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1. 发明授权

US08503072B2 Gain-clamped semiconductor optical amplifier 失效
标题翻译：增益钳位半导体光放大器
公开(公告)号：US08503072B2
公开(公告)日：2013-08-06
申请号：US10548880
申请日：2003-12-26
申请人： Hiroshi Hatakeyama
发明人： Hiroshi Hatakeyama
IPC分类号： H01S4/00
CPC分类号： H01S5/5072 , H01S5/026 , H01S5/0655 , H01S5/0683 , H01S5/1078 , H01S5/4025 , H01S5/4068
摘要： A gain-clamped semiconductor optical amplifier according to the present invention has a pair of DBR areas 2, 3 disposed in sandwiching relation to gain area 1 for amplifying guided light. A portion of a waveguide of gain area 1 comprises MMI waveguide 11.
摘要翻译：根据本发明的增益钳位半导体光放大器具有与放大引导光的增益区域1夹持的一对DBR区域2,3。增益区域1的波导的一部分包括MMI波导11。

2. 发明申请

US20110149381A1 Gain-clamped semiconductor optical amplifier 失效
标题翻译：增益钳位半导体光放大器
公开(公告)号：US20110149381A1
公开(公告)日：2011-06-23
申请号：US10548880
申请日：2003-12-26
申请人： Hiroshi Hatakeyama
发明人： Hiroshi Hatakeyama
IPC分类号： H01S5/06
CPC分类号： H01S5/5072 , H01S5/026 , H01S5/0655 , H01S5/0683 , H01S5/1078 , H01S5/4025 , H01S5/4068
摘要： A gain-clamped semiconductor optical amplifier according to the present invention has a pair of DBR areas 2, 3 disposed in sandwiching relation to gain area 1 for amplifying guided light. A portion of a waveguide of gain area 1 comprises MMI waveguide 11.
摘要翻译：根据本发明的增益钳位半导体光放大器具有与放大引导光的增益区域1夹持的一对DBR区域2,3。增益区域1的波导的一部分包括MMI波导11。

3. 发明申请

US20100054290A1 SURFACE EMITTING LASER 失效
标题翻译：表面发射激光
公开(公告)号：US20100054290A1
公开(公告)日：2010-03-04
申请号：US12294032
申请日：2007-03-23
申请人： Hiroshi Hatakeyama
发明人： Hiroshi Hatakeyama
IPC分类号： H01S5/187 , H01S5/024 , H01S5/20
CPC分类号： H01S5/1835 , H01S5/0267 , H01S5/0425 , H01S5/06226 , H01S5/18308 , H01S5/18311 , H01S5/18333 , H01S5/18338 , H01S5/2059 , H01S5/423 , H01S2301/166 , H01S2301/176
摘要： VCSELs with a conventional oxide-confined structure have problems to be solved for the purpose of reducing the internal stress and thermal resistance of the device. In particular, the problems should be solved in order to achieve the high reliability of the high-speed modulation-type VCSELs. A surface emitting laser according to an embodiment of the present invention comprising a single current injection opening area, which is provided in a mesa and electrically and optically isolated, wherein the laser comprises: an active layer for emitting light resulted from current injection; a first reflector and a second reflector provided so as to sandwich the active layer between the reflectors, an n electrode and a p electrode for injecting current into the active layer, an ion-implanted nonconductive high-resistance area provided so as to surround the current injection opening area, anda half cross section in which the nonconductive oxidized layer does not appear is present among radial half cross sections extending from a substantial center of the current injection opening area to an outer periphery of the surface emitting laser, which cross sections are interrupted within a region where a laser emitting light is present.
摘要翻译：具有常规氧化物限制结构的VCSEL具有要解决的问题，以减少器件的内部应力和热阻。特别地，为了实现高速调制型VCSEL的高可靠性，应该解决问题。根据本发明实施例的表面发射激光器包括单电流注入开口区域，其设置在台面中并且电和光学隔离，其中激光器包括：用于发射由电流注入产生的光的有源层; 第一反射器和第二反射器，被设置为将有源层夹在反射器之间，用于将电流注入到有源层中的n电极和ap电极，设置成围绕电流注入的离子注入非导电高电阻区域开口面积和半导体氧化层不存在的半截面存在于从电流注入开口区域的大致中心延伸到表面发射激光器的外周的径向半截面中，该截面被中断在存在激光发射光的区域内。

4. 发明授权

US07261350B2 Negative pressure attraction device and attraction confirming sensor 有权
标题翻译：负压吸引装置和吸气确认传感器
公开(公告)号：US07261350B2
公开(公告)日：2007-08-28
申请号：US10517363
申请日：2003-06-04
申请人： Junichi Isetani , Hiroshi Hatakeyama , Hiroyuki Inagaki , Shigeru Aoshima
发明人： Junichi Isetani , Hiroshi Hatakeyama , Hiroyuki Inagaki , Shigeru Aoshima
IPC分类号： B25J15/06 , B25J13/08
CPC分类号： B25J15/0616 , B65G47/917 , G01F1/6842 , G01F1/6845 , H05K13/0409 , Y10S294/907
摘要： An air suction passage (4A, 4B) is provided with a pick and place confirming sensor (1) comprising a gas flow sensor. The pick and place confirming sensor (1) measures the flow rate of air sucked in from an air suction port (33) of a pick and place nozzle (2). The presence or absence of a part lifted to the pick and place nozzle (2) is detected on the basis of the measurement result.
摘要翻译：空气吸入通路（4A，4B）设置有包括气体流量传感器的拾放确认传感器（1）。拾放确认传感器（1）测量从拾取喷嘴（2）的吸气口（33）吸入的空气的流量。基于测量结果检测提升到拾取和放置喷嘴（2）的部件的存在或不存在。

5. 发明申请

US20140023935A1 LITHIUM SECONDARY CELL 审中-公开
标题翻译：锂二次细胞
公开(公告)号：US20140023935A1
公开(公告)日：2014-01-23
申请号：US14009608
申请日：2012-04-13
申请人： Takehiro Noguchi , Hideaki Sasaki , Makiko Uehara , Kazuaki Matsumoto , Hiroshi Hatakeyama
发明人： Takehiro Noguchi , Hideaki Sasaki , Makiko Uehara , Kazuaki Matsumoto , Hiroshi Hatakeyama
IPC分类号： H01M10/0569 , H01M4/1315 , H01M4/133 , H01M10/052
CPC分类号： H01M10/0569 , H01M4/131 , H01M4/1315 , H01M4/133 , H01M4/364 , H01M4/366 , H01M4/485 , H01M4/505 , H01M4/525 , H01M4/587 , H01M10/052 , H01M10/0525 , H01M2300/0037 , H01M2300/004 , H01M2300/0042
摘要： Provided is a lithium secondary cell of 5V class having a positive electrode operating voltage of 4.5V or higher with respect to metallic lithium; the lithium secondary cell has high energy density, inhibits degradation of the electrolytic solution that comes in contact with the positive electrode and the negative electrode, and has particularly long cell life when used under high-temperature environments. The positive electrode contains, as the positive electrode active substance, a predetermined lithium-manganese oxide complex; the negative electrode contains, as the negative electrode active substance, graphite, of which surface is coated by low-crystallinity carbon; and the electrolytic solution contains one or more high-oxidation-potential solvents selected from propylene carbonate, butyl ene carbonate, 4-fluoro-1,3-dioxolan-2-one, and 4,5-difluoro-1,3-dioxolan-2-one within a range of 5 to 60 vol % of the solvent and one or two low-viscosity solvents selected from dimethyl carbonate and fluorinated cyclic ether.
摘要翻译：提供了相对于金属锂具有4.5V或更高的正电极工作电压的5V级的锂二次电池; 锂二次电池具有高能量密度，抑制与正极和负极接触的电解液的劣化，并且在高温环境下使用时具有特别长的电池寿命。正极含有预定的锂锰氧化物络合物作为正极活性物质，作为负极活性物质，负极含有表面被低结晶性碳覆盖的石墨，电解液含有一种或多种选自碳酸亚丙酯，碳酸丁酯，4-氟-1,3-二氧戊环-2-酮和4,5-二氟-1,3-二氧戊环-2-酮的高氧化电位溶剂， 2-酮在溶剂的5至60体积％范围内，以及选自碳酸二甲酯和氟化环醚的一种或两种低粘度溶剂。

6. 发明授权

US07881358B2 Surface emitting laser 失效
标题翻译：表面发射激光
公开(公告)号：US07881358B2
公开(公告)日：2011-02-01
申请号：US12518529
申请日：2007-12-18
申请人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/3095
摘要： A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength λ of the surface emitting laser to satisfy the following relationship: 0.5λ
摘要翻译：表面发射激光器设置有包括第一层的第一多层布拉格反射镜，包括第二层的第二多层布拉格反射镜和保持在这些多层布拉格反射镜之间并包括有源层的光谐振器单元。此外，光谐振器单元分别与第一层和第二层接触。谐振器单元的有效折射率neff大于第一层或第二层，并且光谐振器单元的光学长度neffL与表面发射激光器的振荡波长λ具有关系，以满足以下关系： 0.5λ

7. 发明申请

US20090080488A1 SURFACE EMITTING LASER 审中-公开
标题翻译：表面发射激光
公开(公告)号：US20090080488A1
公开(公告)日：2009-03-26
申请号：US12237048
申请日：2008-09-24
申请人： Hiroshi HATAKEYAMA , Naofumi SUZUKI , Kenichiro YASHIKI , Takeshi AKAGAWA , Takayoshi ANAN , Masayoshi TSUJI , Kimiyoshi FUKATSU
发明人： Hiroshi HATAKEYAMA , Naofumi SUZUKI , Kenichiro YASHIKI , Takeshi AKAGAWA , Takayoshi ANAN , Masayoshi TSUJI , Kimiyoshi FUKATSU
IPC分类号： H01S5/187 , H01S5/18
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/06226 , H01S5/105 , H01S5/18308 , H01S5/18327 , H01S5/18358 , H01S5/3095 , H01S5/34306
摘要： A surface emitting laser including a semiconductor substrate, a semiconductor substrate, a first reflector formed on the semiconductor substrate, an active layer formed on the first reflector, a tunnel junction layer formed above a part of the active layer, a semiconductor spacer layer which covers the tunnel junction layer, a second reflector formed on the semiconductor spacer layer in a region above the tunnel junction layer, a first electrode formed in the periphery of the second reflector on the semiconductor spacer layer, and a second electrode electrically connected to a layer lower than the active layer, wherein a layer thickness of the semiconductor spacer layer in the region directly above the tunnel junction layer is thinner than the layer thickness of the semiconductor spacer layer in the region directly below the first electrode.
摘要翻译：一种表面发射激光器，包括半导体衬底，半导体衬底，形成在半导体衬底上的第一反射器，形成在第一反射器上的有源层，形成在有源层的一部分上方的隧道结层，覆盖所述隧道结层，在所述隧道结层上方的区域中形成在所述半导体间隔层上的第二反射器，形成在所述半导体间隔层上的所述第二反射器的周围的第一电极，以及电连接到所述第二反射层的下层有源层，其中在隧道结层的正上方的区域中的半导体间隔层的层厚度比第一电极正下方的区域中的半导体间隔层的层厚度薄。

8. 发明申请

US20130266847A1 LITHIUM SECONDARY BATTERY 审中-公开
标题翻译：锂二次电池
公开(公告)号：US20130266847A1
公开(公告)日：2013-10-10
申请号：US13992142
申请日：2011-12-07
申请人： Takehiro Noguchi , Hideaki Sasaki , Makiko Uehara , Ippei Waki , Shinako Kaneko , Hiroshi Hatakeyama , Shinsaku Saitho , Yuukou Katou
发明人： Takehiro Noguchi , Hideaki Sasaki , Makiko Uehara , Ippei Waki , Shinako Kaneko , Hiroshi Hatakeyama , Shinsaku Saitho , Yuukou Katou
IPC分类号： H01M10/056
CPC分类号： H01M10/056 , H01M2/0285 , H01M2/0287 , H01M4/131 , H01M4/485 , H01M4/505 , H01M4/525 , H01M4/5825 , H01M4/587 , H01M10/0525 , H01M10/0567 , H01M10/0569 , H01M2300/0034 , H01M2300/0037
摘要： The object of an exemplary embodiment of the invention is to provide a lithium secondary battery which has high energy density by containing a positive electrode active substance operating at a potential of 4.5 V or higher with respect to lithium and which has excellent cycle property. An exemplary embodiment of the invention is an lithium secondary battery, which comprises a positive electrode comprising a positive electrode active substance and an electrolyte liquid comprising a nonaqueous electrolyte solvent; wherein the positive electrode active substance operates at a potential of 4.5 V or higher with respect to lithium; and wherein the nonaqueous electrolyte solvent comprises a fluorine-containing phosphate represented by a prescribed formula.
摘要翻译：本发明的一个示例性实施方案的目的是提供一种通过含有相对于锂在4.5V或更高的电位下操作并且具有优异的循环性能的正极活性物质而具有高能量密度的锂二次电池。本发明的一个示例性实施方案是一种锂二次电池，其包括正极，其包含正极活性物质和包含非水电解质溶剂的电解质液体; 其中所述正极活性物质相对于锂的电位为4.5V以上; 非水电解质溶剂包含由规定式表示的含氟磷酸酯。

9. 发明授权

US08067336B2 Cardboard cylinder for a heat-sensitive transfer image-receiving sheet, rolled heat-sensitive transfer image-receiving sheet to form a roll shape, and image-forming method 失效
标题翻译：用于热敏转印图像接收片的纸板圆筒，滚动的热敏转印图像接收片以形成卷形，以及成像方法
公开(公告)号：US08067336B2
公开(公告)日：2011-11-29
申请号：US12107909
申请日：2008-04-23
申请人： Akito Yokozawa , Hiroshi Hatakeyama
发明人： Akito Yokozawa , Hiroshi Hatakeyama
IPC分类号： B41M5/26
CPC分类号： B41J15/02 , B41J2/325 , Y10S428/913 , Y10S428/914 , Y10T428/1303 , Y10T428/1352 , Y10T428/1393 , Y10T428/31899 , Y10T428/31902
摘要： A cardboard cylinder for winding a heat-sensitive transfer image-receiving sheet having a receptive layer on one surface of a support around the cardboard cylinder, wherein an innermost surface of the cardboard cylinder is composed of a layer containing a polyolefin resin having a number average molecular weight of 12,000 or more in a proportion of at least 80% by mass based on the layer.
摘要翻译：一种纸板圆筒，用于在纸板滚筒周围的支撑体的一个表面上缠绕具有接受层的热敏转印图像接收纸，其中纸板桶的最内表面由含有数均分子量的聚烯烃树脂的层组成相对于该层，分子量为12,000以上，比例为80质量％以上。

10. 发明授权

US07974328B2 Surface-emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US07974328B2
公开(公告)日：2011-07-05
申请号：US12531326
申请日：2008-03-14
申请人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/06226 , H01S5/1039 , H01S5/18308 , H01S5/18369 , H01S5/227 , H01S5/3095
摘要： The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1), (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4. (2)
摘要翻译：本发明提供了一种表面发射型半导体激光器，其中空腔的有效长度减小，从而能够实现更高速度的直接调制。在根据本发明的表面发射型半导体激光器中，当假设谐振器部分相对于激光波长λ0的光程长度（L）为0.9×λ0＆nlE; L＆nlE; 1.1×λ0时，表示通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中光路长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择，以满足以下条件（1）和（2）：nH1> f （nS1）nL12 + g（nS1）nL1 + h（nS1），（1）其中f（nS1）= 0.0266 nS12-0.2407 nS1 + 0.6347; g（nS1）= - 0.0508 nS12 + 0.4335 nS1-0.0085; h（nS1）= 0.0382 nS12-0.3194 nS1 + 0.7398，nH2-nL2> 0.4。（2）

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