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1. 发明授权

US08871610B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US08871610B2
公开(公告)日：2014-10-28
申请号：US12568768
申请日：2009-09-29
申请人： Akihisa Shimomura , Masaki Koyama , Eiji Higa
发明人： Akihisa Shimomura , Masaki Koyama , Eiji Higa
IPC分类号： H01L21/30 , H01L21/762
CPC分类号： H01L21/76254
摘要： To increase adhesion between a single crystal semiconductor layer and a base substrate and to reduce bonding defects therebetween. To perform radical treatment on a surface of a semiconductor substrate to form a first insulating film on the semiconductor substrate; irradiate the semiconductor substrate with accelerated ions through the first insulating film to form an embrittlement region in the semiconductor substrate; form a second insulating film on the first insulating film; perform heat treatment after bonding a surface of the second insulating film and a surface of the base substrate to perform separation along the embrittlement region so that a semiconductor layer is formed over the base substrate with the first and second insulating films interposed therebetween; etch the semiconductor layer; and irradiate the semiconductor layer on which the etching is performed with a laser beam.
摘要翻译：为了增加单晶半导体层与基底基板之间的粘合力并减小它们之间的接合缺陷。在半导体衬底的表面进行自由基处理，以在半导体衬底上形成第一绝缘膜; 通过第一绝缘膜照射具有加速离子的半导体衬底，以在半导体衬底中形成脆化区域; 在第一绝缘膜上形成第二绝缘膜; 在接合第二绝缘膜的表面和基底表面之后进行热处理，以沿着脆化区域进行分离，使得在第一和第二绝缘膜之间形成在基底基板上的半导体层; 蚀刻半导体层; 并用激光束照射进行了蚀刻的半导体层。

2. 发明授权

US08313989B2 SOI substrate and method for manufacturing the same 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US08313989B2
公开(公告)日：2012-11-20
申请号：US12580532
申请日：2009-10-16
申请人： Hideto Ohnuma , Eiji Higa
发明人： Hideto Ohnuma , Eiji Higa
IPC分类号： H01L21/84 , H01L21/331 , H01L21/76 , H01L21/46
CPC分类号： H01L21/76254
摘要： To provide an SOI substrate having a high mechanical strength, and a method for manufacturing the SOI substrate, a single crystal semiconductor substrate is irradiated with accelerated ions so that an embrittled region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate; the single crystal semiconductor substrate is bonded to a base substrate with an insulating layer interposed therebetween; the single crystal semiconductor substrate is heated to be separated along the embrittled region, so that a semiconductor layer is provided over the base substrate with the insulating layer interposed therebetween; and a surface of the semiconductor layer is irradiated with a laser beam so that at least a superficial part of the semiconductor layer is melted, whereby at least one of nitrogen, oxygen, and carbon is solid-dissolved in the semiconductor layer.
摘要翻译：为了提供具有高机械强度的SOI衬底以及SOI衬底的制造方法，用加速离子照射单晶半导体衬底，使得在距离单个表面的表面预定深度的区域中形成脆化区域晶体半导体衬底; 将单晶半导体基板与绝缘层接合在基底基板上，单晶半导体衬底被加热以沿着脆化区域分离，从而在绝缘层之间设置在基底衬底上的半导体层; 并且用激光束照射半导体层的表面，使得至少半导体层的表面部分熔化，由此氮，氧和碳中的至少一个固体溶解在半导体层中。

3. 发明授权

US07994021B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07994021B2
公开(公告)日：2011-08-09
申请号：US11881285
申请日：2007-07-25
申请人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1288 , H01L29/66765
摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
摘要翻译：提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

4. 发明申请

US20100096720A1 SOI SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US20100096720A1
公开(公告)日：2010-04-22
申请号：US12580532
申请日：2009-10-16
申请人： Hideto OHNUMA , Eiji HIGA
发明人： Hideto OHNUMA , Eiji HIGA
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/76254
摘要： To provide an SOI substrate having a high mechanical strength, and a method for manufacturing the SOI substrate, a single crystal semiconductor substrate is irradiated with accelerated ions so that an embrittled region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate; the single crystal semiconductor substrate is bonded to a base substrate with an insulating layer interposed therebetween; the single crystal semiconductor substrate is heated to be separated along the embrittled region, so that a semiconductor layer is provided over the base substrate with the insulating layer interposed therebetween; and a surface of the semiconductor layer is irradiated with a laser beam so that at least a superficial part of the semiconductor layer is melted, whereby at least one of nitrogen, oxygen, and carbon is solid-dissolved in the semiconductor layer.
摘要翻译：为了提供具有高机械强度的SOI衬底以及SOI衬底的制造方法，用加速离子照射单晶半导体衬底，使得在距离单个表面的表面预定深度的区域中形成脆化区域晶体半导体衬底; 将单晶半导体基板与绝缘层接合在基底基板上，单晶半导体衬底被加热以沿着脆化区域分离，从而在绝缘层之间设置在基底衬底上的半导体层; 并且用激光束照射半导体层的表面，使得至少半导体层的表面部分熔化，由此氮，氧和碳中的至少一个固体溶解在半导体层中。

5. 发明授权

US08703579B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08703579B2
公开(公告)日：2014-04-22
申请号：US13186803
申请日：2011-07-20
申请人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
发明人： Hidekazu Miyairi , Hironobu Shoji , Akihisa Shimomura , Eiji Higa , Tomoaki Moriwaka , Shunpei Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L27/1266 , H01L27/1288 , H01L29/66765
摘要： A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask.
摘要翻译：提供一种形成半导体器件的方法，包括形成在第一衬底的一个面上吸收光的层的步骤，在吸收光的层上提供第二衬底的步骤，提供掩模以对抗的步骤第一基板的另一面，以及通过用激光束照射通过掩模吸收光的层，将吸收光的层的一部分转印到第二基板的步骤。

6. 发明授权

US08343847B2 Manufacturing method of SOI semiconductor device 有权
标题翻译： SOI半导体器件的制造方法
公开(公告)号：US08343847B2
公开(公告)日：2013-01-01
申请号：US12575555
申请日：2009-10-08
申请人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
发明人： Masaki Koyama , Junpei Momo , Eiji Higa , Hiroaki Honda , Tamae Moriwaka , Akihisa Shimomura
IPC分类号： H01L21/76
CPC分类号： H01L27/1266 , H01L21/02381 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/02686 , H01L21/76254 , H01L27/1214 , H01L27/1274 , H01L29/66772
摘要： To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one.
摘要翻译：为了防止在用激光束照射单晶半导体层的情况下，在激光照射时将杂质元素摄入单晶半导体层。在SOI衬底的制造方法中，制备单晶半导体衬底和基底衬底; 通过用加速的离子照射单晶半导体衬底，在单晶半导体衬底的表面的预定深度的区域中形成脆化区域; 单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合; 通过加热单晶半导体衬底以使脆化区域作为边界进行分离，在基底衬底上形成绝缘层，形成单晶半导体层; 去除形成在单晶半导体层上的氧化膜; 并且在除去氧化膜之后，通过用激光束照射单晶半导体层的表面，使单晶半导体层的至少一个表面熔融。单晶半导体层通过激光束的照射而熔化的次数是1。

7. 发明授权

US08216914B2 Method for manufacturing SOI substrate and method for manufacturing semiconductor device 有权
标题翻译：制造SOI衬底的方法和半导体器件的制造方法
公开(公告)号：US08216914B2
公开(公告)日：2012-07-10
申请号：US12872222
申请日：2010-08-31
申请人： Masaki Koyama , Kosei Nei , Toru Hasegawa , Junpei Momo , Eiji Higa
发明人： Masaki Koyama , Kosei Nei , Toru Hasegawa , Junpei Momo , Eiji Higa
IPC分类号： H01L21/46 , H01L21/30 , H01L21/84 , H01L21/00
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/268
摘要： An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.
摘要翻译：本发明的目的是提供一种制造包括具有高平坦度和高结晶度的半导体膜的SOI衬底的方法。在通过分离步骤在绝缘膜上形成单晶半导体膜之后，去除存在于半导体膜表面上的自然氧化膜，并在惰性气体气氛下用第一激光和第二激光照射半导体膜或减压气氛。发射到半导体膜中的任意点的第一激光的照射次数大于或等于7，优选大于或等于10并且小于或等于100.第二次的照射次数发射到半导体膜中的任意点的激光大于0且小于或等于2。

8. 发明申请

US20110076837A1 MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译： SOI衬底的制造方法和半导体器件的制造方法
公开(公告)号：US20110076837A1
公开(公告)日：2011-03-31
申请号：US12891271
申请日：2010-09-27
申请人： Hidekazu MIYAIRI , Akihisa SHIMOMURA , Tatsuya MIZOI , Eiji HIGA , Yoji NAGANO
发明人： Hidekazu MIYAIRI , Akihisa SHIMOMURA , Tatsuya MIZOI , Eiji HIGA , Yoji NAGANO
IPC分类号： H01L21/30
CPC分类号： H01L27/1203 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/78654 , H01L51/0027 , H01L2224/03552
摘要： A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate.
摘要翻译：证明具有耐热性低的基底衬底和具有高平坦度的非常薄的半导体层的SOI衬底的制造方法。该方法包括：将氢离子注入到半导体衬底中以形成离子注入层; 键合半导体衬底和诸如玻璃衬底的基底衬底，在其间放置结合层; 加热彼此接合的基板以将半导体基板与基底基板分离，在基底基板上留下薄的半导体层; 用激光照射薄半导体层的表面，以提高平坦度并恢复薄半导体层的结晶度; 并使薄半导体层变薄。该方法允许在基底衬底上形成厚度为100nm以下的单晶半导体层的SOI衬底。

9. 发明申请

US20110053384A1 METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造SOI衬底的方法和制造半导体器件的方法
公开(公告)号：US20110053384A1
公开(公告)日：2011-03-03
申请号：US12872222
申请日：2010-08-31
申请人： Masaki KOYAMA , Kosei NEI , Toru HASEGAWA , Junpei MOMO , Eiji HIGA
发明人： Masaki KOYAMA , Kosei NEI , Toru HASEGAWA , Junpei MOMO , Eiji HIGA
IPC分类号： H01L21/762
CPC分类号： H01L21/76254 , H01L21/02052 , H01L21/268
摘要： An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.
摘要翻译：本发明的目的是提供一种制造包括具有高平坦度和高结晶度的半导体膜的SOI衬底的方法。在通过分离步骤在绝缘膜上形成单晶半导体膜之后，去除存在于半导体膜表面上的自然氧化膜，并在惰性气体气氛下用第一激光和第二激光照射半导体膜或减压气氛。发射到半导体膜中的任意点的第一激光的照射次数大于或等于7，优选大于或等于10并且小于或等于100.第二次的照射次数发射到半导体膜中的任意点的激光大于0且小于或等于2。

10. 发明授权

US07897476B2 Method of manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07897476B2
公开(公告)日：2011-03-01
申请号：US12078411
申请日：2008-03-31
申请人： Shunpei Yamazaki , Eiji Higa , Yoji Nagano , Tatsuya Mizoi , Akihisa Shimomura
发明人： Shunpei Yamazaki , Eiji Higa , Yoji Nagano , Tatsuya Mizoi , Akihisa Shimomura
IPC分类号： H01L21/76
CPC分类号： H01L21/76254 , H01L21/2007 , H01L21/268 , H01L21/302 , H01L21/84
摘要： To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOI substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered.
摘要翻译：为了提供具有可实际使用的SOI层的SOI衬底，即使使用诸如玻璃衬底的耐受温度低的衬底的衬底，并且提供使用这种SOI衬底形成的半导体衬底。为了将单晶半导体衬底接合到诸如玻璃衬底的基底衬底，例如通过用有机硅烷作为源材料通过CVD形成的氧化硅膜被用作接合层。因此，即使使用具有小于等于700℃的容许温度限制的基板，例如玻璃基板，也可以形成具有强结合部的SOI基板。用激光束照射与单晶半导体衬底分离的半导体层，使得半导体层的表面平坦化并且其结晶度被回收。

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