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1. 发明申请

US20130102092A1 POLYCRYSTALLINE SILICON ROD AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON ROD 有权
标题翻译：多晶硅棒及其制造方法多晶硅
公开(公告)号：US20130102092A1
公开(公告)日：2013-04-25
申请号：US13808404
申请日：2011-07-04
申请人： Shigeyoshi Netsu , Fumitaka Kume , Junichi Okada
发明人： Shigeyoshi Netsu , Fumitaka Kume , Junichi Okada
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , C01B33/035 , G01M7/08 , G01N29/045 , G01N29/12 , G01N29/4418 , G01N29/4454 , G01N29/46 , G01N2291/0234 , G01N2291/2626 , G01N2291/2697 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要： The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).
摘要翻译：用卷尺测量多晶硅棒（100）的长度，然后用锤子（120）击打多晶硅棒（100），并将该锤击声通过麦克风（140）记录在记录器（140）中 130）。然后，对锤击声的声信号进行快速傅里叶变换，并显示频率分布。此外，检测出在快速傅里叶变换之后获得的频率分布中的最大音量的峰值频率f。获得多晶硅棒的长度（L）与峰值频率f之间的关系，并且基于峰值频率f是否在f> =的范围内来确定多晶硅棒的坚固度， 1,471 / L（A区）。

2. 发明授权

US09006002B2 Polycrystalline silicon rod and method for manufacturing polycrystalline silicon rod 有权
标题翻译：多晶硅棒及多晶硅棒的制造方法
公开(公告)号：US09006002B2
公开(公告)日：2015-04-14
申请号：US13808404
申请日：2011-07-04
申请人： Shigeyoshi Netsu , Fumitaka Kume , Junichi Okada
发明人： Shigeyoshi Netsu , Fumitaka Kume , Junichi Okada
IPC分类号： H01L21/00 , H01L21/66 , G01R31/26 , C01B33/035 , G01N29/04 , G01N29/44 , G01N29/46 , G01N29/12
CPC分类号： H01L22/12 , C01B33/035 , G01M7/08 , G01N29/045 , G01N29/12 , G01N29/4418 , G01N29/4454 , G01N29/46 , G01N2291/0234 , G01N2291/2626 , G01N2291/2697 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要： The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).
摘要翻译：用卷尺测量多晶硅棒（100）的长度，然后用锤子（120）击打多晶硅棒（100），并将该锤击声通过麦克风（140）记录在记录器（140）中 130）。然后，对锤击声的声信号进行快速傅里叶变换，并显示频率分布。此外，检测出在快速傅里叶变换之后获得的频率分布中的最大音量的峰值频率f。获得多晶硅棒的长度（L）与峰值频率f之间的关系，根据峰值频率f是否在f≥1.471的范围内来确定多晶硅棒的坚固度 / L（区域A）。

3. 发明申请

US20120175613A1 POLYCRYSTALLINE SILICON MASS AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON MASS 审中-公开
标题翻译：用于生产多晶硅质量的多晶硅质量和工艺
公开(公告)号：US20120175613A1
公开(公告)日：2012-07-12
申请号：US13496693
申请日：2010-07-21
申请人： Shigeyoshi Netsu , Junichi Okada , Fumitaka Kume
发明人： Shigeyoshi Netsu , Junichi Okada , Fumitaka Kume
IPC分类号： H01L29/04 , H01L21/205
CPC分类号： C01B33/035 , C01B33/037
摘要： The present invention provides a clean and high-purity polycrystalline silicon mass having a small content of chromium, iron, nickel, copper, and cobalt in total, which are heavy metal impurities that reduce the quality of single-crystal silicon. In the vicinity of an electrode side end of a polycrystalline silicon rod obtained by the Siemens method, the total of the chromium, iron, nickel, copper, and cobalt concentrations is high. Accordingly, before a crushing step of a polycrystalline silicon rod 100, a removing step of removing at least 70 mm of a polycrystalline silicon portion from the electrode side end of the polycrystalline silicon rod 100 extracted to the outside of a reactor is provided. Thereby, the polycrystalline silicon portion in which the total of the chromium, iron, nickel, copper, and cobalt concentrations in a bulk is not less than 150 ppta can be removed.
摘要翻译：本发明提供了一种清洁，高纯度的多晶硅质量体，它们总共含有少量的铬，铁，镍，铜和钴，这是降低单晶硅质量的重金属杂质。在通过西门子方法获得的多晶硅棒的电极侧端附近，铬，铁，镍，铜和钴的总量高。因此，在多晶硅棒100的破碎步骤之前，提供从提取到反应器外部的多晶硅棒100的电极侧端部去除至少70mm的多晶硅部分的去除步骤。因此，可以除去其中大体积中铬，铁，镍，铜和钴的总浓度不低于150ppta的多晶硅部分。

4. 发明授权

US08793853B2 Core wire holder for producing polycrystalline silicon and method for producing polycrystalline silicon 有权
标题翻译：用于生产多晶硅的芯线架和多晶硅生产方法
公开(公告)号：US08793853B2
公开(公告)日：2014-08-05
申请号：US13502015
申请日：2010-07-27
申请人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume
发明人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume
IPC分类号： B25B1/00
CPC分类号： C01B33/035 , Y10T29/53796 , Y10T29/53961
摘要： One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
摘要翻译：芯线保持架20的一端形成为截头圆锥形，具有倾斜面。在端部设有开口部22，形成中空部21，插入中空部21并保持在其中的硅芯线5。在硅芯线5的表面上，通过西门子方法气相沉积多晶硅6以制造多晶硅棒。在开口部22附近的截锥体的倾斜面上，作为绝热层，从开口部的朝向中空部21的外周面形成环状狭缝23a〜23c。环状狭缝用作绝热部分，并且抑制热量逸出以加热芯线保持器20的一端侧。

5. 发明申请

US20120237429A1 REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON 有权
标题翻译：用于制造多晶硅的反应器，用于生产多晶硅的系统和用于生产多晶硅的方法
公开(公告)号：US20120237429A1
公开(公告)日：2012-09-20
申请号：US13496002
申请日：2010-07-09
申请人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
发明人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
IPC分类号： B01J19/00 , C01B33/027
CPC分类号： C01B33/035 , C22C1/02 , Y02P20/124
摘要： An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
摘要翻译：反应器10的内壁11具有两层结构：在与腐蚀性工艺气体接触的反应器的内侧设置有包括具有高防锈性的合金材料的防腐蚀层11a和用于有效导电的导热层11b 在反应器10的外侧（外壁侧）设置有从内壁面到冷却剂流路13的反应器10内的热量。防腐层11a包括具有由R = [Cr] + [Ni] -1.5 [Si]定义的值R为40％以上的组成的合金材料，其中[Cr]为质量含量（％（Cr），[Ni]为镍（Ni）的质量含量（质量％），[Si]为硅（Si）的质量含量（质量％）。

6. 发明申请

US20120222619A1 CARBON ELECTRODE AND APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON ROD 有权
标题翻译：用于制造多晶硅线的碳电极和装置
公开(公告)号：US20120222619A1
公开(公告)日：2012-09-06
申请号：US13508826
申请日：2010-10-22
申请人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume , Masaru Hirahara
发明人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume , Masaru Hirahara
IPC分类号： C23C16/50
CPC分类号： C23C16/458 , C01B32/225 , C01B33/035 , C23C16/24
摘要： The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.
摘要翻译：上电极31具有从上表面33延伸到下表面34的孔35，将螺栓36从上电极31的上表面33插入孔35中，并通过螺钉固定在下电极32中。孔35的内部和螺栓36的直体部之间的间隙51允许上电极31在放置表面（在下电极32的下表面34的上表面）的所有方向上滑动作为与下部电极32的上表面的接触面的图2中的上部电极31），由此提供防止U棒的发生龟裂或断裂的效果，U棒能够在各个方向上膨胀和收缩气相生长过程。

7. 发明申请

US20120207662A1 SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON 有权
标题翻译：用于生产多晶硅的系统，用于生产多晶硅的装置和用于生产多晶硅的方法
公开(公告)号：US20120207662A1
公开(公告)日：2012-08-16
申请号：US13496060
申请日：2010-07-20
申请人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
发明人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
IPC分类号： C01B33/027 , B01J19/00
CPC分类号： H01L21/02595 , B01J19/02 , B01J2219/0236 , C01B33/035 , C23C16/24 , C23C16/4411 , C23C16/463 , C23C16/52 , H01L21/02532 , H01L21/02636 , Y02P20/124 , Y02P20/129
摘要： The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.
摘要翻译：本发明提供了一种技术，通过该技术可以降低用于冷却反应器的冷却剂的热量，并且可以减少在反应器内沉积多晶硅时来自反应器的内壁的掺杂剂杂质的污染，以产生高纯度多晶硅。通过使用温度高于标准沸点的热水15作为供给到反应器10的冷却剂，反应器内壁的温度保持在不高于370℃的温度。另外，通过设置在冷却剂罐20中的压力控制部来减少要回收的热水15，以产生蒸汽。因此，一部分热水作为蒸汽被取出到外部，并且再次用作另一种应用的加热源。

8. 发明授权

US09193596B2 Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline silicon 有权
标题翻译：用于生产多晶硅的反应器，用于生产多晶硅的系统以及用于生产多晶硅的工艺
公开(公告)号：US09193596B2
公开(公告)日：2015-11-24
申请号：US13496002
申请日：2010-07-09
申请人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
发明人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
IPC分类号： C01B33/02 , B01J19/00 , C01B33/035 , C22C1/02
CPC分类号： C01B33/035 , C22C1/02 , Y02P20/124
摘要： An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
摘要翻译：反应器10的内壁11具有两层结构：在与腐蚀性工艺气体接触的反应器的内侧设置有包括具有高防锈性的合金材料的防腐蚀层11a和用于有效导电的导热层11b 在反应器10的外侧（外壁侧）设置有从内壁面到冷却剂流路13的反应器10内的热量。防腐层11a包括具有由R = [Cr] + [Ni] -1.5 [Si]定义的值R为40％以上的组成的合金材料，其中[Cr]为质量含量（％（Cr），[Ni]为镍（Ni）的质量含量（质量％），[Si]为硅（Si）的质量含量（质量％）。

9. 发明授权

US09017482B2 System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline silicon 有权
标题翻译：多晶硅制造系统，多晶硅制造装置及多晶硅制造方法
公开(公告)号：US09017482B2
公开(公告)日：2015-04-28
申请号：US13496060
申请日：2010-07-20
申请人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
发明人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
IPC分类号： C01B33/035 , B01J19/02 , C23C16/44 , C23C16/54 , C23C16/24 , C23C16/52
CPC分类号： H01L21/02595 , B01J19/02 , B01J2219/0236 , C01B33/035 , C23C16/24 , C23C16/4411 , C23C16/463 , C23C16/52 , H01L21/02532 , H01L21/02636 , Y02P20/124 , Y02P20/129
摘要： The present invention provides a technique by which heat can be efficiently recovered from a coolant used to cool a reactor, and contamination with dopant impurities from an inner wall of a reactor when polycrystalline silicon is deposited within the reactor can be reduced to produce high-purity polycrystalline silicon. With the use of hot water 15 having a temperature higher than a standard boiling point as a coolant fed to the reactor 10, the temperature of the reactor inner wall is kept at a temperature of not more than 370° C. Additionally, the pressure of the hot water 15 to be recovered is reduced by a pressure control section provided in a coolant tank 20 to generate steam. Thereby, a part of the hot water is taken out as steam to the outside, and reused as a heating source for another application.
摘要翻译：本发明提供了一种技术，通过该技术可以降低用于冷却反应器的冷却剂的热量，并且可以减少在反应器内沉积多晶硅时来自反应器的内壁的掺杂剂杂质的污染，以产生高纯度多晶硅。通过使用温度高于标准沸点的热水15作为供给到反应器10的冷却剂，反应器内壁的温度保持在不高于370℃的温度。另外，通过设置在冷却剂罐20中的压力控制部来减少要回收的热水15，以产生蒸汽。因此，一部分热水作为蒸汽被取出到外部，并且再次用作另一种应用的加热源。

10. 发明授权

US09562289B2 Carbon electrode with slidable contact surfaces and apparatus for manufacturing polycrystalline silicon rod 有权
标题翻译：具有可滑动接触表面的碳电极和用于制造多晶硅棒的设备
公开(公告)号：US09562289B2
公开(公告)日：2017-02-07
申请号：US13508826
申请日：2010-10-22
申请人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume , Masaru Hirahara
发明人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume , Masaru Hirahara
IPC分类号： C30B28/12 , C23C16/458 , C01B33/035 , C23C16/24 , C01B31/04
CPC分类号： C23C16/458 , C01B32/225 , C01B33/035 , C23C16/24
摘要： The upper electrode 31 has a hole 35 extending from an upper surface 33 to a lower surface 34, a bolt 36 is inserted from the upper surface 33 of the upper electrode 31 into the hole 35, and secured in a lower electrode 32 by a screw. A gap 51 between an inside of the hole 35 and a straight body portion of the bolt 36 allows the upper electrode 31 to slide in all directions in a placement surface (upper surface of the lower electrode 32 in contact with the lower surface 34 of the upper electrode 31 in FIG. 2) that is a contact surface with an upper surface of the lower electrode 32, thereby providing an effect of preventing occurrence of a crack or a break in a U rod that can be expanded and contracted in all directions during a vapor phase growth process.
摘要翻译：上电极31具有从上表面33延伸到下表面34的孔35，将螺栓36从上电极31的上表面33插入孔35中，并通过螺钉固定在下电极32中。孔35的内部和螺栓36的直体部之间的间隙51允许上电极31在放置表面（在下电极32的下表面34的上表面）的所有方向上滑动作为与下部电极32的上表面的接触面的图2中的上部电极31），由此提供防止U棒的发生龟裂或断裂的效果，U棒能够在各个方向上膨胀和收缩气相生长过程。

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