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    • 1. 发明申请
    • HEATING DEVICE AND HEATING METHOD
    • 加热装置和加热方法
    • US20070160947A1
    • 2007-07-12
    • US11617319
    • 2006-12-28
    • Masami AKIMOTOShinichi HayashiNaruaki IldaHiroaki Inadomi
    • Masami AKIMOTOShinichi HayashiNaruaki IldaHiroaki Inadomi
    • F27D15/02
    • F27B17/0025F27B5/04F27D5/0037F27D15/02H01L21/67109H01L21/67748H01L21/67784Y10S414/139
    • A heating device provided with a cooling plate and a heating plate is formed in a low height, and floats a substrate above the cooling plate and the heating plate and moves the substrate horizontally between the cooling plate and the heating plate by the pressure of a gas. A heating device 2 includes a cooling plate 3 provided with flotation gas spouting ports 3a, and a heating plate provided with flotation gas spouting ports. The flotation gas spouting ports 3a and 3b are arranged along a wafer moving passage and are formed so as to spout the gas obliquely upward toward a first end of the wafer moving passage on the side of the cooling plate. A pushing member 51 is brought into contact with a back part of a wafer W with respect to a direction in which the wafer W is moved to move the wafer W in a direction toward the heating plate 6 opposite a direction in which the flotation gas is spouted. The pushing member 51 is brought into contact with a back part of a wafer W with respect to a direction in which the wafer W is moved to move the wafer W in a direction toward the cooling plate 3 in which the flotation gas is spouted.
    • 设置有冷却板和加热板的加热装置形成为低高度,并且浮动冷却板和加热板上方的基板,并且通过气体的压力将基板水平地移动到冷却板和加热板之间 。 加热装置2包括具有浮选气体吐出口3a的冷却板3和设置有浮选气体吐出口的加热板。 浮选气体喷出口3a和3b沿着晶片移动通道布置,并且形成为在冷却板侧朝向晶片移动通道的第一端倾斜向上喷出气体。 推动构件51相对于晶片W移动的方向与晶片W的后部接触,以使晶片W朝向加热板6的方向移动,该方向与浮选气体的方向相反 喷出 推动构件51相对于晶片W移动的方向与晶片W的后部接触,以朝向其中喷出浮选气体的冷却板3的方向移动晶片W.