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1. 发明授权

US08877609B2 Method for manufacturing bonded substrate having an insulator layer in part of bonded substrate 有权
标题翻译：用于制造在键合衬底的一部分中具有绝缘体层的键合衬底的方法
公开(公告)号：US08877609B2
公开(公告)日：2014-11-04
申请号：US14007584
申请日：2012-04-10
申请人： Tsuyoshi Ohtsuki , Wei Feng Qu , Fumio Tahara , Yuuki Ooi , Kyoko Mitani
发明人： Tsuyoshi Ohtsuki , Wei Feng Qu , Fumio Tahara , Yuuki Ooi , Kiyoshi Mitani
IPC分类号： H01L21/762 , H01L21/84 , H01L27/12
CPC分类号： H01L21/76251 , H01L21/76256 , H01L21/84 , H01L27/1207
摘要： A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.
摘要翻译：一种在键合衬底的一部分中具有绝缘体层的接合衬底的制造方法包括：在基底衬底的接合表面上部分地形成多孔层或形成其厚度部分变化的多孔层; 对其上形成有多孔层的基底基板进行热处理以将多孔层改变成绝缘体层，从而在基底基板的接合表面上形成厚度部分变化的绝缘体层; 通过蚀刻去除其厚度变化相应于小厚度部分的厚度的量的绝缘体层; 将未蚀刻剩余绝缘体层的基底基板的接合表面接合到接合基板; 并且减小键合的键合衬底的厚度，从而形成薄膜层。

2. 发明申请

US20140120695A1 METHOD FOR MANUFACTURING BONDED SUBSTRATE HAVING AN INSULATOR LAYER IN PART OF BONDED SUBSTRATE 有权
标题翻译：在粘结基板的一部分制造具有绝缘层的粘合基板的方法
公开(公告)号：US20140120695A1
公开(公告)日：2014-05-01
申请号：US14007584
申请日：2012-04-10
申请人： Yuuki Ooi , Wei Feng Qu , Tsuyoshi Ohtsuki , Kyoko Mitani , Fumio Tahara
发明人： Tsuyoshi Ohtsuki , Wei Feng Qu , Fumio Tahara , Yuuki Ooi , Kiyoshi Mitani
IPC分类号： H01L21/762
CPC分类号： H01L21/76251 , H01L21/76256 , H01L21/84 , H01L27/1207
摘要： A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.
摘要翻译：一种在键合衬底的一部分中具有绝缘体层的接合衬底的制造方法包括：在基底衬底的接合表面上部分地形成多孔层或形成其厚度部分变化的多孔层; 对其上形成有多孔层的基底基板进行热处理以将多孔层改变成绝缘体层，从而在基底基板的接合表面上形成厚度部分变化的绝缘体层; 通过蚀刻去除其厚度变化相应于小厚度部分的厚度的量的绝缘体层; 将未蚀刻剩余绝缘体层的基底基板的接合表面接合到接合基板; 并且减小键合的键合衬底的厚度，从而形成薄膜层。

3. 发明申请

US20140119399A1 METHOD FOR DETECTING CRYSTAL DEFECTS 有权
标题翻译：检测晶体缺陷的方法
公开(公告)号：US20140119399A1
公开(公告)日：2014-05-01
申请号：US14124827
申请日：2012-06-18
申请人： Wei Feng Qu , Fumio Tahara , Yuuki Ooi
发明人： Wei Feng Qu , Fumio Tahara , Yuuki Ooi
IPC分类号： G01N1/28
CPC分类号： G01N1/28 , H01L22/12 , H01L22/24
摘要： A method for detecting a crystal defect in a silicon single crystal wafer doped with nitrogen, the silicon single crystal wafer whose initial oxygen concentration is 8 ppma (JEIDA) or lower. The method further includes the steps of: making a crystal defect of defect size of 25 nm or smaller apparent and detectable by implanting oxygen into the crystal defect by performing heat treatment on the silicon single crystal wafer in an oxygen atmosphere; and detecting the crystal defect of the silicon single crystal wafer after the heat treatment temperature is set such that, when the ratio between the oxygen solid solubility and the initial oxygen concentration of the silicon single crystal wafer heat treatment is set at α=the oxygen solid solubility/the initial oxygen concentration, α falls within a range from 1 to 3.
摘要翻译：一种用于检测掺杂有氮的硅单晶晶片中的晶体缺陷的方法，其初始氧浓度为8ppma（JEIDA）或更低的硅单晶晶片。该方法还包括以下步骤：通过在氧气氛中对硅单晶晶片进行热处理，使缺陷尺寸为25nm或更小的晶体缺陷明显并且可通过将氧注入晶体缺陷来检测; 并且在热处理温度被设定为使得当硅固溶度和硅单晶晶片热处理的初始氧浓度之比设定为α=氧固体时，检测硅单晶晶片的晶体缺陷溶解度/初始氧浓度α在1〜3的范围内。

4. 发明申请

US20080038526A1 Silicon Epitaxial Wafer And Manufacturing Method Thereof 审中-公开
标题翻译：硅外延晶圆及其制造方法
公开(公告)号：US20080038526A1
公开(公告)日：2008-02-14
申请号：US11632719
申请日：2005-07-05
申请人： Fumitaka Kume , Tomosuke Yushida , Ken Aihara , Ryoji Hoshi , Satoshi Tobe , Naohisa Toda , Fumio Tahara
发明人： Fumitaka Kume , Tomosuke Yushida , Ken Aihara , Ryoji Hoshi , Satoshi Tobe , Naohisa Toda , Fumio Tahara
IPC分类号： B32B7/02 , C30B15/00
CPC分类号： H01L21/3225 , C30B25/20 , C30B29/06 , C30B33/02 , Y10T428/24992
摘要： A silicon epitaxial wafer 100 formed by growing a silicon epitaxial layer 2 on a silicon single crystal substrate 1, produced by a CZ method, and doped with boron so that a resistivity thereof is in the range of 0.009 Ω·cm or higher and 0.012 Ω·cm or lower. The silicon single crystal substrate 1 has a density of the oxygen precipitation nuclei of 1×1010 cm−3 or higher. A width of a no-oxygen-precipitation-nucleus-forming-region 15, formed between the silicon epitaxial layer 2 and the silicon single substrate 1, is in the range of more than 0 μm and less than 10 μm. Thereby, provided is a silicon epitaxial wafer using a boron doped p+ CZ substrate, wherein a formed width of no-oxygen-precipitation-nucleus-forming-region is reduced sufficiently, and oxygen precipitates can be formed having a density sufficient enough to exert an IG effect.
摘要翻译：通过在硅单晶衬底1上生长硅外延层2而形成的硅外延晶片100，其通过CZ方法制造并掺杂硼，使其电阻率在0.009Ω.cm以上且0.012Ω .cm或更低。硅单晶衬底1的氧沉淀核的密度为1×10 10 -3 -3以上。在硅外延层2和硅单基板1之间形成的无氧析出核形成区域15的宽度在大于0μm且小于10μm的范围内。由此，提供了使用硼掺杂的P + CZ衬底的硅外延晶片，其中形成的无氧沉淀 - 核形成区域的宽度被充分降低，并且可以形成氧沉淀具有足以施加IG效应的密度。

5. 发明授权

US08916953B2 Method for manufacturing silicon single crystal wafer and annealed wafer 有权
标题翻译：硅单晶晶片和退火晶片的制造方法
公开(公告)号：US08916953B2
公开(公告)日：2014-12-23
申请号：US13993810
申请日：2012-01-06
申请人： Wei Feng Qu , Fumio Tahara , Yuuki Ooi , Shu Sugisawa
发明人： Wei Feng Qu , Fumio Tahara , Yuuki Ooi , Shu Sugisawa
IPC分类号： H01L29/32 , C30B33/02 , C30B29/06
CPC分类号： C30B33/02 , C30B29/06 , H01L29/32
摘要： The present invention provides a method for manufacturing a silicon single crystal wafer, in which a heat treatment is performed with respect to a silicon single crystal wafer having oxygen concentration of less than 7 ppma and nitrogen concentration of 1×1013 to 1×1014 atoms/cm3, which is obtained from a V-region silicon single crystal ingot grown by the Czochralski method, in a non-nitriding atmosphere at 1150 to 1300° C. for 1 to 120 minutes. As a result, a method for manufacturing a low-cost silicon single crystal wafer which is applicable to an IGBT by using a V-region wafer that is manufactured by the CZ method which can cope with an increase in diameter, by making a bulk have no defects and by providing a radial resistivity distribution, which is substantially equal to that when the neutron irradiation is effected, without performing the neutron irradiation is provided.
摘要翻译：本发明提供了一种制造硅单晶晶片的方法，其中对于氧浓度小于7ppma，氮浓度为1×1013至1×1014原子/厘米2的硅单晶晶片进行热处理， cm3，其是通过Czochralski法生长的V型硅单晶锭，在非氮化气氛中在1150〜1300℃下反应1〜120分钟。结果，制造低成本硅单晶晶片的方法可以通过使用通过CZ方法制造的V区晶片适用于IGBT，该V型晶片可以通过制造大量具有直径增加的方式没有缺陷并且通过提供径向电阻率分布，其基本上等于实施中子辐射时的径向电阻率分布，而不执行中子照射。

6. 发明授权

US08900971B2 Bonded substrate and manufacturing method thereof 有权
标题翻译：粘结基板及其制造方法
公开(公告)号：US08900971B2
公开(公告)日：2014-12-02
申请号：US13978840
申请日：2012-01-06
申请人： Tsuyoshi Ohtsuki , Wei Feng Qu , Fumio Tahara , Yuuki Ooi , Kyoko Mitani
发明人： Tsuyoshi Ohtsuki , Wei Feng Qu , Fumio Tahara , Yuuki Ooi , Kiyoshi Mitani
IPC分类号： H01L21/30 , H01L23/00 , H01L21/762 , H01L21/84
CPC分类号： H01L24/83 , H01L21/76254 , H01L21/76256 , H01L21/84 , H01L24/26 , H01L2224/83 , H01L2924/1461 , H01L2924/15788 , H01L2924/00
摘要： The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method.
摘要翻译：本发明提供了一种通过绝缘膜将基底与基片接合而制造键合衬底的方法，包括：多孔层形成步骤，部分地形成多孔层或形成厚度在接合表面上部分变化的多孔层的基底; 绝缘膜形成步骤，将多孔层改变为绝缘膜，从而形成厚度在基底基板的接合表面上部分变化的绝缘膜; 键合步骤，通过所述绝缘膜将所述基底衬底接合到所述接合衬底; 以及降低键合键合衬底的膜厚以形成薄膜层的膜厚减小步骤。结果，提供了一种能够通过简单的方法获得其厚度部分变化的绝缘膜的接合基板的制造方法。

7. 发明授权

US09606030B2 Method for detecting crystal defects 有权
公开(公告)号：US09606030B2
公开(公告)日：2017-03-28
申请号：US14124827
申请日：2012-06-18
申请人： Wei Feng Qu , Fumio Tahara , Yuuki Ooi
发明人： Wei Feng Qu , Fumio Tahara , Yuuki Ooi
IPC分类号： G01N25/72 , G01N1/28 , H01L21/66
CPC分类号： G01N1/28 , H01L22/12 , H01L22/24
摘要： A method for detecting a crystal defect in a silicon single crystal wafer doped with nitrogen, the silicon single crystal wafer whose initial oxygen concentration is 8 ppma (JEIDA) or lower. The method further includes the steps of: making a crystal defect of defect size of 25 nm or smaller apparent and detectable by implanting oxygen into the crystal defect by performing heat treatment on the silicon single crystal wafer in an oxygen atmosphere; and detecting the crystal defect of the silicon single crystal wafer after the heat treatment temperature is set such that, when the ratio between the oxygen solid solubility and the initial oxygen concentration of the silicon single crystal wafer heat treatment is set at α=the oxygen solid solubility/the initial oxygen concentration, α falls within a range from 1 to 3.

8. 发明授权

US07713851B2 Method of manufacturing silicon epitaxial wafer 有权
标题翻译：制造硅外延片的方法
公开(公告)号：US07713851B2
公开(公告)日：2010-05-11
申请号：US11660764
申请日：2005-08-03
申请人： Fumitaka Kume , Tomosuke Yoshida , Ken Aihara , Ryoji Hoshi , Satoshi Tobe , Naohisa Toda , Fumio Tahara
发明人： Fumitaka Kume , Tomosuke Yoshida , Ken Aihara , Ryoji Hoshi , Satoshi Tobe , Naohisa Toda , Fumio Tahara
IPC分类号： H01L21/20
CPC分类号： H01L21/02052 , H01L21/3225
摘要： A silicon epitaxial layer 2 is grown in vapor phase on a silicon single crystal substrate 1 manufactured by the Czochralski method, and doped with boron so as to adjust the resistivity to 0.02 Ω·cm or below, oxygen precipitation nuclei 11 are formed in the silicon single crystal substrate 1, by carrying out annealing at 450° C. to 750° C., in an oxidizing atmosphere, for a duration of time allowing formation of a silicon oxide film only to as thick as 2 nm or below on the silicon epitaxial layer 2 as a result of the annealing, and thus-formed silicon oxide film 3 is etched as the first cleaning after the low-temperature annealing, using a cleaning solution. By this process, the final residual thickness of the silicon oxide film can be suppressed only to a level equivalent to native oxide film, without relying upon the hydrofluoric acid cleaning.
摘要翻译：在由Czochralski法制造的硅单晶衬底1上以气相生长硅外延层2，并用硼掺杂以将电阻率调节至0.02＆OHgr·cm或更低，氧沉淀核11形成在硅单晶衬底1，通过在氧化气氛中在450℃至750℃进行退火，持续时间允许在硅上形成仅2nm或更小的氧化硅膜作为退火的结果的外延层2，使用清洗液，将低温退火后的第一次清洗作为第一清洗来蚀刻所形成的氧化硅膜3。通过该方法，氧化硅膜的最终剩余厚度可以仅被抑制到与天然氧化膜相当的水平，而不依赖于氢氟酸清洗。

9. 发明申请

US20070243699A1 Method of manufacturing silicon epitaxial wafer 有权
标题翻译：制造硅外延片的方法
公开(公告)号：US20070243699A1
公开(公告)日：2007-10-18
申请号：US11660764
申请日：2005-08-03
申请人： Fumitaka Kume , Tomosuke Yoshida , Ken Aihara , Ryoji Hoshi , Satoshi Tobe , Naohisa Toda , Fumio Tahara
发明人： Fumitaka Kume , Tomosuke Yoshida , Ken Aihara , Ryoji Hoshi , Satoshi Tobe , Naohisa Toda , Fumio Tahara
IPC分类号： H01L21/20
CPC分类号： H01L21/02052 , H01L21/3225
摘要： A silicon epitaxial layer 2 is grown in vapor phase on a silicon single crystal substrate 1 manufactured by the Czochralski method, and doped with boron so as to adjust the resistivity to 0.02 Ω·cm or below, oxygen precipitation nuclei 11 are formed in the silicon single crystal substrate 1, by carrying out annealing at 450° C. to 750° C., in an oxidizing atmosphere, for a duration of time allowing formation of a silicon oxide film only to as thick as 2 nm or below on the silicon epitaxial layer 2 as a result of the annealing, and thus-formed silicon oxide film 3 is etched as the first cleaning after the low-temperature annealing, using a cleaning solution. By this process, the final residual thickness of the silicon oxide film can be suppressed only to a level equivalent to native oxide film, without relying upon the hydrofluoric acid cleaning.
摘要翻译：在由Czochralski法制造的硅单晶衬底1上以气相生长硅外延层2，并掺杂硼以将电阻率调节至0.02Ω·cm以下，在硅中形成氧沉淀核11 单晶衬底1，通过在氧化气氛中在450℃至750℃下进行退火，持续时间允许在硅外延上形成仅2nm或更小的氧化硅膜层2作为退火的结果，并且使用清洁溶液，在低温退火之后，将由此形成的氧化硅膜3作为第一清洗进行蚀刻。通过该方法，氧化硅膜的最终剩余厚度可以仅被抑制到与天然氧化膜相当的水平，而不依赖于氢氟酸清洗。

10. 发明申请

US20130341763A1 BONDED SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：粘结基材及其制造方法
公开(公告)号：US20130341763A1
公开(公告)日：2013-12-26
申请号：US13978840
申请日：2012-01-06
申请人： Yuuki Ooi , Wei Feng Qu , Tsuyoshi Ohtsuki , Kyoko Mitani , Fumio Tahara
发明人： Tsuyoshi Ohtsuki , Wei Feng Qu , Fumio Tahara , Yuuki Ooi , Kiyoshi Mitani
IPC分类号： H01L23/00
CPC分类号： H01L24/83 , H01L21/76254 , H01L21/76256 , H01L21/84 , H01L24/26 , H01L2224/83 , H01L2924/1461 , H01L2924/15788 , H01L2924/00
摘要： The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method.
摘要翻译：本发明提供了一种通过绝缘膜将基底与基片接合而制造键合衬底的方法，包括：多孔层形成步骤，部分地形成多孔层或形成厚度在接合表面上部分变化的多孔层的基底; 绝缘膜形成步骤，将多孔层改变为绝缘膜，从而形成厚度在基底基板的接合表面上部分变化的绝缘膜; 键合步骤，通过所述绝缘膜将所述基底衬底接合到所述接合衬底; 以及降低键合键合衬底的膜厚以形成薄膜层的膜厚减小步骤。结果，提供了一种能够通过简单的方法获得其厚度部分变化的绝缘膜的接合基板的制造方法。

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