248B2
公开(公告)日：2010-08-24
申请号：US12249049
申请日：2008-10-10
申请人： Hyun Wook Shim , Yong Chun Kim , Joong Seo Kang
发明人： Hyun Wook Shim , Yong Chun Kim , Joong Seo Kang
IPC分类号： H01L21/18
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L33/20
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和使用其制造的氮化物半导体发光器件。根据本发明的一个方面的制造氮化物半导体发光器件的方法包括：在衬底上形成掩模层; 去除掩模层的一部分以形成设置为形成发光结构的区域的开口; 通过在掩模层的每个开口上顺序地生长第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，从而形成发光结构; 以及分别形成与第一和第二导电型氮化物半导体层电连接的第一和第二电极。

2. 发明申请

US20090173965A1 METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE MANUFACTURED USING THE METHOD 有权
标题翻译：使用该方法制造的氮化物半导体发光器件和氮化物半导体发光器件的制造方法
公开(公告)号：US20090173965A1
公开(公告)日：2009-07-09
申请号：US12249049
申请日：2008-10-10
申请人： Hyun Wook Shim , Yong Chun Kim , Joong Seo Kang
发明人： Hyun Wook Shim , Yong Chun Kim , Joong Seo Kang
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02639 , H01L21/02642 , H01L33/20
摘要： There are provided a method of manufacturing a nitride semiconductor light emitting device and a nitride semiconductor light emitting device manufactured using the same. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention includes: forming a mask layer on a substrate; removing a portion of the mask layer to form openings provided as regions where light emitting structures are formed; forming a light emitting structure by sequentially growing a first conductivity type nitride semiconductor layer, an active layer, and a second conductivity type nitride semiconductor layer on the substrate through each of the openings of the mask layer; and forming first and second electrodes to be electrically connected to the first and second conductivity type nitride semiconductor layers, respectively.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法和使用其制造的氮化物半导体发光器件。根据本发明的一个方面的制造氮化物半导体发光器件的方法包括：在衬底上形成掩模层; 去除掩模层的一部分以形成设置为形成发光结构的区域的开口; 通过在掩模层的每个开口上顺序地生长第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，从而形成发光结构; 以及分别形成与第一和第二导电型氮化物半导体层电连接的第一和第二电极。

3. 发明申请

US20080099782A1 Nitride semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US20080099782A1
公开(公告)日：2008-05-01
申请号：US11905434
申请日：2007-10-01
申请人： Hyun Wook Shim , Joong Seo Kang , Dong Min Jeon
发明人： Hyun Wook Shim , Joong Seo Kang , Dong Min Jeon
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/14 , H01L33/32
摘要： Provided is a nitride semiconductor light emitting diode (LED) including a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-type contact layer formed on the p-type nitride semiconductor layer and doped with more than 1×102/cm3 of p-type impurities; a transparent oxide electrode formed on the p-type contact layer; a p-electrode formed on the transparent oxide electrode; and an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.
摘要翻译：提供了包括基板的氮化物半导体发光二极管（LED）在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的一部分上的有源层; 形成在有源层上的p型氮化物半导体层; p型接触层，其形成在p型氮化物半导体层上并掺杂有大于1×10 2 / cm 3的p型杂质; 形成在p型接触层上的透明氧化物电极; 形成在透明氧化物电极上的p电极; 以及在没有形成有源层的n型氮化物半导体层上形成的n电极。

4. 发明授权

US08203170B2 Nitride semiconductor light emitting diode 有权
标题翻译：氮化物半导体发光二极管
公开(公告)号：US08203170B2
公开(公告)日：2012-06-19
申请号：US11905434
申请日：2007-10-01
申请人： Hyun Wook Shim , Joong Seo Kang , Dong Min Jeon
发明人： Hyun Wook Shim , Joong Seo Kang , Dong Min Jeon
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/14 , H01L33/32
摘要： Provided is a nitride semiconductor light emitting diode (LED) including a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a portion of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-type contact layer formed on the p-type nitride semiconductor layer and doped with more than 1×1020/cm3 of p-type impurities; a transparent oxide electrode formed on the p-type contact layer; a p-electrode formed on the transparent oxide electrode; and an n-electrode formed on the n-type nitride semiconductor layer where the active layer is not formed.
摘要翻译：提供了包括基板的氮化物半导体发光二极管（LED）在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的一部分上的有源层; 形成在有源层上的p型氮化物半导体层; p型接触层，形成在p型氮化物半导体层上，掺杂有大于1×1020 / cm3的p型杂质; 形成在p型接触层上的透明氧化物电极; 形成在透明氧化物电极上的p电极; 以及在没有形成有源层的n型氮化物半导体层上形成的n电极。

5. 发明授权

US07301173B2 Group III-nitride light emitting device 有权
标题翻译： III族氮化物发光器件
公开(公告)号：US07301173B2
公开(公告)日：2007-11-27
申请号：US11313967
申请日：2005-12-22
申请人： Hyun Wook Shim , Suk Kil Yoon , Joong Seo Kang , Jong Hak Won
发明人： Hyun Wook Shim , Suk Kil Yoon , Joong Seo Kang , Jong Hak Won
IPC分类号： H01L27/15
CPC分类号： H01L33/14 , H01L33/32 , H01S5/22 , H01S5/305 , H01S5/3213 , H01S5/3216 , H01S5/32341 , H01S2301/173
摘要： The present invention provides a group III-nitride light emitting device improved in operating voltage and electrostatic discharge characteristics. The group III-nitride light emitting device comprises a lower n-type clad layer, a current spreading layer, an upper n-type clad layer, an active layer and an p-type clad layer formed in their order on a substrate. The current spreading layer includes a SiC layer.
摘要翻译：本发明提供了改善工作电压和静电放电特性的III族氮化物发光器件。 III族氮化物发光器件包括在衬底上依次形成的下n型覆盖层，电流扩展层，上n型覆盖层，有源层和p型覆盖层。电流扩展层包括SiC层。

6. 发明申请

US20060192207A1 Nitride semiconductor light emitting device 审中-公开
标题翻译：氮化物半导体发光器件
公开(公告)号：US20060192207A1
公开(公告)日：2006-08-31
申请号：US11247152
申请日：2005-10-12
申请人： Hyun Wook Shim , Jong Hak Won , Jin Sub Park , Joong Seo Kang , Hyun Jin Lee
发明人： Hyun Wook Shim , Jong Hak Won , Jin Sub Park , Joong Seo Kang , Hyun Jin Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/04 , H01L33/32
摘要： Provided is a nitride semiconductor light emitting device having enhanced output power and resistance to electrostatic discharge. The light emitting device comprises an n-side contact layer formed on a substrate, a current diffusion layer formed on the n-side contact layer, an active layer formed on the current diffusion layer, and a p-type clad layer formed on the active layer. The current diffusion layer is formed by alternately stacking at least one first InAlGaN layer having a higher electron concentration than that of the n-side contact layer and at least one second InAlGaN layer having a lower electron concentration than that of the n-side contact layer.
摘要翻译：提供了具有增强的输出功率和耐静电放电的氮化物半导体发光器件。发光器件包括形成在衬底上的n侧接触层，形成在n侧接触层上的电流扩散层，形成在电流扩散层上的有源层和形成在有源层上的p型覆盖层层。通过交替堆叠具有比n侧接触层的电子浓度高的至少一个第一InAlGaN层和比n侧接触层的电子浓度低的至少一个第二InAlGaN层形成电流扩散层。

7. 发明授权

US07462876B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07462876B2
公开(公告)日：2008-12-09
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译：本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

8. 发明申请

US20070145406A1 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US20070145406A1
公开(公告)日：2007-06-28
申请号：US11584503
申请日：2006-10-23
申请人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
发明人： Sang Heon Han , Bang Won Oh , Je Won Kim , Hyun Wook Shim , Joong Seo Kang , Dong Ju Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , H01L33/32
摘要： Disclosed herein is a nitride semiconductor light emitting device, which is improved in luminance and reliability. The light emitting device, comprises an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer sequentially formed on a substrate, an n-side electrode formed on a portion of an upper surface of the n-type nitride semiconductor layer, and at least one intermediate layer formed between the substrate and the n-type nitride semiconductor layer. The intermediate layer has a multilayer structure of three or more layers having different band-gaps, and is positioned below the n-side electrode.
摘要翻译：本文公开了一种氮化物半导体发光器件，其亮度和可靠性得到改善。发光器件包括依次形成在衬底上的n型氮化物半导体层，有源层和p型氮化物半导体层，形成在n型氮化物的上表面的一部分上的n侧电极半导体层以及形成在基板和n型氮化物半导体层之间的至少一个中间层。中间层具有三层以上具有不同带隙的层的多层结构，位于n侧电极的下方。

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