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1. 发明申请

US20060043332A1 Etchant composition for indium oxide layer and etching method using the same 有权
标题翻译：用于氧化铟层的蚀刻剂组合物和使用其的蚀刻方法
公开(公告)号：US20060043332A1
公开(公告)日：2006-03-02
申请号：US11208545
申请日：2005-08-23
申请人： Hong-Je Cho , Seung-Yong Lee , Joon-Woo Lee , Jae-Yeon Lee , Seung-Hwan Chon , Yong-Suk Choi , Young-Chul Park , Jin-Su Kim , Kyu-Sang Kim , Dong-Uk Choi , Kwan-Tack Lim
发明人： Hong-Je Cho , Seung-Yong Lee , Joon-Woo Lee , Jae-Yeon Lee , Seung-Hwan Chon , Yong-Suk Choi , Young-Chul Park , Jin-Su Kim , Kyu-Sang Kim , Dong-Uk Choi , Kwan-Tack Lim
IPC分类号： C09K13/06
CPC分类号： C09K13/06
摘要： An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO5), potassium bisulfate (KHSO4), and potassium sulfate (K2SO4) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.
摘要翻译：用于除去氧化铟层的蚀刻剂包括硫酸作为主要氧化剂，辅助氧化剂如H 3 PO 4，HNO 3， CH 3 COOH，HClO 4，H 2 O 2，以及通过将钾过硫酸氢盐（2KHSO 5），硫酸氢钾（KHSO 4）和硫酸钾（K 2 SO 4）一起以5：3：2的比例，包含铵基材料的蚀刻抑制剂和水。蚀刻剂可以去除铟氧化物层的期望部分，而不损害光致抗蚀剂图案或氧化铟层下面的层。

2. 发明授权

US11718507B2 Pile lifting device capable of preventing overturning 有权
公开(公告)号：US11718507B2
公开(公告)日：2023-08-08
申请号：US17753151
申请日：2020-08-25
申请人： Kyu Sang Kim
发明人： Kyu Sang Kim
IPC分类号： B66C1/66 , E02D13/04 , E02D11/00
CPC分类号： B66C1/66 , E02D11/00 , E02D13/04
摘要： A pile lifting chuck including a chuck housing which is inserted into an inner diameter of a pile and has extension-installing pockets vertically formed at predetermined intervals to face each other in a radial direction. The pile lifting chuck further includes a pair of extensions which are disposed in the pockets and installed to be movable in the radial direction and a chucking cylinder which has one end connected to any one of the extensions and the other end connected to the other one of the extensions and which is configured to, by using a reaction force on the any one of the extensions, move the other one of the extensions to chuck the pile.

3. 发明授权

US07773649B2 Semiconductor laser diode having wafer-bonded structure and method of fabricating the same 失效
标题翻译：具有晶片结合结构的半导体激光二极管及其制造方法
公开(公告)号：US07773649B2
公开(公告)日：2010-08-10
申请号：US11878347
申请日：2007-07-24
申请人： Kyu-sang Kim , Kyoung-ho Ha
发明人： Kyu-sang Kim , Kyoung-ho Ha
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0215 , H01S5/0217 , H01S5/22 , H01S5/3063 , H01S2301/173 , H01S2304/12
摘要： Example embodiments are directed to a semiconductor laser diode and a method of fabricating the same. The semiconductor laser diode may include a first semiconductor layer formed over a first substrate and capable of emitting light, and a second semiconductor layer capable of guiding the emitted light, wherein the first and second semiconductor layers are bonded to each other. The method of fabricating the semiconductor laser diode may include forming over a first substrate a first semiconductor layer capable of emitting light, forming over a second substrate a second semiconductor layer capable of guiding the light, bonding the first semiconductor layer to the second semiconductor layer, and removing the second substrate. The second semiconductor layer may be grown separately under conditions different from those for forming the first semiconductor layer, and may be subsequently bonded to the first semiconductor layer.
摘要翻译：示例性实施例涉及半导体激光二极管及其制造方法。半导体激光二极管可以包括形成在第一基板上并且能够发光的第一半导体层，以及能够引导发射的光的第二半导体层，其中第一和第二半导体层彼此接合。制造半导体激光二极管的方法可以包括在第一衬底上形成能够发光的第一半导体层，在第二衬底上形成能够引导光的第二半导体层，将第一半导体层接合到第二半导体层，并移除第二基板。第二半导体层可以在与用于形成第一半导体层的条件不同的条件下单独生长，并且可以随后结合到第一半导体层。

4. 发明申请

US20220274807A1 PILE LIFTING DEVICE CAPABLE OF PREVENTING OVERTURNING 有权
公开(公告)号：US20220274807A1
公开(公告)日：2022-09-01
申请号：US17753151
申请日：2020-08-25
申请人： Kyu Sang KIM
发明人： Kyu Sang KIM
IPC分类号： B66C1/66 , E02D13/04 , E02D11/00
摘要： The present disclosure provides a pile lifting device capable of preventing the overturning of piles that can lift piles by chucking the piles using hydraulic pressure and prevent the overturning of the piles even when chucking is released during lifting, thus preventing accidents. According to an embodiment of the present disclosure, the pile lifting device capable of preventing the overturning of piles, which is connected to lifting equipment and used to lift piles, includes a balance plate which is connected to the lifting equipment to maintain a horizontal balance and a pile lifting chuck which is connected to the balance plate directly or via a plurality of first lifting cable and inserted into an upper inner diameter portion of the pile to hold the pile using a hydraulic force.

5. 发明申请

US20210010219A1 HYDRAULIC JACK EXPANSION-TYPE ROTARY PENETRATION DEVICE FOR CIRCULAR PIPE 有权
公开(公告)号：US20210010219A1
公开(公告)日：2021-01-14
申请号：US16500050
申请日：2018-04-05
申请人： Kyu Sang KIM
发明人： Kyu Sang KIM
IPC分类号： E02D7/22 , E02D5/58
摘要： A hydraulic jack expansion-type rotary penetration device for a circular pipe comprises: a rotating head which receives torque from the outside; one or more hollow shafts arranged in series downward along the central axis of the rotating head; shaft-connection socket which interconnect the first hollow shaft which is connected to the rotating head with the remaining adjacent hollow shafts, to thereby transmit the torque of the rotating head; and one or more clamp modules which are installed in the hollow shafts and pressed against the inner surface of the circular pipe by hydraulic pressure generated in the rotating head to thereby generate clamping force.

6. 发明授权

US08367443B2 Method of manufacturing semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US08367443B2
公开(公告)日：2013-02-05
申请号：US13137374
申请日：2011-08-10
申请人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
发明人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L33/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/32341
摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.
摘要翻译：提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

7. 发明申请

US20120104439A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20120104439A1
公开(公告)日：2012-05-03
申请号：US13173392
申请日：2011-06-30
申请人： Kyu Sang KIM
发明人： Kyu Sang KIM
IPC分类号： H01L33/50
CPC分类号： H01L33/501 , H01L33/08 , H01L33/20 , H01L33/505 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2933/0091 , H01L2924/00014
摘要： A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles, and having a void therein. A semiconductor light emitting device includes: a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a wavelength conversion layer formed on at least a portion of a light emission surface of the light emission structure, made of a light-transmissive material including phosphor particles or quantum dots, and having a void therein.
摘要翻译：半导体发光器件包括：发光结构，包括第一导电半导体层，有源层和第二导电半导体层; 以及波长转换层，形成在由包含荧光体颗粒的透光材料制成并且在其中具有空隙的发光结构的发光表面的至少一部分上。半导体发光器件包括：发光结构，包括第一导电半导体层，有源层和第二导电半导体层; 以及波长转换层，其形成在由包含荧光体颗粒或量子点的透光材料制成并且在其中具有空隙的发光结构的发光表面的至少一部分上。

8. 发明申请

US20080102549A1 Method of manufacturing semiconductor light emitting device 失效
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20080102549A1
公开(公告)日：2008-05-01
申请号：US11889126
申请日：2007-08-09
申请人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
发明人： Youn-joon Sung , Su-hee Chae , Tae-hoon Jang , Kyu-sang Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/0095 , H01L33/22 , H01S5/0202 , H01S5/0425 , H01S5/22 , H01S5/32341
摘要： Provided is a method of manufacturing semiconductor light emitting devices including: forming light emitting structures by sequentially depositing a first material layer, an active layer and a second material layer; forming the roughness pattern on a region of the bottom of a substrate except at least a cleaving region for forming cleaving planes; and forming n-electrodes.
摘要翻译：提供一种制造半导体发光器件的方法，包括：通过顺序地沉积第一材料层，有源层和第二材料层来形成发光结构; 在至少一个用于形成裂开面的切割区域的基板的底部的区域上形成粗糙图案; 并形成n电极。

9. 发明授权

US07329365B2 Etchant composition for indium oxide layer and etching method using the same 有权
标题翻译：用于氧化铟层的蚀刻剂组合物和使用其的蚀刻方法
公开(公告)号：US07329365B2
公开(公告)日：2008-02-12
申请号：US11208545
申请日：2005-08-23
申请人： Hong-Je Cho , Seung-Yong Lee , Joon-Woo Lee , Jae-Yeon Lee , Seung-Hwan Chon , Yong-Suk Choi , Young-Chul Park , Jin-Su Kim , Kyu-Sang Kim , Dong-Uk Choi , Kwan-Tack Lim
发明人： Hong-Je Cho , Seung-Yong Lee , Joon-Woo Lee , Jae-Yeon Lee , Seung-Hwan Chon , Yong-Suk Choi , Young-Chul Park , Jin-Su Kim , Kyu-Sang Kim , Dong-Uk Choi , Kwan-Tack Lim
IPC分类号： B44C1/22
CPC分类号： C09K13/06
摘要： An etchant for removing an indium oxide layer includes sulfuric acid as a main oxidizer, an auxiliary oxidizer such as H3PO4, HNO3, CH3COOH, HClO4, H2O2, and a Compound A that is obtained by mixing potassium peroxymonosulfate (2KHSO5), potassium bisulfate (KHSO4), and potassium sulfate (K2SO4) together in the ratio of 5:3:2, an etching inhibitor comprising an ammonium-based material, and water. The etchant may remove desired portions of the indium oxide layer without damage to a photoresist pattern or layers underlying the indium oxide layer.
摘要翻译：用于除去氧化铟层的蚀刻剂包括硫酸作为主要氧化剂，辅助氧化剂如H 3 PO 4，HNO 3， CH 3 COOH，HClO 4，H 2 O 2，以及通过将钾过硫酸氢盐（2KHSO 5），硫酸氢钾（KHSO 4）和硫酸钾（K 2 SO 4）一起以5：3：2的比例，包含铵基材料的蚀刻抑制剂和水。蚀刻剂可以去除铟氧化物层的期望部分，而不损害光致抗蚀剂图案或氧化铟层下面的层。

10. 发明申请

US20060183338A1 Etchant composition and manufacturing method for thin film transistor array panel 有权
标题翻译：用于薄膜晶体管阵列面板的蚀刻剂组成和制造方法
公开(公告)号：US20060183338A1
公开(公告)日：2006-08-17
申请号：US11271079
申请日：2005-11-10
申请人： Kyu-Sang Kim , Kwan-Tack Lim
发明人： Kyu-Sang Kim , Kwan-Tack Lim
IPC分类号： H01L21/84 , H01L21/302 , H01L21/00 , H01L21/461
CPC分类号： H01L21/76838 , C23F1/20 , C23F1/26 , H01L21/32134 , H01L21/76841 , H01L23/53223 , H01L27/12 , H01L27/124 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides an etchant composition containing 60 to 75 wt % of phosphoric acid (H3PO4), 0.5 to 15 wt % of nitric acid (HNO3), 2 to 15 wt % of acetic acid (CH3COOH), and 0.1 to 15 wt % of aluminum nitrate (Al(NO3)3).
摘要翻译：本发明提供一种含有60〜75重量％的磷酸（H 3 PO 4）的蚀刻剂组合物，0.5〜15重量％的硝酸（HNO 3） 3重量％，2至15重量％的乙酸（CH 3 COOH）和0.1至15重量％的硝酸铝（Al（NO 3 3） 3 ）。

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