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    • 1. 发明授权
    • Substrate heating apparatus and method and coating and developing system
    • 基板加热装置及方法及涂层开发系统
    • US08814563B2
    • 2014-08-26
    • US12818202
    • 2010-06-18
    • Shinichi HayashiHiroaki Inadomi
    • Shinichi HayashiHiroaki Inadomi
    • F27D15/02
    • F27D5/0037F27B5/04F27B17/0025G03F7/162G03F7/3021H01L21/67109
    • Disclosed is a substrate heating apparatus including a hot plate that heats a substrate, and a cooling plate that supports the substrate and moves between a first position (home position) and the second position above the hot plate to transfer wafers between the two positions. A heat-radiating fin structure is connected to the cooling plate to move together with the cooling plate. The fin structure is thermally connected to the cooling plate via heat pipes. A suction port is arranged so as to locate adjacent to the fin structure when the cooling plate is in the home position. The fin structure is cooled by a gas passing therethrough before flown into the suction port, whereby the cooling plate is cooled through heat transfer from the cooling plate to the fin structure through the heat pipes.
    • 公开了一种基板加热装置,其包括加热基板的加热板和支撑基板并在第一位置(原位置)和热板上方的第二位置之间移动以在两个位置之间转移晶片的冷却板。 散热片结构与冷却板连接,与冷却板一起移动。 翅片结构通过热管热连接到冷却板。 当冷却板处于初始位置时,设置一个吸入口以便邻近翅片结构定位。 在流入吸入口之前,翅片结构被通过​​的气体冷却,由冷却板通过热管从冷却板传递到翅片结构而被冷却。
    • 3. 发明申请
    • SUBSTRATE HEATING APPARATUS AND METHOD AND COATING AND DEVELOPING SYSTEM
    • 基板加热装置及方法与涂装与开发系统
    • US20100255204A1
    • 2010-10-07
    • US12818202
    • 2010-06-18
    • Shinichi HAYASHIHiroaki INADOMI
    • Shinichi HAYASHIHiroaki INADOMI
    • B05D3/02
    • F27D5/0037F27B5/04F27B17/0025G03F7/162G03F7/3021H01L21/67109
    • Disclosed is a substrate heating apparatus including a hot plate that heats a substrate, and a cooling plate that supports the substrate and moves between a first position (home position) and the second position above the hot plate to transfer wafers between the two positions. A heat-radiating fin structure is connected to the cooling plate to move together with the cooling plate. The fin structure is thermally connected to the cooling plate via heat pipes. A suction port is arranged so as to locate adjacent to the fin structure when the cooling plate is in the home position. The fin structure is cooled by a gas passing therethrough before flown into the suction port, whereby the cooling plate is cooled through heat transfer from the cooling plate to the fin structure through the heat pipes.
    • 公开了一种基板加热装置,其包括加热基板的加热板和支撑基板并在第一位置(原位置)和热板上方的第二位置之间移动以在两个位置之间转移晶片的冷却板。 散热片结构与冷却板连接,与冷却板一起移动。 翅片结构通过热管热连接到冷却板。 当冷却板处于初始位置时,设置一个吸入口以便邻近翅片结构定位。 在流入吸入口之前,翅片结构被通过​​的气体冷却,由冷却板通过热管从冷却板传递到翅片结构而被冷却。
    • 5. 发明授权
    • Substrate heating apparatus and method and coating and developing system
    • 基板加热装置及方法及涂层开发系统
    • US07780438B2
    • 2010-08-24
    • US11416094
    • 2006-05-03
    • Shinichi HayashiHiroaki Inadomi
    • Shinichi HayashiHiroaki Inadomi
    • F27D15/02
    • F27D5/0037F27B5/04F27B17/0025G03F7/162G03F7/3021H01L21/67109
    • Disclosed is a substrate heating apparatus including a hot plate that heats a substrate, and a cooling plate that supports the substrate and moves between a first position (home position) and the second position above the hot plate to transfer wafers between the two positions. A heat-radiating fin structure is connected to the cooling plate to move together with the cooling plate. The fin structure is thermally connected to the cooling plate via heat pipes. A suction port is arranged so as to locate adjacent to the fin structure when the cooling plate is in the home position. The fin structure is cooled by a gas passing therethrough before flown into the suction port, whereby the cooling plate is cooled through heat transfer from the cooling plate to the fin structure through the heat pipes.
    • 公开了一种基板加热装置,其包括加热基板的加热板和支撑基板并在第一位置(原位置)和热板上方的第二位置之间移动以在两个位置之间转移晶片的冷却板。 散热片结构与冷却板连接,与冷却板一起移动。 翅片结构通过热管热连接到冷却板。 当冷却板处于初始位置时,设置一个吸入口以便邻近翅片结构定位。 在流入吸入口之前,翅片结构被通过​​的气体冷却,由冷却板通过热管从冷却板传递到翅片结构而被冷却。
    • 6. 发明申请
    • HEATING DEVICE AND HEATING METHOD
    • 加热装置和加热方法
    • US20070160947A1
    • 2007-07-12
    • US11617319
    • 2006-12-28
    • Masami AKIMOTOShinichi HayashiNaruaki IldaHiroaki Inadomi
    • Masami AKIMOTOShinichi HayashiNaruaki IldaHiroaki Inadomi
    • F27D15/02
    • F27B17/0025F27B5/04F27D5/0037F27D15/02H01L21/67109H01L21/67748H01L21/67784Y10S414/139
    • A heating device provided with a cooling plate and a heating plate is formed in a low height, and floats a substrate above the cooling plate and the heating plate and moves the substrate horizontally between the cooling plate and the heating plate by the pressure of a gas. A heating device 2 includes a cooling plate 3 provided with flotation gas spouting ports 3a, and a heating plate provided with flotation gas spouting ports. The flotation gas spouting ports 3a and 3b are arranged along a wafer moving passage and are formed so as to spout the gas obliquely upward toward a first end of the wafer moving passage on the side of the cooling plate. A pushing member 51 is brought into contact with a back part of a wafer W with respect to a direction in which the wafer W is moved to move the wafer W in a direction toward the heating plate 6 opposite a direction in which the flotation gas is spouted. The pushing member 51 is brought into contact with a back part of a wafer W with respect to a direction in which the wafer W is moved to move the wafer W in a direction toward the cooling plate 3 in which the flotation gas is spouted.
    • 设置有冷却板和加热板的加热装置形成为低高度,并且浮动冷却板和加热板上方的基板,并且通过气体的压力将基板水平地移动到冷却板和加热板之间 。 加热装置2包括具有浮选气体吐出口3a的冷却板3和设置有浮选气体吐出口的加热板。 浮选气体喷出口3a和3b沿着晶片移动通道布置,并且形成为在冷却板侧朝向晶片移动通道的第一端倾斜向上喷出气体。 推动构件51相对于晶片W移动的方向与晶片W的后部接触,以使晶片W朝向加热板6的方向移动,该方向与浮选气体的方向相反 喷出 推动构件51相对于晶片W移动的方向与晶片W的后部接触,以朝向其中喷出浮选气体的冷却板3的方向移动晶片W.
    • 8. 发明授权
    • Processing apparatus
    • 处理装置
    • US09496158B2
    • 2016-11-15
    • US13447519
    • 2012-04-16
    • Mikio NakashimaHiroaki InadomiSatoshi Okamura
    • Mikio NakashimaHiroaki InadomiSatoshi Okamura
    • H01L21/67
    • H01L21/67126H01L21/6719
    • Provided is a processing apparatus for performing a processing of a substrate to be processed using a high-pressure fluid to prevent the generation of particles and ensure airtightness in the processing container. A sealing member is installed to surround a carrying port of the processing chamber, the carrying port is closed by the cover, and the cover is restricted from retreating by the pressure in the processing chamber by a lock plate, thereby processing the wafer in the processing chamber using the high-pressure fluid. Since the sealing member is pressurized by the internal atmosphere of the processing chamber to be pressed toward the cover during the drying process, a gap between the cover and the processing chamber may be airtightly closed. Since the sealing member does not slide with respect to the processing chamber or the cover, the generation of particles is suppressed.
    • 提供了一种处理装置,用于使用高压流体进行处理的基板的处理,以防止产生颗粒并确保处理容器中的气密性。 安装密封构件以围绕处理室的承载端口,承载口被盖封闭,并且通过锁定板限制盖被处理室中的压力退回,从而在处理中处理晶片 使用高压流体。 由于密封构件在干燥过程中被处理室的内部气氛加压而被压向盖,因此盖和处理室之间的间隙可以是气密的。 由于密封构件相对于处理室或盖不滑动,因此抑制了颗粒的产生。