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1. 发明授权

US07811464B2 Preferential etching method and silicon single crystal substrate 有权
标题翻译：优选蚀刻方法和硅单晶衬底
公开(公告)号：US07811464B2
公开(公告)日：2010-10-12
申请号：US11795876
申请日：2006-01-23
申请人： Fumitaka Kume
发明人： Fumitaka Kume
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： H01L22/26 , C30B29/06 , C30B33/10
摘要： There is provided a preferential etching method wherein a preferential etchant which contains at least a hydrofluoric acid whose composition by volume falls within the range of 0.02 to 0.1, a nitric acid whose composition by volume falls within the range of 0.5 to 0.6, an acetic acid whose composition by volume falls within the range of 0.2 to 0.25, and water is used to etch a silicon single crystal substrate whose electrical resistivity is less than 10 mΩ·cm at a rate higher than 0.1 μm/min, thereby eliciting BMDs on a surface of the silicon single crystal substrate. As a result, the preferential etching method that can evaluate and utilize characteristics of crystal defects, especially BMDs in an ultralow-resistance silicon single crystal substrate whose electrical resistivity is less than 10 mΩ·cm, which cannot be readily detected by conventional techniques, by performing preferential etching using a chromeless etchant containing no harmful chrome can be provided.
摘要翻译：提供了一种优选的蚀刻方法，其中优选的蚀刻剂至少包含体积在0.02至0.1范围内的氢氟酸，其体积含量在0.5至0.6的范围内的硝酸，乙酸其体积的组成在0.2至0.25的范围内，并且使用水以高于0.1μm/ min的速率蚀刻其电阻率小于10μm和OHgr·cm的硅单晶衬底，从而在硅单晶衬底的表面。结果，可以评估和利用电阻率小于10mΩ的超低电阻硅单晶衬底中的晶体缺陷特别是BMD的特性的优选蚀刻方法，其通过常规技术不能容易地检测，可以提供使用不含有害铬的无色蚀刻剂进行优先蚀刻。

2. 发明授权

US08793853B2 Core wire holder for producing polycrystalline silicon and method for producing polycrystalline silicon 有权
标题翻译：用于生产多晶硅的芯线架和多晶硅生产方法
公开(公告)号：US08793853B2
公开(公告)日：2014-08-05
申请号：US13502015
申请日：2010-07-27
申请人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume
发明人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume
IPC分类号： B25B1/00
CPC分类号： C01B33/035 , Y10T29/53796 , Y10T29/53961
摘要： One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
摘要翻译：芯线保持架20的一端形成为截头圆锥形，具有倾斜面。在端部设有开口部22，形成中空部21，插入中空部21并保持在其中的硅芯线5。在硅芯线5的表面上，通过西门子方法气相沉积多晶硅6以制造多晶硅棒。在开口部22附近的截锥体的倾斜面上，作为绝热层，从开口部的朝向中空部21的外周面形成环状狭缝23a〜23c。环状狭缝用作绝热部分，并且抑制热量逸出以加热芯线保持器20的一端侧。

3. 发明申请

US20140134851A1 OZONE GAS GENERATION PROCESSING APPARATUS, METHOD OF FORMING SILICON OXIDE FILM, AND METHOD FOR EVALUATING SILICON SINGLE CRYSTAL WAFER 有权
标题翻译：臭氧发生加工装置，形成硅氧烷膜的方法和评价硅单晶的方法
公开(公告)号：US20140134851A1
公开(公告)日：2014-05-15
申请号：US14234435
申请日：2012-07-25
申请人： Fumitaka Kume
发明人： Fumitaka Kume
IPC分类号： H01L21/02 , C23C16/448
CPC分类号： H01L21/02238 , C23C16/448 , C30B29/06 , C30B33/005 , H01L21/02164 , H01L22/14
摘要： An ozone gas generation processing apparatus that includes a light source of ultraviolet rays and a wafer placement section, generates ozone gas by irradiating ultraviolet rays from the light source in an atmosphere containing oxygen, and processes a wafer on the wafer placement section with the ozone gas, the ozone gas generation processing apparatus comprising a light-blocking plate that allows the generated ozone gas to pass therethrough and blocks the ultraviolet rays between the light source and the wafer placed on the wafer placement section. An ozone gas generation processing apparatus and a method of forming an oxide film silicon film can make an adjustment to make thinner an oxide film formed on a wafer surface, the wafer surface is not damaged by ultraviolet rays when processed, and a method for evaluating a silicon single crystal wafer, obtaining a more stable measurement value of C-V characteristics are provided.
摘要翻译：包括紫外线光源和晶片放置部分的臭氧气体生成处理装置通过在含氧气氛中照射来自光源的紫外线而产生臭氧气体，并且利用臭氧气体处理晶片放置部分上的晶片臭氧气体发生处理装置包括允许产生的臭氧气体通过的遮光板，并且阻挡光源与放置在晶片放置部分上的晶片之间的紫外线。臭氧气体生成处理装置和氧化膜硅膜的形成方法可以进行调整，以使形成在晶片表面上的氧化膜更薄，当处理时晶片表面不被紫外线损坏，以及评估方法硅单晶晶片，获得更稳定的CV特性测量值。

4. 发明申请

US20130102092A1 POLYCRYSTALLINE SILICON ROD AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON ROD 有权
标题翻译：多晶硅棒及其制造方法多晶硅
公开(公告)号：US20130102092A1
公开(公告)日：2013-04-25
申请号：US13808404
申请日：2011-07-04
申请人： Shigeyoshi Netsu , Fumitaka Kume , Junichi Okada
发明人： Shigeyoshi Netsu , Fumitaka Kume , Junichi Okada
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , C01B33/035 , G01M7/08 , G01N29/045 , G01N29/12 , G01N29/4418 , G01N29/4454 , G01N29/46 , G01N2291/0234 , G01N2291/2626 , G01N2291/2697 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要： The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).
摘要翻译：用卷尺测量多晶硅棒（100）的长度，然后用锤子（120）击打多晶硅棒（100），并将该锤击声通过麦克风（140）记录在记录器（140）中 130）。然后，对锤击声的声信号进行快速傅里叶变换，并显示频率分布。此外，检测出在快速傅里叶变换之后获得的频率分布中的最大音量的峰值频率f。获得多晶硅棒的长度（L）与峰值频率f之间的关系，并且基于峰值频率f是否在f> =的范围内来确定多晶硅棒的坚固度， 1,471 / L（A区）。

5. 发明申请

US20120237429A1 REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON 有权
标题翻译：用于制造多晶硅的反应器，用于生产多晶硅的系统和用于生产多晶硅的方法
公开(公告)号：US20120237429A1
公开(公告)日：2012-09-20
申请号：US13496002
申请日：2010-07-09
申请人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
发明人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
IPC分类号： B01J19/00 , C01B33/027
CPC分类号： C01B33/035 , C22C1/02 , Y02P20/124
摘要： An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
摘要翻译：反应器10的内壁11具有两层结构：在与腐蚀性工艺气体接触的反应器的内侧设置有包括具有高防锈性的合金材料的防腐蚀层11a和用于有效导电的导热层11b 在反应器10的外侧（外壁侧）设置有从内壁面到冷却剂流路13的反应器10内的热量。防腐层11a包括具有由R = [Cr] + [Ni] -1.5 [Si]定义的值R为40％以上的组成的合金材料，其中[Cr]为质量含量（％（Cr），[Ni]为镍（Ni）的质量含量（质量％），[Si]为硅（Si）的质量含量（质量％）。

6. 发明申请

US20080038526A1 Silicon Epitaxial Wafer And Manufacturing Method Thereof 审中-公开
标题翻译：硅外延晶圆及其制造方法
公开(公告)号：US20080038526A1
公开(公告)日：2008-02-14
申请号：US11632719
申请日：2005-07-05
申请人： Fumitaka Kume , Tomosuke Yushida , Ken Aihara , Ryoji Hoshi , Satoshi Tobe , Naohisa Toda , Fumio Tahara
发明人： Fumitaka Kume , Tomosuke Yushida , Ken Aihara , Ryoji Hoshi , Satoshi Tobe , Naohisa Toda , Fumio Tahara
IPC分类号： B32B7/02 , C30B15/00
CPC分类号： H01L21/3225 , C30B25/20 , C30B29/06 , C30B33/02 , Y10T428/24992
摘要： A silicon epitaxial wafer 100 formed by growing a silicon epitaxial layer 2 on a silicon single crystal substrate 1, produced by a CZ method, and doped with boron so that a resistivity thereof is in the range of 0.009 Ω·cm or higher and 0.012 Ω·cm or lower. The silicon single crystal substrate 1 has a density of the oxygen precipitation nuclei of 1×1010 cm−3 or higher. A width of a no-oxygen-precipitation-nucleus-forming-region 15, formed between the silicon epitaxial layer 2 and the silicon single substrate 1, is in the range of more than 0 μm and less than 10 μm. Thereby, provided is a silicon epitaxial wafer using a boron doped p+ CZ substrate, wherein a formed width of no-oxygen-precipitation-nucleus-forming-region is reduced sufficiently, and oxygen precipitates can be formed having a density sufficient enough to exert an IG effect.
摘要翻译：通过在硅单晶衬底1上生长硅外延层2而形成的硅外延晶片100，其通过CZ方法制造并掺杂硼，使其电阻率在0.009Ω.cm以上且0.012Ω .cm或更低。硅单晶衬底1的氧沉淀核的密度为1×10 10 -3 -3以上。在硅外延层2和硅单基板1之间形成的无氧析出核形成区域15的宽度在大于0μm且小于10μm的范围内。由此，提供了使用硼掺杂的P + CZ衬底的硅外延晶片，其中形成的无氧沉淀 - 核形成区域的宽度被充分降低，并且可以形成氧沉淀具有足以施加IG效应的密度。

7. 发明授权

US09562289B2 Carbon electrode with slidable contact surfaces and apparatus for manufacturing polycrystalline silicon rod 有权
标题翻译：具有可滑动接触表面的碳电极和用于制造多晶硅棒的设备
公开(公告)号：US09562289B2
公开(公告)日：2017-02-07
申请号：US13508826
申请日：2010-10-22
申请人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume , Masaru Hirahara
发明人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume , Masaru Hirahara
IPC分类号： C30B28/12 , C23C16/458 , C01B33/035 , C23C16/24 , C01B31/04
CPC分类号： C23C16/458 , C01B32/225 , C01B33/035 , C23C16/24
摘要： The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.
摘要翻译：上电极31具有从上表面33延伸到下表面34的孔35，将螺栓36从上电极31的上表面33插入孔35中，并通过螺钉固定在下电极32中。孔35的内部和螺栓36的直体部之间的间隙51允许上电极31在放置表面（在下电极32的下表面34的上表面）的所有方向上滑动作为与下部电极32的上表面的接触面的图2中的上部电极31），由此提供防止U棒的发生龟裂或断裂的效果，U棒能够在各个方向上膨胀和收缩气相生长过程。

8. 发明授权

US09287111B2 Ozone gas generation processing apparatus, method of forming silicon oxide film, and method for evaluating silicon single crystal wafer 有权
标题翻译：臭氧气体生成处理装置，氧化硅膜的形成方法以及硅单晶晶片的评价方法
公开(公告)号：US09287111B2
公开(公告)日：2016-03-15
申请号：US14234435
申请日：2012-07-25
申请人： Fumitaka Kume
发明人： Fumitaka Kume
IPC分类号： H01L21/31 , H01L21/469 , H01L21/02 , H01L21/66 , C30B29/06 , C23C16/448 , C30B33/00
CPC分类号： H01L21/02238 , C23C16/448 , C30B29/06 , C30B33/005 , H01L21/02164 , H01L22/14
摘要： An ozone gas generation processing apparatus that includes a light source of ultraviolet rays and a wafer placement section, generates ozone gas by irradiating ultraviolet rays from the light source in an atmosphere containing oxygen, and processes a wafer on the wafer placement section with the ozone gas, the ozone gas generation processing apparatus comprising a light-blocking plate that allows the generated ozone gas to pass therethrough and blocks the ultraviolet rays between the light source and the wafer placed on the wafer placement section. An ozone gas generation processing apparatus and a method of forming an oxide film silicon film can make an adjustment to make thinner an oxide film formed on a wafer surface, the wafer surface is not damaged by ultraviolet rays when processed, and a method for evaluating a silicon single crystal wafer, obtaining a more stable measurement value of C-V characteristics are provided.
摘要翻译：包括紫外线光源和晶片放置部分的臭氧气体生成处理装置通过在含氧气氛中照射来自光源的紫外线而产生臭氧气体，并且利用臭氧气体处理晶片放置部分上的晶片臭氧气体发生处理装置包括允许产生的臭氧气体通过的遮光板，并且阻挡光源与放置在晶片放置部分上的晶片之间的紫外线。臭氧气体生成处理装置和氧化膜硅膜的形成方法可以进行调整，以使形成在晶片表面上的氧化膜更薄，当处理时晶片表面不被紫外线损坏，以及评估方法硅单晶晶片，获得更稳定的CV特性测量值。

9. 发明授权

US09006002B2 Polycrystalline silicon rod and method for manufacturing polycrystalline silicon rod 有权
标题翻译：多晶硅棒及多晶硅棒的制造方法
公开(公告)号：US09006002B2
公开(公告)日：2015-04-14
申请号：US13808404
申请日：2011-07-04
申请人： Shigeyoshi Netsu , Fumitaka Kume , Junichi Okada
发明人： Shigeyoshi Netsu , Fumitaka Kume , Junichi Okada
IPC分类号： H01L21/00 , H01L21/66 , G01R31/26 , C01B33/035 , G01N29/04 , G01N29/44 , G01N29/46 , G01N29/12
CPC分类号： H01L22/12 , C01B33/035 , G01M7/08 , G01N29/045 , G01N29/12 , G01N29/4418 , G01N29/4454 , G01N29/46 , G01N2291/0234 , G01N2291/2626 , G01N2291/2697 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要： The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).
摘要翻译：用卷尺测量多晶硅棒（100）的长度，然后用锤子（120）击打多晶硅棒（100），并将该锤击声通过麦克风（140）记录在记录器（140）中 130）。然后，对锤击声的声信号进行快速傅里叶变换，并显示频率分布。此外，检测出在快速傅里叶变换之后获得的频率分布中的最大音量的峰值频率f。获得多晶硅棒的长度（L）与峰值频率f之间的关系，根据峰值频率f是否在f≥1.471的范围内来确定多晶硅棒的坚固度 / L（区域A）。

10. 发明申请

US20120201976A1 CORE WIRE HOLDER FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON 有权
标题翻译：用于生产聚硅氧烷的芯线夹和多晶硅生产方法
公开(公告)号：US20120201976A1
公开(公告)日：2012-08-09
申请号：US13502015
申请日：2010-07-27
申请人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume
发明人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume
IPC分类号： C23C16/24 , B25B11/00 , C23C16/44
CPC分类号： C01B33/035 , Y10T29/53796 , Y10T29/53961
摘要： One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
摘要翻译：芯线保持架20的一端形成为截头圆锥形，具有倾斜面。在端部设有开口部22，形成中空部21，插入中空部21并保持在其中的硅芯线5。在硅芯线5的表面上，通过西门子方法气相沉积多晶硅6以制造多晶硅棒。在开口部22附近的截锥体的倾斜面上，作为绝热层，从开口部的朝向中空部21的外周面形成环状狭缝23a〜23c。环状狭缝用作绝热部分，并且抑制热量逸出以加热芯线保持器20的一端侧。

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