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1. 发明授权

US5837405A Reticle 失效
标题翻译：标线
公开(公告)号：US5837405A
公开(公告)日：1998-11-17
申请号：US958869
申请日：1997-10-27
申请人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
发明人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/29 , G03F1/36
摘要： In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要翻译：在掩模版中，代替遮光膜图案的半透明膜图案被用作尺寸在一定范围内的掩模图案，由此可以提高曝光系统的分辨率极限，并且可以实现忠实的图案转印恒定光量。掩模版可以是堆叠层结构，其包括用于向曝光光提供不同光路的移动膜，形成在换挡膜的顶部或底部上的掩模基板，以及透射比调节层，其具有预定的透射率与曝光灯。可以调节移相器的材料的振幅透射比，从而可以使用于有效地改善对比度的移位器宽度变大，并且可以松动换档器宽度所需的准确度。掩模图案可以包括由硅制成的半透明膜图案，硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物，以提供与透明部分不同的光路，到平版印刷光。将硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物以其组成比控制，以在透明基板上形成半透明膜图案。

2. 发明授权

US5589305A Method of fabricating a reticle 失效
标题翻译：制作掩模版的方法
公开(公告)号：US5589305A
公开(公告)日：1996-12-31
申请号：US453465
申请日：1995-05-30
申请人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
发明人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/29 , G03F1/36
摘要： In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要翻译：在掩模版中，代替遮光膜图案的半透明膜图案被用作尺寸在一定范围内的掩模图案，由此可以提高曝光系统的分辨率极限，并且可以实现忠实的图案转印恒定光量。掩模版可以是堆叠层结构，其包括用于向曝光光提供不同光路的移动膜，形成在换挡膜的顶部或底部上的掩模基板，以及透射比调节层，其具有预定的透射率与曝光灯。可以调节移相器的材料的振幅透射比，从而可以使用于有效地改善对比度的移位器宽度变大，并且可以松动换档器宽度所需的准确度。掩模图案可以包括由硅制成的半透明膜图案，硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物，以提供与透明部分不同的光路，到平版印刷光。将硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物以其组成比控制，以在透明基板上形成半透明膜图案。

3. 发明授权

US5660956A Reticle and method of fabricating reticle 失效
标题翻译：刻线及其制作方法
公开(公告)号：US5660956A
公开(公告)日：1997-08-26
申请号：US608946
申请日：1996-02-29
申请人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
发明人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
IPC分类号： G03F1/32 , G03F9/00
CPC分类号： G03F1/32
摘要： In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要翻译：在掩模版中，代替遮光膜图案的半透明膜图案被用作尺寸在一定范围内的掩模图案，由此可以提高曝光系统的分辨率极限，并且可以实现忠实的图案转印恒定光量。掩模版可以是堆叠层结构，其包括用于向曝光光提供不同光路的移动膜，形成在换挡膜的顶部或底部上的掩模基板，以及透射比调节层，其具有预定的透射率与曝光灯。可以调节移相器的材料的振幅透射比，从而可以使用于有效地改善对比度的移位器宽度变大，并且可以松动换档器宽度所需的准确度。掩模图案可以包括由硅制成的半透明膜图案，硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物，以提供与透明部分不同的光路，到平版印刷光。将硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物以其组成比控制，以在透明基板上形成半透明膜图案。

4. 发明授权

US5595844A Method of exposing light in a method of fabricating a reticle 失效
标题翻译：在制作掩模版的方法中曝光光的方法
公开(公告)号：US5595844A
公开(公告)日：1997-01-21
申请号：US453667
申请日：1995-05-30
申请人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
发明人： Yoko Tomofuji , Makoto Nakase , Takashi Sato , Hiroaki Hazama , Haruki Komano , Shinichi Ito
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32 , G03F1/29 , G03F1/36
摘要： In a reticle, a semi-transparent film pattern in place of a light blocking film pattern is used as a mask pattern having a size within a certain range, whereby an exposure system can be improved in resolution limit and faithful pattern transfer can be realized with a constant light quantity. A reticle may be of a stacked layer structure which comprises a shift film for providing a different optical path to exposure light, a mask substrate formed on the top or bottom of the shift film, and a transmissivity ratio adjustment layer having a predetermined transmissivity ratio to the exposure light. The material of a phase shifter may be adjusted in amplitude transmissivity ratio so that a shifter width for effectively improving a contrast can be made large and an accuracy necessary for a shifter width can be loosened. The mask pattern may include a semi-transparent film pattern which is made of silicon, a silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium to provide a different optical path from that of the transparent part with respect to lithographic light. A silicon compound, a mixture containing silicon, germanium, a germanium compound or a mixture containing germanium is controlled in its composition ratio to form a semi-transparent film pattern on a transparent substrate.
摘要翻译：在掩模版中，代替遮光膜图案的半透明膜图案被用作尺寸在一定范围内的掩模图案，由此可以提高曝光系统的分辨率极限，并且可以实现忠实的图案转印恒定光量。掩模版可以是堆叠层结构，其包括用于向曝光光提供不同光路的移动膜，形成在换挡膜的顶部或底部上的掩模基板，以及透射比调节层，其具有预定的透射率与曝光灯。可以调节移相器的材料的振幅透射比，从而可以使用于有效地改善对比度的移位器宽度变大，并且可以松动换档器宽度所需的准确度。掩模图案可以包括由硅制成的半透明膜图案，硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物，以提供与透明部分不同的光路，到平版印刷光。将硅化合物，含有硅，锗，锗化合物或含有锗的混合物的混合物以其组成比控制，以在透明基板上形成半透明膜图案。

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