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1. 发明授权

US09698284B2 Individual finger isolation through spot application of a dielectric in an optoelectronic device 有权
公开(公告)号：US09698284B2
公开(公告)日：2017-07-04
申请号：US13222393
申请日：2011-08-31
申请人： Andreas Hegedus
发明人： Andreas Hegedus
IPC分类号： H01L31/02 , H02S50/10 , H01L21/66 , H01L31/0224 , H01L31/05 , H01L31/0216
CPC分类号： H01L31/022433 , H01L22/22 , H01L31/02168 , H01L31/0508 , H02S50/10 , Y02E10/50
摘要： An optoelectronic device including at least one of a solar device, a semiconductor device, and an electronic device. The device includes a semiconductor unit. A plurality of metal fingers is disposed on a surface of the semiconductor unit for electrical conduction. Each of the metal fingers corresponds to a section of the optoelectronic device. A plurality of pad areas is available for connection to a bus bar, wherein each of the metal fingers is connected to a corresponding pad area for forming an electrical contact. The optoelectronic device includes a bad section, wherein the bad section is associated with a compromised metal finger and a compromised pad area. A dielectric spot coating is disposed above the compromised pad area to electrically isolate the bad section.

2. 发明授权

US09121096B2 Concentric showerhead for vapor deposition 有权
标题翻译：用于气相沉积的同心花洒
公开(公告)号：US09121096B2
公开(公告)日：2015-09-01
申请号：US12576797
申请日：2009-10-09
申请人： Andreas Hegedus
发明人： Andreas Hegedus
IPC分类号： C23C16/00 , C23C16/30 , C23C16/455 , C23C16/458 , C23C16/48 , C23C16/54
CPC分类号： C23C16/301 , C23C16/45519 , C23C16/45576 , C23C16/4583 , C23C16/481 , C23C16/54 , Y10T137/87571
摘要： Embodiments of the invention generally relate to a concentric gas manifold assembly used in deposition reactor or system during a vapor deposition process. In one embodiment, the manifold assembly has an upper section coupled to a middle section coupled to a lower section. The middle section contains an inlet, a manifold extending from the inlet to a passageway, and a tube extending along a central axis and containing a channel along the central axis and in fluid communication with the passageway. The lower section of the manifold assembly contains a second manifold extending from a second inlet to a second passageway and an opening concentric with the central axis. The tube extends to the opening to form a second channel between the tube and an edge of the opening. The second channel is concentric with the central axis and is in fluid communication with the second passageway.
摘要翻译：本发明的实施例一般涉及在气相沉积过程中用于沉积反应器或系统中的同心气体歧管组件。在一个实施例中，歧管组件具有联接到联接到下部的中部的上部。中间部分包含入口，从入口延伸到通道的歧管以及沿着中心轴延伸并且沿着中心轴线包含通道并与通道流体连通的管。歧管组件的下部包含从第二入口延伸到第二通道的第二歧管和与中心轴线同心的开口。管延伸到开口以在管和开口的边缘之间形成第二通道。第二通道与中心轴线同心并且与第二通道流体连通。

3. 发明授权

US08937244B2 Photovoltaic device 有权
标题翻译：光伏装置
公开(公告)号：US08937244B2
公开(公告)日：2015-01-20
申请号：US12605108
申请日：2009-10-23
申请人： Isik C. Kizilyalli , Melissa Archer , Harry Atwater , Thomas J. Gmitter , Gang He , Andreas Hegedus , Gregg Higashi
发明人： Isik C. Kizilyalli , Melissa Archer , Harry Atwater , Thomas J. Gmitter , Gang He , Andreas Hegedus , Gregg Higashi
IPC分类号： H01L31/00 , H01L31/0304 , H01L31/0236 , H01L31/0735
CPC分类号： H01L31/0304 , H01L31/022441 , H01L31/0236 , H01L31/02363 , H01L31/03046 , H01L31/065 , H01L31/0682 , H01L31/0693 , H01L31/0735 , Y02E10/50 , Y02E10/52 , Y02E10/544
摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
摘要翻译：提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。根据本发明的实施例的光伏（PV）单元可以具有通过外延剥离（ELO）制造的非常薄的吸收层，所有电触点位于PV装置的背面以避免阴影，和/或使用扩散器和反射器的前侧和后侧光捕获以增加入射到PV单元的前侧的光子的吸收。可以将多个PV单元组合成PV组，并且可以将PV组阵列连接以形成具有在低温下施加的薄金属或导电聚合物的PV模块。与常规太阳能电池相比，这样的创新可以允许PV装置的更高的效率和灵活性。

4. 发明授权

US08852696B2 Method for vapor deposition 有权
标题翻译：气相沉积方法
公开(公告)号：US08852696B2
公开(公告)日：2014-10-07
申请号：US12725296
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
IPC分类号： C23C16/00 , C30B25/12 , H01L21/677 , C30B29/40 , C23C16/54 , C30B29/42 , C30B25/02 , H01L21/67 , C23C16/48 , C23C16/455 , C23C16/458 , C23C16/44
CPC分类号： C23C16/4583 , C23C16/4412 , C23C16/45519 , C23C16/45565 , C23C16/481 , C23C16/54 , C30B25/025 , C30B25/12 , C30B29/40 , C30B29/42 , H01L21/67115 , H01L21/67784
摘要： Chemical vapor deposition (CVD) processes include, in one embodiment, a method for processing a wafer within a vapor deposition reactor comprising heating at least one wafer disposed on a wafer carrier by exposing a lower surface of the wafer carrier to radiation emitted from a lamp assembly and flowing a liquid through a passageway extending throughout the reactor to maintain the reactor lid assembly at a predetermined temperature, such as within a range from about 275° C. to about 325° C. The method further includes traversing the wafer carrier along a wafer carrier track through at least a chamber containing a showerhead assembly and an isolator assembly and another chamber containing a showerhead assembly and an exhaust assembly, and removing gases from the reactor through the exhaust assembly.
摘要翻译：在一个实施方案中，化学气相沉积（CVD）方法包括在气相沉积反应器内处理晶片的方法，包括通过将晶片载体的下表面暴露于从灯发出的辐射而加热设置在晶片载体上的至少一个晶片组装和流动通过延伸穿过整个反应器的通道的液体，以将反应器盖组件保持在预定温度，例如在约275℃至约325℃的范围内。该方法还包括沿着通过至少一个包含喷头组件和隔离器组件的腔室以及包含喷头组件和排气组件的另一腔室以及通过排气组件从反应器中除去气体的晶片载体轨道。

5. 发明授权

US08602707B2 Methods and apparatus for a chemical vapor deposition reactor 有权
标题翻译：化学气相沉积反应器的方法和装置
公开(公告)号：US08602707B2
公开(公告)日：2013-12-10
申请号：US12475169
申请日：2009-05-29
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus , Melissa Archer , Harry Atwater , Stewart Sonnenfeldt
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus , Melissa Archer , Harry Atwater , Stewart Sonnenfeldt
IPC分类号： H01L21/677
CPC分类号： C30B25/08 , B65G2207/06 , C23C16/45519 , C23C16/4583 , C23C16/54 , C30B25/025 , C30B25/10 , C30B25/12 , C30B25/14 , C30B25/18 , C30B29/40 , C30B29/42 , H01L21/67109 , H01L21/67784
摘要： Embodiments of the invention generally relate to a levitating substrate carrier or support. In one embodiment, a substrate carrier for supporting and carrying at least one substrate or wafer is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. In another embodiment, the substrate carrier includes at least open indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface. Each indentation pocket may be rectangular and have four side walls extending substantially perpendicular to the lower surface. In another embodiment, a method for levitating substrates disposed on a substrate carrier is provided which includes exposing the lower surface of a substrate carrier to a gas stream, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.
摘要翻译：本发明的实施方案一般涉及悬浮底物载体或载体。在一个实施例中，提供了用于支撑和承载至少一个衬底或晶片的衬底载体，其包括包含上表面和下表面的衬底载体主体，以及设置在下表面内的至少一个压痕穴。在另一个实施例中，衬底载体在上表面内至少包括开放的凹陷区域，以及设置在下表面内的至少两个压痕穴。每个压痕袋可以是矩形的并且具有基本上垂直于下表面延伸的四个侧壁。在另一个实施例中，提供一种用于浮置设置在基板载体上的基板的方法，其包括使基板载体的下表面暴露于气流，在基板载体下形成气垫，使基板载体悬浮在处理室内，以及沿着处理室内的路径移动衬底载体。

6. 发明申请

US20110048532A1 PHOTOVOLTAIC DEVICE 有权
标题翻译：光电器件
公开(公告)号：US20110048532A1
公开(公告)日：2011-03-03
申请号：US12940876
申请日：2010-11-05
申请人： Isik C. KIZILYALLI , Melissa ARCHER , Harry ATWATER , Thomas J. GMITTER , Gang HE , Andreas HEGEDUS , Gregg HIGASHI
发明人： Isik C. KIZILYALLI , Melissa ARCHER , Harry ATWATER , Thomas J. GMITTER , Gang HE , Andreas HEGEDUS , Gregg HIGASHI
IPC分类号： H01L31/0304 , H01L31/0216 , H01L31/0232
CPC分类号： H01L31/0304 , H01L31/022441 , H01L31/0236 , H01L31/02363 , H01L31/03046 , H01L31/065 , H01L31/0682 , H01L31/0693 , H01L31/0735 , Y02E10/50 , Y02E10/52 , Y02E10/544
摘要： Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. A photovoltaic (PV) unit, according to embodiments of the invention, may have a very thin absorber layer produced by epitaxial lift-off (ELO), all electrical contacts positioned on the back side of the PV device to avoid shadowing, and/or front side and back side light trapping employing a diffuser and a reflector to increase absorption of the photons impinging on the front side of the PV unit. Several PV units may be combined into PV banks, and an array of PV banks may be connected to form a PV module with thin strips of metal or conductive polymer applied at low temperature. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells.
摘要翻译：提供了与常规太阳能电池相比，用于将诸如太阳能的电磁辐射转换成电能的方法和装置，其效率提高。根据本发明的实施例的光伏（PV）单元可以具有通过外延剥离（ELO）制造的非常薄的吸收层，所有电触点位于PV装置的背面以避免阴影，和/或使用扩散器和反射器的前侧和后侧光捕获以增加入射到PV单元的前侧的光子的吸收。可以将多个PV单元组合成PV组，并且可以将PV组阵列连接以形成具有在低温下施加的薄金属或导电聚合物的PV模块。与常规太阳能电池相比，这样的创新可以允许PV装置的更高的效率和灵活性。

7. 发明申请

US20100147370A1 MULTIPLE STACK DEPOSITION FOR EPITAXIAL LIFT OFF 有权
标题翻译：多余堆积沉积物用于外延起飞
公开(公告)号：US20100147370A1
公开(公告)日：2010-06-17
申请号：US12632565
申请日：2009-12-07
申请人： Gang He , Andreas Hegedus
发明人： Gang He , Andreas Hegedus
IPC分类号： H01L31/0304 , H01L29/205 , H01L21/20 , H01L31/18
CPC分类号： C30B29/42 , C30B29/40 , C30B33/06 , H01L21/02463 , H01L21/02546 , H01L31/0304 , H01L31/03046 , H01L31/0725 , H01L31/0735 , H01L31/184 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： Embodiments of the invention are provided for a thin film stack containing a plurality of epitaxial stacks disposed on a substrate and a method for forming such a thin film stack. In one embodiment, the epitaxial stack contains a first sacrificial layer disposed over the substrate, a first epitaxial film disposed over the first sacrificial layer, a second sacrificial layer disposed over the first epitaxial film, and a second epitaxial film disposed over the second sacrificial layer. The thin film stack may further contain additional epitaxial films disposed over sacrificial layers. Generally, the epitaxial films contain gallium arsenide alloys and the sacrificial layers contain aluminum arsenide alloys. Methods provide the removal of the epitaxial films from the substrate by etching away the sacrificial layers during an epitaxial lift off (ELO) process. The epitaxial films are useful as photovoltaic cells, laser diodes, or other devices or materials.
摘要翻译：提供本发明的实施例用于包含设置在基板上的多个外延叠层的薄膜堆叠和用于形成这种薄膜叠层的方法。在一个实施例中，外延堆叠包含设置在衬底上的第一牺牲层，设置在第一牺牲层上的第一外延膜，设置在第一外延膜上的第二牺牲层，以及设置在第二牺牲层上的第二外延膜。薄膜叠层还可以包含设置在牺牲层上的额外的外延膜。通常，外延膜含有砷化镓合金，牺牲层含有砷化铝合金。方法提供了在外延剥离（ELO）工艺期间通过蚀刻掉牺牲层从衬底去除外延膜。外延膜可用作光伏电池，激光二极管或其它器件或材料。

8. 发明申请

US20090321885A1 EPITAXIAL LIFT OFF STACK HAVING A UNIVERSALLY SHRUNK HANDLE AND METHODS THEREOF 有权
标题翻译：具有全能的SHRUNK手柄的外墙起吊架及其方法
公开(公告)号：US20090321885A1
公开(公告)日：2009-12-31
申请号：US12475411
申请日：2009-05-29
申请人： Melissa Archer , Harry Atwater , Thomas Gmitter , Gang He , Andreas Hegedus , Gregg Higashi , Stewart Sonnenfeldt
发明人： Melissa Archer , Harry Atwater , Thomas Gmitter , Gang He , Andreas Hegedus , Gregg Higashi , Stewart Sonnenfeldt
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： H01L21/7813 , H01L21/02543 , H01L21/02546 , H01L21/30612 , H01L21/6835 , H01L21/6836 , H01L21/7806 , H01L2221/6835 , H01L2221/68381
摘要： Embodiments of the invention generally relate to epitaxial lift off (ELO) thin films and devices and methods used to form such films and devices. In one embodiment, a method for forming an ELO thin film is provided which includes depositing an epitaxial material over a sacrificial layer on a substrate, adhering a universally shrinkable support handle onto the epitaxial material, wherein the universally shrinkable support handle contains a shrinkable material, and shrinking the support handle to form tension in the support handle and compression in the epitaxial material during a shrinking process. The method further includes removing the sacrificial layer during an etching process, peeling the epitaxial material from the substrate while forming an etch crevice therebetween, and bending the support handle to have substantial curvature.
摘要翻译：本发明的实施例一般涉及外延剥离（ELO）薄膜，以及用于形成这种膜和装置的装置和方法。在一个实施例中，提供了一种用于形成ELO薄膜的方法，其包括在衬底上的牺牲层上沉积外延材料，将普遍可收缩的支撑手柄附着在外延材料上，其中普遍可收缩的支撑手柄包含可收缩材料，并且收缩支撑手柄以在收缩过程中在支撑手柄中形成张力并在外延材料中压缩。该方法还包括在蚀刻工艺期间去除牺牲层，在衬底之间形成蚀刻缝隙并将支撑柄弯曲成具有实质曲率的同时从衬底剥离外延材料。

9. 发明申请

US20070093013A1 METHOD FOR FABRICATING A GATE DIELECTRIC OF A FIELD EFFECT TRANSISTOR 有权
标题翻译：用于制造场效应晶体管的栅极电介质的方法
公开(公告)号：US20070093013A1
公开(公告)日：2007-04-26
申请号：US11381960
申请日：2006-05-05
申请人： Thai Chua , Cory Czarnik , Andreas Hegedus , Christopher Olsen , Khaled Ahmed , Philip Kraus
发明人： Thai Chua , Cory Czarnik , Andreas Hegedus , Christopher Olsen , Khaled Ahmed , Philip Kraus
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L21/3144 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02211 , H01L21/02238 , H01L21/02252 , H01L21/02255 , H01L21/02271 , H01L21/02274 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/28185 , H01L21/28202 , H01L21/31662 , H01L21/3185 , H01L21/823857 , H01L29/518
摘要： A method for fabricating a gate dielectric of a field effect transistor is disclosed herein. In one embodiment, the method includes the steps of removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, forming an oxide layer over the gate dielectric layer, and annealing the layers and underlying thermal oxide/silicon interface. Optionally, the oxide layer may be nitridized prior to forming the gate dielectric layer. In one embodiment, at least portions of the method are performed using at least one processing reactor arranged on a cluster tool. In one embodiment, the oxide layer on the substrate is formed by depositing the oxide layer and the oxide layer on the gate dielectric layer is formed by oxidizing at least a portion of the gate dielectric layer using an oxygen-containing plasma. In another embodiment, the oxide layer on the substrate is formed by depositing the oxide layer and the oxide layer on the gate dielectric layer is formed by forming a thermal oxide layer, i.e., depositing the oxide layer on the gate dielectric layer.
摘要翻译：本文公开了一种用于制造场效应晶体管的栅极电介质的方法。在一个实施例中，该方法包括以下步骤：去除自然氧化物层，形成氧化物层，在氧化物层上形成栅极电介质层，在栅极电介质层上形成氧化物层，以及退火层和下面的热氧化物/ 硅接口。任选地，氧化物层可以在形成栅极电介质层之前被氮化。在一个实施例中，使用布置在群集工具上的至少一个处理反应器来执行该方法的至少部分。在一个实施例中，通过沉积氧化物层形成衬底上的氧化物层，并且通过使用含氧等离子体氧化至少一部分栅极电介质层来形成栅极电介质层上的氧化物层。在另一个实施例中，通过沉积氧化物层而形成衬底上的氧化物层，并且通过形成热氧化物层，即将氧化物层沉积在栅极电介质层上，形成栅极电介质层上的氧化物层。

10. 发明授权

US09169554B2 Wafer carrier track 有权
标题翻译：晶圆载轨
公开(公告)号：US09169554B2
公开(公告)日：2015-10-27
申请号：US12725308
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
IPC分类号： C23C16/54 , C23C14/56 , H01L21/677 , C23C16/44 , C23C16/455 , C23C16/458 , C23C16/48 , C30B25/02 , C30B25/12 , C30B29/40 , C30B29/42 , C30B35/00 , H01L21/67
CPC分类号： C23C16/4412 , C23C16/45519 , C23C16/45565 , C23C16/4583 , C23C16/481 , C23C16/54 , C30B25/025 , C30B25/12 , C30B29/40 , C30B29/42 , C30B35/005 , H01L21/67115 , H01L21/67784
摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may independently contain quartz, and in some examples, may be fused together.
摘要翻译：本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。在一个实施例中，提供了用于在气相沉积反应器系统内悬浮和横穿晶片载体的晶片载体轨道，其包括在其间形成有气体腔的轨道组件的上部和下部。引导路径沿着上部的上表面延伸并且在引导路径上并且彼此平行的两个侧表面之间延伸。沿着引导路径的多个气孔从上部的上表面延伸穿过上部并进入气体腔。在一些示例中，轨道组件的上部和下部可以独立地包含石英，并且在一些示例中可以将其熔合在一起。

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