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1. 发明申请

US20090175630A1 Optical interconnection system for transmitting and receiving a three-level signal and method of operating the same 有权
标题翻译：用于发送和接收三电平信号的光互连系统及其操作方法
公开(公告)号：US20090175630A1
公开(公告)日：2009-07-09
申请号：US12213151
申请日：2008-06-16
申请人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
发明人： Han-youl Ryu , Sung-dong Suh , Kyoung-ho Ha , Seong-gu Kim
IPC分类号： H04B10/00
CPC分类号： H04B10/2504
摘要： Provided is an optical interconnection system that transmits and receives a three-level signal. The optical interconnection system includes a first and a second optical interconnection device that transmits and receives a two-level signal, and a synthesizer that outputs a three-level signal by synthesizing signals from the first and second optical interconnection devices. The optical interconnection system may transmit and receive a three-level signal while using an optical interconnection device that interconnects a two-level signal.
摘要翻译：提供了发送和接收三电平信号的光互连系统。光互连系统包括发送和接收两电平信号的第一和第二光学互连装置，以及通过合成来自第一和第二光学互连装置的信号输出三电平信号的合成器。光互连系统可以在使用互连两级信号的光互连装置的同时发送和接收三电平信号。

2. 发明申请

US20080093593A1 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US20080093593A1
公开(公告)日：2008-04-24
申请号：US11822447
申请日：2007-07-06
申请人： Han-youl Ryu
发明人： Han-youl Ryu
IPC分类号： H01L29/02
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： A semiconductor light emitting device may include an n-type contact layer on a substrate. An active layer may be on the n-type contact layer and/or include two or more quantum well layers and two or more barrier layers. A p-type contact layer may be on the active layer. Energy band gaps of the quantum well layers may be larger as the quantum well layers are closer to the n-type contact layer from the p-type contact layer, thicknesses of the quantum well layers may be smaller as the quantum well layers are closer to the n-type contact layer from the p-type contact layer, and/or energy band gaps of the barrier layers may be larger as the barrier layers are closer to the n-type contact layer from the p-type contact layer.
摘要翻译：半导体发光器件可以在衬底上包括n型接触层。活性层可以在n型接触层上和/或包括两个或更多个量子阱层和两个或更多个势垒层。 p型接触层可以在有源层上。当量子阱层从p型接触层更接近n型接触层时，量子阱层的能带隙可能更大，量子阱层的厚度可以随着量子阱层更接近于随着阻挡层从p型接触层更靠近n型接触层，来自p型接触层的n型接触层和/或阻挡层的能带隙可能更大。

3. 发明授权

US07359598B2 Surface plasmon optic devices and radiating surface plasmon sources for photolithography 有权
标题翻译：表面等离子体光学器件和用于光刻的辐射表面等离子体源
公开(公告)号：US07359598B2
公开(公告)日：2008-04-15
申请号：US10494814
申请日：2001-11-10
申请人： Dai-Sik Kim , Sung-Chul Hohng , Christoph Lienau , Victor Malyarchuck , Jong-Wan Park , Yeo-Chan Yoon , Han-Youl Ryu , Kyeong-Hwa Yoo
发明人： Dai-Sik Kim , Sung-Chul Hohng , Christoph Lienau , Victor Malyarchuck , Jong-Wan Park , Yeo-Chan Yoon , Han-Youl Ryu , Kyeong-Hwa Yoo
IPC分类号： G02B6/26 , G02B6/42
CPC分类号： G03F7/70375 , G02B6/10 , G02F1/01 , G02F2203/10
摘要： Disclosed is a surface plasmon optic device that has a periodic array of apertures in a dielectric substrate and a metal film formed on the dielectric substrate and emits light from metal-air interface. The surface plasmon optic device includes a surface plasmon generating apparatus, a surface plasmon detecting apparatus, a surface plasmon controlling apparatus, an etching apparatus, etc. if a metal diffraction grating is disposed on the metal film having a well-defined interface, propagation of the surface plasmon can be efficiently reflected, divided and controlled. Further, radiating surface plasmon having a half period of a lattice constant formed at air-metal (1, 0) can be preserved at a distance of at least a few micron.
摘要翻译：公开了一种表面等离子体激元光学器件，其在电介质基底中具有周期性的孔阵列，并且在电介质基底上形成金属膜，并从金属 - 空气界面发射光。如果将金属衍射光栅设置在具有界定良好界面的金属膜上，则表面等离子体激元装置包括表面等离子体激元产生装置，表面等离子体激元检测装置，表面等离子体激元控制装置，蚀刻装置等。可以有效地反射，分割和控制表面等离子体激元。此外，具有在空气 - 金属（1,0）处形成的晶格常数的半周期的辐射表面等离子体可以保持在至少几微米的距离处。

4. 发明申请

US20060093000A1 Multiple-wavelength laser diode and method of fabricating the same 审中-公开
标题翻译：多波长激光二极管及其制造方法
公开(公告)号：US20060093000A1
公开(公告)日：2006-05-04
申请号：US11220789
申请日：2005-09-08
申请人： Ok-hyun Nam , Kyoung-ho Ha , Han-youl Ryu
发明人： Ok-hyun Nam , Kyoung-ho Ha , Han-youl Ryu
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/0224 , H01S5/02268 , H01S5/32316 , H01S5/32325 , H01S5/32341 , H01S5/4087
摘要： A multiple-wavelength laser diode (LD) and method of fabricating the same are provided. The multiple-wavelength LD includes at least three LDs, which are bonded onto a plate and aligned such that centers of emission points of the three LDs form a line. Also, the multiple-wavelength LD includes a first LD, an insulating layer disposed on a substrate that extends from the first LD, and at least a second LD and a third LD bonded onto the insulating layer. The first, second, and third LDs are aligned such that centers of emission points are aligned.
摘要翻译：提供了一种多波长激光二极管（LD）及其制造方法。多波长LD包括至少三个LD，其被结合到板上并对齐，使得三个LD的发射点的中心形成一条线。此外，多波长LD包括第一LD，设置在从第一LD延伸的基板上的绝缘层，以及键合到绝缘层上的至少第二LD和第三LD。第一，第二和第三LD对准，使发射点的中心对准。

5. 发明授权

US08120044B2 Multi-chips with an optical interconnection unit 有权
标题翻译：具有光互连单元的多芯片
公开(公告)号：US08120044B2
公开(公告)日：2012-02-21
申请号：US12081277
申请日：2008-04-14
申请人： Soo-haeng Cho , Kyoung-ho Ha , Han-youl Ryu , Sung-dong Suh , Seong-gu Kim , Bok-ki Min
发明人： Soo-haeng Cho , Kyoung-ho Ha , Han-youl Ryu , Sung-dong Suh , Seong-gu Kim , Bok-ki Min
IPC分类号： H01L27/15 , H01L29/16 , H01L31/12 , H01L33/00
CPC分类号： G02B6/43 , H01L2224/05554 , H01L2224/48137 , H01L2224/49175 , H01L2924/00
摘要： A multi-chip having an optical interconnection unit is provided. The multi-chip having an optical interconnection unit includes a plurality of silicon chips sequentially stacked, a plurality of optical device arrays on a side of each of the plurality of the silicon chips such that the optical device arrays correspond to each other and a wiring electrically connecting the silicon chip and the optical device array attached to a side of the silicon chip, wherein the corresponding optical device arrays forms an optical connection unit by transmitting and receiving an optical signal between the corresponding optical device arrays in different layers. Each of the optical device arrays includes at least one of a light emitting device and a light receiving device.
摘要翻译：提供具有光互连单元的多芯片。具有光学互连单元的多芯片包括顺序层叠的多个硅芯片，多个硅芯片中的每一个的一侧的多个光学器件阵列，使得光学器件阵列彼此对应，并且布线电连接连接硅芯片和安装在硅芯片一侧的光学器件阵列，其中相应的光学器件阵列通过在不同层中的相应的光学器件阵列之间发送和接收光学信号来形成光学连接单元。每个光学器件阵列包括发光器件和光接收器件中的至少一个。

6. 发明授权

US07812338B2 Semiconductor light emitting device 失效
标题翻译：半导体发光器件
公开(公告)号：US07812338B2
公开(公告)日：2010-10-12
申请号：US11822447
申请日：2007-07-06
申请人： Han-youl Ryu
发明人： Han-youl Ryu
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/32
摘要： A semiconductor light emitting device may include an n-type contact layer on a substrate. An active layer may be on the n-type contact layer and/or include two or more quantum well layers and two or more barrier layers. A p-type contact layer may be on the active layer. Energy band gaps of the quantum well layers may be larger as the quantum well layers are closer to the n-type contact layer from the p-type contact layer, thicknesses of the quantum well layers may be smaller as the quantum well layers are closer to the n-type contact layer from the p-type contact layer, and/or energy band gaps of the barrier layers may be larger as the barrier layers are closer to the n-type contact layer from the p-type contact layer.
摘要翻译：半导体发光器件可以在衬底上包括n型接触层。活性层可以在n型接触层上和/或包括两个或更多个量子阱层和两个或更多个势垒层。 p型接触层可以在有源层上。当量子阱层从p型接触层更接近n型接触层时，量子阱层的能带隙可能更大，量子阱层的厚度可以随着量子阱层更接近于随着阻挡层从p型接触层更靠近n型接触层，来自p型接触层的n型接触层和/或阻挡层的能带隙可能更大。

7. 发明授权

US07724795B2 Semiconductor optoelectronic device and method of fabricating the same 有权
标题翻译：半导体光电器件及其制造方法
公开(公告)号：US07724795B2
公开(公告)日：2010-05-25
申请号：US11878495
申请日：2007-07-25
申请人： Joong-kon Son , Han-youl Ryu , Tan Sakong , Ho-sun Paek , Sung-nam Lee
发明人： Joong-kon Son , Han-youl Ryu , Tan Sakong , Ho-sun Paek , Sung-nam Lee
IPC分类号： H01S5/00
CPC分类号： H01L33/02 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/0014 , H01S5/2004 , H01S5/2009 , H01S5/321 , H01S5/3213 , H01S5/3403 , H01S5/3406 , H01S5/34333
摘要： Provided is a semiconductor opto-electronic device that may comprise an active layer including a quantum well and a barrier layer on a substrate, upper and lower waveguide layers on and underneath the active layer, respectively, and upper and lower clad layers on and underneath the upper and lower waveguide layers, respectively. The semiconductor opto-electronic device may further comprise an upper optical confinement layer (OCL) between the active layer and the upper waveguide layer and having an energy gap smaller than the energy gap of the upper waveguide layer and equal to or larger than the energy gap of the barrier layer, and a lower OCL between the active layer and the lower waveguide layer and having an energy gap smaller than the energy gap of the lower waveguide layer and equal to or smaller than the energy gap of the barrier layer. Also provided is a method of fabricating the semiconductor opto-electronic device.
摘要翻译：提供了一种半导体光电器件，其可以包括分别包括量子阱和在衬底上的势垒层，有源层上和下面的上波导层和下层波导层的有源层，以及位于有源层之上和之下的上和下包层上下波导层。半导体光电器件还可以包括在有源层和上波导层之间的上部光限制层（OCL），并且具有小于上波导层的能隙的能隙，并且等于或大于能隙以及有源层和下波导层之间的下部OCL，并且具有小于下部波导层的能隙的能隙，并且等于或小于势垒层的能隙。还提供了一种制造半导体光电器件的方法。

8. 发明授权

US07693200B2 Semiconductor laser diode having ridge 有权
标题翻译：具有脊的半导体激光二极管
公开(公告)号：US07693200B2
公开(公告)日：2010-04-06
申请号：US11657672
申请日：2007-01-25
申请人： Jung-hye Chae , Jong-in Shim , Kyoung-ho Ha , Kyu-sang Kim , Han-youl Ryu
发明人： Jung-hye Chae , Jong-in Shim , Kyoung-ho Ha , Kyu-sang Kim , Han-youl Ryu
IPC分类号： H01S5/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0425 , H01S5/34333
摘要： A semiconductor laser diode including a substrate, and a first semiconductor layer, an active layer, a second semiconductor layer and an electrode sequentially formed on the substrate is provided. In the semiconductor laser diode, the second semiconductor layer has a ridge and the electrode is formed on the ridge of the second semiconductor layer at a width which is less than the width of the ridge.
摘要翻译：提供一种半导体激光二极管，其包括基板，以及顺序地形成在基板上的第一半导体层，有源层，第二半导体层和电极。在半导体激光二极管中，第二半导体层具有脊，电极形成在第二半导体层的脊上，宽度小于脊的宽度。

9. 发明申请

US20080123696A1 Semiconductor laser device having scattering portion and method of fabricating the device 审中-公开
标题翻译：具有散射部的半导体激光装置及其制造方法
公开(公告)号：US20080123696A1
公开(公告)日：2008-05-29
申请号：US11898577
申请日：2007-09-13
申请人： Han-youl Ryu , Join-in Shim , Youn-joon Sung
发明人： Han-youl Ryu , Join-in Shim , Youn-joon Sung
IPC分类号： H01S3/10 , H01L21/00
CPC分类号： H01S5/22 , H01S5/0207 , H01S5/2004 , H01S5/3211 , H01S5/32341 , H01S2301/18
摘要： Provided is a semiconductor laser device comprising a substrate, a light emitting structure including a first clad layer, an active layer, and a second clad layer sequentially stacked on the substrate, and a scattering portion formed on the bottom surface of the substrate in order to scatter light. As such, the semiconductor laser device may emit higher quality laser light.
摘要翻译：本发明提供一种半导体激光装置，其包括基板，发光结构，其包括依次层叠在基板上的第一包层，有源层和第二包层，以及形成在基板的底面上的散射部，以便散光因此，半导体激光装置可以发射更高质量的激光。

10. 发明申请

US20080101422A1 Semiconductor laser device including a light shield plate, semiconductor laser device package, and methods of manufacturing the same 失效
标题翻译：包括遮光板，半导体激光器件封装的半导体激光器件及其制造方法
公开(公告)号：US20080101422A1
公开(公告)日：2008-05-01
申请号：US11907879
申请日：2007-10-18
申请人： Han-youl Ryu , Hyung-kun Kim
发明人： Han-youl Ryu , Hyung-kun Kim
IPC分类号： H01S3/10 , H01L21/00
CPC分类号： H01S5/02212 , H01S5/005 , H01S5/021 , H01S5/0213 , H01S5/2027 , H01S5/22 , H01S5/32341
摘要： Provided is a semiconductor laser device, a semiconductor laser device package including the semiconductor laser device and methods of manufacturing the same. A semiconductor laser device may include a light emission structure including a first clad layer, an active layer and a second clad layer sequentially deposited on a substrate, a submount to which the light emission structure bonded, and a light shield plate in the submount, wherein the light shield plate blocks an end of the substrate on a light emission face of the light emission structure and blocks light leaked through the end of the substrate.
摘要翻译：提供一种半导体激光器件，包括半导体激光器件的半导体激光器器件封装及其制造方法。半导体激光器件可以包括发光结构，其包括顺序地沉积在衬底上的第一覆盖层，有源层和第二覆盖层，接合发光结构的基座以及基座中的遮光板，其中遮光板在发光结构的发光面上阻挡基板的一端，并且阻挡通过基板的端部泄漏的光。

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