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1. 发明授权

US5491603A Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer 失效
标题翻译：确定脱扣电压的方法，其消除静电卡盘和晶片之间的剩余静电力
公开(公告)号：US5491603A
公开(公告)日：1996-02-13
申请号：US235012
申请日：1994-04-28
申请人： Manoocher Birang , Jian Ding , Hyman J. Levinstein
发明人： Manoocher Birang , Jian Ding , Hyman J. Levinstein
IPC分类号： B23Q3/15 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833
摘要： The invention is embodied in a method of determining an optimum de-chucking voltage for nullifying residual electrostatic forces on a wafer in an electrostatic chuck for removal of the wafer from the chuck, including holding the wafer on the electrostatic chuck by applying an electrostatic potential to the chuck, introducing a gas between the wafer and the chuck, reducing the electrostatic potential of the chuck while observing a rate of leakage of the gas from between the wafer and the chuck, and recording as the optimum dechucking voltage the value of the electrostatic potential obtaining when the rate of leakage exceeds a predetermined threshold.
摘要翻译：本发明体现于一种确定最佳去夹紧电压的方法，用于使静电卡盘中的晶片上的残留静电力无效，从卡盘移除晶片，包括通过施加静电电位将晶片保持在静电卡盘上卡盘，在晶片和卡盘之间引入气体，同时观察卡盘的气体泄漏速率，同时减小卡盘的静电电位，并记录最佳的脱扣电压为静电电位值当泄漏速率超过预定阈值时获得。

2. 发明授权

US4937643A Devices having tantalum silicide structures 失效
标题翻译：具有硅化钽结构的器件
公开(公告)号：US4937643A
公开(公告)日：1990-06-26
申请号：US78013
申请日：1987-07-27
申请人： Jean S. Deslauriers , Hyman J. Levinstein
发明人： Jean S. Deslauriers , Hyman J. Levinstein
IPC分类号： H01L21/28 , H01L21/3213
CPC分类号： H01L21/32137 , H01L21/28061
摘要： A method for fabricating a device which includes a tantalum silicide structure, and which is essentially free of conductive etch residues, is disclosed. The method includes the steps of depositing tantalum and silicon onto a substrate, patterning the tantalum and silicon, and then sintering the patterned tantalum and silicon to form a patterned layer of tantalum silicide.
摘要翻译：公开了一种制造包括硅化钽结构并且基本上不含导电蚀刻残留物的器件的方法。该方法包括以下步骤：将钽和硅沉积到衬底上，图案化钽和硅，然后烧结图案化的钽和硅以形成图案化的硅化钽层。

3. 发明授权

US4427516A Apparatus and method for plasma-assisted etching of wafers 失效
标题翻译：用于等离子体辅助蚀刻晶片的装置和方法
公开(公告)号：US4427516A
公开(公告)日：1984-01-24
申请号：US471901
申请日：1983-03-04
申请人： Hyman J. Levinstein , Frederick Vratny
发明人： Hyman J. Levinstein , Frederick Vratny
IPC分类号： H01J37/32 , H01J37/34 , H01L21/311 , C23C15/00
CPC分类号： H01J37/32559 , H01J37/34 , H01L21/31116 , H01J2237/20 , Y10S156/914 , Y10S156/917
摘要： In a plasma-assisted etching apparatus and method designed to pattern silicon dioxide in a plasma derived from a mixture of trifluoromethane and ammonia, surfaces in the reaction chamber are coated with a layer of silicon. Contamination of wafers during the etching process is thereby substantially reduced. In practice, this leads to a significant increase in the yield of acceptable chips per wafer.
摘要翻译：在等离子体辅助蚀刻装置和设计用于在三氟甲烷和氨的混合物中产生的等离子体中排列二氧化硅的方法，反应室中的表面涂覆有一层硅。因此，在蚀刻过程中晶片的污染因此显着降低。在实践中，这导致每个晶片可接受的芯片的产量显着增加。

4. 发明授权

US4332839A Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide 失效
标题翻译：制造具有形成Ti或Ta硅化物的集成半导体电路结构的方法
公开(公告)号：US4332839A
公开(公告)日：1982-06-01
申请号：US227133
申请日：1981-01-22
申请人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
发明人： Hyman J. Levinstein , Shyam P. Murarka , Ashok K. Sinha
IPC分类号： H01L21/28 , H01L21/768 , H01L23/532 , H01L29/49 , H01L21/283
CPC分类号： H01L23/53271 , H01L21/28052 , H01L21/76889 , H01L29/4933 , H01L2924/0002 , Y10S148/02 , Y10S148/147
摘要： The compounds TiSi.sub.2 and TaSi.sub.2 have been found to be suitable substitutes for polysilicon layers in semiconductor integrated circuits. Suitable conducting properties of the compounds are ensured by providing a relatively thin substrate of polysilicon.
摘要翻译：已经发现化合物TiSi 2和TaSi 2在半导体集成电路中是多晶硅层的合适的替代物。通过提供相对薄的多晶硅基质来确保化合物的合适的导电性能。

5. 再颁专利

USRE30244E Radial flow reactor including glow discharge limitting shield 失效
标题翻译：径流反应堆包括辉光放电限制屏蔽
公开(公告)号：USRE30244E
公开(公告)日：1980-04-01
申请号：US946843
申请日：1978-09-28
申请人： Frank B. Alexander, Jr. , Cesar D. Capio , Victor E. Hauser, Jr. , Hyman J. Levinstein , Cyril J. Mogab , Ashok K. Sinha , Richard S. Wagner
发明人： Frank B. Alexander, Jr. , Cesar D. Capio , Victor E. Hauser, Jr. , Hyman J. Levinstein , Cyril J. Mogab , Ashok K. Sinha , Richard S. Wagner
IPC分类号： C23C16/509
CPC分类号： C23C16/5096
摘要： An improved radio frequency (rf) powered radial flow cylindrical reactor utilizes a gas shield which substantially limits the glow plasma discharge reaction to a section of the reactor over the semiconductor substrates which are to be coated. The gas shield permits the use of higher rf input power which contributes to the formation of protective films that have desirable physical and electrical characteristics.

6. 发明授权

US06217655B1 Stand-off pad for supporting a wafer on a substrate support chuck 失效
标题翻译：用于在基板支撑卡盘上支撑晶片的支撑垫
公开(公告)号：US06217655B1
公开(公告)日：2001-04-17
申请号：US08791941
申请日：1997-01-31
申请人： Ananda H. Kumar , Shamouil Shamouilian , Hyman J. Levinstein , Vijay Parkhe
发明人： Ananda H. Kumar , Shamouil Shamouilian , Hyman J. Levinstein , Vijay Parkhe
IPC分类号： B05C1300
CPC分类号： H01L21/6833 , H01L21/6875
摘要： A stand-off pad, and method of fabricating the same, for supporting a workpiece in a spaced apart relation to a workpiece support chuck. More specifically, the wafer stand-off pad is fabricated of a polymeric material, such as polyimide, which is disposed upon the support surface of the chuck. The stand-off pad maintains a wafer, or other workpiece, in a spaced apart relation to the support surface of the chuck. The distance between the underside surface of the wafer and the chuck is defined by the thickness of the stand-off pad. This distance should be larger than the expected diameter of contaminant particles that may lie on the surface of the chuck. In this manner, the contaminant particles do not adhere to the underside of the wafer during processing and the magnitude of the chucking voltage is maintained between the workpiece and the chuck.
摘要翻译：支撑垫及其制造方法，用于以与工件支撑卡盘间隔开的关系支撑工件。更具体地说，晶片支座由诸如聚酰亚胺的聚合材料制成，其设置在卡盘的支撑表面上。支座将保持晶片或其它工件与卡盘的支撑表面间隔开。晶片的下表面和卡盘之间的距离由支座的厚度限定。该距离应大于可能位于卡盘表面上的污染物颗粒的预期直径。以这种方式，污染物颗粒在处理期间不粘附到晶片的下侧，并且夹持电压的幅度保持在工件和卡盘之间。

7. 发明授权

US5986875A Puncture resistant electrostatic chuck 失效
标题翻译：耐刺穿静电卡盘
公开(公告)号：US5986875A
公开(公告)日：1999-11-16
申请号：US015802
申请日：1998-01-29
申请人： Arik Donde , Hyman J. Levinstein , Robert W. Wu , Andreas Hegedus , Edwin C. Weldon , Shamouil Shamouilian , Jon T. Clinton , Surinder S. Bedi
发明人： Arik Donde , Hyman J. Levinstein , Robert W. Wu , Andreas Hegedus , Edwin C. Weldon , Shamouil Shamouilian , Jon T. Clinton , Surinder S. Bedi
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6831 , H01L21/6833 , H02N13/00 , Y10T279/23
摘要： A puncture resistant electrostatic chuck (20) is described. The chuck (20) comprises at least one electrode (25); and a composite insulator (30) covering the electrode. The composite insulator comprises a matrix material having a conformal holding surface (50) capable of conforming to the substrate (35) under application of an electrostatic force generated by the electrode to reduce leakage of heat transfer fluid held between the substrate and the holding surface. A hard puncture resistant layer, such a layer of fibers or an aromatic polyamide layer, is positioned below the holding surface (50) and is sufficiently hard to increase the puncture resistance of the composite insulator.
摘要翻译：描述了一种抗穿刺静电卡盘（20）。卡盘（20）包括至少一个电极（25）; 和覆盖电极的复合绝缘体（30）。复合绝缘体包括具有能够在施加电极产生的静电力的同时保持基板（35）的共形保持表面（50）的基体材料，以减少保持在基板和保持表面之间的传热流体的泄漏。这种纤维层或芳香族聚酰胺层的耐穿刺层位于保持面（50）的下方，并且足够难以提高复合绝缘子的抗穿刺性。

8. 发明授权

US5745331A Electrostatic chuck with conformal insulator film 失效
标题翻译：带保形绝缘膜的静电吸盘
公开(公告)号：US5745331A
公开(公告)日：1998-04-28
申请号：US381786
申请日：1995-01-31
申请人： Shamouil Shamouilian , Sasson Somekh , Hyman J. Levinstein , Manoocher Birang , Semyon Sherstinsky , John F. Cameron
发明人： Shamouil Shamouilian , Sasson Somekh , Hyman J. Levinstein , Manoocher Birang , Semyon Sherstinsky , John F. Cameron
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6831 , H01L21/6833 , H02N13/00
摘要： An electrostatic chuck (20) for holding a substrate (75) comprises (i) a base (80) having an upper surface (95) with grooves (85) therein, the grooves (85) sized and distributed for holding coolant for cooling a substrate (75), and (ii) a substantially continuous insulator film (45) conformal to the grooves (85) on upper surface (95) of the base (80). The base (80) can be electrically conductive and capable of serving as the electrode (50) of the chuck (20), or the electrode (50) can be embedded in the insulator film (45). The insulator film (45) has a dielectric breakdown strength sufficiently high that when a substrate (75) placed on the chuck (20) and electrically biased with respect to the electrode (50), electrostatic charge accumulates in the substrate (75) and in the electrode (50) forming an electrostatic force that attracts and holds the substrate (75) to the chuck (20). Preferably the chuck (20) is fabricated using a pressure forming process, and more preferably using a pressure differential process.
摘要翻译：用于保持基板（75）的静电卡盘（20）包括（i）具有在其中具有凹槽（85）的上表面（95）的基部（80），所述凹槽（85）的尺寸和分布以保持用于冷却的冷却剂衬底（75），和（ii）与基座（80）的上表面（95）上的凹槽（85）共形的基本上连续的绝缘膜（45）。基座（80）可以是导电的并且能够用作卡盘（20）的电极（50），或者电极（50）可以嵌入绝缘膜（45）中。绝缘体膜（45）具有足够高的绝缘击穿强度，当放置在卡盘（20）上并相对于电极（50）电偏置的基板（75）时，静电电荷积聚在基板（75）中所述电极（50）形成吸引并保持所述基板（75）到所述卡盘（20）的静电力。优选地，使用压力成形方法制造卡盘（20），更优选使用压差法。

9. 发明授权

US5729423A Puncture resistant electrostatic chuck 失效
公开(公告)号：US5729423A
公开(公告)日：1998-03-17
申请号：US755716
申请日：1996-11-25
申请人： Arik Donde , Hyman J. Levinstein , Robert W. Wu , Andreas Hegedus , Edwin C. Weldon , Shamouil Shamouilian , Jon T. Clinton , Surinder S. Bedi
发明人： Arik Donde , Hyman J. Levinstein , Robert W. Wu , Andreas Hegedus , Edwin C. Weldon , Shamouil Shamouilian , Jon T. Clinton , Surinder S. Bedi
IPC分类号： B23Q3/15 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6831 , H01L21/6833 , H02N13/00 , Y10T279/23
摘要： A puncture resistant electrostatic chuck (20) is described. The chuck (20) comprises at least one electrode (25); and a composite insulator (30) covering the electrode. The composite insulator comprises a matrix material having a conformal holding surface (50) capable of conforming to the substrate (35) under application of an electrostatic force generated by the electrode to reduce leakage of heat transfer fluid held between the substrate and the holding surface. A hard puncture resistant layer, such a layer of fibers or an aromatic polyamide layer, is positioned below the holding surface (50) and is sufficiently hard to increase the puncture resistance of the composite insulator.

10. 发明授权

US4522842A Boron nitride X-ray masks with controlled stress 失效
标题翻译：具有受控应力的氮化硼X射线掩模
公开(公告)号：US4522842A
公开(公告)日：1985-06-11
申请号：US416290
申请日：1982-09-09
申请人： Hyman J. Levinstein , Shyam P. Murarka , David S. Williams
发明人： Hyman J. Levinstein , Shyam P. Murarka , David S. Williams
IPC分类号： C23C16/56 , G03F1/22 , B05D5/00
CPC分类号： G03F1/22 , C23C16/56
摘要： It has been found that stress in X-ray transparent films used to form masks for X-ray lithography also cause distortions of the film and of the high-resolution X-ray-absorptive pattern formed thereon. A method is disclosed which anneals boron nitride films for use in X-ray masks in such a way as to control stress.
摘要翻译：已经发现，用于形成用于X射线光刻的掩模的X射线透明膜中的应力也引起膜上形成的高分辨率X射线吸收图案的变形。公开了一种以控制应力的方式退火用于X射线掩模的氮化硼膜的方法。

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