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1. 发明授权

US08328935B2 Method of manufacturing polycrystalline silicon rod 有权
标题翻译：多晶硅棒的制造方法
公开(公告)号：US08328935B2
公开(公告)日：2012-12-11
申请号：US12418165
申请日：2009-04-03
申请人： Michihiro Mizuno , Shinichi Kurotani , Shigeyoshi Netsu , Kyoji Oguro
发明人： Michihiro Mizuno , Shinichi Kurotani , Shigeyoshi Netsu , Kyoji Oguro
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C01B33/03 , C01B33/035
摘要： The present invention is a method of manufacturing polycrystalline silicon rods, wherein silicon is deposited onto a silicon core wire by a chemical vapor deposition (CVD) method such that a silicon member, which is cut out from a single-crystalline silicon ingot at an off-angle range of 5 to 40 degrees relative to a crystal habit line of the ingot, is used as the silicon core wire. The single-crystalline silicon ingot is preferably grown by a Czochralski (CZ) method or floating zone (FZ) method, such that the ingot preferably has an interstitial oxygen concentration of 7 ppma to 20 ppma. Silicon rods produced by this method are less likely to suffer a breakage caused by cleavage during the growth process of polycrystalline silicon during CVD, and exhibit improved FZ method success rates. The polycrystalline silicon rods produced by this method also have low impurity contamination and high single-crystallization efficiency.
摘要翻译：本发明是一种制造多晶硅棒的方法，其中通过化学气相沉积（CVD）方法将硅沉积到硅芯线上，使得从断开的单晶硅锭切出的硅构件使用相对于锭的晶体习性线5〜40度的角度范围，作为硅芯线。单晶硅锭优选通过切克劳斯基（CZ）法或浮动区（FZ）法生长，使得锭优选具有7ppma至20ppma的间隙氧浓度。通过该方法制造的硅棒在CVD期间不太可能在多晶硅生长过程中由于断裂引起的断裂，并且显示出改进的FZ方法成功率。通过该方法制造的多晶硅棒也具有低杂质污染和高单结晶效率。

2. 发明申请

US20090057840A1 WAFER MANUFACTURING METHOD, POLISHING APPARATUS, AND WAFER 审中-公开
标题翻译： WAFER制造方法，抛光设备和WAFER
公开(公告)号：US20090057840A1
公开(公告)日：2009-03-05
申请号：US12263867
申请日：2008-11-03
申请人： Shigeyoshi Netsu , Hisashi Masumura
发明人： Shigeyoshi Netsu , Hisashi Masumura
IPC分类号： H01L23/00
CPC分类号： H01L21/02024 , B24B37/345
摘要： The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof that is strongly required recently, and a wafer. In a polishing process for making a mirror surface of the wafer, a back surface of the wafer is polished to produce a reference plane thereof.
摘要翻译：本发明提供一种晶片制造方法和晶片抛光装置，其能够控制晶片周边的下垂和最近需要强烈要求的纳米拓扑学值的改善以及晶片。在用于制造晶片的镜面的抛光工艺中，抛光晶片的后表面以产生其参考平面。

3. 发明申请

US20050085017A1 Semiconductor wafer manufacturing method, semiconductor wafer mnaufacturing order acceptance method, and semiconductor wafer manufacturing order acceptance system 失效
标题翻译：半导体晶圆制造方法，半导体晶圆制造订单验收方法以及半导体晶圆制造订单验收系统
公开(公告)号：US20050085017A1
公开(公告)日：2005-04-21
申请号：US10502389
申请日：2003-01-22
申请人： Tatsuo Ito , Shigeyoshi Netsu , Masashi Ichikawa , Nobuhiro Ohara
发明人： Tatsuo Ito , Shigeyoshi Netsu , Masashi Ichikawa , Nobuhiro Ohara
IPC分类号： G05B19/418 , G06Q10/00 , G06Q50/00 , G06Q50/04 , H01L21/02 , H01L21/48
CPC分类号： G06Q10/06 , G05B19/418 , G05B2219/32024 , G06Q10/087 , Y02P90/02 , Y02P90/18
摘要： The present invention provides a method for manufacturing a semiconductor wafer comprising steps of obtaining information of a device manufacturing process, selecting a wafer manufacturing process corresponding thereto, and manufacturing a semiconductor wafer according to the selected wafer manufacturing process. The present invention also provides a method for receiving an order for manufacture of a semiconductor wafer comprising a step of connecting a device maker with a customer computer in a wafer maker, a step wherein the customer computer receives information of a device manufacturing process and a step of selecting a wafer manufacturing process corresponding thereto, and provides a system for receiving an order for manufacture of a semiconductor wafer comprising a client terminal in a device maker and a customer computer in a wafer maker wherein information of a device manufacturing process is inputted into the client terminal and is sent, the customer computer receives the information of the device manufacturing process, and a wafer manufacturing process corresponding thereto is selected. Thereby, there can be provided a method for manufacturing a semiconductor wafer, a method for receiving an order for manufacture of a semiconductor wafer, and a system for receiving an order wherein a wafer suitable for a device manufacturing process in a device maker is supplied.
摘要翻译：本发明提供一种制造半导体晶片的方法，包括以下步骤：根据所选择的晶片制造工艺获得器件制造工艺的信息，选择与之对应的晶片制造工艺，以及制造半导体晶片。本发明还提供了一种用于接收制造半导体晶片的顺序的方法，包括在晶片制造机中将设备制造商与客户计算机连接的步骤，其中客户计算机接收设备制造过程的信息和步骤选择与之对应的晶片制造工艺，并且提供一种用于接收制造半导体晶圆的系统的系统，该半导体晶片包括在晶片制造商中的设备制造商和客户计算机中的客户终端，其中将器件制造过程的信息输入到客户终端被发送，客户计算机接收设备制造过程的信息，并且选择与其对应的晶片制造过程。因此，可以提供一种用于制造半导体晶片的方法，用于接收半导体晶片的制造顺序的方法，以及用于接收其中提供适合于器件制造商中的器件制造工艺的晶片的顺序的系统。

4. 发明授权

US5725753A Apparatus and method for cleaning semiconductor wafers 失效
标题翻译：用于清洁半导体晶片的装置和方法
公开(公告)号：US5725753A
公开(公告)日：1998-03-10
申请号：US638233
申请日：1996-04-26
申请人： Yasuyuki Harada , Shigeyoshi Netsu
发明人： Yasuyuki Harada , Shigeyoshi Netsu
IPC分类号： B08B3/10 , C02F1/36 , C02F1/461 , H01L21/00 , H01L21/304 , H01L21/306
CPC分类号： H01L21/02052 , B08B3/10 , C02F1/4618 , H01L21/67057 , C02F1/36 , C02F2001/4619 , C02F2201/4611 , C02F2201/46115 , C02F2201/46195
摘要： An improvement is proposed in the cleaning treatment of semiconductor silicon wafers in which the conventional step of cleaning with an aqueous solution of an alkali is replaced with a cleaning treatment with a temporarily alkaline pure water which is produced electrolytically by the application of a DC voltage between a cathode and an anode bonded to the surfaces of a hydrogen-ion exchange membrane so that the alkaline cleaning treatment can be performed under mild conditions so as to eliminate the troubles due to formation of COPs unavoidable in the conventional process. In addition, the pure water rinse following the alkali cleaning of the wafers before transfer to the succeeding acidic cleaning step can be omitted to greatly contribute to the improvement of productivity. The apparatus used therefor comprises a rectangular vessel divided into a central cathode compartment, in which the wafers are held in a vertical disposition within an up-flow of pure water, and a pair of anode compartments by partitioning with a pair of hydrogen-ion exchange membranes, on both sides of which a cathode plate and anode plate are bonded.
摘要翻译：在半导体硅晶片的清洗处理中提出了一种改进，其中用碱性水溶液进行清洁的常规步骤被用临时碱性纯水清洗处理代替，所述临时碱性纯水通过在结合到氢离子交换膜的表面的阴极和阳极，使得碱性清洁处理可以在温和条件下进行，以消除由于形成常规方法中不可避免的COP的麻烦。此外，在转移到后续的酸性清洁步骤之前，在晶片的碱清洗之后的纯水冲洗可以被省略，以极大地有助于提高生产率。所使用的装置包括分成中央阴极室的矩形容器，其中晶片在纯水的上升流中保持垂直布置，并且一对阳极室通过用一对氢离子交换膜，其两侧粘合阴极板和阳极板。

5. 发明授权

US09605356B2 Method for selecting polycrystalline silicon rod, and method for producing single crystalline silicon 有权
公开(公告)号：US09605356B2
公开(公告)日：2017-03-28
申请号：US14111597
申请日：2012-04-04
申请人： Shuichi Miyao , Junichi Okada , Shigeyoshi Netsu
发明人： Shuichi Miyao , Junichi Okada , Shigeyoshi Netsu
IPC分类号： C30B13/00 , C30B29/06 , C01B33/035 , C30B35/00 , C30B15/00 , G01N23/207
CPC分类号： C30B13/00 , C01B33/035 , C30B15/00 , C30B29/06 , C30B35/007 , G01N23/207
摘要： Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices , , and , the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon.

6. 发明授权

US08793853B2 Core wire holder for producing polycrystalline silicon and method for producing polycrystalline silicon 有权
标题翻译：用于生产多晶硅的芯线架和多晶硅生产方法
公开(公告)号：US08793853B2
公开(公告)日：2014-08-05
申请号：US13502015
申请日：2010-07-27
申请人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume
发明人： Shigeyoshi Netsu , Shinichi Kurotani , Kyoji Oguro , Fumitaka Kume
IPC分类号： B25B1/00
CPC分类号： C01B33/035 , Y10T29/53796 , Y10T29/53961
摘要： One end side of a core wire holder 20 is formed into a shape of a truncated cone and has an inclined surface. In the end portion, an opening 22 is provided, and a hollow portion 21 is formed, a silicon core wire 5 being inserted into the hollow portion 21 and held therein. On the surface of the silicon core wire 5, polycrystalline silicon 6 is vapor deposited by the Siemens method to produce a polycrystalline silicon rod. On the inclined surface of the truncated cone portion in the vicinity of the opening 22, as a thermal insulating layer, annular slits 23a to 23c are formed from an outer circumferential surface in the vicinity of the opening toward the hollow portion 21. The annular slit acts as a thermal insulating portion, and suppresses escape of the heat to heat the one end side of the core wire holder 20.
摘要翻译：芯线保持架20的一端形成为截头圆锥形，具有倾斜面。在端部设有开口部22，形成中空部21，插入中空部21并保持在其中的硅芯线5。在硅芯线5的表面上，通过西门子方法气相沉积多晶硅6以制造多晶硅棒。在开口部22附近的截锥体的倾斜面上，作为绝热层，从开口部的朝向中空部21的外周面形成环状狭缝23a〜23c。环状狭缝用作绝热部分，并且抑制热量逸出以加热芯线保持器20的一端侧。

7. 发明申请

US20130102092A1 POLYCRYSTALLINE SILICON ROD AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON ROD 有权
标题翻译：多晶硅棒及其制造方法多晶硅
公开(公告)号：US20130102092A1
公开(公告)日：2013-04-25
申请号：US13808404
申请日：2011-07-04
申请人： Shigeyoshi Netsu , Fumitaka Kume , Junichi Okada
发明人： Shigeyoshi Netsu , Fumitaka Kume , Junichi Okada
IPC分类号： H01L21/66
CPC分类号： H01L22/12 , C01B33/035 , G01M7/08 , G01N29/045 , G01N29/12 , G01N29/4418 , G01N29/4454 , G01N29/46 , G01N2291/0234 , G01N2291/2626 , G01N2291/2697 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要： The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).
摘要翻译：用卷尺测量多晶硅棒（100）的长度，然后用锤子（120）击打多晶硅棒（100），并将该锤击声通过麦克风（140）记录在记录器（140）中 130）。然后，对锤击声的声信号进行快速傅里叶变换，并显示频率分布。此外，检测出在快速傅里叶变换之后获得的频率分布中的最大音量的峰值频率f。获得多晶硅棒的长度（L）与峰值频率f之间的关系，并且基于峰值频率f是否在f> =的范围内来确定多晶硅棒的坚固度， 1,471 / L（A区）。

8. 发明申请

US20120237429A1 REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON, SYSTEM FOR PRODUCING POLYCRYSTALLINE SILICON, AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON 有权
标题翻译：用于制造多晶硅的反应器，用于生产多晶硅的系统和用于生产多晶硅的方法
公开(公告)号：US20120237429A1
公开(公告)日：2012-09-20
申请号：US13496002
申请日：2010-07-09
申请人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
发明人： Shigeyoshi Netsu , Kyoji Oguro , Takaaki Shimizu , Yasushi Kurosawa , Fumitaka Kume
IPC分类号： B01J19/00 , C01B33/027
CPC分类号： C01B33/035 , C22C1/02 , Y02P20/124
摘要： An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
摘要翻译：反应器10的内壁11具有两层结构：在与腐蚀性工艺气体接触的反应器的内侧设置有包括具有高防锈性的合金材料的防腐蚀层11a和用于有效导电的导热层11b 在反应器10的外侧（外壁侧）设置有从内壁面到冷却剂流路13的反应器10内的热量。防腐层11a包括具有由R = [Cr] + [Ni] -1.5 [Si]定义的值R为40％以上的组成的合金材料，其中[Cr]为质量含量（％（Cr），[Ni]为镍（Ni）的质量含量（质量％），[Si]为硅（Si）的质量含量（质量％）。

9. 发明授权

US07203559B2 Method for manufacturing semiconductor wafer, method for receiving order for manufacture of semiconductor wafer, and system for receiving order for manufacture of semiconductor wafer 失效
标题翻译：半导体晶片的制造方法，接收半导体晶片的制造顺序的方法以及接收半导体晶片的制造顺序的系统
公开(公告)号：US07203559B2
公开(公告)日：2007-04-10
申请号：US10502389
申请日：2003-01-22
申请人： Tatsuo Ito , Shigeyoshi Netsu , Masashi Ichikawa , Nobuhiro Ohara
发明人： Tatsuo Ito , Shigeyoshi Netsu , Masashi Ichikawa , Nobuhiro Ohara
IPC分类号： G06F19/00
CPC分类号： G06Q10/06 , G05B19/418 , G05B2219/32024 , G06Q10/087 , Y02P90/02 , Y02P90/18
摘要： The present invention provides a method for manufacturing a semiconductor wafer comprising steps of obtaining information of a device manufacturing process, selecting a wafer manufacturing process corresponding thereto, and manufacturing a semiconductor wafer according to the selected wafer manufacturing process. The present invention also provides a method for receiving an order for manufacture of a semiconductor wafer comprising a step of connecting a device maker with a customer computer in a wafer maker, a step wherein the customer computer receives information of a device manufacturing process and a step of selecting a wafer manufacturing process corresponding thereto, and provides a system for receiving an order for manufacture of a semiconductor wafer comprising a client terminal in a device maker and a customer computer in a wafer maker wherein information of a device manufacturing process is inputted into the client terminal and is sent, the customer computer receives the information of the device manufacturing process, and a wafer manufacturing process corresponding thereto is selected. Thereby, there can be provided a method for manufacturing a semiconductor wafer, a method for receiving an order for manufacture of a semiconductor wafer, and a system for receiving an order wherein a wafer suitable for a device manufacturing process in a device maker is supplied.
摘要翻译：本发明提供一种制造半导体晶片的方法，包括以下步骤：根据所选择的晶片制造工艺获得器件制造工艺的信息，选择与之对应的晶片制造工艺，以及制造半导体晶片。本发明还提供了一种用于接收制造半导体晶片的顺序的方法，包括在晶片制造机中将设备制造商与客户计算机连接的步骤，其中客户计算机接收设备制造过程的信息和步骤选择与之对应的晶片制造工艺，并且提供一种用于接收制造半导体晶圆的系统的系统，该半导体晶片包括在晶片制造商中的设备制造商和客户计算机中的客户终端，其中将器件制造过程的信息输入到客户终端被发送，客户计算机接收设备制造过程的信息，并且选择与其对应的晶片制造过程。因此，可以提供一种用于制造半导体晶片的方法，用于接收半导体晶片的制造顺序的方法，以及用于接收其中提供适合于器件制造商中的器件制造工艺的晶片的顺序的系统。

10. 发明授权

US5409770A Elastic foamed sheet and wafer-polishing jig using the sheet 失效
标题翻译：弹性发泡片和使用该片的晶片抛光夹具
公开(公告)号：US5409770A
公开(公告)日：1995-04-25
申请号：US35608
申请日：1993-03-23
申请人： Shigeyoshi Netsu , Kihachiro Watanabe , Makoto Tsukada
发明人： Shigeyoshi Netsu , Kihachiro Watanabe , Makoto Tsukada
IPC分类号： B24B37/04 , B24B37/30 , H01L21/304 , H01L21/00
CPC分类号： B24B37/30 , Y10T428/249961 , Y10T428/249975 , Y10T428/249979
摘要： An elastic foamed sheet is disclosed which is usable as waxless polishing backing pads for wafers and capable of producing mirror polish wafers excelling in flatness.This elastic foamed sheet possesses at least a foamed layer 2 and is characterized by the fact that a plurality of bubbles 4 in the foamed layer 2 meet the following conditions:(1) that the bubbles are slender discrete bubbles erected parallelly to one another and dispersed at a substantially equal pitch in the direction of width of the foamed layer 2 and the bubbles 4 are substantially equal in size, shape, and position of formation in the direction of thickness of the foamed layer 2,(2) that center lines of the bubbles 4 in the direction of length thereof are parallel to the direction of thickness of the foamed layer 2, and(3) that the diameters of the bubbles 4 are minimized in the terminal part of the foamed layer 2 on one surface side thereof and gradually increased in the direction from the one surface side to the other surface side of foamed layer 2 until the bubbles form openings 6 thereof in the surface of the foamed layer 2.
摘要翻译：公开了一种弹性发泡片，其可用作晶片的无蜡抛光衬垫，并且能够生产出优异的平面度的镜面抛光晶片。该弹性发泡片材至少具有发泡层2，其特征在于，泡沫层2中的多个气泡4满足以下条件：（1）气泡是彼此平行并分散的细长的离散气泡在发泡层2的宽度方向上基本相等的间距和气泡4在发泡层2的厚度方向上的尺寸，形状和形成位置基本相等，（2）中心线在其长度方向上的气泡4与发泡层2的厚度方向平行，（3）在发泡层2的一个表面侧的末端部分中气泡4的直径最小化，在发泡层2的一个表面侧到另一个表面侧的方向上增加，直到泡沫在发泡层2的表面中形成开口6。

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