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1. 发明授权

US07974328B2 Surface-emission type semiconductor laser 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US07974328B2
公开(公告)日：2011-07-05
申请号：US12531326
申请日：2008-03-14
申请人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/06226 , H01S5/1039 , H01S5/18308 , H01S5/18369 , H01S5/227 , H01S5/3095
摘要： The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1), (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4. (2)
摘要翻译：本发明提供了一种表面发射型半导体激光器，其中空腔的有效长度减小，从而能够实现更高速度的直接调制。在根据本发明的表面发射型半导体激光器中，当假设谐振器部分相对于激光波长λ0的光程长度（L）为0.9×λ0＆nlE; L＆nlE; 1.1×λ0时，表示通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中光路长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择，以满足以下条件（1）和（2）：nH1> f （nS1）nL12 + g（nS1）nL1 + h（nS1），（1）其中f（nS1）= 0.0266 nS12-0.2407 nS1 + 0.6347; g（nS1）= - 0.0508 nS12 + 0.4335 nS1-0.0085; h（nS1）= 0.0382 nS12-0.3194 nS1 + 0.7398，nH2-nL2> 0.4。（2）

2. 发明授权

US07940828B2 Optical communication system and optical transmitter 失效
标题翻译：光通信系统和光发射机
公开(公告)号：US07940828B2
公开(公告)日：2011-05-10
申请号：US12279399
申请日：2006-12-27
申请人： Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki
发明人： Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01L31/0203 , H01L31/0304 , H01S5/0021 , H01S5/02212 , H01S5/18311 , H01S5/34306
摘要： An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of InxGa1-xAs (0.15≦x≦0.35), the first surface-emitting laser having an oscillation wavelength ranging from 1000 nm to 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface-emitting laser. The first optical receiver is connected to the first optical transmitter by a first optical transfer path, and receives the optical signal transmitted from the first optical transmitter through the first optical transfer path.
摘要翻译：用于利用光信号执行数据传输的光通信系统包括第一光发射机和第一光接收机。第一光发射机具有第一表面发射激光器，其包括具有量子阱层In x Ga 1-x As（0.15＆amp; x 1; x＆amp; n; 0.35）的多量子阱结构的有源层，所述第一表面发射激光器具有振荡波长范围从1000nm到1100nm。第一光发射器发射由第一表面发射激光器产生的光信号。第一光接收器通过第一光传输路径连接到第一光发射机，并且通过第一光传输路径接收从第一光发射机发送的光信号。

3. 发明申请

US20090028201A1 OPTICAL COMMUNICATION SYSTEM AND OPTICAL TRANSMITTER 失效
标题翻译：光通信系统和光传输器
公开(公告)号：US20090028201A1
公开(公告)日：2009-01-29
申请号：US12279399
申请日：2006-12-27
申请人： Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki
发明人： Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki
IPC分类号： H01S5/18
CPC分类号： B82Y20/00 , H01L31/0203 , H01L31/0304 , H01S5/0021 , H01S5/02212 , H01S5/18311 , H01S5/34306
摘要： An optical communication system for performing data transmission with optical signals comprises a first optical transmitter and a first optical receiver. The first optical transmitter has a first surface-emitting laser including an active layer of a multiple quantum well structure having a quantum well layer of InxGa1-xAs (0.15≦x≦0.35), the first surface-emitting laser having an oscillation wavelength ranging from 1000 nm to 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface-emitting laser. The first optical receiver is connected to the first optical transmitter by a first optical transfer path, and receives the optical signal transmitted from the first optical transmitter through the first optical transfer path.
摘要翻译：用于利用光信号执行数据传输的光通信系统包括第一光发射机和第一光接收机。第一光发射器具有包括具有In x Ga 1-x As（0.15 <= x <= 0.35）的量子阱层的多量子阱结构的有源层的第一表面发射激光器，第一表面发射激光器具有振荡波长范围从1000 nm到1100 nm。第一光发射器发射由第一表面发射激光器产生的光信号。第一光接收器通过第一光传输路径连接到第一光发射机，并且通过第一光传输路径接收从第一光发射机发送的光信号。

4. 发明申请

US20100034233A1 SURFACE-EMISSION TYPE SEMICONDUCTOR LASER 失效
标题翻译：表面发射型半导体激光器
公开(公告)号：US20100034233A1
公开(公告)日：2010-02-11
申请号：US12531326
申请日：2008-03-14
申请人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Naofumi Suzuki , Masayoshi Tsuji , Takayoshi Anan , Kenichiro Yashiki , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/06226 , H01S5/1039 , H01S5/18308 , H01S5/18369 , H01S5/227 , H01S5/3095
摘要： The present invention provides a surface-emission type semiconductor laser wherein an effective length of a cavity is reduced, thereby enabling to realize a higher-speed direct modulation. In the surface-emission type semiconductor laser according to the present invention, when supposing the optical path length (L) of a resonator part relative to a lasing wavelength λ0 to be given as 0.9×λ0≦L≦1.1×λ0, and denoting the refractive indexes of a high refractive index layer and a low refractive index layer of a dielectric DBR by nH1 and nL1; the average refractive index within an optical path length λ0/4 in the semiconductor in contact with the dielectric DBR by nS1; and the refractive indexes of the high refractive index layer and the low refractive index layer of a semiconductor DBR by nH2 and nL2, respective materials to be used are selected so as to satisfy the following conditions (1) and (2): nH1>f(nS1)nL12+g(nS1)nL1+h(nS1), (1) where f(nS1)=0.0266 nS12−0.2407 nS1+0.6347; g(nS1)=−0.0508 nS12+0.4335 nS1−0.0085; and h(nS1)=0.0382 nS12−0.3194 nS1+0.7398, and nH2−nL2>0.4. (2)
摘要翻译：本发明提供了一种表面发射型半导体激光器，其中空腔的有效长度减小，从而能够实现更高速度的直接调制。在根据本发明的表面发射型半导体激光器中，当假设谐振器部分相对于激发波长λ0的光程长度（L）被给定为0.9×λλ<= L <= 1.1×λ10，并且表示通过nH1和nL1的介电DBR的高折射率层和低折射率层的折射率; 通过nS1与电介质DBR接触的半导体中的光程长度λ0/ 4内的平均折射率; 并且通过nH2和nL2对半导体DBR的高折射率层和低折射率层的折射率进行选择，以满足以下条件（1）和（2）：nH1> f （nS1）nL12 + g（nS1）nL1 + h（nS1），（1）其中f（nS1）= 0.0266 nS12-0.2407 nS1 + 0.6347; g（nS1）= - 0.0508 nS12 + 0.4335 nS1-0.0085; h（nS1）= 0.0382 nS12-0.3194 nS1 + 0.7398，nH2-nL2> 0.4。（2）

5. 发明申请

US20100020835A1 SURFACE EMITTING LASER 失效
标题翻译：表面发射激光
公开(公告)号：US20100020835A1
公开(公告)日：2010-01-28
申请号：US12518529
申请日：2007-12-18
申请人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/183
CPC分类号： H01S5/18308 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/3095
摘要： A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength λ of the surface emitting laser to satisfy the following relationship: 0.5λ
摘要翻译：表面发射激光器设置有包括第一层的第一多层布拉格反射镜，包括第二层的第二多层布拉格反射镜和保持在这些多层布拉格反射镜之间并包括有源层的光谐振器单元。此外，光谐振器单元分别与第一层和第二层接触。谐振器单元的有效折射率neff大于第一层或第二层，并且光谐振器单元的光学长度neffL与表面发射激光器的振荡波长λ具有关系，以满足以下关系： 0.5lambda

6. 发明申请

US20080317476A1 Vehicle-Mounted Optical Communication System and Vehicle-Mounted Optical Transmitter 审中-公开
标题翻译：车载光通信系统和车载光发射机
公开(公告)号：US20080317476A1
公开(公告)日：2008-12-25
申请号：US12279509
申请日：2006-12-28
申请人： Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki
发明人： Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki
IPC分类号： H04B10/00
CPC分类号： B82Y20/00 , H01S5/0021 , H01S5/02212 , H01S5/18311 , H01S5/34306 , H04B10/1125
摘要： A vehicle-mounted optical communication system, which uses an optical signal to perform data transmission, comprises a first optical transmitter and an optical receiver. The first optical transmitter, which is mounted on a vehicle, has a multiple quantum well structure, in which an active layer has a quantum well layer of InxGa1-xAs (where 0.15≦x≦0.35), and includes a first surface emitting laser the oscillation wavelength of which is between 1000 nm and 1100 nm inclusive. The first optical transmitter transmits an optical signal generated by the first surface emitting laser. The optical receiver, which is mounted on the vehicle and connected to the first optical transmitter via a first optical transmission path, receives the optical signal, which was transmitted by the first optical transmitter, via the first optical transmission path.
摘要翻译：使用光信号执行数据传输的车载光通信系统包括第一光发射机和光接收机。安装在车辆上的第一光发射机具有多量子阱结构，其中有源层具有In x Ga 1-x As（其中0.15 <= x <= 0.35）的量子阱层，并且包括第一表面发射其振荡波长在1000nm和1100nm之间的激光器。第一光发射器发射由第一表面发射激光器产生的光信号。安装在车辆上并通过第一光传输路径连接到第一光发射机的光接收器经由第一光传输路径接收由第一光发射机传输的光信号。

7. 发明申请

US20080089376A1 Current Confining Structure and Semiconductor Laser 审中-公开
标题翻译：电流限制结构和半导体激光器
公开(公告)号：US20080089376A1
公开(公告)日：2008-04-17
申请号：US11663320
申请日：2005-09-08
申请人： Takayoshi Anan
发明人： Takayoshi Anan
IPC分类号： H01S5/30 , H01S5/32
CPC分类号： H01S5/18311 , H01S5/18325 , H01S5/18383 , H01S5/2054 , H01S5/3211 , H01S2301/166
摘要： To provide such a technique as to solve problems about a high operating voltage, temperature rise due to heat generation, in-plane non-uniform injection, and a small modulation bandwidth upon high-speed modulation in a surface-emitting laser. A current confining structure according to the present invention includes an n-type semiconductor layer 102, a current confining layer 106, a current-diffusion preventing layer 103, an active layer 104, and a p-type semiconductor layer 105, which are laminated in order on an n-type semiconductor substrate 101. The current confining layer 106 is composed of a current carrying layer 106b and a current blocking layer 106a. The current-diffusion preventing layer 103 includes an n-type or undoped dilute nitrogen-based compound semiconductor layer containing 0.1% or more of nitrogen.
摘要翻译：提供这样的技术来解决在表面发射激光器中高速调制时的高工作电压，由于发热引起的温度升高，面内不均匀注入和小调制带宽的问题。根据本发明的电流限制结构包括层叠在n型半导体层102中的n型半导体层102，电流限制层106，电流扩散防止层103，有源层104和p型半导体层105 在n型半导体衬底101上。电流限制层106由载流层106b和电流阻挡层106a组成。电流扩散防止层103包括含有0.1％以上氮的n型或未掺杂的稀氮类化合物半导体层。

8. 发明授权

US07881358B2 Surface emitting laser 失效
标题翻译：表面发射激光
公开(公告)号：US07881358B2
公开(公告)日：2011-02-01
申请号：US12518529
申请日：2007-12-18
申请人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
发明人： Takayoshi Anan , Naofumi Suzuki , Kenichiro Yashiki , Masayoshi Tsuji , Hiroshi Hatakeyama , Kimiyoshi Fukatsu , Takeshi Akagawa
IPC分类号： H01S5/00
CPC分类号： H01S5/18308 , H01S5/06226 , H01S5/18358 , H01S5/18369 , H01S5/3095
摘要： A surface emitting laser is provided with a first multilayer Bragg reflecting mirror including a first layer, a second multilayer Bragg reflecting mirror including a second layer, and an optical resonator unit that is held between these multilayer Bragg reflecting mirrors and includes an active layer. Further, the optical resonator unit contacts with the first layer and second layer respectively. The effective refraction index neff of the resonator unit is larger than either the first layer or the second layer, and an optical length neffL of the optical resonator unit has a relationship with an oscillating wavelength λ of the surface emitting laser to satisfy the following relationship: 0.5λ
摘要翻译：表面发射激光器设置有包括第一层的第一多层布拉格反射镜，包括第二层的第二多层布拉格反射镜和保持在这些多层布拉格反射镜之间并包括有源层的光谐振器单元。此外，光谐振器单元分别与第一层和第二层接触。谐振器单元的有效折射率neff大于第一层或第二层，并且光谐振器单元的光学长度neffL与表面发射激光器的振荡波长λ具有关系，以满足以下关系： 0.5λ

9. 发明申请

US20090080488A1 SURFACE EMITTING LASER 审中-公开
标题翻译：表面发射激光
公开(公告)号：US20090080488A1
公开(公告)日：2009-03-26
申请号：US12237048
申请日：2008-09-24
申请人： Hiroshi HATAKEYAMA , Naofumi SUZUKI , Kenichiro YASHIKI , Takeshi AKAGAWA , Takayoshi ANAN , Masayoshi TSUJI , Kimiyoshi FUKATSU
发明人： Hiroshi HATAKEYAMA , Naofumi SUZUKI , Kenichiro YASHIKI , Takeshi AKAGAWA , Takayoshi ANAN , Masayoshi TSUJI , Kimiyoshi FUKATSU
IPC分类号： H01S5/187 , H01S5/18
CPC分类号： H01S5/18369 , B82Y20/00 , H01S5/06226 , H01S5/105 , H01S5/18308 , H01S5/18327 , H01S5/18358 , H01S5/3095 , H01S5/34306
摘要： A surface emitting laser including a semiconductor substrate, a semiconductor substrate, a first reflector formed on the semiconductor substrate, an active layer formed on the first reflector, a tunnel junction layer formed above a part of the active layer, a semiconductor spacer layer which covers the tunnel junction layer, a second reflector formed on the semiconductor spacer layer in a region above the tunnel junction layer, a first electrode formed in the periphery of the second reflector on the semiconductor spacer layer, and a second electrode electrically connected to a layer lower than the active layer, wherein a layer thickness of the semiconductor spacer layer in the region directly above the tunnel junction layer is thinner than the layer thickness of the semiconductor spacer layer in the region directly below the first electrode.
摘要翻译：一种表面发射激光器，包括半导体衬底，半导体衬底，形成在半导体衬底上的第一反射器，形成在第一反射器上的有源层，形成在有源层的一部分上方的隧道结层，覆盖所述隧道结层，在所述隧道结层上方的区域中形成在所述半导体间隔层上的第二反射器，形成在所述半导体间隔层上的所述第二反射器的周围的第一电极，以及电连接到所述第二反射层的下层有源层，其中在隧道结层的正上方的区域中的半导体间隔层的层厚度比第一电极正下方的区域中的半导体间隔层的层厚度薄。

10. 发明申请

US20080232418A1 Surface Emitting Laser 审中-公开
标题翻译：表面发射激光
公开(公告)号：US20080232418A1
公开(公告)日：2008-09-25
申请号：US10585633
申请日：2005-01-24
申请人： Takayoshi Anan
发明人： Takayoshi Anan
IPC分类号： H01S5/125
CPC分类号： H01S5/0655 , H01S5/026 , H01S5/0683 , H01S5/1082 , H01S5/18308 , H01S5/18313 , H01S5/18391 , H01S5/2095 , H01S2301/18
摘要： A surface emitting laser includes a substrate, a first Bragg reflector layer formed on the substrate, an active layer formed on the first Bragg reflector layer and having a light-emitting region, a second Bragg reflector layer formed on the active layer to emit light from the surface in the direction of the optical axis (Z), and a light-scattering member for extracting light from the surface of the second Bragg reflector layer in a direction intersecting the optical axis. With this arrangement, the intensity of light emitted from the surface emitting laser in one direction can be monitored by a simple structure.
摘要翻译：表面发射激光器包括衬底，形成在衬底上的第一布拉格反射器层，形成在第一布拉格反射层上并具有发光区域的有源层，形成在有源层上的第二布拉格反射层，以从沿光轴方向的表面（Z），以及用于从与第二布拉格反射层的表面相交的光轴提取光的光散射部件。通过这种布置，可以通过简单的结构来监视从一个方向从表面发射激光器发射的光的强度。

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